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71. 发明申请

US20110260243A1 POWER SEMICONDUCTOR DEVICE 有权
标题翻译：功率半导体器件
公开(公告)号：US20110260243A1
公开(公告)日：2011-10-27
申请号：US13052893
申请日：2011-03-21
申请人： Wataru Saito , Syotaro Ono , Munehisa Yabuzaki , Shunji Taniuchi , Miho Watanabe
发明人： Wataru Saito , Syotaro Ono , Munehisa Yabuzaki , Shunji Taniuchi , Miho Watanabe
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0634 , H01L29/0638 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/408 , H01L29/512 , H01L29/513 , H01L29/517 , H01L29/66734 , H01L29/7811
摘要： According to one embodiment, a power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type, a fourth semiconductor layer, a fifth semiconductor layer, a first and second main electrode, a first and second insulating film and a control electrode. The second and third layers are provided periodically on the first layer. The fourth layer is provided on the third layer. The fifth layer is selectively provided on the fourth layer. The first film is provided on sidewalls of a trench that reaches from a surface of the fifth layer to the second layer. The second film is provided closer to a bottom side of the trench than the first film and has a higher permittivity than the first film. The control electrode is embedded in the trench.
摘要翻译：根据一个实施例，功率半导体器件包括第一导电类型的第一半导体层，第一导电类型的第二半导体层和第二导电类型的第三半导体层，第四半导体层，第五半导体层，第一和第二主电极，第一和第二绝缘膜和控制电极。第二层和第三层周期性地设置在第一层上。第四层设置在第三层上。第五层选择性地设置在第四层上。第一膜设置在从第五层的表面到第二层的沟槽的侧壁上。第二膜比第一膜更靠近沟槽的底侧，并且具有比第一膜更高的介电常数。控制电极嵌入沟槽中。

72. 发明授权

US07951960B2 Black color material and toner 有权
标题翻译：黑色材料和墨粉
公开(公告)号：US07951960B2
公开(公告)日：2011-05-31
申请号：US12241120
申请日：2008-09-30
申请人： Shinji Hasegawa , Minquan Tian , Yuka Ito , Kazuhiko Hirokawa , Miho Watanabe , Makoto Furuki
发明人： Shinji Hasegawa , Minquan Tian , Yuka Ito , Kazuhiko Hirokawa , Miho Watanabe , Makoto Furuki
IPC分类号： C07D207/325 , G03G9/09
CPC分类号： C09B59/00
摘要： The black color material includes a condensation product of a pyrrole compound represented by the following formula (1) and a squaric acid represented by the following formula (2):
摘要翻译：黑色材料包括由下式（1）表示的吡咯化合物与由下式（2）表示的方酸的缩合产物：

73. 发明授权

US07755138B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07755138B2
公开(公告)日：2010-07-13
申请号：US12537219
申请日：2009-08-06
申请人： Wataru Saito , Syotaro Ono , Nana Hatano , Hiroshi Ohta , Miho Watanabe
发明人： Wataru Saito , Syotaro Ono , Nana Hatano , Hiroshi Ohta , Miho Watanabe
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/7806
摘要： A semiconductor device of the invention includes: a super junction structure of an n-type pillar layer and a p-type pillar layer; a base layer provided on the p-type pillar layer; a source layer selectively provided on a surface of the base layer; a gate insulating film provided on a portion being in contact with the base layer, a portion being in contact with the source layer and a portion being in contact with the n-type pillar layer on a portion of a junction between the n-type pillar layer and the p-type pillar layer; a control electrode provided opposed to the base layer, the source layer and the n-type pillar layer through the gate insulating film; and a source electrode electrically connected to the base layer, the source layer and the n-type layer. The source electrode is contact with the surface of the n-type pillar layer located between the control electrodes to form a Schottky junction.
摘要翻译：本发明的半导体器件包括：n型柱层和p型柱层的超结结构; 设置在p型支柱层上的基底层; 源层选择性地设置在基层的表面上; 设置在与所述基底层接触的部分上的栅极绝缘膜，与所述源极层接触的部分和在所述n型支柱的接合部的一部分上与所述n型支柱层接触的部分层和p型支柱层; 控制电极，其通过所述栅极绝缘膜与所述基极层，所述源极层和所述n型支柱层相对设置; 以及与基极层，源极层和n型层电连接的源电极。源电极与位于控制电极之间的n型支柱层的表面接触以形成肖特基结。

74. 发明授权

US5801483A Fluorescent lamp having visible and UV radiation 失效
标题翻译：荧光灯具有可见光和紫外线辐射
公开(公告)号：US5801483A
公开(公告)日：1998-09-01
申请号：US608496
申请日：1996-02-28
申请人： Miho Watanabe , Hisashi Honda , Keiji Hatakeyama , Yuichi Sakakiabra , Akiko Saitou
发明人： Miho Watanabe , Hisashi Honda , Keiji Hatakeyama , Yuichi Sakakiabra , Akiko Saitou
IPC分类号： A61L9/20 , H01J61/35 , H01J61/44 , H01J61/48 , H01J1/62
CPC分类号： H01J61/48
摘要： A fluorescent lamp includes a light-transmitting envelope, means for generating a discharge within envelope, a discharge sustaining fill contained in envelope for emitting ultraviolet rays during the lamp operation and a phosphor layer coated on an inner surface of envelope. The phosphor layer converts the ultraviolet rays into visible light and ultraviolet radiation within a wavelength range of 320 nm to 410 nm so as to have radiant flux ratio of ultraviolet radiation of 5 to 50 percent of the entire radiant flux of the lamp.
摘要翻译：荧光灯包括透光外壳，用于在外壳内产生放电的装置，包含在灯操作期间发射紫外线的外壳中的放电维持填充物和涂覆在外壳的内表面上的荧光体层。荧光体层将紫外线转换成在320nm至410nm的波长范围内的可见光和紫外线辐射，以使紫外线的辐射通量比为灯的整个辐射通量的5％至50％。

75. 发明授权

US08678618B2 Self-ballasted lamp having a light-transmissive member in contact with light emitting elements and lighting equipment incorporating the same 失效
标题翻译：具有与发光元件接触的透光构件的自镇流灯和包含该发光元件的照明设备
公开(公告)号：US08678618B2
公开(公告)日：2014-03-25
申请号：US12885849
申请日：2010-09-20
申请人： Makoto Sakai , Masao Segawa , Nobuo Shibano , Kiyoshi Nishimura , Kozo Ogawa , Masahiko Kamata , Toshiya Tanaka , Miho Watanabe , Shuhei Matsuda
发明人： Makoto Sakai , Masao Segawa , Nobuo Shibano , Kiyoshi Nishimura , Kozo Ogawa , Masahiko Kamata , Toshiya Tanaka , Miho Watanabe , Shuhei Matsuda
IPC分类号： F21V29/00
CPC分类号： F21V29/507 , F21K9/232 , F21V3/04 , F21V29/506 , F21V29/89 , F21Y2107/00 , F21Y2107/40 , F21Y2115/10
摘要： A self-ballasted lamp includes: a base body; a light-emitting module and a globe which are provided at one end side of the base body; a cap provided at the other end side of the base body; and a lighting circuit housed between the base body and the cap. The light-emitting module has light-emitting portions each using a semiconductor light-emitting element, and a support portion projected at one end side of the base body, and the light-emitting portions are disposed at least on a circumferential surface of the support portion. A light-transmissive member is interposed between the light-emitting module and an inner face of the globe.
摘要翻译：自镇流灯包括：基体; 发光模块和球体，其设置在所述基体的一端侧; 设置在所述基体的另一端侧的盖; 以及容纳在基体和盖之间的照明电路。发光模块具有各自使用半导体发光元件的发光部和在基体的一端侧突出的支撑部，发光部至少设置在支撑体的周面上一部分。在发光模块和球体的内表面之间插入透光构件。

76. 发明授权

US08643091B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08643091B2
公开(公告)日：2014-02-04
申请号：US13052028
申请日：2011-03-18
申请人： Wataru Saito , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Wataru Saito , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7839 , H01L29/0619 , H01L29/0623 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813
摘要： A semiconductor device includes first, second, third, and fourth semiconductor layers of alternating first and second conductivity types, an embedded electrode in a first trench that penetrates through the second semiconductor layer, a control electrode above the embedded electrode in the first trench, and first and second main electrodes. The fourth semiconductor layer is selectively provided in the first semiconductor layer and is connected to a lower end of a second trench, which penetrates through the second semiconductor layer. The first main electrode is electrically connected to the first semiconductor layer, and the second main electrode is in the second trench and electrically connected to the second, third, and fourth semiconductor layers. The embedded electrode is electrically connected to the second main electrode or the control electrode. A Shottky junction formed of the second main electrode and the first semiconductor layer is formed at a sidewall of the second trench.
摘要翻译：半导体器件包括交替的第一和第二导电类型的第一，第二，第三和第四半导体层，穿透第二半导体层的第一沟槽中的嵌入电极，在第一沟槽中的嵌入电极上方的控制电极，以及第一和第二主电极。第四半导体层选择性地设置在第一半导体层中，并且连接到穿过第二半导体层的第二沟槽的下端。第一主电极与第一半导体层电连接，第二主电极位于第二沟槽中，并与第二，第三和第四半导体层电连接。嵌入电极与第二主电极或控制电极电连接。在第二沟槽的侧壁处形成由第二主电极和第一半导体层形成的肖特基结。

77. 发明授权

US08592917B2 Semiconductor device and method for manufacturing same 有权
公开(公告)号：US08592917B2
公开(公告)日：2013-11-26
申请号：US13235302
申请日：2011-09-16
申请人： Syotaro Ono , Wataru Saito , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita , Toshiyuki Naka
发明人： Syotaro Ono , Wataru Saito , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita , Toshiyuki Naka
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/42376 , H01L29/4238
摘要： According to an embodiment, a semiconductor device includes a second semiconductor layer provided on a first semiconductor layer and including first pillars and second pillars. A first control electrode is provided in a trench of the second semiconductor layer and a second control electrode is provided on the second semiconductor layer and connected to the first control electrode. A first semiconductor region is provided on a surface of the second semiconductor layer except for a portion under the second control electrode. A second semiconductor region is provided on a surface of the first semiconductor region, the second semiconductor region being apart from the portion under the second control electrode and a third semiconductor region is provided on the first semiconductor region. A first major electrode is connected electrically to the first semiconductor layer and a second major electrode is connected electrically to the second and the third semiconductor region.

78. 发明授权

US08412067B2 Laser fixing device and image forming apparatus 有权
标题翻译：激光定影装置和图像形成装置
公开(公告)号：US08412067B2
公开(公告)日：2013-04-02
申请号：US12728398
申请日：2010-03-22
申请人： Miho Watanabe , Makoto Furuki , Naoyuki Egusa , Tetsuro Kodera , Takashi Matsubara , Shinji Hasegawa
发明人： Miho Watanabe , Makoto Furuki , Naoyuki Egusa , Tetsuro Kodera , Takashi Matsubara , Shinji Hasegawa
IPC分类号： G03G21/20 , G03G15/20
CPC分类号： G03G15/2007
摘要： According to an aspect of the invention, a laser fixing device includes a laser beam generating device and an airflow generating unit. The laser beam generating device generates laser beams and irradiates a recording medium transported with the laser beams. The airflow generating unit generates airflow flowing between the laser beam generating device and the recording medium. A flow speed of the airflow in a transport direction of the recording medium in an irradiation position of the laser beams is higher than a transport speed of the recording medium.
摘要翻译：根据本发明的一个方面，激光定影装置包括激光束产生装置和气流发生单元。激光束产生装置产生激光束并照射用激光束传送的记录介质。气流发生单元产生在激光束产生装置和记录介质之间流动的气流。在激光束的照射位置处的记录介质的传送方向上的气流的流速高于记录介质的传送速度。

79. 发明授权

US08343761B2 Methods of generating and using antibody-producing cells 失效
标题翻译：产生和使用抗体产生细胞的方法
公开(公告)号：US08343761B2
公开(公告)日：2013-01-01
申请号：US13187677
申请日：2011-07-21
申请人： Masayuki Tsuchiya , Masami Suzuki , Kenji Yoshida , Etsuko Fujii , Miho Watanabe , Koichi Matsubara , Yu Jau Chen , Juliana Sim
发明人： Masayuki Tsuchiya , Masami Suzuki , Kenji Yoshida , Etsuko Fujii , Miho Watanabe , Koichi Matsubara , Yu Jau Chen , Juliana Sim
IPC分类号： C12N5/06 , A01K67/00 , C12N5/00
CPC分类号： A01K67/027 , A01K2267/01 , A61K35/16 , C07K16/00 , C07K16/30
摘要： An objective of the present invention is to facilitate the acquisition of antibody-producing cells that are infiltrating virus-infected cells, cancer cells, abnormal cells forming a benign hyperplasia, and the like, and to improve the efficiency of the production of antibodies as well as nucleic acids encoding them from the antibody-producing cells.The present inventors discovered that, when cancer tissues comprising infiltrating lymphocytes are transplanted into highly immunodeficient animals that do not have T cells, B cells, and NK cells and further exhibit a low IFN production ability, the differentiation and proliferation of infiltrating lymphocytes are unexpectedly promoted, and the number of plasma cells that produce antibodies recognizing cancer tissues increases dramatically, plasma cells can be separated easily, and antibodies or nucleic acids encoding them can be easily prepared from the plasma cells.
摘要翻译：本发明的目的是便于获得渗透病毒感染细胞的抗体产生细胞，癌细胞，形成良性增生的异常细胞等，以及提高抗体生产的效率作为从抗体产生细胞编码它们的核酸。本发明人发现，当将包含浸润性淋巴细胞的癌组织移植到不具有T细胞，B细胞和NK细胞的高度免疫缺陷的动物中并且进一步表现出低的IFN产生能力时，意外地促进了浸润性淋巴细胞的分化和增殖并且产生识别癌组织的抗体的浆细胞的数量急剧增加，可以容易地分离浆细胞，并且可以容易地从浆细胞制备抗体或编码它们的核酸。

80. 发明授权

US08010006B2 Fixing device, image-forming device, and fixing method 有权
标题翻译：固定装置，成像装置和固定方法
公开(公告)号：US08010006B2
公开(公告)日：2011-08-30
申请号：US12500229
申请日：2009-07-09
申请人： Takashi Matsubara , Miho Watanabe , Shinji Hasegawa , Makoto Furuki
发明人： Takashi Matsubara , Miho Watanabe , Shinji Hasegawa , Makoto Furuki
IPC分类号： G03G15/20
CPC分类号： G03G15/2007
摘要： A fixing device includes: a fixing unit that irradiates light to a color material transferred to a medium at a position specified by image data, to fix the color material on the medium; and a control unit that controls irradiation of light of the fixing unit so that an energy of light irradiated to an image-forming area on the medium including an area in which the color material has been transferred at the position specified by the image data is lower than an energy of light irradiated to a non image-forming area on the medium other than the image-forming area.
摘要翻译：定影装置包括：定影单元，其将光转印到由图像数据指定的位置处转印到介质上的彩色材料，以将彩色材料固定在介质上; 以及控制单元，其控制所述定影单元的光的照射，使得照射到所述介质上的图像形成区域的光的能量包括在由所述图像数据指定的位置处已经传送了所述颜色材料的区域的介质的能量较低比照射到图像形成区域以外的介质上的非图像形成区域的光的能量。

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