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71. 发明授权

US06305876B1 Material and construction method of prevention of scour for the underwater structure 有权
标题翻译：防止水下结构冲刷的材料和施工方法
公开(公告)号：US06305876B1
公开(公告)日：2001-10-23
申请号：US09182501
申请日：1998-10-30
申请人： Masato Yoshino , Yoshikazu Ishikawa , Kazuo Oyama , Sukeo Tamura , Takahito Okubo , Saiji Nozaki , Toshihiro Tanaka
发明人： Masato Yoshino , Yoshikazu Ishikawa , Kazuo Oyama , Sukeo Tamura , Takahito Okubo , Saiji Nozaki , Toshihiro Tanaka
IPC分类号： E02B304
CPC分类号： E02B17/0017 , Y10T428/1362
摘要： A net includes a bag body, an endless suspension rope, and a top closing rope. The bag body prevents scour of an underwater structure, and is formed into a mesh by a knitted fabric. The endless suspension rope is inserted through the mesh adjacent to an opening portion of the bag body. The top closing rope closes the opening of the bag body, and is inserted through a mesh adjacent to the mesh through which the suspension rope is inserted.
摘要翻译：网包括一个袋体，一个无尽的悬挂绳索和一个顶部关闭的绳索。袋体防止水下结构的冲刷，并且通过针织物形成网状。无端悬挂绳索通过邻近袋体的开口部分的网状物插入。顶部关闭绳关闭袋体的开口，并且通过邻近网状物的网状物插入悬挂绳索插入其中。

72. 发明授权

US06272042B1 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US06272042B1
公开(公告)日：2001-08-07
申请号：US09630426
申请日：2000-08-01
申请人： Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
发明人： Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
IPC分类号： G11C1604
CPC分类号： G11C16/0416 , G11C8/08 , G11C16/10 , G11C16/12 , G11C16/16 , G11C16/34 , G11C16/3418 , G11C16/3427 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/7883 , H01L29/7885
摘要： Each memory cell of a nonvolatile semiconductor memory, essentially, consists of a one-transistor type memory cell such as a MOSFET having a floating gate electrode. When an electric programming operation is carried out, a positive voltage is applied to an n type drain region, a negative voltage is applied to a control gate and a source region is grounded. When an erasing operation is carried out, the positive voltage is applied to the control gate while all the other electrodes and a semiconductor substrate are grounded. Low power consumption can be accomplished because both of the programming operation and erasing operations are carried out by utilizing a tunneling mechanism. Furthermore, because the negative voltage applied to the word line, a drain voltage at the time of programming of data can be lowered, so that degradation of a gate oxide film at a channel portion can be mitigated.
摘要翻译：非易失性半导体存储器的每个存储单元基本上由诸如具有浮置栅电极的MOSFET的单晶体管型存储单元组成。当执行电编程操作时，向n型漏极区域施加正电压，向控制栅极施加负电压，并且源极区域接地。当执行擦除操作时，正电压被施加到控制栅极，而所有其它电极和半导体衬底接地。可以实现低功耗，因为通过利用隧道机制来执行编程操作和擦除操作两者。此外，由于施加到字线的负电压，可以降低数据编程时的漏极电压，从而可以减轻沟道部分处的栅极氧化膜的劣化。

73. 发明授权

US5978270A Semiconductor non-volatile memory device and computer system using the same 失效
标题翻译：半导体非易失性存储器件和使用其的计算机系统
公开(公告)号：US5978270A
公开(公告)日：1999-11-02
申请号：US29748
申请日：1998-03-02
申请人： Toshihiro Tanaka , Masataka Kato , Osamu Tsuchiya , Toshiaki Nishimoto
发明人： Toshihiro Tanaka , Masataka Kato , Osamu Tsuchiya , Toshiaki Nishimoto
IPC分类号： G11C16/04 , G11C16/28 , G11C16/34 , G11C16/06
CPC分类号： G11C16/3413 , G11C16/0416 , G11C16/28 , G11C16/3404 , G11C16/3409 , G11C16/3459
摘要： After decreasing the threshold voltages of a plurality of memory cells collectively or selectively, the presence or absence of any memory cell of which the threshold voltage has dropped below a predetermined voltage verified collectively for each of memory cell groups connected to word line (low-threshold value verification), and any memory cell of which the threshold voltage has excessively dropped is selectively written. Also, the well of each of memory cell is formed in the region of an element isolation layer for isolating it from the substrate of a memory apparatus, and a negative voltage is supplied to the memory well distributively with a positive voltage applied as a word line voltage, thus supplying them as erase operation voltages. The absolute value of the memory well voltage is set substantially equal to or lower than the word line voltage for the read operation. Sectors constituting each memory mat includes a sector (selected sector) selected for the erase operation with each word line thereof supplied with a positive voltage, a sector (non-selected sector) not selected for the erase operation with a word line voltage different from a memory well voltage, and further a sector (completely non-selected sector) not selected for the erase operation with a word line voltage equal to the voltage between a source and a drain of the memory cell.
摘要翻译： PCT No.PCT / JP96 / 02419 Sec。 371日期1998年3月2日 102（e）1998年3月2日PCT PCT 1996年8月29日PCT公布。公开号WO97 / 08707 日期1997年3月6日在集体或选择性地降低多个存储器单元的阈值电压之后，存在或不存在阈值电压已经下降到预定电压以下的任何存储单元，该存储单元对于连接到字的每个存储单元组线路（低阈值验证），并且选择性地写入阈值电压过度下降的任何存储单元。此外，存储单元的阱形成在用于将其与存储装置的基板隔离的元件隔离层的区域中，并且以施加作为字线的正电压将负电压分配地提供给存储器电压，从而将其提供为擦除操作电压。存储器阱电压的绝对值被设定为基本上等于或低于读取操作的字线电压。构成每个存储器垫的扇区包括为其擦除操作选择的扇区（选择的扇区），其每个字线被提供有正电压，未被选择用于擦除操作的扇区（未选择的扇区），字线电压不同于存储器阱电压，以及未被选择用于具有等于存储器单元的源极和漏极之间的电压的字线电压的擦除操作的扇区（完全未选择的扇区）。

74. 发明授权

US5796348A Overload protection device 失效
标题翻译：过载保护装置
公开(公告)号：US5796348A
公开(公告)日：1998-08-18
申请号：US759621
申请日：1996-12-05
申请人： Toshihiro Tanaka
发明人： Toshihiro Tanaka
IPC分类号： E21F17/18 , G01D1/18 , G01L1/02 , G08B21/00
CPC分类号： G01D1/18 , E21F17/185 , G01L1/02
摘要： This invention provides an overload protection device wherein a dangerous situation warning is given to workers in architectural construction when a load value imposed on a temporary column reaches a preset value. The device comprises a load pedestal above and a base pedestal below, a load detecting equipment which detects the load value on the load pedestal after converting the load value into a hydraulic pressure value, a pressure detecting equipment which operates when the pressure reaches the preset value, and a notice equipment which informs workers that the load value imposed on the temporary column has reached the preset value.
摘要翻译：本发明提供了一种过载保护装置，其中当施加在临时列上的负载值达到预设值时，对建筑施工中的工人进行危险情况警告。该装置包括下方的负载基座和下方的基座;负载检测装置，其将负载值转换为液压值后检测负载基座上的负载值;压力检测装置，其在压力达到预设值时动作以及通知工作人员施加在临时列上的载荷值已达到预设值的通知设备。

75. 发明授权

US5151385A Method of manufacturing a metallic silicide transparent electrode 失效
标题翻译：制造金属硅氧烷透明电极的方法
公开(公告)号：US5151385A
公开(公告)日：1992-09-29
申请号：US252144
申请日：1988-10-03
申请人： Hideaki Yamamoto , Koichi Seki , Toshihiro Tanaka , Akira Sasano , Toshihisa Tsukada , Yasuharu Shimomoto , Toshio Nakano , Hideto Kanamori
发明人： Hideaki Yamamoto , Koichi Seki , Toshihiro Tanaka , Akira Sasano , Toshihisa Tsukada , Yasuharu Shimomoto , Toshio Nakano , Hideto Kanamori
IPC分类号： H01L31/10 , H01L27/14 , H01L31/0216 , H01L31/0224 , H01L31/04 , H01L31/18 , H01L31/20
CPC分类号： H01L31/022466 , H01L24/24 , H01L31/02164 , H01L31/1884 , H01L31/202 , H01L2924/12032 , H01L2924/12043 , Y02E10/50 , Y02P70/521 , Y10S148/147
摘要： A semiconductor device such as a solar cell, photodiode and solid state imaging device comprises a semiconductor layer made of amorphous silicon formed on a given substrate, and a transparent conductive layer formed by an interfacial reaction between the amorphous silicon and a metallic film directly formed on the amorphous silicon. This transparent conductive layer is used as a transparent electrode of the device and if necessary the remainder after having partially removed the metallic film for the transparent conductive layer is used as a conductive layer and light shielding film.

76. 发明授权

US09404199B2 Polyurethane elastic yarn and method for producing same 有权
标题翻译：聚氨酯弹性纱线及其制造方法
公开(公告)号：US09404199B2
公开(公告)日：2016-08-02
申请号：US13515949
申请日：2010-12-16
申请人： Toshihiro Tanaka , Masashi Hara
发明人： Toshihiro Tanaka , Masashi Hara
IPC分类号： C08L75/04 , C08K5/3475 , D01F1/10 , D01F6/70
CPC分类号： D01F1/106 , D01F6/70
摘要： ProblemTo provide a polyurethane elastic yarn with excellent elongation, recoverability, and light resistance that is suitable for use in stretchable fabrics and clothing, and to provide a method for manufacture thereof.Resolution MeansInclude a benzotriazole ultraviolet absorber containing one or more unsaturated bond in the molecule when manufacturing elastic yarn made of polyurethane with a polymeric diol and diisocyanate as starting material.
摘要翻译：问题提供一种适用于伸缩性织物和衣物的优异伸长率，可回复性和耐光性的聚氨酯弹性丝，并提供其制造方法。分解方法当制备由聚氨酯制成的弹性纱线和二异氰酸酯作为原料时，在分子中含有一个含有一个或多个不饱和键的苯并三唑紫外线吸收剂。

77. 发明授权

US09228569B2 Method for constructing a foundation for a wind power generation system 有权
标题翻译：构建风力发电系统基础的方法
公开(公告)号：US09228569B2
公开(公告)日：2016-01-05
申请号：US12979596
申请日：2010-12-28
申请人： Takahito Ohkubo , Toshihiro Tanaka , Nobuyoshi Oike , Hironori Kawamura , Shinichi Tanaka , Ikuo Moriyama , Motoo Yoshioka
发明人： Takahito Ohkubo , Toshihiro Tanaka , Nobuyoshi Oike , Hironori Kawamura , Shinichi Tanaka , Ikuo Moriyama , Motoo Yoshioka
IPC分类号： E02D5/54 , F03D11/04 , E02B17/00
CPC分类号： F03D11/045 , E02B2017/0091 , F03D13/22 , F05B2240/95 , Y02E10/727
摘要： The condition of a seabed 200 and the condition of tidal currents near the seabed 200 are investigated in advance to examine the number of filter units (FUs) 50 and the position where the FUs 50 are to be installed. Then, piles 12b as a base of a foundation are provided so as to be supported by a bearing layer. A plurality of FUs 50 are installed in close contact with each other between the seabed 200 and each pile 12b. Then, a formwork 12e for a base slab portion 12a is installed on the upper ends of the piles 12b. Concrete is placed in the formwork 12e to form the base slab portion 12a. Then, a tower 11 is fixed to the upper end of the base slab portion 12a.
摘要翻译：事先调查海底200的状况和海底200附近的潮汐状况，以检查过滤器单元（FU）50的数量和安装FU 50的位置。然后，将作为基础的基部的桩12b设置成由轴承层支承。在海床200和每个桩12b之间彼此紧密接触地设置多个F 50。然后，在桩12b的上端部安装基板部12a的模板12e。将混凝土放置在模板12e中以形成基板部分12a。然后，塔11固定在基板部12a的上端。

78. 发明授权

US08482961B2 Semiconductor device and its manufacturing method 失效
公开(公告)号：US08482961B2
公开(公告)日：2013-07-09
申请号：US13456195
申请日：2012-04-25
申请人： Satoru Hanzawa , Fumihiko Nitta , Nozomu Matsuzaki , Toshihiro Tanaka
发明人： Satoru Hanzawa , Fumihiko Nitta , Nozomu Matsuzaki , Toshihiro Tanaka
IPC分类号： G11C11/00
CPC分类号： G11C5/06 , G11C13/0004 , G11C13/003 , G11C13/0069 , G11C2213/74 , G11C2213/79 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： In a semiconductor device including a memory cell array formed of memory cells using a storage element by a variable resistor and a select transistor, a buffer cell is arranged between a sense amplifier and the memory cell array and between a word driver and the memory cell array. The resistive storage element in the memory cell is connected to a bit-line via a contact formed above the resistive storage element. Meanwhile, in the buffer cell, the contact is not formed above the resistive storage element, and a state of being covered with an insulator is kept upon processing the contact in the memory cell. By such a processing method, exposure and sublimation of a chalcogenide film used in the resistive storage element can be avoided.

79. 发明授权

US08277941B2 Elastic polyurethane yarn and method of manufacturing the same 有权
标题翻译：弹性聚氨酯纱线及其制造方法
公开(公告)号：US08277941B2
公开(公告)日：2012-10-02
申请号：US12087104
申请日：2006-12-26
申请人： Toshihiro Tanaka , Masashi Hara , Tatsuaki Kanbayashi
发明人： Toshihiro Tanaka , Masashi Hara , Tatsuaki Kanbayashi
IPC分类号： D02G3/00 , D03D15/00
CPC分类号： D01F6/70 , D01F1/07 , Y10T428/2913 , Y10T442/3976 , Y10T442/3984 , Y10T442/40
摘要： The present invention provides elastic polyurethane yarns which possess excellent elongation, recoverability, heat resistance and chemical resistance, as well as a method of manufacturing the same. The elastic polyurethane yarns comprise a polyurethane being composed mainly of a polymeric diol and a diisocyanate, and contains through incorporation a compound having within the molecule a phosphorus-nitrogen interatomic bond(s). The process can produce the elastic polyurethane yarns by adding to a solution of the polyurethane a compound having within the molecule a phosphorus-nitrogen interatomic bond(s), followed by spinning.
摘要翻译：本发明提供具有优异的伸长率，可回复性，耐热性和耐化学性的弹性聚氨酯纱线及其制造方法。弹性聚氨酯纱线包括主要由聚合二醇和二异氰酸酯组成的聚氨酯，并且通过掺入在分子内具有磷 - 氮原子间键的化合物。该方法可以通过向聚氨酯的溶液中加入在分子内具有磷 - 氮原子间键的化合物，然后纺丝来生产弹性聚氨酯纱线。

80. 发明授权

US08138136B2 Process for production of alkylene oxide adducts 有权
标题翻译：烯化氧加合物的生产方法
公开(公告)号：US08138136B2
公开(公告)日：2012-03-20
申请号：US12514465
申请日：2007-10-29
申请人： Yasuki Ohtawa , Toshihiro Tanaka , Kaoru Ohmae
发明人： Yasuki Ohtawa , Toshihiro Tanaka , Kaoru Ohmae
IPC分类号： C11D1/22
CPC分类号： C07C41/03 , C07C41/44 , C07C43/13
摘要： The present invention relates to a process for producing an alkyleneoxide adduct, including the steps of reacting an aliphatic alcohol containing a hydrocarbon group having 6 to 22 carbon atoms with an alkyleneoxide in the presence of a catalyst to obtain a reaction product containing an alkyleneoxide adduct; and subjecting the reaction product successively to acid treatment and reduction treatment, and an alkyleneoxide adduct having a carbonyl value of 5 μmol/g or less. The alkyleneoxide adduct is useful as a raw material of various anionic surfactants, and the anionic surfactants derived from the alkyleneoxide adduct are free from undesirable coloration.
摘要翻译：本发明涉及一种生产环氧烷烃加合物的方法，包括在催化剂存在下使含有6-22个碳原子的烃基的脂族醇与环氧烷反应的步骤，得到含有环氧烷烃加成物的反应产物; 并对反应产物进行酸处理和还原处理，以及羰基值为5μmol/ g以下的环氧烷烃加合物。环氧烷烃加合物可用作各种阴离子表面活性剂的原料，衍生自环氧烷烃加合物的阴离子表面活性剂没有不希望的着色。

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