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71. 发明授权

US07256101B2 Methods for preparing a semiconductor assembly 有权
标题翻译：半导体组件的制备方法
公开(公告)号：US07256101B2
公开(公告)日：2007-08-14
申请号：US10893596
申请日：2004-07-15
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/0445 , H01L21/187 , H01L21/7602 , H01L33/0012 , H01L33/0029
摘要： Methods for preparing a semiconductor assembly are disclosed. In an implementation, the technique includes providing a support substrate and a bonding surface thereon, providing a donor substrate having a weakened zone that defines a useful layer and a bonding surface on the useful layer, and providing an interface layer of a predetermined material on the bonding surface of either the support substrate or the useful layer to provide a bonding surface thereon. The method also includes molecularly bonding the bonding surface of the interface layer to the bonding surface of the other of the support substrate or the useful layer to form a separable bonding interface therebetween, and to thus form the semiconductor assembly, and heat treating the semiconductor assembly to a temperature of at least 1000 to 1100° C. without substantially increasing molecular bonding between the bonding surface of the interface layer and the bonding surface of the other of the support substrate or the useful layer, so that the separable bonding interface maintains a sufficiently weak bond that can later be overcome by applying stresses to detach the useful layer from the donor substrate.
摘要翻译：公开了制备半导体组件的方法。在一个实施方案中，该技术包括在其上提供支撑衬底和结合表面，提供施主衬底，其具有限定可用层的弱化区和在有用层上的结合表面，以及在有用层上提供预定材料的界面层粘合表面，以在其上提供粘合表面。该方法还包括将界面层的结合表面分别结合到支撑衬底或有用层中的另一个的接合表面，以在其之间形成可分离的接合界面，从而形成半导体组件，并对半导体组件进行热处理达到至少1000〜1100℃的温度，而不会在界面层的接合面与支撑基板或有用层的另一方的接合面之间基本上增加分子接合，使得可分离的接合界面保持足够的弱键可以随后通过施加应力来克服有用层与施主衬底的分离。

72. 发明申请

US20070148915A1 DEVICE AND METHOD FOR CUTTING AN ASSEMBLY 有权
标题翻译：用于切割组件的装置和方法
公开(公告)号：US20070148915A1
公开(公告)日：2007-06-28
申请号：US11681349
申请日：2007-03-02
申请人： Olivier Rayssac , Fabrice Letertre
发明人： Olivier Rayssac , Fabrice Letertre
IPC分类号： H01L21/46
CPC分类号： B28D5/0011 , B28D5/0023 , B28D5/0052 , B28D5/0064 , H01L21/2007 , H01L21/76254 , Y10T83/364 , Y10T156/1126 , Y10T156/1184 , Y10T156/1928 , Y10T156/1967 , Y10T156/1972
摘要： A method is presented for cutting an assembly that includes two layers of material having a first surface and a second surface. The method includes providing a weakened interface between the two layers that defines an interface ring about the periphery of the assembly, providing a high-pressure zone at the interface ring, and providing at least one controllable low-pressure zone in the vicinity of at least one of the first surface and the second surface. The technique also includes supplying the high-pressure zone with a controllable high-pressure force, and attacking the interface ring with at least one mechanical force in combination with the high-pressure force to cut the assembly.
摘要翻译：提出了一种用于切割包括具有第一表面和第二表面的两层材料的组件的方法。该方法包括在两个层之间提供弱化的界面，其限定围绕组件的周边的界面环，在界面环处提供高压区，并且在至少附近提供至少一个可控制的低压区第一表面和第二表面之一。该技术还包括向高压区域供应可控的高压力，并且以至少一个机械力与高压力结合来对接口环进行攻击以切割组件。

73. 发明授权

US07232738B2 Device and method for cutting an assembly 有权
标题翻译：用于切割装配体的装置和方法
公开(公告)号：US07232738B2
公开(公告)日：2007-06-19
申请号：US10886436
申请日：2004-07-06
申请人： Olivier Rayssac , Fabrice Letertre
发明人： Olivier Rayssac , Fabrice Letertre
IPC分类号： H01L21/46
CPC分类号： B28D5/0011 , B28D5/0023 , B28D5/0052 , B28D5/0064 , H01L21/2007 , H01L21/76254 , Y10T83/364 , Y10T156/1126 , Y10T156/1184 , Y10T156/1928 , Y10T156/1967 , Y10T156/1972
摘要： A method is presented for cutting an assembly that includes two layers of material having a first surface and a second surface. The method includes providing a weakened interface between the two layers that defines an interface ring about the periphery of the assembly, providing a high-pressure zone at the interface ring, and providing at least one controllable low-pressure zone in the vicinity of at least one of the first surface and the second surface. The technique also includes supplying the high-pressure zone with a controllable high-pressure force, and attacking the interface ring with at least one mechanical force in combination with the high-pressure force to cut the assembly.
摘要翻译：提出了一种用于切割包括具有第一表面和第二表面的两层材料的组件的方法。该方法包括在两个层之间提供弱化的界面，其限定围绕组件的周边的界面环，在界面环处提供高压区，并且在至少附近提供至少一个可控制的低压区第一表面和第二表面之一。该技术还包括向高压区域供应可控的高压力，并且以至少一个机械力与高压力结合来对接口环进行攻击以切割组件。

74. 发明申请

US20070119893A1 SUBSTRATE CUTTING DEVICE AND METHOD 有权
标题翻译：基板切割装置及方法
公开(公告)号：US20070119893A1
公开(公告)日：2007-05-31
申请号：US11622053
申请日：2007-01-11
申请人： Olivier Rayssac , Fabrice Letertre
发明人： Olivier Rayssac , Fabrice Letertre
IPC分类号： B26F3/00
CPC分类号： H01L21/76254 , B28D5/0011 , B28D5/0023 , B28D5/0052 , B28D5/0064 , H01L21/2007 , Y10T29/53274 , Y10T83/0267 , Y10T83/04 , Y10T83/364 , Y10T156/1059 , Y10T156/1184 , Y10T156/1189 , Y10T156/1961 , Y10T156/1967 , Y10T156/1972 , Y10T225/10 , Y10T225/12 , Y10T225/30 , Y10T225/307 , Y10T225/35 , Y10T225/386
摘要： An automatic cutting device is described for cutting an assembly. The assembly includes a material having a weakened zone therein that defines a useful layer and being attached to a source substrate. The cutting device includes a cutting mechanism and a holding and positioning mechanism operatively associated with the cutting mechanism. The holding and positioning mechanism positions the material so that the cutting mechanism detaches the layer from the source substrate along the weakened zone. The cutting device also includes a control mechanism for adjusting at least two different portions of the assembly during detachment of the layer to facilitate a more precise detachment.
摘要翻译：描述了用于切割组件的自动切割装置。组件包括其中具有弱化区的材料，其限定有用层并且附接到源基底。切割装置包括切割机构和与切割机构可操作地相关联的保持和定位机构。保持定位机构定位材料，使得切割机构沿着弱化区域从源基板分离出层。切割装置还包括一个控制机构，用于在分离该层期间调节该组件的至少两个不同部分，以便于更精确的拆卸。

75. 发明授权

US07182234B2 Substrate cutting device and method 有权
标题翻译：基板切割装置及方法
公开(公告)号：US07182234B2
公开(公告)日：2007-02-27
申请号：US10883435
申请日：2004-07-01
申请人： Olivier Rayssac , Fabrice Letertre
发明人： Olivier Rayssac , Fabrice Letertre
IPC分类号： B26F3/00
CPC分类号： H01L21/76254 , B28D5/0011 , B28D5/0023 , B28D5/0052 , B28D5/0064 , H01L21/2007 , Y10T29/53274 , Y10T83/0267 , Y10T83/04 , Y10T83/364 , Y10T156/1059 , Y10T156/1184 , Y10T156/1189 , Y10T156/1961 , Y10T156/1967 , Y10T156/1972 , Y10T225/10 , Y10T225/12 , Y10T225/30 , Y10T225/307 , Y10T225/35 , Y10T225/386
摘要： An automatic cutting device is described for cutting an assembly. The assembly includes a material having a weakened zone therein that defines a useful layer and being attached to a source substrate. The cutting device includes a cutting mechanism and a holding and positioning mechanism operatively associated with the cutting mechanism. The holding and positioning mechanism positions the material so that the cutting mechanism detaches the layer from the source substrate along the weakened zone. The cutting device also includes a control mechanism for adjusting at least two different portions of the assembly during detachment of the layer to facilitate a more precise detachment.
摘要翻译：描述了用于切割组件的自动切割装置。组件包括其中具有弱化区的材料，其限定有用层并且附接到源基底。切割装置包括切割机构和与切割机构可操作地相关联的保持和定位机构。保持定位机构定位材料，使得切割机构沿着弱化区域从源基板分离出层。该切割装置还包括一个控制机构，用于在分离该层期间调节组件的至少两个不同部分，以便于更精确的拆卸。

76. 发明申请

US20060216849A1 Substrate for stressed systems and method of making same 失效
公开(公告)号：US20060216849A1
公开(公告)日：2006-09-28
申请号：US11434930
申请日：2006-05-17
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/00 , H01L21/20 , H01L21/30
CPC分类号： H01L21/187 , B81C1/00365 , B81C2201/0191 , C30B25/183 , H01L21/0237 , H01L21/0243 , H01L21/02439 , H01L21/0245 , H01L21/02513 , H01L21/02658 , H01L21/02664 , H01L21/76254
摘要： A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.

77. 发明申请

US20060189095A1 Semiconductor substrates having useful and transfer layers 有权
标题翻译：具有有用和转移层的半导体衬底
公开(公告)号：US20060189095A1
公开(公告)日：2006-08-24
申请号：US11402052
申请日：2006-04-12
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L21/30 , H01L21/425
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. The method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source substrate along the zone of weakness; depositing a useful layer upon the transfer layer; and depositing a support material on the useful layer to form the final substrate. The useful layer may be deposited on the transfer layer before or after detaching the transfer layer from the source substrate. The useful layer is typically made of a material having a large band gap, and comprises at least one of gallium nitride, or aluminum nitride, or of compounds of at least two elements including at least one element of aluminum, indium, and gallium. The zone of weakness may advantageously be formed by implanting atomic species into the source substrate.
摘要翻译：描述了用于制造用于光学，电子学或光电子学的最终衬底的方法。该方法包括在源极衬底的表面下方形成弱化区以限定转移层; 沿着弱化区域将转移层从源底物分离; 在转移层上沉积有用的层; 以及在有用层上沉积支撑材料以形成最终的基底。在从源极衬底分离转移层之前或之后，有用层可以沉积在转移层上。有用层通常由具有大带隙的材料制成，并且包括氮化镓或氮化铝中的至少一种，或包括至少两种元素的化合物，包括至少一种铝，铟和镓元素。可以通过将原子物质注入到源底物中来有利地形成弱点区域。

78. 发明授权

US07041577B2 Process for manufacturing a substrate and associated substrate 有权
标题翻译：用于制造衬底和相关衬底的工艺
公开(公告)号：US07041577B2
公开(公告)日：2006-05-09
申请号：US10972158
申请日：2004-10-22
申请人： Olivier Rayssac , Fabrice Letertre
发明人： Olivier Rayssac , Fabrice Letertre
IPC分类号： H01L21/46 , H01L21/30
CPC分类号： H01L31/184 , H01L21/76251 , H01L33/0079 , H01L2221/68363 , Y02E10/544 , Y02P70/521
摘要： A process for producing a substrate is described. The process includes providing an assembly having a first layer weakly bonded to a temporary support at an interface therebetween. At least a portion of the first layer is selectively etched substantially to the interface to create an etched zone. A second layer is then bonded to un-etched portions of the first layer to cover the etched zone and to form a closed cavity. The first layer is detached from the temporary support at the weak bond by providing a raised pressure in the cavity.
摘要翻译：对基板的制造方法进行说明。该方法包括提供一种组件，该组件具有在它们之间的界面处弱结合到临时支撑件的第一层。选择性地蚀刻第一层的至少一部分到界面以产生蚀刻区。然后将第二层粘合到第一层的未蚀刻部分以覆盖蚀刻区并形成闭合腔。通过在空腔中提供升高的压力，将第一层与弱键处的临时支撑件分离。

79. 发明申请

US20050258483A1 Quasi-vertical power semiconductor device on a composite substrate 审中-公开
标题翻译：准垂直功率半导体器件在复合衬底上
公开(公告)号：US20050258483A1
公开(公告)日：2005-11-24
申请号：US10526641
申请日：2003-09-01
申请人： Francois Templier , Lea Di Cioccio , Thierry Billon , Fabrice Letertre
发明人： Francois Templier , Lea Di Cioccio , Thierry Billon , Fabrice Letertre
IPC分类号： H01L29/20 , H01L29/24 , H01L29/47 , H01L29/868 , H01L29/872 , H01L29/76
CPC分类号： H01L29/872 , H01L29/1608 , H01L29/2003 , H01L29/868
摘要： The invention relates to a power semiconducting device made from a semiconducting material epitaxied on a stacked structure (10) comprising a layer of semiconducting material (13) transferred onto a first face of a support substrate (11) and fixed to the support substrate by an electrically insulating layer (12), the support substrate comprising electrically conducting means between said first face and a second face, the transferred layer of semiconducting material (13) acting as an epitaxy support for the epitaxied semiconducting material (14, 15). Means (16, 17) of electrically connecting the device are provided, firstly on the epitaxied semiconducting material, and secondly on the second face of the support substrate, an electrical connection through the electrically insulating layer and said electrically conducting means of the support substrate electrically connecting the epitaxied semiconducting material (14, 15) to the electrically connecting means (17) provided on the second face of the support substrate (11).
摘要翻译：本发明涉及由半导体材料制成的功率半导体器件，该半导体材料包括在层叠结构（10）上，包括转移到支撑衬底（11）的第一面上的半导体材料层（13），并通过一个电绝缘层（12），所述支撑衬底包括在所述第一面和第二面之间的导电装置，所述转移的半导体材料层（13）用作所述表面半导体材料（14,15）的外延支撑。提供电连接器件的装置（16,17），首先在表面半导体材料上，其次在支撑衬底的第二面上，通过电绝缘层和支撑衬底的所述导电装置的电连接电将所述表面半导体材料（14,15）连接到设置在所述支撑基板（11）的第二面上的所述电连接装置（17）。

80. 发明授权

US06867067B2 Methods for fabricating final substrates 有权
标题翻译：制造最终基板的方法
公开(公告)号：US06867067B2
公开(公告)日：2005-03-15
申请号：US10446604
申请日：2003-05-27
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L27/12 , H01L21/02 , H01L21/762 , H01L29/165 , H01L29/20 , H01L29/24 , H01L29/267 , H01L21/44 , H01L21/30
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. In an embodiment, the method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer, and forming a first bonding layer on the source substrate surface. A second bonding layer may be formed on a surface of an intermediate support, and the exposed surfaces of the first and second bonding layers joined to form a composite substrate. Next, the source substrate is detached from the composite substrate along the zone of weakness to expose a surface of the transfer layer, and a support material is deposited onto the exposed surface of the transfer layer. The transfer layer and support material are then separated from the composite substrate by elimination of at least the first bonding layer to form the final substrate. The zone of weakness may advantageously be formed by implanting atomic species into the source substrate.
摘要翻译：描述了用于制造用于光学，电子学或光电子学的最终衬底的方法。在一个实施例中，该方法包括在源极衬底的表面下方形成弱化区以限定转移层，以及在源极衬底表面上形成第一结合层。第二接合层可以形成在中间支撑体的表面上，并且第一和第二接合层的暴露表面接合以形成复合衬底。接下来，源极衬底沿着弱化区从复合衬底分离以暴露转移层的表面，并且将载体材料沉积到转印层的暴露表面上。然后通过消除至少第一结合层以形成最终的基底，将转移层和载体材料与复合基材分离。可以通过将原子物质注入到源底物中来有利地形成弱点区域。

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