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71. 发明授权

US08304779B2 Thin film transistor, and display device having the thin film transistor 有权
标题翻译：薄膜晶体管和具有薄膜晶体管的显示装置
公开(公告)号：US08304779B2
公开(公告)日：2012-11-06
申请号：US12258569
申请日：2008-10-27
申请人： Shunpei Yamazaki , Yasuhiro Jinbo
发明人： Shunpei Yamazaki , Yasuhiro Jinbo
IPC分类号： H01L29/76
CPC分类号： H01L29/4908 , H01L29/04 , H01L29/66765 , H01L29/78609 , H01L29/78678 , H01L29/78696
摘要： The thin film transistor includes a gate insulating film formed over a gate electrode; a microcrystalline semiconductor film including an impurity element which serves as a donor, formed over the gate insulating film; a pair of buffer layers formed over the microcrystalline semiconductor film; a pair of semiconductor films to which an impurity element imparting one conductivity type is added, formed over the pair of buffer layers; and wirings formed over the pair of semiconductor films to which an impurity element imparting one conductivity type is added. The concentration of the impurity element which serves as a donor in the microcrystalline semiconductor film is decreased from the gate insulating film side toward the buffer layers, and the buffer layers do not include the impurity element which serves as a donor at a higher concentration than the detection limit of SIMS.
摘要翻译：薄膜晶体管包括形成在栅电极上的栅极绝缘膜; 包括形成在所述栅极绝缘膜上的用作供体的杂质元素的微晶半导体膜; 形成在所述微晶半导体膜上的一对缓冲层; 在一对缓冲层上形成一对添加有赋予一种导电类型的杂质元素的半导体膜; 并且在添加有赋予一种导电类型的杂质元素的一对半导体膜上形成的布线。作为微晶半导体膜中的供体的杂质元素的浓度从栅极绝缘膜侧朝向缓冲层减少，缓冲层不包含作为供体的杂质元素，其浓度高于 SIMS检测限。

72. 发明申请

US20120187408A1 MICROCRYSTALLINE SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：微晶半导体膜，其制造方法和制造半导体器件的方法
公开(公告)号：US20120187408A1
公开(公告)日：2012-07-26
申请号：US13355340
申请日：2012-01-20
申请人： Tetsuhiro TANAKA , Takashi Ienaga , Ryu Komatsu , Erika Kato , Ryota Tajima , Yasuhiro Jinbo
发明人： Tetsuhiro TANAKA , Takashi Ienaga , Ryu Komatsu , Erika Kato , Ryota Tajima , Yasuhiro Jinbo
IPC分类号： H01L29/04 , H01L21/20 , H01L21/336
CPC分类号： H01L29/78696 , H01L21/02422 , H01L21/0245 , H01L21/02502 , H01L21/02513 , H01L21/02532 , H01L21/02595 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/66765 , H01L29/78648 , H01L29/78654 , H01L29/78678
摘要： An embodiment of the present invention is a microcrystalline semiconductor film having a thickness of more than or equal to 70 nm and less than or equal to 100 nm and including a crystal grain partly projecting from a surface of the microcrystalline semiconductor film. The crystal grain has an orientation plane and includes a crystallite having a size of 13 nm or more. Further, the film density of the microcrystalline semiconductor film is higher than or equal to 2.25 g/cm3 and lower than or equal to 2.35 g/cm3, preferably higher than or equal to 2.30 g/cm and lower than or equal to 2.33 g/cm3.
摘要翻译：本发明的一个实施方案是具有大于或等于70nm且小于或等于100nm的厚度的微晶半导体膜，并且包括从微晶半导体膜的表面部分地突出的晶粒。晶粒具有取向平面，并且包括尺寸为13nm以上的微晶。此外，微晶半导体膜的膜密度高于或等于2.25g / cm 3，低于或等于2.35g / cm 3，优选高于或等于2.30g / cm 2且低于或等于2.33g / cm3。

73. 发明授权

US08049215B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08049215B2
公开(公告)日：2011-11-01
申请号：US12426983
申请日：2009-04-21
申请人： Yasuhiro Jinbo , Tomokazu Yokoi
发明人： Yasuhiro Jinbo , Tomokazu Yokoi
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01J37/32018 , H01J37/32091 , H01L29/78669 , H01L29/78678
摘要： A thin film transistor has a gate electrode; a gate insulating layer provided so as to cover the gate electrode layer; a pair of impurity semiconductor layers forming source and drain regions which is provided so that at least part of each of them overlaps the gate electrode layer and which are provided with a space therebetween; a microcrystalline semiconductor layer provided over the gate insulating layer in part of a channel length; a semiconductor layer provided over the gate insulating layer so as to cover at least the microcrystalline semiconductor layer; and an amorphous semiconductor layer provided between the semiconductor layer and the pair of impurity semiconductor layers. An impurity element which reduces the coordination number of silicon and generates dangling bonds is made to exist in the semiconductor layer.
摘要翻译：薄膜晶体管具有栅电极; 设置为覆盖所述栅极电极层的栅极绝缘层; 形成源区和漏区的一对杂质半导体层，其被设置为使得它们的至少一部分与栅电极层重叠并且在它们之间设置有空间; 在沟道长度的一部分上设置在所述栅绝缘层上的微晶半导体层; 半导体层，设置在所述栅极绝缘层上以至少覆盖所述微晶半导体层; 以及设置在所述半导体层和所述一对杂质半导体层之间的非晶半导体层。在半导体层中存在减少硅的配位数并产生悬挂键的杂质元素。

74. 发明申请

US20110147744A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20110147744A1
公开(公告)日：2011-06-23
申请号：US12972859
申请日：2010-12-20
申请人： Yasuhiro Jinbo , Hideomi Suzawa , Hiromichi Godo , Shinya Sasagawa
发明人： Yasuhiro Jinbo , Hideomi Suzawa , Hiromichi Godo , Shinya Sasagawa
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L29/66765 , H01L29/786 , H01L29/78663
摘要： An object is to increase the on-state current of a thin film transistor. A solution is to provide a projection in a back-channel portion of the thin film transistor. The projection is provided so as to be off a tangent in the back-channel portion between a source or a drain and a channel formation region. With the projection, a portion where electric charge is trapped and a path of the on-state current can be apart from each other, so that the on-state current can be increased. The shape of a side surface of the back-channel portion may be curved, or may be represented as straight lines in a cross section. Further, a method for forming such a shape by performing one etching step is provided.
摘要翻译：目的是增加薄膜晶体管的导通电流。解决方案是在薄膜晶体管的后通道部分中提供投影。突起被设置成在源极或漏极之间的后部沟道部分和沟道形成区域之间切断切线。通过投影，电荷被捕获的部分和导通状态电流的路径可以彼此分开，从而可以增加导通电流。背沟道部分的侧表面的形状可以是弯曲的，或者可以在横截面中表示为直线。此外，提供了通过执行一个蚀刻步骤来形成这种形状的方法。

75. 发明授权

US07833845B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07833845B2
公开(公告)日：2010-11-16
申请号：US12222547
申请日：2008-08-12
申请人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Furuno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Furuno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： C23C16/515 , C23C16/509 , H01L27/1288 , H01L29/04 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.
摘要翻译：本发明的目的是提供一种在大面积基板上具有优良质量的微晶半导体膜的制造方法。在栅电极上形成栅极绝缘膜之后，为了提高在初始阶段形成的微晶半导体膜的质量，通过提供具有不同频率的高频功率并且膜的下部附近产生辉光放电等离子体在第一成膜条件下形成具有栅极绝缘膜的界面，其成膜速率低，但是导致良好的膜质量。此后，在成膜速度较高的第二成膜条件下沉积膜的上部，并且还在微晶半导体膜上层叠缓冲层。

76. 发明授权

US07709337B2 Method for manufacturing SOI substrate and semiconductor device 失效
标题翻译：制造SOI衬底和半导体器件的方法
公开(公告)号：US07709337B2
公开(公告)日：2010-05-04
申请号：US12076763
申请日：2008-03-21
申请人： Yasuhiro Jinbo , Hironobu Shoji , Hideto Ohnuma , Shunpei Yamazaki
发明人： Yasuhiro Jinbo , Hironobu Shoji , Hideto Ohnuma , Shunpei Yamazaki
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/84 , H01L21/26506 , H01L21/76254
摘要： It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.
摘要翻译：本发明的目的是提供一种制造具有SOI层的SOI衬底的方法，该SOI衬底即使在诸如玻璃衬底或塑料衬底之类的柔性衬底使用时也可以在实际应用中以高产率使用。此外，本发明的另一个目的是提供一种以高产率制造使用这种SOI衬底的薄半导体器件的方法。当将单晶半导体衬底接合到具有绝缘表面的柔性衬底并且分离单晶半导体衬底以制造SOI衬底时，一个或两个键合表面被激活，然后柔性衬底具有绝缘表面并且单晶半导体衬底彼此附接。

77. 发明申请

US20090047761A1 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20090047761A1
公开(公告)日：2009-02-19
申请号：US12222547
申请日：2008-08-12
申请人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Furuno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Furuno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
IPC分类号： H01L21/00
CPC分类号： C23C16/515 , C23C16/509 , H01L27/1288 , H01L29/04 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.
摘要翻译：本发明的目的是提供一种在大面积基板上具有优良质量的微晶半导体膜的制造方法。在栅电极上形成栅极绝缘膜之后，为了提高在初始阶段形成的微晶半导体膜的质量，通过提供具有不同频率的高频功率并且膜的下部附近产生辉光放电等离子体在第一成膜条件下形成具有栅极绝缘膜的界面，其成膜速率低，但是导致良好的膜质量。此后，在成膜速度较高的第二成膜条件下沉积膜的上部，并且还在微晶半导体膜上层叠缓冲层。

78. 发明申请

US20090047759A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090047759A1
公开(公告)日：2009-02-19
申请号：US12222109
申请日：2008-08-01
申请人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Furuno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Sachiaki Teduka , Satoshi Toriumi , Makoto Furuno , Yasuhiro Jinbo , Koji Dairiki , Hideaki Kuwabara
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/0262 , H01L21/67207 , H01L27/1288 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78678
摘要： After a gate insulating film is formed over a gate electrode, in order to improve the quality of a microcrystalline semiconductor film which is formed in an early stage of deposition, a film near an interface with the gate insulating film is formed under a first deposition condition in which a deposition rate is low but the quality of a film to be formed is high, and then, a film is further deposited under a second deposition condition in which a deposition rate is high. Then, a buffer layer is formed to be in contact with the microcrystalline semiconductor film. Further, plasma treatment with a rare gas such as argon or hydrogen plasma treatment is performed before formation of the film under the first deposition condition for removing adsorbed water on a substrate.
摘要翻译：在栅电极上形成栅极绝缘膜之后，为了提高在沉积的早期形成的微晶半导体膜的质量，在第一沉积条件下形成与栅极绝缘膜的界面附近的膜其中沉积速率低，但是要形成的膜的质量高，然后在沉积速率高的第二沉积条件下进一步沉积膜。然后，形成与微晶半导体膜接触的缓冲层。此外，在用于除去基板上的吸附水的第一沉积条件下，在形成膜之前，进行诸如氩气或氢等离子体处理的稀有气体的等离子体处理。

79. 发明申请

US20080261379A1 Method for manufacturing SOI substrate and semiconductor device 失效
标题翻译：制造SOI衬底和半导体器件的方法
公开(公告)号：US20080261379A1
公开(公告)日：2008-10-23
申请号：US12076763
申请日：2008-03-21
申请人： Yasuhiro Jinbo , Hironobu Shoji , Hideto Ohnuma , Shunpei Yamazaki
发明人： Yasuhiro Jinbo , Hironobu Shoji , Hideto Ohnuma , Shunpei Yamazaki
IPC分类号： H01L21/322
CPC分类号： H01L21/84 , H01L21/26506 , H01L21/76254
摘要： It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.
摘要翻译：本发明的目的是提供一种制造具有SOI层的SOI衬底的方法，该SOI衬底即使在使用诸如玻璃衬底或塑料衬底的柔性衬底时，也可以在实际应用中以高产率使用。此外，本发明的另一个目的是提供一种以高产率制造使用这种SOI衬底的薄半导体器件的方法。当将单晶半导体衬底接合到具有绝缘表面的柔性衬底并且分离单晶半导体衬底以制造SOI衬底时，一个或两个键合表面被激活，然后柔性衬底具有绝缘表面并且单晶半导体衬底彼此附接。

80. 发明申请

US20070295973A1 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070295973A1
公开(公告)日：2007-12-27
申请号：US11705828
申请日：2007-02-14
申请人： Yasuhiro Jinbo , Masafumi Morisue , Hajime Kimura , Shunpei Yamazaki
发明人： Yasuhiro Jinbo , Masafumi Morisue , Hajime Kimura , Shunpei Yamazaki
IPC分类号： H01L33/00 , H01L21/30
CPC分类号： H01L27/1266 , G02F1/133305 , G02F1/133603 , H01L21/6835 , H01L27/1214 , H01L27/153 , H01L33/0079 , H01L33/62 , H01L51/003 , H01L2221/68318 , H01L2221/68386
摘要： The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.
摘要翻译：本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质被穿过第一衬底的光照射，并且元件层从第一衬底剥离。

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