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71. 发明授权

US08391256B2 RF port for multiple wireless local area networks 有权
标题翻译： RF端口用于多个无线局域网
公开(公告)号：US08391256B2
公开(公告)日：2013-03-05
申请号：US11622074
申请日：2007-01-11
申请人： Robert Beach
发明人： Robert Beach
IPC分类号： H04W4/00
CPC分类号： H04W84/12 , H04L12/4625 , H04L29/04 , H04L69/08 , H04L69/18 , H04W12/02 , H04W12/06 , H04W60/00 , H04W74/00 , H04W84/18
摘要： A wireless local area network is provided with simplified RF ports which are configured to provide lower level media access control functions. Higher level media access control functions are provided in a cell controller, which may service one or more RF ports that are capable operating with at least two wireless local area subnetworks. Mobile units can also be configured with the higher level media access control functions being performed in a host processor.
摘要翻译：无线局域网提供有简化的RF端口，其被配置为提供较低级媒体访问控制功能。在单元控制器中提供了更高级别的媒体访问控制功能，其可以服务能够使用至少两个无线局域网子网络操作的一个或多个RF端口。移动单元还可以配置在主处理器中执行的更高级媒体访问控制功能。

72. 发明授权

US08168000B2 III-nitride semiconductor device fabrication 有权
标题翻译： III族氮化物半导体器件制造
公开(公告)号：US08168000B2
公开(公告)日：2012-05-01
申请号：US11452547
申请日：2006-06-14
申请人： Mike Briere , Robert Beach
发明人： Mike Briere , Robert Beach
IPC分类号： C30B25/04
CPC分类号： C30B23/04 , C30B25/04 , C30B29/403
摘要： A method of fabricating a III-nitride power semiconductor device which includes selective prevention of the growth of III-nitride semiconductor bodies to selected areas on a substrate in order to reduce stresses and prevent cracking.
摘要翻译：一种制造III族氮化物功率半导体器件的方法，其包括选择性地防止III族氮化物半导体器件在衬底上的选定区域的生长，以便减少应力并防止开裂。

73. 发明申请

US20110244671A1 Method for Fabricating a III-Nitride Semiconductor Device 有权
标题翻译： III型氮化物半导体器件的制造方法
公开(公告)号：US20110244671A1
公开(公告)日：2011-10-06
申请号：US13159741
申请日：2011-06-14
申请人： Robert Beach , Zhi He , Jianjun Cao
发明人： Robert Beach , Zhi He , Jianjun Cao
IPC分类号： H01L21/283
CPC分类号： H01L29/2003 , H01L21/02458 , H01L21/0254 , H01L21/28581 , H01L29/205 , H01L29/401 , H01L29/4916 , H01L29/495 , H01L29/4966 , H01L29/772 , H01L29/7786 , H01L29/7787
摘要： A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.
摘要翻译：一种III族氮化物半导体器件，其包括在栅极电极和栅极电介质之间的势垒体。

74. 发明授权

US07892938B2 Structure and method for III-nitride monolithic power IC 有权
标题翻译： III族氮化物单片电源IC的结构和方法
公开(公告)号：US07892938B2
公开(公告)日：2011-02-22
申请号：US11507709
申请日：2006-08-22
申请人： Robert Beach , Paul Bridger
发明人： Robert Beach , Paul Bridger
IPC分类号： H01L21/76
CPC分类号： H01L29/66462 , H01L21/76 , H01L21/7605 , H01L21/76264 , H01L21/76289 , H01L29/2003 , Y10S438/93
摘要： III-nitride materials are used to form isolation structures in high voltage ICs to isolate low voltage and high voltage functions on a monolithic power IC. Critical performance parameters are improved using III-nitride materials, due to the improved breakdown performance and thermal performance available in III-nitride semiconductor materials. An isolation structure may include a dielectric layer that is epitaxially grown using a III-nitride material to provide a simplified manufacturing process. The process permits the use of planar manufacturing technology to avoid additional manufacturing costs. High voltage power ICs have improved performance in a smaller package in comparison to corresponding silicon structures.
摘要翻译： III族氮化物材料用于在高电压IC中形成隔离结构，以隔离单片电源IC上的低电压和高电压功能。由于III族氮化物半导体材料的击穿性能和热性能的改善，使用III族氮化物材料改善了关键性能参数。隔离结构可以包括使用III族氮化物材料外延生长以提供简化的制造工艺的电介质层。该过程允许使用平面制造技术来避免额外的制造成本。与相应的硅结构相比，高压功率IC在较小的封装中具有改进的性能。

75. 发明申请

US20110014500A1 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application 有权
标题翻译：用于制造自旋转矩（STT）-RAM应用的高性能MTJ装置的结构和方法
公开(公告)号：US20110014500A1
公开(公告)日：2011-01-20
申请号：US12460412
申请日：2009-07-17
申请人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
发明人： Cheng T. Horng , Ru-Ying Tong , Guangli Liu , Robert Beach , Witold Kula , Tai Min
IPC分类号： G11B5/706 , C23C14/34 , B44C1/22
CPC分类号： H01L43/12 , B82Y25/00 , C23C14/3414 , G11C11/16 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation and containing an oxygen surfactant layer to form a more uniform MgO layer and lower breakdown distribution percent. A CoFeB/NCC/CoFeB composite free layer with a middle nanocurrent channel layer minimizes Jc0 while enabling thermal stability, write voltage, read voltage, and Hc values that satisfy 64 Mb design requirements. The NCC layer has RM grains in an insulator matrix where R is Co, Fe, or Ni, and M is a metal such as Si or Al. NCC thickness is maintained around the minimum RM grain size to avoid RM granules not having sufficient diameter to bridge the distance between upper and lower CoFeB layers. A second NCC layer and third CoFeB layer may be included in the free layer or a second NCC layer may be inserted below the Ru capping layer.
摘要翻译：公开了一种STT-RAM MTJ，其具有通过自然氧化形成的MgO隧道势垒，并含有氧表面活性剂层以形成更均匀的MgO层和较低的击穿分布百分比。具有中等纳米通道层的CoFeB / NCC / CoFeB复合自由层使Jc0最小化，同时实现满足64Mb设计要求的热稳定性，写电压，读电压和Hc值。 NCC层在绝缘体基体中具有RM颗粒，其中R是Co，Fe或Ni，M是诸如Si或Al的金属。 NCC厚度保持在最小RM晶粒尺寸周围，以避免RM颗粒不具有足够的直径以桥接上部和下部CoFeB层之间的距离。可以在自由层中包括第二NCC层和第三CoFeB层，或者可以将第二NCC层插入Ru覆盖层的下方。

76. 发明申请

US20100258912A1 DOPANT DIFFUSION MODULATION IN GaN BUFFER LAYERS 有权
标题翻译： GaN缓冲层中的掺杂扩散调制
公开(公告)号：US20100258912A1
公开(公告)日：2010-10-14
申请号：US12756063
申请日：2010-04-07
申请人： Robert Beach , Guang Yuan Zhao
发明人： Robert Beach , Guang Yuan Zhao
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/02579 , H01L21/0237 , H01L21/02439 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/205 , H01L29/207 , H01L29/452 , H01L29/66462 , H01L29/7783
摘要： A semi-conductor crystal and method of forming the same. The method includes providing a flow of dopant and column III element containing gases, then stopping flow of dopant and column III element containing gases, reducing the temperature, restarting flow of column III containing gases and then elevating the temperature.
摘要翻译：半导体晶体及其形成方法。该方法包括提供含有气体的掺杂剂和含有III族元素的气流，然后停止含掺杂剂和含有III族元素的气体的流动，降低温度，重新开始含有气体的第III族气体的流动，然后升高温度。

77. 发明申请

US20100258848A1 COMPENSATED GATE MISFET AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：补偿栅极MISFET及其制造方法
公开(公告)号：US20100258848A1
公开(公告)日：2010-10-14
申请号：US12756906
申请日：2010-04-08
申请人： Alexander Lidow , Robert Beach , Jianjun Cao , Alana Nakata , Guang Yuan Zhao
发明人： Alexander Lidow , Robert Beach , Jianjun Cao , Alana Nakata , Guang Yuan Zhao
IPC分类号： H01L29/78 , H01L29/772
CPC分类号： H01L29/802 , H01L29/2003 , H01L29/66522
摘要： A MISFET, such as a GaN transistor, with low gate leakage. In one embodiment, the gate leakage is reduced with a compensated GaN layer below the gate contact and above the barrier layer. In another embodiment, the gate leakage is reduced by employing a semi-insulating layer below the gate contact and above the barrier layer.
摘要翻译：具有低栅极泄漏的MISFET，例如GaN晶体管。在一个实施例中，栅极泄漏随着栅极接触下方的补偿GaN层和势垒层上方而减小。在另一个实施例中，通过在栅极接触之下和阻挡层之上采用半绝缘层来减小栅极泄漏。

78. 发明申请

US20100258844A1 BUMPED, SELF-ISOLATED GaN TRANSISTOR CHIP WITH ELECTRICALLY ISOLATED BACK SURFACE 有权
标题翻译：具有电隔离背表面的自分离的GaN晶体管芯片
公开(公告)号：US20100258844A1
公开(公告)日：2010-10-14
申请号：US12756975
申请日：2010-04-08
申请人： Alexander Lidow , Robert Beach , Alana Nakata , Jianjun Cao
发明人： Alexander Lidow , Robert Beach , Alana Nakata , Jianjun Cao
IPC分类号： H01L29/772 , H01L23/367 , H01L23/488
CPC分类号： H01L23/3192 , H01L23/3178 , H01L23/367 , H01L23/3672 , H01L24/13 , H01L24/16 , H01L29/0657 , H01L29/205 , H01L29/267 , H01L29/41725 , H01L29/7787 , H01L2224/05001 , H01L2224/05022 , H01L2224/05572 , H01L2224/73253 , H01L2924/00014 , H01L2924/10253 , H01L2224/05599 , H01L2224/05099
摘要： A semiconductor device comprising a silicon substrate, a compound semiconductor material, an insulating material between the silicon substrate and the compound semiconductor material, and a top surface comprising means of electrical connection, and passivation material, where the passivation material is silicon nitride, silicon dioxide, or a combination of both. The present invention eliminates the need for a thick electrical insulator between a heat sink and the back surface of a surface mounted device by the inclusion of an AlN seed layer to electrically isolate the silicon substrate of the device. The sidewalls of the device are also electrically isolated from the active area of the device.
摘要翻译：一种半导体器件，包括硅衬底，化合物半导体材料，硅衬底和化合物半导体材料之间的绝缘材料，以及包括电连接装置的顶表面和钝化材料，其中钝化材料是氮化硅，二氧化硅，或两者的组合。本发明通过包含AlN晶种层来电绝缘器件的硅衬底，消除了散热器与表面安装器件背面之间的厚电绝缘体的需要。器件的侧壁也与器件的有源区域电隔离。

79. 发明授权

US07653033B2 Infrastructure for wireless LANs 有权
标题翻译：无线局域网的基础设施
公开(公告)号：US07653033B2
公开(公告)日：2010-01-26
申请号：US10784588
申请日：2004-02-23
申请人： Robert Beach , Heiner Schwede
发明人： Robert Beach , Heiner Schwede
IPC分类号： H04Q7/24 , H04L12/28
CPC分类号： H04W8/26 , H04L12/4625 , H04W52/0203 , H04W52/0216 , H04W84/12 , H04W88/08 , Y02D70/142
摘要： A wireless data communications system includes simplified access points which are connected to ports of an intelligent switching hub. The switching hub relays data packets to the access points in accordance with destination address data in the data communications. In a preferred arrangement the access points are provided with power over the data cable from the switching hub location.
摘要翻译：无线数据通信系统包括连接到智能交换集线器端口的简化接入点。交换集线器根据数据通信中的目的地址数据将数据分组中继到接入点。在优选的布置中，接入点通过数据电缆从交换集线器位置提供电力。

80. 发明授权

US07652311B2 III-nitride device with reduced piezoelectric polarization 有权
标题翻译：具有降低的压电极化的III族氮化物器件
公开(公告)号：US07652311B2
公开(公告)日：2010-01-26
申请号：US11906823
申请日：2007-10-04
申请人： Robert Beach
发明人： Robert Beach
IPC分类号： H01L29/739 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/06 , H01L29/22 , H01L33/00
CPC分类号： H01L29/7787 , H01L29/2003
摘要： A III-nitride based field effect transistor obtains improved performance characteristics through manipulation of the relationship between the in-plane lattice constant of the interface of material layers. A high mobility two dimensional electron gas generated at the interface of the III-nitride materials permits high current conduction with low ON resistance, and is controllable through the manipulation of spontaneous polarization fields obtained according to the characteristics of the III-nitride material. The field effect transistor produced can be made to be a nominally on device where the in-plane lattice constants of the material forming the interface match. A nominally off device may be produced where one of the material layers has an in-plane lattice constant that is larger than that of the other layer material. The layer materials are preferably InAlGaN/GaN layers that are particularly tailored to the characteristics of the present invention.
摘要翻译：基于III族氮化物的场效应晶体管通过处理材料层的界面的面内晶格常数之间的关系来获得改进的性能特性。在III族氮化物材料的界面处产生的高迁移率二维电子气体允许具有低导通电阻的高电流传导，并且可以通过操纵根据III族氮化物材料的特性获得的自发极化场来控制。所产生的场效应晶体管可以在名义上成为形成界面的材料的面内晶格常数匹配的器件上。可以制造名义上关闭的装置，其中材料层之一的面内晶格常数大于其它层材料的面内晶格常数。层材料优选是特别适合于本发明特征的InAlGaN / GaN层。

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