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1. 发明授权

US08399329B2 Method for manufacturing SOI substrate and semiconductor device 有权
公开(公告)号：US08399329B2
公开(公告)日：2013-03-19
申请号：US12722684
申请日：2010-03-12
申请人： Yasuhiro Jinbo , Hironobu Shoji , Hideto Ohnuma , Shunpei Yamazaki
发明人： Yasuhiro Jinbo , Hironobu Shoji , Hideto Ohnuma , Shunpei Yamazaki
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/84 , H01L21/26506 , H01L21/76254
摘要： It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.

2. 发明授权

US07709337B2 Method for manufacturing SOI substrate and semiconductor device 失效
标题翻译：制造SOI衬底和半导体器件的方法
公开(公告)号：US07709337B2
公开(公告)日：2010-05-04
申请号：US12076763
申请日：2008-03-21
申请人： Yasuhiro Jinbo , Hironobu Shoji , Hideto Ohnuma , Shunpei Yamazaki
发明人： Yasuhiro Jinbo , Hironobu Shoji , Hideto Ohnuma , Shunpei Yamazaki
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L21/84 , H01L21/26506 , H01L21/76254
摘要： It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.
摘要翻译：本发明的目的是提供一种制造具有SOI层的SOI衬底的方法，该SOI衬底即使在诸如玻璃衬底或塑料衬底之类的柔性衬底使用时也可以在实际应用中以高产率使用。此外，本发明的另一个目的是提供一种以高产率制造使用这种SOI衬底的薄半导体器件的方法。当将单晶半导体衬底接合到具有绝缘表面的柔性衬底并且分离单晶半导体衬底以制造SOI衬底时，一个或两个键合表面被激活，然后柔性衬底具有绝缘表面并且单晶半导体衬底彼此附接。

3. 发明申请

US20080261379A1 Method for manufacturing SOI substrate and semiconductor device 失效
标题翻译：制造SOI衬底和半导体器件的方法
公开(公告)号：US20080261379A1
公开(公告)日：2008-10-23
申请号：US12076763
申请日：2008-03-21
申请人： Yasuhiro Jinbo , Hironobu Shoji , Hideto Ohnuma , Shunpei Yamazaki
发明人： Yasuhiro Jinbo , Hironobu Shoji , Hideto Ohnuma , Shunpei Yamazaki
IPC分类号： H01L21/322
CPC分类号： H01L21/84 , H01L21/26506 , H01L21/76254
摘要： It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible substrate such as a glass substrate or a plastic substrate is used. Further, it is another object of the present invention to provide a method for manufacturing a thin semiconductor device using such an SOI substrate with high yield. When a single-crystal semiconductor substrate is bonded to a flexible substrate having an insulating surface and the single-crystal semiconductor substrate is separated to manufacture an SOI substrate, one or both of bonding surfaces are activated, and then the flexible substrate having an insulating surface and the single-crystal semiconductor substrate are attached to each other.
摘要翻译：本发明的目的是提供一种制造具有SOI层的SOI衬底的方法，该SOI衬底即使在使用诸如玻璃衬底或塑料衬底的柔性衬底时，也可以在实际应用中以高产率使用。此外，本发明的另一个目的是提供一种以高产率制造使用这种SOI衬底的薄半导体器件的方法。当将单晶半导体衬底接合到具有绝缘表面的柔性衬底并且分离单晶半导体衬底以制造SOI衬底时，一个或两个键合表面被激活，然后柔性衬底具有绝缘表面并且单晶半导体衬底彼此附接。

4. 发明授权

US09012949B2 Light-emitting module, light-emitting device, and method for manufacturing the light-emitting module 有权
标题翻译：发光模块，发光装置以及发光模块的制造方法
公开(公告)号：US09012949B2
公开(公告)日：2015-04-21
申请号：US13543715
申请日：2012-07-06
申请人： Shunpei Yamazaki , Satoshi Seo , Hideto Ohnuma , Hajime Kimura , Yasuhiro Jinbo
发明人： Shunpei Yamazaki , Satoshi Seo , Hideto Ohnuma , Hajime Kimura , Yasuhiro Jinbo
IPC分类号： H01L33/36 , H01L51/52 , H01L27/32
CPC分类号： H01L51/5246 , G02F1/133514 , G02F1/133603 , G02F1/1339 , G02F1/1368 , H01L27/322 , H01L27/3246 , H01L51/0096 , H01L51/524 , H01L51/5253 , H01L2251/5315
摘要： A highly reliable light-emitting module or light-emitting device is provided. A method for manufacturing a highly reliable light-emitting module is provided. The light-emitting module includes, between a first substrate and a second substrate, a first electrode provided over the first substrate, a second electrode provided over the first electrode with a layer containing a light-emitting organic compound interposed therebetween, and a sacrifice layer formed using a liquid material provided over the second electrode.
摘要翻译：提供了高度可靠的发光模块或发光装置。提供一种用于制造高度可靠的发光模块的方法。发光模块在第一基板和第二基板之间包括设置在第一基板上的第一电极，设置在第一电极上的第二电极，其间插入有发光有机化合物的层，牺牲层使用设置在第二电极上的液体材料形成。

5. 发明申请

US20130009194A1 LIGHT-EMITTING MODULE, LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE LIGHT-EMITTING MODULE 有权
公开(公告)号：US20130009194A1
公开(公告)日：2013-01-10
申请号：US13543715
申请日：2012-07-06
申请人： Shunpei Yamazaki , Satoshi Seo , Hideto Ohnuma , Hajime Kimura , Yasuhiro Jinbo
发明人： Shunpei Yamazaki , Satoshi Seo , Hideto Ohnuma , Hajime Kimura , Yasuhiro Jinbo
IPC分类号： H01L33/36 , H01L33/52
CPC分类号： H01L51/5246 , G02F1/133514 , G02F1/133603 , G02F1/1339 , G02F1/1368 , H01L27/322 , H01L27/3246 , H01L51/0096 , H01L51/524 , H01L51/5253 , H01L2251/5315
摘要： A highly reliable light-emitting module or light-emitting device is provided. A method for manufacturing a highly reliable light-emitting module is provided. The light-emitting module includes, between a first substrate and a second substrate, a first electrode provided over the first substrate, a second electrode provided over the first electrode with a layer containing a light-emitting organic compound interposed therebetween, and a sacrifice layer formed using a liquid material provided over the second electrode.

6. 发明授权

US07348222B2 Method for manufacturing a thin film transistor and method for manufacturing a semiconductor device 有权
标题翻译：薄膜晶体管的制造方法及半导体装置的制造方法
公开(公告)号：US07348222B2
公开(公告)日：2008-03-25
申请号：US10878388
申请日：2004-06-29
申请人： Akihisa Shimomura , Hideto Ohnuma , Hironobu Shoji
发明人： Akihisa Shimomura , Hideto Ohnuma , Hironobu Shoji
IPC分类号： H01L21/84 , H01L21/00 , H01L21/331 , H01L21/205
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02672 , H01L21/2022 , H01L21/268 , H01L21/3221 , H01L27/1277 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： It is an object of the present invention to provide a method for removing the metal element from the semiconductor film which is different from the conventional gettering step for removing the metal element from the semiconductor film.In the present invention, when Ni element (Ni) is used as the metal element and a silicon-based film (referred to as a silicon film) is used as the semiconductor film, nickel silicide segregates in the ridge formed in the silicon film by irradiating the pulsed laser light. Next, etching solution of hydrofluoric acid based etchant is used to remove the nickel silicide segregated in the ridge. When the surface of the semiconductor film is rough after removing the metal element by means of etching, the laser light may be irradiated to the semiconductor film under the insert atmosphere to flatten the surface thereof.
摘要翻译：本发明的目的是提供一种从半导体膜去除金属元素的方法，该方法与用于从半导体膜去除金属元素的常规吸杂步骤不同。在本发明中，当使用Ni元素（Ni）作为金属元素，并且使用硅系膜（称为硅膜）作为半导体膜时，硅化镍在硅膜中形成的隆起中分离，照射脉冲激光。接下来，使用基于氢氟酸的蚀刻剂的蚀刻溶液来除去在脊中分离的硅化镍。当通过蚀刻去除金属元素之后半导体膜的表面粗糙时，可以在插入气氛下将激光照射到半导体膜上以使其表面变平。

7. 发明授权

US09059247B2 Method for manufacturing SOI substrate and method for manufacturing semiconductor device 有权
标题翻译：制造SOI衬底的方法和半导体器件的制造方法
公开(公告)号：US09059247B2
公开(公告)日：2015-06-16
申请号：US12076994
申请日：2008-03-26
申请人： Shunpei Yamazaki , Hideto Ohnuma
发明人： Shunpei Yamazaki , Hideto Ohnuma
IPC分类号： H01L21/30 , H01L21/762 , H01L27/12 , H01L29/66
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： A method for manufacturing an SOI substrate with favorable adherence without high-temperature heat treatment being performed in bonding, and a semiconductor device using the SOI substrate and a manufacturing method thereof are proposed. An SOI substrate and a semiconductor device can be manufactured by forming a single-crystalline silicon substrate with a thickness of 50 μm or less in which a brittle layer is formed; forming a supporting substrate having an insulating layer over a surface; activating at least one of the surfaces of the single-crystalline silicon substrate and the insulating layer by exposure to a plasma atmosphere or an ion atmosphere; and bonding the single-crystalline silicon substrate and the supporting substrate with the insulating layer interposed therebetween.
摘要翻译：在接合时进行无高温热处理的具有良好粘附性的SOI衬底的制造方法，提出了使用SOI衬底的半导体器件及其制造方法。可以通过形成其中形成有脆性层的厚度为50μm以下的单晶硅衬底来制造SOI衬底和半导体器件; 形成在表面上具有绝缘层的支撑基板; 通过暴露于等离子体气氛或离子气氛来激活单晶硅衬底和绝缘层的至少一个表面; 并且将绝缘层插入其中来接合单晶硅衬底和支撑衬底。

8. 发明授权

US08043902B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08043902B2
公开(公告)日：2011-10-25
申请号：US12512075
申请日：2009-07-30
申请人： Hideto Ohnuma , Shigeharu Monoe , Shunpei Yamazaki
发明人： Hideto Ohnuma , Shigeharu Monoe , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L27/1214 , H01L27/124 , H01L27/1288 , H01L29/66757 , H01L29/78624
摘要： The present invention provides a TFT including at least one LDD region in a self-alignment manner without forming a sidewall spacer and increasing the number of manufacturing steps. A photomask or a reticle provided with an assist pattern that is formed of a diffraction grating pattern or a semi-transmitting film and has a function of reducing light intensity is employed in a photolithography step of forming a gate electrode, an asymmetrical resist pattern having a region with a thick thickness and a region with a thickness thinner than that of the above region on one side is formed, a gate electrode having a stepped portion is formed, and an LDD region is formed in a self-alignment manner by injecting an impurity element to the semiconductor layer through the region with a thin thickness of the gate electrode.
摘要翻译：本发明提供一种TFT，其以自对准方式提供至少一个LDD区域，而不形成侧壁间隔物并增加制造步骤的数量。在形成栅电极的光刻步骤中使用具有由衍射光栅图案或半透射膜形成的辅助图案并具有降低光强度的功能的光掩模或掩模版，具有形成厚度厚的区域和具有比一面上述区域的厚度薄的区域，形成具有台阶部分的栅电极，并且通过注入杂质以自对准方式形成LDD区域元件通过具有薄的栅电极厚度的区域到半导体层。

9. 发明授权

US08030659B2 Semiconductor device and fabrication method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08030659B2
公开(公告)日：2011-10-04
申请号：US12824747
申请日：2010-06-28
申请人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado , Hideto Ohnuma
发明人： Shunpei Yamazaki , Satoshi Murakami , Jun Koyama , Yukio Tanaka , Hidehito Kitakado , Hideto Ohnuma
IPC分类号： H01L27/14
CPC分类号： G02F1/1368 , G02F1/133345 , G02F1/13454 , G02F1/136227 , G02F1/136286 , G02F2201/123 , G02F2202/104 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L27/3272 , H01L27/3276 , H01L29/458 , H01L29/78621 , H01L29/78627 , H01L29/78675 , H01L2029/7863 , H01L2227/323
摘要： This invention provides a semiconductor device having high operation performance and high reliability. An LDD region 707 overlapping with a gate wiring is arranged in an n-channel TFT 802 forming a driving circuit, and a TFT structure highly resistant to hot carrier injection is achieved. LDD regions 717, 718, 719 and 720 not overlapping with a gate wiring are arranged in an n-channel TFT 804 forming a pixel unit. As a result, a TFT structure having a small OFF current value is achieved. In this instance, an element belonging to the Group 15 of the Periodic Table exists in a higher concentration in the LDD region 707 than in the LDD regions 717, 718, 719 and 720.
摘要翻译：本发明提供一种具有高操作性能和高可靠性的半导体器件。在形成驱动电路的n沟道TFT 802中配置与栅极配线重叠的LDD区域707，能够实现高耐热载流子注入的TFT结构。不与栅极布线重叠的LDD区域717,718,719和720被布置在形成像素单元的n沟道TFT 804中。结果，实现了具有小的截止电流值的TFT结构。在这种情况下，属于周期表第15族的元素在LDD区707中比在LDD区717,718,719和720中的浓度更高。

10. 发明授权

US07943414B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07943414B2
公开(公告)日：2011-05-17
申请号：US12512141
申请日：2009-07-30
申请人： Akihisa Shimomura , Hideto Ohnuma , Junpei Momo , Shunpei Yamazaki
发明人： Akihisa Shimomura , Hideto Ohnuma , Junpei Momo , Shunpei Yamazaki
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46 , H01L21/36 , H01L21/20
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/02675 , H01L21/2007
摘要： An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.
摘要翻译：要公开的本发明的实施例的目的在于，即使通过用激光束照射来修复单晶半导体层的结晶度，也可以防止激光照射中的单晶半导体层中的氧被吸收; 并且在激光照射之前比较激光照射之后，使半导体层中的氧浓度基本相等或降低。用激光束照射通过接合而设置在基底基板上的单晶半导体层，从而修复单晶半导体层的结晶性。激光照射在还原气氛或惰性气氛下进行。

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