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71. 发明授权

US06744800B1 Method and structure for nitride based laser diode arrays on an insulating substrate 有权
标题翻译：绝缘基板上基于氮化物的激光二极管阵列的方法和结构
公开(公告)号：US06744800B1
公开(公告)日：2004-06-01
申请号：US09223112
申请日：1998-12-30
申请人： Michael A. Kneissl , Thomas L. Paoli , David P. Bour , Noble M. Johnson , Jack Walker
发明人： Michael A. Kneissl , Thomas L. Paoli , David P. Bour , Noble M. Johnson , Jack Walker
IPC分类号： H01S500
CPC分类号： H01L21/6835 , B82Y20/00 , H01L21/2007 , H01L27/153 , H01L33/0079 , H01L2221/68359 , H01L2221/68368 , H01L2224/83192 , H01L2224/83895 , H01L2924/01079 , H01S5/0217 , H01S5/34333 , H01S5/4025 , H01S5/4031
摘要： A method and structure for nitride based laser diode arrays on an insulating substrate is described. Various contact layouts are used to reduce electrical and thermal crosstalk between laser diodes in the array. A channel structure is used to make a surface emitting laser diode while maintaining a simple contact structure. Buried layers are used to provide a compact and low crosstalk contact structure for the laser diode array.
摘要翻译：描述了绝缘基板上的基于氮化物的激光二极管阵列的方法和结构。使用各种接触布局来减少阵列中的激光二极管之间的电和热串扰。通道结构用于制造表面发射激光二极管，同时保持简单的接触结构。掩埋层用于为激光二极管阵列提供紧凑且低串扰的接触结构。

72. 发明授权

US06730944B1 InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP 失效
标题翻译：基于InP的高温激光器，具有InAsP量子阱层和Gax（ALIn）1-xP的阻挡层
公开(公告)号：US06730944B1
公开(公告)日：2004-05-04
申请号：US10354276
申请日：2003-01-30
申请人： Ashish Tandon , Ying-Ian Chang , Scott W. Corzine , David P. Bour , Michael R. T. Tan
发明人： Ashish Tandon , Ying-Ian Chang , Scott W. Corzine , David P. Bour , Michael R. T. Tan
IPC分类号： H01L2906
CPC分类号： B82Y20/00 , H01S5/3406 , H01S5/3407 , H01S5/34306 , H01S5/3434 , H01S5/3436 , H01S2302/00
摘要： The invention provides a laser structure that operates at a wavelength of 1.3 &mgr;m and at elevated temperatures and a method of making same. The laser structure includes a quantum well layer of InAsP. The quantum well layer is sandwiched between a first barrier layer and a second barrier layer. Each barrier layer exhibits a higher bandgap energy than the quantum well layer. Also, each barrier layer comprises Gax(AlIn)1−xP in which x 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure.
摘要翻译：本发明提供了在1.3μm波长和高温下工作的激光结构及其制造方法。激光器结构包括InAsP的量子阱层。量子阱层夹在第一阻挡层和第二阻挡层之间。每个阻挡层表现出比量子阱层更高的带隙能量。此外，每个阻挡层包括其中x 0的Gax（AlIn）1-xP。该材料具有比诸如InGaP的常规阻挡层材料更高的带隙能量。所产生的更大的导带不连续性导致改善的高温性能而不增加激光器结构的阈值电流。

73. 发明授权

US06570898B2 Structure and method for index-guided buried heterostructure AlGalnN laser diodes 有权
公开(公告)号：US06570898B2
公开(公告)日：2003-05-27
申请号：US09408458
申请日：1999-09-29
申请人： David P. Bour , Michael A. Kneissl , Linda T. Romano , Thomas L. Paoli , Christian G. Van de Walle
发明人： David P. Bour , Michael A. Kneissl , Linda T. Romano , Thomas L. Paoli , Christian G. Van de Walle
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/2004 , H01S5/2275 , H01S2301/18 , H01S2304/00
摘要： An index-guided buried heterostructure AlGaInN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.

74. 发明授权

US06288417B1 Light-emitting devices including polycrystalline gan layers and method of forming devices 有权
标题翻译：包括多晶层的发光器件和形成器件的方法
公开(公告)号：US06288417B1
公开(公告)日：2001-09-11
申请号：US09226114
申请日：1999-01-07
申请人： Norbert H. Nickel , Christian G. Van de Walle , David P. Bour , Ping Mei
发明人： Norbert H. Nickel , Christian G. Van de Walle , David P. Bour , Ping Mei
IPC分类号： H01L3300
CPC分类号： H01L33/18 , H01L33/32
摘要： Polycrystalline group III-nitride semiconductor materials such as GaN and alloys of GaN and other group III-nitrides are deposited as layers on polycrystalline and non-crystalline substrates. The polycrystalline GaN layers can be formed by solid-phase crystallizing amorphous material or by directly depositing polycrystalline material on the substrates. The polycrystalline GaN material can be incorporated in light-emitting devices such as light-emitting diodes (LEDs). LED arrays can be formed on large-area substrates to provide large-area, full-color active-matrix displays.
摘要翻译：多晶III族氮化物半导体材料如GaN和GaN和其他III族氮化物的合金作为层沉积在多晶和非晶体衬底上。多晶GaN层可以通过固相结晶的非晶材料或通过在基片上直接沉积多晶材料来形成。多晶GaN材料可以结合在诸如发光二极管（LED）的发光器件中。 LED阵列可以形成在大面积基板上，以提供大面积的全色有源矩阵显示器。

75. 发明授权

US06163557A Fabrication of group III-V nitrides on mesas 失效
标题翻译：在台面上制备III-V族氮化物
公开(公告)号：US06163557A
公开(公告)日：2000-12-19
申请号：US82154
申请日：1998-05-21
申请人： Clarence J. Dunnrowicz , Linda T. Romano , David P. Bour
发明人： Clarence J. Dunnrowicz , Linda T. Romano , David P. Bour
IPC分类号： C30B25/02 , H01L21/20 , H01L33/00 , H01S5/02 , H01S5/323 , H01L31/0312 , H01S5/00
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/007 , H01S5/0207 , H01S5/0213 , H01S5/0217 , H01S5/3202 , H01S5/32341
摘要： Group III-V nitride films are fabricated on mesas patterned either on substrates such as sapphire substrates, or on mesas patterned on group III-V nitride layers grown on substrates. The mesas provide reduced area surfaces for epitaxially growing group III-V nitride films, to reduce thermal film stresses in the films to reduce cracking. The surfaces of the mesas on which the films are grown are dimensioned and oriented to reduce the number of thin film crack planes that can grow on the mesas. Further cracking reduction in the films can be achieved by thinning the substrate to form membranes. The reduced substrate thickness at the membranes reduces the thermal expansion mismatch tensile stress in the films. The mesas can reduce or eliminate the occurrence of cracks in GaN or AlGaN epitaxial films grown on the mesas, for percentages of aluminum in the AlGaN films of up to about 18%. The improved group III-V nitride films can be used in optoelectronic devices including LEDs and edge and surface emitting laser diodes.
摘要翻译： III-V族氮化物薄膜制造在图案化的基板上，例如蓝宝石衬底上，或者在生长在衬底上的III-V族氮化物层上图案化的台面上。台面为外延生长的III-V族氮化物薄膜提供减少的面积表面，以减少薄膜中的热薄膜应力以减少开裂。其上生长膜的台面的表面的尺寸和尺寸被定向以减少可以在台面上生长的薄膜裂纹平面的数量。膜的进一步裂解减少可以通过使基材变薄以形成膜来实现。在薄膜处降低的基底厚度降低了薄膜中的热膨胀失配拉伸应力。台面可以减少或消除在台面上生长的GaN或AlGaN外延膜中的裂纹的发生，AlGaN膜中铝的百分比高达约18％。改进的III-V族III族氮化物薄膜可用于包括LED和边缘和表面发射激光二极管在内的光电器件。

76. 发明授权

US6090300A Ion-implantation assisted wet chemical etching of III-V nitrides and alloys 失效
标题翻译： III-V氮化物和合金的离子注入辅助湿化学蚀刻
公开(公告)号：US6090300A
公开(公告)日：2000-07-18
申请号：US84223
申请日：1998-05-26
申请人： Jack Walker , Werner Goetz , Noble M. Johnson , David P. Bour , Thomas L. Paoli
发明人： Jack Walker , Werner Goetz , Noble M. Johnson , David P. Bour , Thomas L. Paoli
IPC分类号： H01L33/00 , H01S5/20 , H01S5/323 , H01L21/3115 , B44C1/22
CPC分类号： H01L33/007 , H01S5/2081 , H01S5/32341
摘要： A process for etching III-V nitride and III-V nitride alloy materials first implants selected regions of the materials with ions and then selectively etches the implanted regions in an etching liquid, such as an aqueous base. The etch depth is controlled by the energy, mass and dose of the implanted ions.
摘要翻译：蚀刻III-V族氮化物和III-V族氮化物合金材料的方法首先用离子注入材料的选定区域，然后选择性地蚀刻蚀刻液体（例如碱水溶液）中的注入区域。蚀刻深度由注入离子的能量，质量和剂量控制。

77. 发明授权

US5832019A Index guided semiconductor laser biode with shallow selective IILD 失效
标题翻译：具有浅选择性IILD的折射率引导半导体激光生物
公开(公告)号：US5832019A
公开(公告)日：1998-11-03
申请号：US345108
申请日：1994-11-28
申请人： Thomas L. Paoli , Robert L. Thornton , David P. Bour , David W. Treat
发明人： Thomas L. Paoli , Robert L. Thornton , David P. Bour , David W. Treat
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/34 , H01S5/343 , H01S3/18
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34326 , H01S5/204 , H01S5/2059 , H01S5/22 , H01S5/3414
摘要： An index-guided semiconductor laser diode made by impurity-induced layer disordering (IILD) of GaInP and AlGaInP heterostructures. In some embodiments, prior to the IILD, wing regions flanking an active mesa region are etched down close to the active layer so that the selective IILD involves a shallow diffusion only. High-performance, index-guided (AlGa).sub.0.5 In.sub.0.5 P lasers may be fabricated with this technique, analogous to those made in the AlGaAs material system. Also described are several techniques for reducing parasitic leakage current via the IILD regions, which include methods for providing p-n junctions or high band gap materials to reduce the parasitic leakage. In other embodiments, a planar structure is produced but with an ultra-thin upper cladding layer. Only a shallow IILD step is necessary to penetrate below the active region. Excessive out coupling and absorption losses are avoided by choosing materials that will minimize such losses, especially a pure gold metal coating as the p-contact metal.
摘要翻译：由GaInP和AlGaInP异质结构的杂质诱导层失调（IILD）制成的折射率引导半导体激光二极管。在一些实施方案中，在IILD之前，侧翼于活性台面区域的翼区域被蚀刻到接近有源层，使得选择性IILD仅涉及浅扩散。可以使用与AlGaAs材料系统中制造的那些类似的技术来制造高性能，折射率引导（AlGa）0.5In0.5P激光器。还描述了用于减少经由IILD区域的寄生漏电流的几种技术，其包括用于提供p-n结或高带隙材料以减少寄生泄漏的方法。在其他实施例中，制造平面结构，但是具有超薄上包层。只有浅层的IILD步骤才能渗入活跃区域以下。通过选择最小化这种损失的材料，特别是作为p-接触金属的纯金金属涂层，可避免过度的偶联和吸收损失。

78. 发明授权

US5812576A Loss-guided semiconductor lasers 失效
标题翻译：损耗指导半导体激光器
公开(公告)号：US5812576A
公开(公告)日：1998-09-22
申请号：US703293
申请日：1996-08-26
申请人： David P. Bour
发明人： David P. Bour
IPC分类号： H01L33/00 , H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S5/343 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4031 , H01S5/2231 , H01S5/2004 , H01S5/205 , H01S5/2206 , H01S5/32341
摘要： The present invention relates to a short-wavelength loss-guided structure using Group III-V nitride material. Specifically, waveguiding in the lateral direction is achieved by placing a high index material in close proximity to the active layer of the laser, which gives rise to outcoupling of light from the lateral waveguides. The present invention provides higher laser beam quality and simplifies the processing technology.
摘要翻译：本发明涉及使用III-V族氮化物材料的短波长损耗引导结构。具体地，通过将高折射率材料放置在靠近激光器的有源层的方式实现横向的波导，这导致来自横向波导的光的外耦合。本发明提供更高的激光束质量并简化了处理技术。

79. 发明授权

US5396508A Polarization switchable quantum well laser 失效
标题翻译：极化可切换量子阱激光器
公开(公告)号：US5396508A
公开(公告)日：1995-03-07
申请号：US948522
申请日：1992-09-22
申请人： David P. Bour , Thomas L. Paoli , David W. Treat
发明人： David P. Bour , Thomas L. Paoli , David W. Treat
IPC分类号： H01S5/00 , H01S5/028 , H01S5/06 , H01S5/062 , H01S5/065 , H01S5/10 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/18 , H01S3/102
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/028 , H01S5/0612 , H01S5/06236 , H01S5/1039 , H01S5/3403 , H01S5/3404 , H01S5/34326 , H01S5/4031
摘要： A QW diode laser whose polarization can be switched. In one embodiment, the device incorporates a tensile strained quantum well active region, whose thickness is adjusted so that the heavy hole and light hole band edges are of the same energy. Since the heavy hole transition provides TE-mode gain, while the light hole band provides mostly TM-mode gain, the resulting laser polarization will be very sensitive to the threshold carrier density. With an intracavity loss modulator in such a structure, the polarization could be switched. Other switching techniques are also described.
摘要翻译：可以切换极化的QW二极管激光器。在一个实施例中，该装置包含拉伸应变量子阱有源区，其厚度被调节，使得重孔和光孔带边缘具有相同的能量。由于重孔跃迁提供了TE模式增益，而光空穴带主要提供TM模增益，因此产生的激光偏振将对阈值载波密度非常敏感。利用这种结构的腔内损失调制器，可以切换极化。还描述了其他切换技术。

80. 发明授权

US09123533B2 Method and system for in-situ etch and regrowth in gallium nitride based devices 有权
标题翻译：在氮化镓基器件中原位蚀刻和再生长的方法和系统
公开(公告)号：US09123533B2
公开(公告)日：2015-09-01
申请号：US13571743
申请日：2012-08-10
申请人： David P. Bour , Thomas R. Prunty , Hui Nie , Madhan M. Raj
发明人： David P. Bour , Thomas R. Prunty , Hui Nie , Madhan M. Raj
IPC分类号： H01L29/66 , H01L21/02 , H01L29/20
CPC分类号： H01L29/66143 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02634 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L21/30612 , H01L21/3086 , H01L29/0619 , H01L29/2003 , H01L29/66121 , H01L29/66446 , H01L29/66462 , H01L29/868 , H01L29/872
摘要： A method of regrowing material includes providing a III-nitride structure including a masking layer and patterning the masking layer to form an etch mask. The method also includes removing, using an in-situ etch, a portion of the III-nitride structure to expose a regrowth region and regrowing a III-nitride material in the regrowth region.
摘要翻译：再生材料的方法包括提供包括掩模层的III族氮化物结构，并且图案化掩模层以形成蚀刻掩模。该方法还包括使用原位蚀刻去除III族氮化物结构的一部分以暴露再生区域并在再生长区域中再生长III族氮化物材料。

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