会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 72. 发明授权
    • Multistate triple-decker dyads in three distinct architectures for information storage applications
    • 用于信息存储应用的三种不同架构中的多层三层二层
    • US06728129B2
    • 2004-04-27
    • US10079938
    • 2002-02-19
    • Jonathan S. LindseyDavid F. BocianKarl-Heinz SchweikartWerner G. Kuhr
    • Jonathan S. LindseyDavid F. BocianKarl-Heinz SchweikartWerner G. Kuhr
    • G11C1100
    • G11C13/0014B82Y10/00G11B9/14G11B9/149G11C11/34G11C11/5664G11C13/0009G11C13/025G11C2213/77
    • This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode. The storage medium typically comprises a storage molecule that is a triple-decker sandwich heterodimer. Such dimers can provide 8 or more oxidation states and permit the storage of at least 3 bits per molecule.
    • 本发明提供了可提供高存储密度(例如,10,15bit / cm 3)的电位置可允许有效读/写的新型高密度存储器件,其提供高度的容错能力,并且 适合有效的化学合成和芯片制造。 器件本质上可锁定,缺陷容忍,并支持破坏性或非破坏性的读取周期。 在优选实施例中,该器件包括电耦合到存储介质的固定电极,该存储介质具有多种不同且可区分的氧化态,其中通过经由该存储介质从所述存储介质中添加或撤出一个或多个电子而将数据存储在所述氧化态中 电耦合电极。 存储介质通常包含作为三层三明治夹心异二聚体的储存分子。 这种二聚体可以提供8个或更多个氧化态,并允许每分子存储至少3位。