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71. 发明专利

JP2010153832A Al alloy film for display device, thin film transistor substrate, manufacturing method therefor, and display device 审中-公开
标题翻译：用于显示器件的AL合金膜，薄膜晶体管衬底，其制造方法和显示器件
公开(公告)号：JP2010153832A
公开(公告)日：2010-07-08
申请号：JP2009264722
申请日：2009-11-20
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： OCHI MOTOTAKA , KAWAKAMI NOBUYUKI , GOTO YASUSHI
IPC分类号： H01L29/786 , G09F9/30 , H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L29/417
CPC分类号： C22C21/00 , G02F2001/13629 , H01L23/53219 , H01L27/124 , H01L27/1288 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an Al alloy film for display devices, which omits a barrier metal layer between the Al alloy film and a semiconductor layer of a TFT, and reduces the number of manufacturing steps of a TFT substrate. SOLUTION: The Al alloy film for display device is directly connected to a semiconductor layer of a thin film transistor on the substrate of a display device. The Al alloy film contains 0.05 to 0.5 atom% of at least one element selected from a group of Co, Ni and Ag, and 0.2 to 1.0 atom% of Ge and/or Cu. The Al alloy film is patterned by dry etching. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于显示装置的Al合金膜，其省略了Al合金膜和TFT的半导体层之间的阻挡金属层，并且减少了TFT基板的制造步骤的数量。解决方案：用于显示装置的Al合金膜直接连接到显示装置的基板上的薄膜晶体管的半导体层。 Al合金膜含有0.05〜0.5原子％的选自Co，Ni和Ag中的至少一种元素，以及0.2〜1.0原子％的Ge和/或Cu。通过干蚀刻对Al合金膜进行图案化。版权所有（C）2010，JPO＆INPIT

72. 发明专利

JP2010062388A Diamond semiconductor element 有权
标题翻译：金刚石半导体元件
公开(公告)号：JP2010062388A
公开(公告)日：2010-03-18
申请号：JP2008227459
申请日：2008-09-04
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： YOKOTA YOSHIHIRO , KAWAKAMI NOBUYUKI , TERAMAE YUMI , TACHIBANA TAKESHI , HIRANO TAKAYUKI
IPC分类号： H01L21/60 , H01L21/28 , H01L21/3205 , H01L23/52
CPC分类号： H01L24/05 , H01L2224/04042 , H01L2224/05554 , H01L2224/45124 , H01L2224/45144 , H01L2224/48 , H01L2224/48463 , H01L2224/48599 , H01L2224/48699 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01052 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/1306 , H01L2924/351 , H01L2224/05556 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a diamond semiconductor element of which a metal pad film does not lift from a diamond layer even at a temperature of around 100°C. SOLUTION: The diamond semiconductor element includes an Al-based or Au-based wiring film, a metal pad film and a metal wire on a diamond film, wherein the metal pad film is electrically connected to the wiring film and the metal wire, and configured with a platinum group metal or an alloy thereof. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：即使在大约100℃的温度下，也可以提供金刚石半导体元件，金刚石半导体元件也不会从金刚石层提升。解决方案：金刚石半导体元件包括在金刚石膜上的Al基或Au基布线膜，金属焊盘和金属线，其中金属焊盘膜电连接到布线膜和金属线并且配置有铂族金属或其合金。版权所有（C）2010，JPO＆INPIT

73. 发明专利

JP2009046762A Al-Ni-La-Si-BASED AL ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：基于Al-Ni-La-Si的AL合金溅射靶和其生产方法
公开(公告)号：JP2009046762A
公开(公告)日：2009-03-05
申请号：JP2008179299
申请日：2008-07-09
申请人： Kobe Steel Ltd , Kobelco Kaken:Kk , 株式会社コベルコ科研 , 株式会社神戸製鋼所
发明人： TAKAGI KATSUHISA , IWASAKI YUKI , TOKUHIRA MASAYA , NANBU AKIRA , OCHI MOTOTAKA , GOTO YASUSHI , KAWAKAMI NOBUYUKI
IPC分类号： C23C14/34 , B22F3/115 , B22F3/17 , B22F3/18 , C22C21/00 , H01L21/28 , H01L21/285
CPC分类号： C23C14/3414 , B22F2998/10 , C22C1/0491 , C22C21/00 , C22F1/04 , B22F9/082 , B22F3/115 , B22F3/15 , B22F3/17 , B22F3/18
摘要： PROBLEM TO BE SOLVED: To provide a technology that can reduce splashes produced when an Al-Ni-La-Si system Al-based alloy sputtering target containing Ni, La and Si is used to deposit a film. SOLUTION: The present invention relates to an Al-Ni-La-Si-based AL alloy sputtering target including Ni, La and Si, in which, when a section from (1/4)t to (3/4)t (t: thickness) in a cross section vertical to the plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2,000 times, (1) the total area of an Al-Ni-based intermetallic compound having an average particle diameter of 0.3 to 3 μm with respect to the total area of the entire Al-Ni-based intermetallic compound is 70% or more in terms of an area fraction, the Al-Ni-based intermetallic compound being mainly composed of Al and Ni; and (2) the total area of an Al-Ni-La-Si-based intermetallic compound having an average particle diameter of 0.2 to 2 μm with respect to the total area of the entire Al-Ni-La-Si-based intermetallic compound is 70% or more in terms of an area fraction, the Al-Ni-La-Si-based intermetallic compound being mainly composed of Al, Ni, La, and Si. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够减少含有Ni，La和Si的Al-Ni-La-Si系Al基合金溅射靶沉积膜时产生飞溅的技术。解决方案：本发明涉及包含Ni，La和Si的Al-Ni-La-Si系AL合金溅射靶，其中当从（1/4）t至（3/4）用扫描型电子显微镜观察放大2000倍的垂直于溅射靶的平面的截面中的t（t：厚度），（1）具有平均值的Al-Ni系金属间化合物的总面积 Al-Ni类金属间化合物的总面积相对于Al-Ni系金属间化合物的总面积为0.3〜3μm的面积分率为70％以上，Al-Ni类金属间化合物主要由Al，Ni构成 ; 和（2）相对于整个Al-Ni-La-Si系金属间化合物的总面积，平均粒径为0.2〜2μm的Al-Ni-La-Si系金属间化合物的总面积以Al，Ni，La，Si为主要成分的Al-Ni-La-Si系金属间化合物的面积率为70％以上。版权所有（C）2009，JPO＆INPIT

74. 发明专利

JP2009010051A Display device manufacturing method 审中-公开
标题翻译：显示设备制造方法
公开(公告)号：JP2009010051A
公开(公告)日：2009-01-15
申请号：JP2007168274
申请日：2007-06-26
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： OKUNO HIROYUKI , GOTO YASUSHI , KAWAKAMI NOBUYUKI
IPC分类号： H01L21/28 , C22C21/00 , G09F9/00 , G09F9/30 , H01L21/3205 , H01L21/336 , H01L23/52 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a display device while preventing the corrosion of an Al alloy film, including a metallic element nobler than Al, in a display device manufacturing process including a step for pattern-forming an insulating film on the Al alloy film by a photolithography method.
SOLUTION: A photoresist is removed by a resist stripper including amines. Next, cleaning is executed by using carbonated water whose pH is ≥3.5 and ≤4.5 for more than five seconds after starting the cleaning.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种制造显示装置的方法，同时在包括具有比Al更贵的金属元素的Al合金膜的腐蚀的显示装置制造工艺中，包括用于图案形成绝缘的步骤通过光刻法在Al合金膜上形成膜。解决方案：通过包括胺的抗蚀剂剥离剂除去光致抗蚀剂。接下来，在开始清洁之后，通过使用pH为≥3.5和≤4.5的碳酸水超过五秒钟进行清洁。版权所有（C）2009，JPO＆INPIT

75. 发明专利

JP2009008768A Manufacturing method of display device 审中-公开
标题翻译：显示装置的制造方法
公开(公告)号：JP2009008768A
公开(公告)日：2009-01-15
申请号：JP2007168266
申请日：2007-06-26
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： OKUNO HIROYUKI , KAWAKAMI NOBUYUKI
IPC分类号： G09F9/30 , G02F1/1343 , G02F1/1368 , G09F9/00 , H01L21/3205 , H01L23/52 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a display device which suppresses corrosion of an aluminum alloy film. SOLUTION: This method of manufacturing the display device includes a process of patterning a dielectric film on an aluminum alloy film by a photolithography method. The aluminum alloy film contains metallic elements more precious than aluminum. A photoresist on the dielectric film is removed by using an organic exfoliation liquid containing amines, then the film is washed with wash water containing an aromatic compound having a hydroxyl group and a formyl group and/or an aromatic compound having a hydroxyl group and a carboxyl group. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供抑制铝合金膜的腐蚀的显示装置的制造方法。解决方案：这种制造显示装置的方法包括通过光刻法在铝合金膜上图形化电介质膜的工艺。铝合金膜含有比铝更贵的金属元素。通过使用含胺的有机剥离液除去电介质膜上的光致抗蚀剂，然后用含有羟基和甲酰基的芳族化合物和/或具有羟基和羧基的芳族化合物的洗涤水洗涤该膜组。版权所有（C）2009，JPO＆INPIT

76. 发明专利

JP2008082768A Thermal flow sensor 审中-公开
标题翻译：热流量传感器
公开(公告)号：JP2008082768A
公开(公告)日：2008-04-10
申请号：JP2006260953
申请日：2006-09-26
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： HIRANO TAKAYUKI , KAWAKAMI NOBUYUKI , AMANAKA MASAHITO
IPC分类号： G01F1/692 , G01F1/684
摘要： PROBLEM TO BE SOLVED: To provide a thermal flow sensor which performs measurement with high detection sensitivity without being damaged by a shearing force of fluid to be measured, when measuring a flow velocity and a flow rate of the fluid flowing in a fluid channel, equipped with channel forming members forming the fluid channel such as a microchannel. SOLUTION: The thermal flow sensor is equipped with: the channel forming members 10, 12 forming the fluid channel 15 for circulating the fluid inside; and a metal wiring film 31 for a heating body formed by having upper and lower surfaces approximately parallel to an inner wall surface on the inner wall surface enclosing the fluid channel 15, and is characterized by interposing a porous film 20 between the metal wiring film 31 for the heating body and the inner wall surface 11 of the fluid channel 15. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种热流量传感器，当测量流体在流体中流动的流速和流量时，可以以高检测灵敏度进行测量，而不会被被测量流体的剪切力损坏通道，配备有形成诸如微通道的流体通道的通道形成构件。解决方案：热流传感器配备有：形成流体通道15的通道形成构件10,12，用于使流体在内部循环; 以及用于加热体的金属布线膜31，其具有大致平行于包围流体通道15的内壁表面上的内壁表面的上表面和下表面而形成，并且其特征在于，在金属布线膜31 用于加热体和流体通道15的内壁表面11.版权所有（C）2008，JPO＆INPIT

77. 发明专利

JP2008010844A Thin-film transistor substrate, and display device 有权
标题翻译：薄膜晶体管基板和显示装置
公开(公告)号：JP2008010844A
公开(公告)日：2008-01-17
申请号：JP2007138245
申请日：2007-05-24
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： KAWAKAMI NOBUYUKI , GOTO YASUSHI , HINO AYA
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/28 , H01L29/417
摘要： PROBLEM TO BE SOLVED: To provide a thin-film transistor substrate where a barrier metal can be omitted to be formed between a semiconductor layer of a thin-film transistor and source and drain electrodes (barrier metal is not required to be formed between the semiconductor layer of the thin-film transistor and the source and drain electrodes), and to provide a display device. SOLUTION: (1) The thin-film transistor substrate having a semiconductor layer of the thin-film transistor, the source electrode, the drain electrode, and a transparent conductive film has a structure in which the source and drain electrodes are directly connected to the semiconductor layer of the thin-film transistor; and the source and drain electrodes include an Al alloy thin film containing Ni of 0.1 to 6.0 atomic%, La of 0.1 to 1.0 atomic%, and Si of 0.1 to 1.5 atomic%. (2) The display device is provided with the thin-film transistor substrate. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种薄膜晶体管基板，其中在薄膜晶体管的半导体层和源极和漏极之间可以省略阻挡金属（不需要形成阻挡金属）在薄膜晶体管的半导体层与源极和漏极之间），并提供显示装置。解决方案：（1）具有薄膜晶体管，源极，漏电极和透明导电膜的半导体层的薄膜晶体管基板具有其中源极和漏极直接连接到薄膜晶体管的半导体层; 源极和漏极包括含有0.1至6.0原子％的Ni，0.1至1.0原子％的La和0.1至1.5原子％的Si的Al合金薄膜。（2）显示装置设置有薄膜晶体管基板。版权所有（C）2008，JPO＆INPIT

78. 发明专利

JP2007302739A Method for producing porous material 有权
标题翻译：生产多孔材料的方法
公开(公告)号：JP2007302739A
公开(公告)日：2007-11-22
申请号：JP2006130384
申请日：2006-05-09
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： TANAKA TAKEHARU , HIRANO TAKAYUKI , KAWAKAMI NOBUYUKI , YAMASHITA TAKESHI , SUZUKI TETSUO
IPC分类号： C08J9/28 , C01B33/155
摘要： PROBLEM TO BE SOLVED: To provide a porous substrate having no defect but uniform predetermined thickness as a dielectric film usable for electronic circuit substrates, and to provide a method for easily obtaining such porous substrates.
SOLUTION: The method for producing a porous substrate 6 formed by using a molding container comprises providing sol at atmospheric pressure and gelling the sol in the molding container by heating the sol at a higher pressure than the atmospheric pressure.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种不具有缺陷但均匀的预定厚度的多孔基材作为可用于电子电路基板的电介质膜，并提供容易获得这种多孔基材的方法。解决方案：通过使用成型容器形成的多孔基材6的制造方法包括在大气压下提供溶胶，并通过在比大气压更高的压力下加热溶胶，使成型容器中的溶胶凝胶化。版权所有（C）2008，JPO＆INPIT

79. 发明专利

JP2007294889A Membrane structure element, and method of manufacturing same 有权
标题翻译：膜结构元件及其制造方法
公开(公告)号：JP2007294889A
公开(公告)日：2007-11-08
申请号：JP2007057956
申请日：2007-03-08
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： HIRANO TAKAYUKI , KAWAKAMI NOBUYUKI , AMANAKA MASAHITO
IPC分类号： H01L21/316 , G01F1/69 , G01J1/02 , H01L37/00
摘要： PROBLEM TO BE SOLVED: To provide a membrane structure element which can be easily fabricated and has high heat insulation and high quality, and to provide a method of manufacturing the same. SOLUTION: In this manufacturing method, the membrane structural element is manufactured which includes a membrane formed of a silicon oxide film and a substrate for supporting the membrane in the air by supporting a part of the outer edge of the membrane. The method includes a film forming step of forming a heat-shrinkable silicon oxide film 13 on a surface of a silicon substrate 2 by plasma CVD, a heat treatment step of performing heat treatment for thermally shrinking the silicon oxide film 13 having been formed on the substrate 1, and a removal step of forming a concave portion 4 by removing a part of the substrate 2 such that a portion corresponding to the membrane in the silicon oxide film 13 is supported in the air relative to the substrate 2. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种易于制造并具有高隔热性和高质量的膜结构元件，并提供其制造方法。解决方案：在该制造方法中，制造膜结构元件，其包括由氧化硅膜形成的膜和用于通过支撑膜的外边缘的一部分来将膜支撑在空气中的基板。该方法包括：通过等离子体CVD在硅衬底2的表面上形成热收缩性氧化硅膜13的成膜步骤;进行热处理的热处理步骤，该热处理步骤将已形成的氧化硅膜13热收缩基板1，以及通过去除基板2的一部分而形成凹部4的去除步骤，使得与氧化硅膜13中的膜相对应的部分相对于基板2被支撑在空气中。（C）2008，JPO＆INPIT

80. 发明专利

JP2007234911A Diamond transistor device opearting under high temperatures, and thermometer and amplifier using it 有权
标题翻译：高温下的金刚石晶体管器件，使用它的温度计和放大器
公开(公告)号：JP2007234911A
公开(公告)日：2007-09-13
申请号：JP2006055565
申请日：2006-03-01
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： YOKOTA YOSHIHIRO , KAWAKAMI NOBUYUKI , HAYASHI KAZUYUKI , TACHIBANA TAKESHI , KOBASHI KOJI
IPC分类号： H01L29/78 , G01K7/01
摘要： PROBLEM TO BE SOLVED: To provide a diamond transistor capable of operating under high temperatures without providing a cooling device with the use of the diamond semiconductor operating under high temperatures, and to provide a device operating under high temperatures using it. SOLUTION: The diamond field-effect transistor 1 uses boron-doped diamond layers 3a, 3b as a source and a drain, and an underdoped-diamond layer 5 as a channel, and further, a gate electrode 10 is provided on a gate insulating film 9 on the diamond layer 5. Assuming that the drain current is Id, the absolute temperature is T(K), constant numbers determined by the field-effect transistor and a bias condition are a0, a1, and the Boltzmann constant is kB(1.38×10 -23 J/K), an equality Id=a0×expä-a1/(kB×T)} is fulfilled. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在高温下运行的金刚石晶体管，而不需要使用在高温下运行的金刚石半导体来提供冷却装置，并提供使用它在高温下运行的装置。解决方案：金刚石场效应晶体管1使用硼掺杂金刚石层3a，3b作为源极和漏极，并且掺杂金刚石层5作为沟道，此外，栅电极10设置在假设漏极电流为Id，绝对温度为T（K），由场效应晶体管确定的常数和偏置条件为a0，a1，玻尔兹曼常数为 kB（1.38×10 -23 J / K），满足等式Id = a0×expa-a1 /（kB×T）}。版权所有（C）2007，JPO＆INPIT

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