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71. 发明授权

US08084375B2 Hot edge ring with sloped upper surface 有权
标题翻译：热边缘带有倾斜的上表面
公开(公告)号：US08084375B2
公开(公告)日：2011-12-27
申请号：US12917969
申请日：2010-11-02
申请人： Akira Koshiishi , Sathya Mani , Gautam Bhattacharyya , Gregory R. Bettencourt , Sandy Chao
发明人： Akira Koshiishi , Sathya Mani , Gautam Bhattacharyya , Gregory R. Bettencourt , Sandy Chao
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01J37/20 , H01J37/317 , H01J37/32091 , H01J37/32623 , H01J2237/2001
摘要： A hot edge ring with extended lifetime comprises an annular body having a sloped upper surface. The hot edge ring includes a step underlying an outer edge of a semiconductor substrate supported in a plasma processing chamber wherein plasma is used to process the substrate. The step includes a vertical surface which surrounds the outer edge of the substrate and the sloped upper surface extends upwardly and outwardly from the upper periphery of the vertical surface.
摘要翻译：具有延长寿命的热边缘环包括具有倾斜的上表面的环形体。热边缘环包括支撑在等离子体处理室中的半导体衬底的外边缘下方的阶梯，其中使用等离子体来处理衬底。该步骤包括围绕基板的外边缘的垂直表面，并且倾斜的上表面从垂直表面的上周向上和向外延伸。

72. 发明授权

US08080126B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08080126B2
公开(公告)日：2011-12-20
申请号：US12195842
申请日：2008-08-21
申请人： Akira Koshiishi , Keizo Hirose
发明人： Akira Koshiishi , Keizo Hirose
IPC分类号： H01L21/00
CPC分类号： H01J37/3255 , H01J37/32082 , H01J37/321 , H01J37/32165 , H01J2237/3323
摘要： In the plasma processing apparatus of the present invention, a first electrode for connecting a high frequency electric power source in a chamber is arranged to be opposed to a second electrode. A substrate (W) to be processed is placed between the electrodes. There is provided a harmonic absorbing member for being able to absorb harmonics of the high frequency electric power source so as to come in contact with a peripheral portion or circumference of a face of the first electrode 21, which is opposite the second electrode. The harmonic absorbing member absorbs the reflected harmonic before the harmonic returns to the high frequency electric power source. By absorbing the harmonic in this manner, the standing wave due to the harmonic will be effectively prevented from being generated, and the density of plasma is made even.
摘要翻译：在本发明的等离子体处理装置中，在室内连接高频电源的第一电极配置成与第二电极相对。将待处理的基板（W）放置在电极之间。提供了一种能够吸收高频电源的谐波的谐波吸收构件，以便与第二电极相对的第一电极21的面的周边部分或周边接触。谐波吸收构件在谐波返回到高频电源之前吸收反射谐波。通过以这种方式吸收谐波，将有效地防止由于谐波引起的驻波而产生等离子体的密度。

73. 发明授权

US07993489B2 Capacitive coupling plasma processing apparatus and method for using the same 有权
标题翻译：电容耦合等离子体处理装置及其使用方法
公开(公告)号：US07993489B2
公开(公告)日：2011-08-09
申请号：US11393673
申请日：2006-03-31
申请人： Naoki Matsumoto , Chishio Koshimizu , Akira Koshiishi
发明人： Naoki Matsumoto , Chishio Koshimizu , Akira Koshiishi
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00 , H05B31/26
CPC分类号： H01L21/67069 , C23F4/00 , H01J37/32082 , H01J37/3244 , H01J37/32532 , H01J2237/334
摘要： A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.
摘要翻译：等离子体处理装置包括被配置为容纳目标基板并被抽真空的处理容器。第一电极和第二电极在处理容器内彼此相对设置。第一电极包括外部部分和面向第二电极的内部部分，使得外部部分围绕内部部分。 RF电源被配置为向第一电极的外部施加RF功率。 DC电源被配置为向第一电极的内部施加DC电压。处理气体供应单元被配置为将处理气体供应到处理容器中，其中处理气体的等离子体在第一电极和第二电极之间产生。

74. 发明授权

US07951262B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US07951262B2
公开(公告)日：2011-05-31
申请号：US11156561
申请日：2005-06-21
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32697 , H01J37/32706 , H01J2237/334 , H01L21/3065
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。

75. 发明授权

US07506610B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US07506610B2
公开(公告)日：2009-03-24
申请号：US11137516
申请日：2005-05-26
申请人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
发明人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32577 , H01J37/32082 , H01J37/32174 , H01L21/31116
摘要： A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.
摘要翻译：一种等离子体处理装置，包括被配置为在其中具有真空气氛的处理容器。上电极被设置为面对放置在处理容器内的目标衬底。电动给料器包括在环形方向上连续地连接到上电极的第一圆柱形导电构件。电馈送器被配置为将第一RF电源的第一RF输出提供给上电极。

76. 发明申请

US20080135519A1 PLASMA PROCESSING APPARATUS AND CONTROL METHOD THEREOF 有权
标题翻译：等离子体处理装置及其控制方法
公开(公告)号：US20080135519A1
公开(公告)日：2008-06-12
申请号：US12031531
申请日：2008-02-14
申请人： Akira Koshiishi , Masatoshi Kitano
发明人： Akira Koshiishi , Masatoshi Kitano
IPC分类号： G05F1/10 , C23F1/02
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32935 , H05H1/46 , Y10S438/905
摘要： In a plasma processing apparatus for processing an object to be processed by generating plasma in a processing chamber: a first electrode is arranged in the processing chamber and a second electrode is arranged to face the first electrode in the processing chamber; a first and a second power systems include a first and a second power supplies for supplying a first and a second powers to the first and the second electrodes, respectively; and a control unit controls both or either one of the first and the second power systems so as to apply a preprocessing voltage to the second electrode for a time period before plasma processing is performed on the object.
摘要翻译：一种等离子体处理装置，用于通过在处理室中产生等离子体来处理待加工物体;第一电极布置在处理室中，第二电极布置成与处理室中的第一电极相对; 第一和第二电力系统包括用于分别向第一和第二电极提供第一和第二电力的第一和第二电源; 并且控制单元控制第一和第二电力系统中的任一个或任何一个，以便在对物体进行等离子体处理之前的一段时间内对第二电极施加预处理电压。

77. 发明申请

US20080038926A1 Method of treating a mask layer prior to performing an etching process 有权
公开(公告)号：US20080038926A1
公开(公告)日：2008-02-14
申请号：US11499678
申请日：2006-08-07
申请人： Peter L.G. Ventzek , Lee Chen , Akira Koshiishi , Ikuo Sawada
发明人： Peter L.G. Ventzek , Lee Chen , Akira Koshiishi , Ikuo Sawada
IPC分类号： H05H1/24 , B05D5/00 , H01L21/461 , H01L21/302
CPC分类号： H05H1/44 , B05D1/32 , B05D1/62 , B05D3/145 , H01J37/32027 , H01J37/32036 , H01J37/32082 , H01L21/0273 , H01L21/0337 , H01L21/31116 , H01L21/31144 , H01L21/76802
摘要： A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with a hydrocarbon chemistry or hydrofluorocarbon chemistry or fluorocarbon chemistry or combination of two or more thereof prior to proceeding with the etching process.

78. 发明申请

US20070215279A1 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD, FOCUS RING, AND FOCUS RING COMPONENT 有权
标题翻译：等离子体加工设备，等离子体处理方法，聚焦环和聚焦环组分
公开(公告)号：US20070215279A1
公开(公告)日：2007-09-20
申请号：US11685308
申请日：2007-03-13
申请人： Akira Koshiishi
发明人： Akira Koshiishi
IPC分类号： C23F1/00 , H01L21/302
CPC分类号： H01J37/32642 , H01J37/32623
摘要： When a substrate to be processed placed on a mounting table disposed in a process chamber is processed by plasma generated in the process chamber by application of high-frequency voltage, an electric field causing ions generated by the plasma to accelerate toward a lower surface of a peripheral edge portion of the substrate to be processed placed on the mounting table is formed under the peripheral edge portion of the substrate to be processed, and the ions consequently collide with the lower surface of the peripheral edge portion, which reduces the occurrence of deposition.
摘要翻译：当通过施加高频电压处理放置在处理室中的安装台上的待处理基板被处理室中产生的等离子体处理时，引起由等离子体产生的离子的电场朝向被处理基板的周缘部形成在被处理基板的周缘部的下方，因此离子与周缘部的下表面碰撞，减少了沉积的发生。

79. 发明申请

US20060037703A1 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US20060037703A1
公开(公告)日：2006-02-23
申请号：US11156561
申请日：2005-06-21
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： C23F1/00
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32697 , H01J37/32706 , H01J2237/334 , H01L21/3065
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。

80. 发明申请

US20050005859A1 Ring mechanism, and plasma processing device using the ring mechanism 有权
标题翻译：环形机构，以及使用环形机构的等离子体处理装置
公开(公告)号：US20050005859A1
公开(公告)日：2005-01-13
申请号：US10498478
申请日：2002-12-12
申请人： Akira Koshiishi , Mitsuru Hashimoto , Hideaki Tanaka , Shigeru Tahara , Kunihiko Hinata , Jun Ooyabu
发明人： Akira Koshiishi , Mitsuru Hashimoto , Hideaki Tanaka , Shigeru Tahara , Kunihiko Hinata , Jun Ooyabu
IPC分类号： H01J37/32 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67069 , H01J37/32642 , Y10S156/915
摘要： A ring mechanism, comprising a focus ring and divided cover rings surrounding a wafer W placed on a loading table (lower electrode) mounted in a processing chamber, wherein a ring-shaped clearance δ1 is provided between the divided rings to spread plasma to the radial outside of the focus ring to allow plasma to get therein, whereby a potential difference between the wafer W and the focus ring can be eliminated to prevent arc discharge by plasma from occurring between the wafer W and the focus ring.
摘要翻译：环形机构，包括聚焦环和围绕放置在安装在处理室中的装载台（下电极）上的晶片W）的分隔盖环，其中环形间隙δ1设置在分隔环之间以将等离子体扩散到径向在聚焦环外部允许等离子体进入其中，由此可以消除晶片W和聚焦环之间的电位差，以防止在晶片W和聚焦环之间发生等离子体的电弧放电。

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