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71. 发明申请

US20110241009A1 PIXEL STRUCTURE 有权
标题翻译：像素结构
公开(公告)号：US20110241009A1
公开(公告)日：2011-10-06
申请号：US13163780
申请日：2011-06-20
申请人： Kuo-Lung Fang , Hsiang-Lin Lin , Chin-Yueh Liao
发明人： Kuo-Lung Fang , Hsiang-Lin Lin , Chin-Yueh Liao
IPC分类号： H01L27/06
CPC分类号： H01L29/458 , H01L27/124 , H01L27/1288
摘要： A pixel structure includes a scan line, a data line, an active element, a first passivation layer, a second passivation layer and a pixel electrode. The data line includes a first data metal segment and a second data metal layer. The active element includes a gate electrode, an insulating layer, a channel layer, a source and a drain. The channel layer is positioned on the insulating layer above the gate electrode. The source and the drain are positioned on the channel layer. The source is coupled to the data line. The first passivation layer and the second passivation layer cover the active element and form a first contact hole to expose a part of the drain. The second passivation layer covers a part edge of the drain. The pixel electrode is disposed across the second passivation layer and coupled to the drain via the first contact hole.
摘要翻译：像素结构包括扫描线，数据线，有源元件，第一钝化层，第二钝化层和像素电极。数据线包括第一数据金属段和第二数据金属层。有源元件包括栅电极，绝缘层，沟道层，源极和漏极。沟道层位于栅电极上方的绝缘层上。源极和漏极位于沟道层上。源耦合到数据线。第一钝化层和第二钝化层覆盖有源元件并形成第一接触孔以暴露漏极的一部分。第二钝化层覆盖漏极的一部分边缘。像素电极跨越第二钝化层设置并且经由第一接触孔耦合到漏极。

72. 发明授权

US08008686B2 Light emitting diode chip 有权
标题翻译：发光二极管芯片
公开(公告)号：US08008686B2
公开(公告)日：2011-08-30
申请号：US12204815
申请日：2008-09-05
申请人： Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
发明人： Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/38 , H01L33/46
摘要： An LED chip includes a substrate, a semiconductor device layer, a wall structure, and a number of electrodes. The semiconductor device layer is disposed on the substrate and includes a first-type doped semiconductor layer disposed on the substrate, an active layer disposed on a portion of the first-type doped semiconductor layer, and a second-type doped semiconductor layer disposed on the active layer and having a first top surface. The wall structure is disposed on the first-type doped semiconductor layer that is not covered by the active layer and surrounds the active layer. Besides, the wall structure has a second top surface higher than the first top surface of the second-type doped semiconductor layer. Additionally, the electrodes are disposed on and electrically connected with the first-type doped semiconductor layer and the second-type doped semiconductor layer.
摘要翻译： LED芯片包括基板，半导体器件层，壁结构和多个电极。半导体器件层设置在衬底上，并且包括设置在衬底上的第一掺杂半导体层，设置在第一掺杂半导体层的一部分上的有源层和设置在第一掺杂半导体层上的第二掺杂半导体层活性层并具有第一顶表面。壁结构设置在第一型掺杂半导体层上，未被有源层覆盖并包围有源层。此外，壁结构具有比第二类型掺杂半导体层的第一顶表面高的第二顶表面。此外，电极设置在第一掺杂半导体层和第二掺杂半导体层上并与之电连接。

73. 发明申请

US20100167434A1 METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP 有权
标题翻译：用于制造发光二极管芯片的方法
公开(公告)号：US20100167434A1
公开(公告)日：2010-07-01
申请号：US12398165
申请日：2009-03-04
申请人： Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
发明人： Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
IPC分类号： H01L33/00
CPC分类号： H01L33/387 , H01L33/382 , H01L33/44
摘要： A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.
摘要翻译：提供一种制造发光二极管芯片的方法。首先，在基板上形成半导体器件层。之后，在半导体器件层的一部分上形成电流扩散层。然后，在未被电流扩展层覆盖的半导体器件层的一部分上形成电流阻挡层和钝化层。最后，在电流阻挡层和电流扩展层上形成第一电极。此外，在半导体器件层上形成第二电极。

74. 发明申请

US20100148189A1 LIGHT EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20100148189A1
公开(公告)日：2010-06-17
申请号：US12397353
申请日：2009-03-04
申请人： Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
发明人： Kuo-Lung Fang , Chien-Sen Weng , Chih-Wei Chao
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L33/387
摘要： A LED chip including a substrate, a semiconductor device layer, a current blocking layer, a current spread layer, a first electrode and a second electrode is provided. The semiconductor device layer is disposed on the substrate. The current blocking layer is disposed on a part of the semiconductor device layer and includes a current blocking segment and a current distribution adjusting segment. The current spread layer is disposed on a part of the semiconductor device layer and covers the current blocking layer. The first electrode is disposed on the current spread layer, wherein a part of the current blocking segment is overlapped with the first electrode. Contours of the current blocking segment and the first electrode are similar figures. Contour of the first electrode and is within contour of the current blocking segment. The current distribution adjusting segment is not overlapped with the first electrode.
摘要翻译：提供了包括衬底，半导体器件层，电流阻挡层，电流扩散层，第一电极和第二电极的LED芯片。半导体器件层设置在基板上。电流阻挡层设置在半导体器件层的一部分上，并且包括电流阻挡段和电流分布调节段。电流扩展层设置在半导体器件层的一部分上并覆盖电流阻挡层。第一电极设置在电流扩展层上，其中电流阻挡段的一部分与第一电极重叠。当前阻挡段和第一电极的轮廓是相似的图。第一个电极的等高线并且在当前阻挡段的轮廓内。电流分布调节段不与第一电极重叠。

75. 发明申请

US20090256164A1 Active Device Array Substrate and Method for Fabricating the Same 有权
标题翻译：有源器件阵列基板及其制造方法
公开(公告)号：US20090256164A1
公开(公告)日：2009-10-15
申请号：US12190887
申请日：2008-08-13
申请人： Kuo-Lung Fang , Hsiang-Lin Lin , Han-Tu Lin
发明人： Kuo-Lung Fang , Hsiang-Lin Lin , Han-Tu Lin
IPC分类号： H01L33/00 , H01L21/30
CPC分类号： H01L27/1288 , H01L27/124
摘要： An active device array substrate and its fabricating method are provided. According to the subject invention, the elements of an array substrate such as the thin film transistors, gate lines, gate pads, data lines, data pads and storage electrodes, are provided by forming a patterned first metal layer, an insulating layer, a patterned semiconductor layer and a patterned metal multilayer. Furthermore, the subject invention uses the means of selectively etching certain layers. Using the aforesaid means, the array substrate of the subject invention has some layers with under-cut structures, and thus, the number of the time-consuming and complicated mask etching process involved in the production of an array substrate can be reduced. The subject invention provides a relatively simple and time-saving method for producing an array substrate.
摘要翻译：提供一种有源器件阵列衬底及其制造方法。根据本发明，诸如薄膜晶体管，栅极线，栅极焊盘，数据线，数据焊盘和存储电极之类的阵列基板的元件通过形成图案化的第一金属层，绝缘层，图案化半导体层和图案化金属多层。此外，本发明使用选择性蚀刻某些层的方法。使用上述方法，本发明的阵列基板具有一些具有欠切割结构的层，因此可以减少在阵列基板的制造中涉及的耗时且复杂的掩模蚀刻工艺的数量。本发明提供了用于制造阵列基板的相对简单且省时的方法。

76. 发明申请

US20080213951A1 Method of fabricating pixel structure 审中-公开
标题翻译：制作像素结构的方法
公开(公告)号：US20080213951A1
公开(公告)日：2008-09-04
申请号：US11953878
申请日：2007-12-11
申请人： Chih-Hung Shih , Ming-Yuan Huang , Chih-Chun Yang , Han-Tu Lin , Ta-Wen Liao , Kuo-Lung Fang , Chia-Chi Tsai
发明人： Chih-Hung Shih , Ming-Yuan Huang , Chih-Chun Yang , Han-Tu Lin , Ta-Wen Liao , Kuo-Lung Fang , Chia-Chi Tsai
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , G02F1/13439 , H01L27/1214
摘要： A method of fabricating a pixel structure including the following procedures is provided. First, a substrate having an active device thereon is provided. A patterned passivation layer is formed on the substrate and the active device, and the patterned passivation layer exposes a portion of the active device. Then, a conductive layer is formed over the patterned passivation layer, and the conductive layer is electrically connected to the active device. A mask exposing a portion of the conductive layer is provided above the conductive layer. A laser is used to irradiate the conductive layer via the mask to remove the portion of the conductive layer exposed by the mask. As a result, the remained portion of the conductive layer constitutes a pixel electrode, and the pixel electrode is electrically connected to the active device. The method simplifies the fabrication process of a pixel structure, and thus reduces the fabrication cost.
摘要翻译：提供了一种制造包括以下步骤的像素结构的方法。首先，提供其上具有有源器件的衬底。图案化的钝化层形成在衬底和有源器件上，并且图案化的钝化层露出有源器件的一部分。然后，在图案化的钝化层上形成导电层，并且导电层电连接到有源器件。暴露导电层的一部分的掩模设置在导电层的上方。激光用于通过掩模照射导电层以去除由掩模暴露的导电层的部分。结果，导电层的残留部分构成像素电极，像素电极与有源器件电连接。该方法简化了像素结构的制造工艺，从而降低了制造成本。

77. 发明授权

US07417254B2 Switching device for a pixel electrode and methods for fabricating the same 有权
标题翻译：像素电极用开关元件及其制造方法
公开(公告)号：US07417254B2
公开(公告)日：2008-08-26
申请号：US11341822
申请日：2006-01-27
申请人： Kuo-Lung Fang , Wen-Ching Tsai , Han-Tu Lin
发明人： Kuo-Lung Fang , Wen-Ching Tsai , Han-Tu Lin
IPC分类号： H01L29/04 , H01L21/00
CPC分类号： H01L29/66765 , H01L27/14609 , H01L29/4908 , H01L29/78669
摘要： The invention discloses a switching devise for a pixel electrode of display devise and methods for fabricating the same. A gate is formed on a portion of a substrate. A semiconductor layer is formed on the gate. A source and a drain are formed on a portion of the semiconductor layer. A low-k (low dielectric constant) materia layer, such as a layer of a-SiC:H or a-SiCN:H, is formed between the gate and the semiconductor layer and/or on the source/ drain.
摘要翻译：本发明公开了一种用于显示装置的像素电极的开关装置及其制造方法。栅极形成在衬底的一部分上。在栅极上形成半导体层。源极和漏极形成在半导体层的一部分上。在栅极和半导体层之间和/或源极/漏极之间形成低k（低介电常数）材料层，例如a-SiC：H或a-SiCN:H层。

78. 发明申请

US20080067538A1 Electrode Structure of a Transistor, and Pixel Structure and Display Apparatus Comprising the Same 有权
标题翻译：晶体管的电极结构，以及包括其的像素结构和显示装置
公开(公告)号：US20080067538A1
公开(公告)日：2008-03-20
申请号：US11683131
申请日：2007-03-07
申请人： Yu-Min Lin , Kuo-Lung Fang , Feng-Yuan Gan
发明人： Yu-Min Lin , Kuo-Lung Fang , Feng-Yuan Gan
IPC分类号： H01L33/00 , H01L29/417
CPC分类号： H01L29/41733 , G02F1/1368 , H01L27/124 , H01L29/78618 , H01L29/78696
摘要： An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The electrode structure of the transistor comprises a first electrode and a second electrode. The first electrode has at least two first portions and at least one second portion. The first portions are substantially parallel with each other and each has a first width. The second portion has a second width, and connects the substantially parallel first portions to define a space with an opening. The first width is substantially greater than the second width.
摘要翻译：公开了晶体管的电极结构以及包括晶体管的电极结构的像素结构和显示装置。晶体管的电极结构包括第一电极和第二电极。第一电极具有至少两个第一部分和至少一个第二部分。第一部分基本上彼此平行并且每个具有第一宽度。第二部分具有第二宽度，并且连接大致平行的第一部分以限定具有开口的空间。第一宽度基本上大于第二宽度。

79. 发明申请

US20070007630A1 Switching element for a pixel electrode and methods for fabricating the same 审中-公开
标题翻译：用于像素电极的开关元件及其制造方法
公开(公告)号：US20070007630A1
公开(公告)日：2007-01-11
申请号：US11345090
申请日：2006-02-01
申请人： Kuo-Lung Fang , Wen-Ching Tsai , Kuo-Yuan Tu , Han-Tu Lin
发明人： Kuo-Lung Fang , Wen-Ching Tsai , Kuo-Yuan Tu , Han-Tu Lin
IPC分类号： H01L23/58
CPC分类号： H01L29/4908
摘要： The invention discloses a switching element for a pixel electrode of display device and methods for fabricating the same. A gate is formed on a substrate. A high-k dielectric layer is formed on the gate. The high-k dielectric layer comprises HfO2, HfNO, HfSiO, HfSiNO, or HfAlO. A semiconductor layer is formed on the high-k dielectric layer. A source and a drain are formed on a portion of the semiconductor layer.
摘要翻译：本发明公开了一种用于显示装置的像素电极的开关元件及其制造方法。栅极形成在基板上。在栅极上形成高k电介质层。高k介电层包括HfO 2 Hf，HfNO，HfSiO，HfSiNO或HfAlO。半导体层形成在高k电介质层上。源极和漏极形成在半导体层的一部分上。

80. 发明申请

US20060284176A1 Switching device for a pixel electrode and methods for fabricating the same 有权
标题翻译：像素电极用开关元件及其制造方法
公开(公告)号：US20060284176A1
公开(公告)日：2006-12-21
申请号：US11247345
申请日：2005-10-11
申请人： Kuo-Lung Fang , Wen-Ching Tsai , Kuo-Yuan Tu , Han-Tu Lin
发明人： Kuo-Lung Fang , Wen-Ching Tsai , Kuo-Yuan Tu , Han-Tu Lin
IPC分类号： H01L29/04 , H01L29/10
CPC分类号： H01L29/4908 , H01L29/66765 , H01L29/78669
摘要： The invention discloses a switching device for a pixel electrode of display device and methods for fabricating the same. A gate is formed on a substrate. A gate insulating layer is formed on the gate. A buffer layer is formed between the gate and the substrate, and/or formed between the gate and the gate insulating layer. The buffer layer comprises TaSix, TaSixNy, TiSix, TiSixNy, WSix, WSixNy, or WCxNy. A semiconductor layer is formed on the gate insulating layer. A source and a drain are formed on a portion of the semiconductor layer. The gate is covered by the buffer layer.
摘要翻译：本发明公开了一种用于显示装置的像素电极的开关装置及其制造方法。栅极形成在基板上。在栅极上形成栅极绝缘层。在栅极和衬底之间形成缓冲层，和/或形成在栅极和栅极绝缘层之间。缓冲层包括TaSi x N，Ta Si x N y N y，TiSi x x Ti，Ti Si x x， WS 1 x 2，W 1，X 2，X 3，...，N 2， > N 。在栅极绝缘层上形成半导体层。源极和漏极形成在半导体层的一部分上。门被缓冲层覆盖。

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