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1. 发明授权

US08643091B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08643091B2
公开(公告)日：2014-02-04
申请号：US13052028
申请日：2011-03-18
申请人： Wataru Saito , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Wataru Saito , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7839 , H01L29/0619 , H01L29/0623 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813
摘要： A semiconductor device includes first, second, third, and fourth semiconductor layers of alternating first and second conductivity types, an embedded electrode in a first trench that penetrates through the second semiconductor layer, a control electrode above the embedded electrode in the first trench, and first and second main electrodes. The fourth semiconductor layer is selectively provided in the first semiconductor layer and is connected to a lower end of a second trench, which penetrates through the second semiconductor layer. The first main electrode is electrically connected to the first semiconductor layer, and the second main electrode is in the second trench and electrically connected to the second, third, and fourth semiconductor layers. The embedded electrode is electrically connected to the second main electrode or the control electrode. A Shottky junction formed of the second main electrode and the first semiconductor layer is formed at a sidewall of the second trench.
摘要翻译：半导体器件包括交替的第一和第二导电类型的第一，第二，第三和第四半导体层，穿透第二半导体层的第一沟槽中的嵌入电极，在第一沟槽中的嵌入电极上方的控制电极，以及第一和第二主电极。第四半导体层选择性地设置在第一半导体层中，并且连接到穿过第二半导体层的第二沟槽的下端。第一主电极与第一半导体层电连接，第二主电极位于第二沟槽中，并与第二，第三和第四半导体层电连接。嵌入电极与第二主电极或控制电极电连接。在第二沟槽的侧壁处形成由第二主电极和第一半导体层形成的肖特基结。

2. 发明授权

US08592917B2 Semiconductor device and method for manufacturing same 有权
公开(公告)号：US08592917B2
公开(公告)日：2013-11-26
申请号：US13235302
申请日：2011-09-16
申请人： Syotaro Ono , Wataru Saito , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita , Toshiyuki Naka
发明人： Syotaro Ono , Wataru Saito , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita , Toshiyuki Naka
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/42376 , H01L29/4238
摘要： According to an embodiment, a semiconductor device includes a second semiconductor layer provided on a first semiconductor layer and including first pillars and second pillars. A first control electrode is provided in a trench of the second semiconductor layer and a second control electrode is provided on the second semiconductor layer and connected to the first control electrode. A first semiconductor region is provided on a surface of the second semiconductor layer except for a portion under the second control electrode. A second semiconductor region is provided on a surface of the first semiconductor region, the second semiconductor region being apart from the portion under the second control electrode and a third semiconductor region is provided on the first semiconductor region. A first major electrode is connected electrically to the first semiconductor layer and a second major electrode is connected electrically to the second and the third semiconductor region.

3. 发明授权

US08816410B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08816410B2
公开(公告)日：2014-08-26
申请号：US13357381
申请日：2012-01-24
申请人： Wataru Saito , Syotaro Ono , Toshiyuki Naka , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Wataru Saito , Syotaro Ono , Toshiyuki Naka , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/772
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/0634 , H01L29/0865 , H01L29/0878 , H01L29/0882 , H01L29/1095 , H01L29/42356 , H01L29/42368 , H01L29/42372 , H01L29/4238 , H01L29/7395
摘要： A first semiconductor device of an embodiment includes a first semiconductor layer of a first conductivity type, a first control electrode, an extraction electrode, a second control electrode, and a third control electrode. The first control electrode faces a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of a first conductivity type, via a first insulating film. The second control electrode and the third control electrode are electrically connected to the extraction electrode, and face the second semiconductor layer under the extraction electrode, via the second insulating film. At least a part of the second control electrode and the whole of the third control electrode are provided under the extraction electrode. The electrical resistance of the second control electrode is higher than the electrical resistance of the third control electrode.
摘要翻译：实施例的第一半导体器件包括第一导电类型的第一半导体层，第一控制电极，引出电极，第二控制电极和第三控制电极。第一控制电极通过第一绝缘膜面对第一导电类型的第二半导体层，第二导电类型的第三半导体层和第一导电类型的第四半导体层。第二控制电极和第三控制电极通过第二绝缘膜电连接到引出电极，并且与提取电极下方的第二半导体层相对。第二控制电极和整个第三控制电极的至少一部分设置在引出电极的下方。第二控制电极的电阻高于第三控制电极的电阻。

4. 发明申请

US20120012929A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120012929A1
公开(公告)日：2012-01-19
申请号：US13051987
申请日：2011-03-18
申请人： Wataru SAITO , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Wataru SAITO , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0865 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/42372 , H01L29/66734
摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, a fourth semiconductor layer of the second conductivity type, a fifth semiconductor layer of the first conductivity type, a control electrode, a first main electrode, a second main electrode, and a sixth semiconductor layer of the first conductivity type. The second semiconductor layer and the third semiconductor layer are alternately provided on the first semiconductor layer in a direction substantially parallel to a major surface of the first semiconductor layer. The fourth semiconductor layer is provided on the second semiconductor layer and the third semiconductor layer. The fifth semiconductor layer is selectively provided on a surface of the fourth semiconductor layer. The control electrode is provided in a trench via an insulating film. The trench penetrates through the fourth semiconductor layer from a surface of the fifth semiconductor layer and is in contact with the second semiconductor layer. The first main electrode is connected to the first semiconductor layer. The second main electrode is connected to the fourth semiconductor layer and the fifth semiconductor layer. The sixth semiconductor layer is provided between the fourth semiconductor layer and the second semiconductor layer. An impurity concentration of the sixth semiconductor layer is higher than an impurity concentration of the second semiconductor layer.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的第一半导体层，第一导电类型的第二半导体层，第二导电类型的第三半导体层，第二导电类型的第四半导体层，第一导电类型的第五半导体层，第一导电类型的控制电极，第一主电极，第二主电极和第六半导体层。第二半导体层和第三半导体层在与第一半导体层的主表面大致平行的方向上交替地设置在第一半导体层上。第四半导体层设置在第二半导体层和第三半导体层上。第五半导体层选择性地设置在第四半导体层的表面上。控制电极通过绝缘膜设置在沟槽中。沟槽从第五半导体层的表面穿过第四半导体层并且与第二半导体层接触。第一主电极连接到第一半导体层。第二主电极连接到第四半导体层和第五半导体层。第六半导体层设置在第四半导体层和第二半导体层之间。第六半导体层的杂质浓度高于第二半导体层的杂质浓度。

5. 发明授权

US08829608B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08829608B2
公开(公告)日：2014-09-09
申请号：US13051987
申请日：2011-03-18
申请人： Wataru Saito , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Wataru Saito , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L29/0865 , H01L29/0878 , H01L29/1095 , H01L29/407 , H01L29/42372 , H01L29/66734
摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, a fourth semiconductor layer of the second conductivity type, a fifth semiconductor layer of the first conductivity type, a control electrode, a first main electrode, a second main electrode, and a sixth semiconductor layer of the first conductivity type. The second semiconductor layer and the third semiconductor layer are alternately provided on the first semiconductor layer in a direction substantially parallel to a major surface of the first semiconductor layer. The fourth semiconductor layer is provided on the second semiconductor layer and the third semiconductor layer. The fifth semiconductor layer is selectively provided on a surface of the fourth semiconductor layer. The control electrode is provided in a trench via an insulating film. The trench penetrates through the fourth semiconductor layer from a surface of the fifth semiconductor layer and is in contact with the second semiconductor layer. The first main electrode is connected to the first semiconductor layer. The second main electrode is connected to the fourth semiconductor layer and the fifth semiconductor layer. The sixth semiconductor layer is provided between the fourth semiconductor layer and the second semiconductor layer. An impurity concentration of the sixth semiconductor layer is higher than an impurity concentration of the second semiconductor layer.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的第一半导体层，第一导电类型的第二半导体层，第二导电类型的第三半导体层，第二导电类型的第四半导体层，第一导电类型的第五半导体层，第一导电类型的控制电极，第一主电极，第二主电极和第六半导体层。第二半导体层和第三半导体层在与第一半导体层的主表面大致平行的方向上交替地设置在第一半导体层上。第四半导体层设置在第二半导体层和第三半导体层上。第五半导体层选择性地设置在第四半导体层的表面上。控制电极通过绝缘膜设置在沟槽中。沟槽从第五半导体层的表面穿过第四半导体层并且与第二半导体层接触。第一主电极连接到第一半导体层。第二主电极连接到第四半导体层和第五半导体层。第六半导体层设置在第四半导体层和第二半导体层之间。第六半导体层的杂质浓度高于第二半导体层的杂质浓度。

6. 发明授权

US08482028B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08482028B2
公开(公告)日：2013-07-09
申请号：US13424340
申请日：2012-03-19
申请人： Wataru Saito , Syotaro Ono , Toshiyuki Naka , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Wataru Saito , Syotaro Ono , Toshiyuki Naka , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/772 , H01L21/335
CPC分类号： H01L29/7811 , H01L21/266 , H01L29/0619 , H01L29/0634 , H01L29/0696 , H01L29/0865 , H01L29/0878 , H01L29/1095 , H01L29/41741 , H01L29/66712
摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductive type, and a periodic array structure having a second semiconductor layer of a first conductive type and a third semiconductor layer of a second conductive type periodically arrayed on the first semiconductor layer in a direction parallel with a major surface of the first semiconductor layer. The second semiconductor layer and the third semiconductor layer are disposed in dots on the first semiconductor layer. A periodic structure in the outermost peripheral portion of the periodic array structure is different from a periodic structure of the periodic array structure in a portion other than the outermost peripheral portion.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的第一半导体层，以及周期性阵列结构，其具有第一导电类型的第二半导体层和周期性排列在第一半导体上的第二导电类型的第三半导体层层在与第一半导体层的主表面平行的方向上。第二半导体层和第三半导体层以点形式设置在第一半导体层上。周期性阵列结构的最外围部分中的周期性结构不同于最外周部分以外的部分的周期性阵列结构的周期性结构。

7. 发明申请

US20120074461A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120074461A1
公开(公告)日：2012-03-29
申请号：US13235302
申请日：2011-09-16
申请人： Syotaro ONO , Wataru Saito , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Syotaro ONO , Wataru Saito , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/78 , H01L21/336 , H01L21/331 , H01L29/739
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0696 , H01L29/1095 , H01L29/42376 , H01L29/4238
摘要： According to an embodiment, a semiconductor device includes a second semiconductor layer provided on a first semiconductor layer and including first pillars and second pillars. A first control electrode is provided in a trench of the second semiconductor layer and a second control electrode is provided on the second semiconductor layer and connected to the first control electrode. A first semiconductor region is provided on a surface of the second semiconductor layer except for a portion under the second control electrode. A second semiconductor region is provided on a surface of the first semiconductor region, the second semiconductor region being apart from the portion under the second control electrode and a third semiconductor region is provided on the first semiconductor region. A first major electrode is connected electrically to the first semiconductor layer and a second major electrode is connected electrically to the second and the third semiconductor region.
摘要翻译：根据实施例，半导体器件包括设置在第一半导体层上并包括第一柱和第二柱的第二半导体层。第一控制电极设置在第二半导体层的沟槽中，第二控制电极设置在第二半导体层上并连接到第一控制电极。除了第二控制电极下方的部分之外，在第二半导体层的表面上设置第一半导体区域。第二半导体区域设置在第一半导体区域的表面上，第二半导体区域与第二控制电极下方的部分分开，第三半导体区域设置在第一半导体区域上。第一主电极与第一半导体层电连接，第二主电极与第二和第三半导体区域电连接。

8. 发明申请

US20120056262A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20120056262A1
公开(公告)日：2012-03-08
申请号：US13052028
申请日：2011-03-18
申请人： Wataru SAITO , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Wataru SAITO , Syotaro Ono , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/78
CPC分类号： H01L29/7839 , H01L29/0619 , H01L29/0623 , H01L29/0878 , H01L29/402 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813
摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, an embedded electrode, a control electrode, a fourth semiconductor layer of the second conductivity type, a first main electrode, and a second main electrode. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The embedded electrode is provided in a first trench via a first insulating film. The first trench penetrates through the second semiconductor layer from a surface of the third semiconductor layer to reach the first semiconductor layer. The control electrode is provided above the embedded electrode via a second insulating film in the first trench. The fourth semiconductor layer is selectively provided in the first semiconductor layer and is connected to a lower end of a second trench. The second trench penetrates through the second semiconductor layer from the surface of the third semiconductor layer to reach the first semiconductor layer. The first main electrode is electrically connected to the first semiconductor layer. The second main electrode is provided in the second trench and connected to the second semiconductor layer, the third semiconductor layer and the fourth semiconductor layer. The embedded electrode is electrically connected to one of the second main electrode and the control electrode. A Schottky junction formed of the second main electrode and the first semiconductor layer is formed at a sidewall of the second trench.
摘要翻译：根据一个实施例，半导体器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层，第一导电类型的第三半导体层，嵌入电极，控制电极，第四半导体第二导电类型的层，第一主电极和第二主电极。第二半导体层设置在第一半导体层上。第三半导体层设置在第二半导体层上。嵌入式电极经由第一绝缘膜设置在第一沟槽中。第一沟槽从第三半导体层的表面穿过第二半导体层到达第一半导体层。控制电极通过第一沟槽中的第二绝缘膜设置在嵌入电极的上方。第四半导体层选择性地设置在第一半导体层中并连接到第二沟槽的下端。第二沟槽从第三半导体层的表面穿过第二半导体层到达第一半导体层。第一主电极电连接到第一半导体层。第二主电极设置在第二沟槽中并连接到第二半导体层，第三半导体层和第四半导体层。嵌入电极与第二主电极和控制电极中的一个电连接。在第二沟槽的侧壁处形成由第二主电极和第一半导体层形成的肖特基结。

9. 发明申请

US20120217555A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120217555A1
公开(公告)日：2012-08-30
申请号：US13357381
申请日：2012-01-24
申请人： Wataru SAITO , Syotaro Ono , Toshiyuki Naka , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Wataru SAITO , Syotaro Ono , Toshiyuki Naka , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/772
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/0634 , H01L29/0865 , H01L29/0878 , H01L29/0882 , H01L29/1095 , H01L29/42356 , H01L29/42368 , H01L29/42372 , H01L29/4238 , H01L29/7395
摘要： A first semiconductor device of an embodiment includes a first semiconductor layer of a first conductivity type, a first control electrode, an extraction electrode, a second control electrode, and a third control electrode. The first control electrode faces a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of a first conductivity type, via a first insulating film. The second control electrode and the third control electrode are electrically connected to the extraction electrode, and face the second semiconductor layer under the extraction electrode, via the second insulating film. At least a part of the second control electrode and the whole of the third control electrode are provided under the extraction electrode. The electrical resistance of the second control electrode is higher than the electrical resistance of the third control electrode.
摘要翻译：实施例的第一半导体器件包括第一导电类型的第一半导体层，第一控制电极，引出电极，第二控制电极和第三控制电极。第一控制电极通过第一绝缘膜面对第一导电类型的第二半导体层，第二导电类型的第三半导体层和第一导电类型的第四半导体层。第二控制电极和第三控制电极通过第二绝缘膜电连接到引出电极，并且与提取电极下方的第二半导体层相对。第二控制电极和整个第三控制电极的至少一部分设置在引出电极的下方。第二控制电极的电阻高于第三控制电极的电阻。

10. 发明申请

US20120068258A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120068258A1
公开(公告)日：2012-03-22
申请号：US13052908
申请日：2011-03-21
申请人： Syotaro ONO , Wataru Saito , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
发明人： Syotaro ONO , Wataru Saito , Shunji Taniuchi , Miho Watanabe , Hiroaki Yamashita
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L29/7811 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/84 , H01L29/0619 , H01L29/402 , H01L29/42372 , H01L29/66712 , H01L2224/37013 , H01L2224/40245 , H01L2224/40479 , H01L2224/40499 , H01L2224/4103 , H01L2224/84203 , H01L2924/00014 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00 , H01L2224/37099
摘要： According to one embodiment, a semiconductor device includes a first main electrode, a control electrode, an extraction electrode, a second insulating film, a plurality of contact electrodes, and a control terminal. The first main electrode is electrically connected to a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type selectively provided on a surface of the first semiconductor region. The control electrode is provided on the first semiconductor region via a first insulating film. The extraction electrode is electrically connected to the control electrode. The second insulating film is provided on the first main electrode and the extraction electrode. The plurality of contact electrodes are provided in an inside of a plurality of first contact holes formed in the second insulating film and are electrically connected to the extraction electrode. The control terminal covers portions of the first main electrode provided on the first semiconductor region, on the second semiconductor region, and on the control electrode, respectively, and the extraction electrode, is electrically connected to the plurality of contact electrodes, and is electrically insulated from the first main electrode by the second insulating film.
摘要翻译：根据一个实施例，半导体器件包括第一主电极，控制电极，引出电极，第二绝缘膜，多个接触电极和控制端子。第一主电极电连接到第一导电类型的第一半导体区域和选择性地设置在第一半导体区域的表面上的第二导电类型的第二半导体区域。控制电极经由第一绝缘膜设置在第一半导体区域上。引出电极与控制电极电连接。第二绝缘膜设置在第一主电极和引出电极上。多个接触电极设置在形成在第二绝缘膜中的多个第一接触孔的内部，并与引出电极电连接。控制端子分别覆盖设置在第一半导体区域上，第二半导体区域上和控制电极上的第一主电极的部分，并且引出电极电连接到多个接触电极，并且是电绝缘的从第一主电极通过第二绝缘膜。

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