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1. 发明申请

US20050258483A1 Quasi-vertical power semiconductor device on a composite substrate 审中-公开
标题翻译：准垂直功率半导体器件在复合衬底上
公开(公告)号：US20050258483A1
公开(公告)日：2005-11-24
申请号：US10526641
申请日：2003-09-01
申请人： Francois Templier , Lea Di Cioccio , Thierry Billon , Fabrice Letertre
发明人： Francois Templier , Lea Di Cioccio , Thierry Billon , Fabrice Letertre
IPC分类号： H01L29/20 , H01L29/24 , H01L29/47 , H01L29/868 , H01L29/872 , H01L29/76
CPC分类号： H01L29/872 , H01L29/1608 , H01L29/2003 , H01L29/868
摘要： The invention relates to a power semiconducting device made from a semiconducting material epitaxied on a stacked structure (10) comprising a layer of semiconducting material (13) transferred onto a first face of a support substrate (11) and fixed to the support substrate by an electrically insulating layer (12), the support substrate comprising electrically conducting means between said first face and a second face, the transferred layer of semiconducting material (13) acting as an epitaxy support for the epitaxied semiconducting material (14, 15). Means (16, 17) of electrically connecting the device are provided, firstly on the epitaxied semiconducting material, and secondly on the second face of the support substrate, an electrical connection through the electrically insulating layer and said electrically conducting means of the support substrate electrically connecting the epitaxied semiconducting material (14, 15) to the electrically connecting means (17) provided on the second face of the support substrate (11).
摘要翻译：本发明涉及由半导体材料制成的功率半导体器件，该半导体材料包括在层叠结构（10）上，包括转移到支撑衬底（11）的第一面上的半导体材料层（13），并通过一个电绝缘层（12），所述支撑衬底包括在所述第一面和第二面之间的导电装置，所述转移的半导体材料层（13）用作所述表面半导体材料（14,15）的外延支撑。提供电连接器件的装置（16,17），首先在表面半导体材料上，其次在支撑衬底的第二面上，通过电绝缘层和支撑衬底的所述导电装置的电连接电将所述表面半导体材料（14,15）连接到设置在所述支撑基板（11）的第二面上的所述电连接装置（17）。

2. 发明申请

US20060125057A1 Method for the production of a composite sicoi-type substrate comprising an epitaxy stage 审中-公开
标题翻译：用于生产包含外延级的复合硅片型基材的方法
公开(公告)号：US20060125057A1
公开(公告)日：2006-06-15
申请号：US10526657
申请日：2003-09-01
申请人： Lea Di Cioccio , Francois Templier , Thierry Billon , Fabrice Letertre
发明人： Lea Di Cioccio , Francois Templier , Thierry Billon , Fabrice Letertre
IPC分类号： H01L31/0312 , H01L29/06
CPC分类号： H01L21/7602 , C30B25/02 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02447 , H01L21/02529 , H01L21/2007
摘要： The invention relates to an SiCOI type composite substrate manufacturing method comprising the following steps: supply of an initial substrate comprising an Si or SiC support (1) bearing a layer (2) of SiO2 whereon a thin layer (3) of SiC is transferred, epitaxy of SiC (4) on the thin layer (3) of SiC. The epitaxy is conducted at the following temperatures from 1450° C. to obtain 6H or 4H polytype epitaxy (4) on a transferred thin 6H or 4H polytype layer (3) respectively, if the support (1) consists of SiC, from 1350° C. to obtain 3C polytype epitaxy (4) on a transferred thin 3C polytype layer (3), if the support (1) consists of Si or SiC, from 1350° C. to obtain 6H or 4H polytype epitaxy (4) on a transferred thin 6H or 4H polytype layer (3) respectively, if the support (1) consists of Si.
摘要翻译：本发明涉及一种SiCOI型复合衬底制造方法，包括以下步骤：提供包含Si或SiC载体（1）的初始衬底，所述Si或SiC载体（1）承载SiO 2层（2），其中SiC的薄层（3）被转移，在SiC的薄层（3）上SiC（4）的外延。如果载体（1）由SiC组成，则从1350°C开始，在1450℃的温度下进行外延生长，以在转移的薄6H或4H多型层（3）上分别获得6H或4H多型外延（4）如果载体（1）由Si或SiC由1350℃组成，则在转移的薄3C多型层（3）上获得3C多型外延（4），以获得6H或4H多型外延（4）如果载体（1）由Si组成，则分别转移薄的6H或4H多型层（3）。

3. 发明申请

US20050282358A1 Method for transferring an electrically active thin layer 审中-公开
标题翻译：传递电活性薄层的方法
公开(公告)号：US20050282358A1
公开(公告)日：2005-12-22
申请号：US10519406
申请日：2003-07-15
申请人： Lea Di Cioccio , Fabrice Letertre , Elsa Hugonnard-Bruyere
发明人： Lea Di Cioccio , Fabrice Letertre , Elsa Hugonnard-Bruyere
IPC分类号： C23C14/48 , H01L21/205 , H01L21/76 , H01L21/762 , H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/7602
摘要： A method for transferring an electrically active thin film from an initial substrate to a target substrate including: ion implantation through one face of the initial substrate to create a buried, embrittled film at a determined depth relative to the implanted face of the initial substrate, thus delimiting a thin film between the implanted face and the buried face; fastening the implanted face of the initial substrate with a face of the target substrate; separating the thin film from the remainder of the initial substrate at the level of the buried film; and thinning down the thin film transferred on the target substrate. The implantation dosage, energy, and current are chosen, during the ion implantation, so that concentration in implantation defects is less than a determined threshold, resulting in, within the thinned down thin film, a number of acceptor defects compatible with desired electrical properties of the thin film.
摘要翻译：一种用于将电活性薄膜从初始衬底转移到目标衬底的方法，包括：通过初始衬底的一个面的离子注入，以相对于初始衬底的注入面在确定的深度产生掩埋的脆化薄膜，因此在植入面和掩埋面之间限定薄膜; 用目标衬底的表面紧固初始衬底的植入面; 将所述薄膜与所述初始衬底的其余部分在所述掩埋膜的水平面分离; 并减薄转移到目标衬底上的薄膜。在离子注入期间选择注入剂量，能量和电流，使得植入缺陷中的浓度小于确定的阈值，导致在薄化的薄膜内的许多受体缺陷与期望的电性能薄膜。

4. 发明授权

US09041165B2 Relaxation and transfer of strained material layers 有权
标题翻译：应变材料层的松弛和转移
公开(公告)号：US09041165B2
公开(公告)日：2015-05-26
申请号：US13201365
申请日：2010-01-11
申请人： Fabrice Letertre , Bruce Faure , Pascal Guenard
发明人： Fabrice Letertre , Bruce Faure , Pascal Guenard
IPC分类号： H01L21/762 , H01L21/02 , C30B29/40 , C30B33/02 , C30B33/06
CPC分类号： H01L21/02664 , C30B29/403 , C30B33/02 , C30B33/06 , H01L21/02381 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/762 , H01L21/76254
摘要： A method for the formation of an at least partially relaxed strained material layer, comprises providing a seed substrate; patterning the seed substrate; growing a strained material layer on the patterned seed substrate; transferring the strained material layer from the patterned seed substrate to an intermediate substrate; and at least partially relaxing the strained material layer by a heat treatment.
摘要翻译：一种用于形成至少部分松弛的应变材料层的方法，包括提供种子基底; 图案化种子基底; 在图案化种子基底上生长应变材料层; 将所述应变材料层从所述图案化种子基底转移到中间基底; 并通过热处理至少部分地松弛应变材料层。

5. 发明申请

US20120329243A1 PROCESS FOR FABRICATING A SEMICONDUCTOR STRUCTURE EMPLOYING A TEMPORARY BOND 有权
标题翻译：制作临时粘结的半导体结构的工艺
公开(公告)号：US20120329243A1
公开(公告)日：2012-12-27
申请号：US13526105
申请日：2012-06-18
申请人： Fabrice Letertre , Didier Landru
发明人： Fabrice Letertre , Didier Landru
IPC分类号： H01L21/30 , H01L21/31 , H01L29/06
CPC分类号： H01L21/76254
摘要： The invention relates to a process for fabricating a semiconductor that comprises providing a handle substrate comprising a seed substrate and a weakened sacrificial layer covering the seed substrate; joining the handle substrate with a carrier substrate; optionally treating the carrier substrate; detaching the handle substrate at the sacrificial layer to form the semiconductor structure; and removing any residue of the sacrificial layer present on the seed substrate.
摘要翻译：本发明涉及一种制造半导体的方法，该方法包括提供一种包括籽晶基底的手柄基片和覆盖种子基底的弱化牺牲层; 将所述手柄基板与载体基板接合; 任选地处理载体衬底; 在牺牲层处分离手柄基板以形成半导体结构; 并去除种子基底上存在的牺牲层的任何残留物。

6. 发明申请

US20120214291A1 RELAXATION OF STRAINED LAYERS 有权
标题翻译：应变层的松弛
公开(公告)号：US20120214291A1
公开(公告)日：2012-08-23
申请号：US13458587
申请日：2012-04-27
申请人： Fabrice Letertre , Carlos Mazure , Michael R. Krames , Melvin B. McLaurin , Nathan F. Gardner
发明人： Fabrice Letertre , Carlos Mazure , Michael R. Krames , Melvin B. McLaurin , Nathan F. Gardner
IPC分类号： H01L21/762
CPC分类号： H01L21/2007 , H01L21/02422 , H01L21/02458 , H01L21/0254 , H01L21/02658 , H01L21/3245 , H01L33/0095
摘要： A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material.
摘要翻译：一种放松应变材料层的方法。该方法包括在应变材料层的第一面上沉积第一低粘度层; 将第一衬底粘合到第一低粘度层以形成第一复合结构; 对所述复合结构进行热处理以使所述第一低粘度层的回流至少部分地松弛所述应变材料层; 以及向所述应变材料层的第二面施加机械压力，其中所述第二面与所述第一面相对，并且在至少部分热处理期间垂直于所述应变材料层施加机械压力以松弛所述应变材料。

7. 发明申请

US20120112205A1 SEMICONDUCTOR STRUCTURES AND DEVICES INCLUDING SEMICONDUCTOR MATERIAL ON A NON-GLASSY BONDING LAYER 有权
标题翻译：半导体结构和器件包括半导体材料在非玻璃结合层
公开(公告)号：US20120112205A1
公开(公告)日：2012-05-10
申请号：US13343512
申请日：2012-01-04
申请人： Fabrice Letertre
发明人： Fabrice Letertre
IPC分类号： H01L29/20
CPC分类号： H01L21/76254
摘要： Methods of fabricating semiconductor structures and devices include bonding a seed structure to a substrate using a glass. The seed structure may comprise a crystal of semiconductor material. Thermal treatment of the seed structure bonded to the substrate using the glass may be utilized to control a strain state within the seed structure. The seed structure may be placed in a state of compressive strain at room temperature. The seed structure bonded to the substrate using the glass may be used for growth of semiconductor material, or, in additional methods, a seed structure may be bonded to a first substrate using a glass, thermally treated to control a strain state within the seed structure and a second substrate may be bonded to an opposite side of the seed structure using a non-glassy material.
摘要翻译：制造半导体结构和器件的方法包括使用玻璃将种子结构结合到基底上。种子结构可以包括半导体材料的晶体。使用玻璃对结合到基底的种子结构的热处理可用于控制种子结构内的应变状态。种子结构可以在室温下处于压缩应变状态。使用玻璃结合到基板的种子结构可以用于半导体材料的生长，或者在另外的方法中，可以使用玻璃将晶种结构结合到第一基板上，进行热处理以控制晶种结构内的应变状态并且第二基底可以使用非玻璃质材料结合到种子结构的相对侧。

8. 发明申请

US20120100692A1 METHODS OF FABRICATING SEMICONDUCTOR STRUCTURES AND DEVICES WITH STRAINED SEMICONDUCTOR MATERIAL 有权
标题翻译：制备半导体结构的方法和具有应变半导体材料的器件
公开(公告)号：US20120100692A1
公开(公告)日：2012-04-26
申请号：US13343530
申请日：2012-01-04
申请人： Fabrice Letertre
发明人： Fabrice Letertre
IPC分类号： H01L21/20 , H01L21/30
CPC分类号： H01L21/76254
摘要： Methods of fabricating semiconductor structures and devices include bonding a seed structure to a substrate using a glass. The seed structure may comprise a crystal of semiconductor material. Thermal treatment of the seed structure bonded to the substrate using the glass may be utilized to control a strain state within the seed structure. The seed structure may be placed in a state of compressive strain at room temperature. The seed structure bonded to the substrate using the glass may be used for growth of semiconductor material, or, in additional methods, a seed structure may be bonded to a first substrate using a glass, thermally treated to control a strain state within the seed structure and a second substrate may be bonded to an opposite side of the seed structure using a non-glassy material.
摘要翻译：制造半导体结构和器件的方法包括使用玻璃将种子结构结合到基底上。种子结构可以包括半导体材料的晶体。使用玻璃对结合到基底的种子结构的热处理可用于控制种子结构内的应变状态。种子结构可以在室温下处于压缩应变状态。使用玻璃结合到基板的种子结构可以用于半导体材料的生长，或者在另外的方法中，可以使用玻璃将晶种结构结合到第一基板上，进行热处理以控制晶种结构内的应变状态并且第二基底可以使用非玻璃质材料结合到种子结构的相对侧。

9. 发明申请

US20110180911A1 METHODS FOR RELAXATION AND TRANSFER OF STRAINED LAYERS AND STRUCTURES FABRICATED THEREBY 有权
标题翻译：松弛和转移应变层和结构的方法
公开(公告)号：US20110180911A1
公开(公告)日：2011-07-28
申请号：US13081788
申请日：2011-04-07
申请人： Pascal Guenard , Bruce Faure , Fabrice Letertre , Michael R. Krames , Nathan F. Gardner , Melvin B. McLaurin
发明人： Pascal Guenard , Bruce Faure , Fabrice Letertre , Michael R. Krames , Nathan F. Gardner , Melvin B. McLaurin
IPC分类号： H01L29/02 , H01L21/762
CPC分类号： H01L33/0079 , H01L21/6835 , H01L31/1848 , H01L31/1852 , H01L31/1892 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L2221/68359 , Y02E10/544 , Y02P70/521
摘要： The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.
摘要翻译：本发明提供了在目标基底上形成至少部分松弛的应变材料层的方法。所述方法包括在中间衬底上形成应变材料层的岛，通过第一热处理至少部分地松弛应变材料岛，并将至少部分松弛的应变材料岛转移到目标衬底。通过存在与应变材料层相邻的低粘度或柔顺层，促进了至少部分松弛。本发明还提供了具有至少部分松弛的应变材料层的半导体结构，以及使用至少部分松弛的应变材料层制造的半导体器件。

10. 发明授权

US07972939B2 Transfer method with a treatment of a surface to be bonded 有权
标题翻译：转移方法处理待粘合的表面
公开(公告)号：US07972939B2
公开(公告)日：2011-07-05
申请号：US12566036
申请日：2009-09-24
申请人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
发明人： Sébastien Kerdiles , Christophe Maleville , Fabrice Letertre , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/76254
摘要： A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor wafer providing a layer of material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and a portion of the donor wafer is removed to transfer the thin layer to the receiving handle wafer and form the semiconductor structure. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first surface of the donor wafer prior to bonding by exposure to a plasma, and by conducting any thermal treatments after plasma activation at a temperature of 300° C. to 500° C. in order to avoid diffusion of impurities into the transfer layer.
摘要翻译：一种用于在从施主晶片传输薄层期间最小化或避免接收处理晶片的污染的方法。该方法包括提供施主晶片和接收处理晶片，每个晶片具有准备用于接合的第一表面和第二表面，施主晶片提供要传送到接收处理晶片的材料层。接下来，当第一表面结合在一起时，处理至少一个第一表面以提供增加的结合能; 然后将表面结合在一起以形成中间多层结构; 并且去除施主晶片的一部分以将薄层转移到接收处理晶片并形成半导体结构。该方法通过在通过暴露于等离子体的接合之前仅处理施主晶片的第一表面，并且在300℃的温度下进行等离子体激活之后进行任何热处理来避免或最小化接收处理晶片的第二表面的污染至500℃，以避免杂质扩散到转移层中。

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