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71. 发明授权

US07742301B2 Heat dissipating assembly 失效
标题翻译：散热组件
公开(公告)号：US07742301B2
公开(公告)日：2010-06-22
申请号：US11959298
申请日：2007-12-18
申请人： Min Li , Lei Cao
发明人： Min Li , Lei Cao
IPC分类号： H05K7/20
CPC分类号： H01L23/467 , H01L23/4006 , H01L23/4093 , H01L2924/0002 , H01L2924/00
摘要： A heat dissipating assembly for dissipating heat from a plurality of electronic components, including a heat sink (10) mounted on an electronic component, a fan (40), a first holder (50), and a second holder (60). The fan has a part secured on the heat sink by the first holder that is fixed at a lateral side of the heat sink, and another part located beyond a periphery of the heat sink being secured to the heat sink by the second holder that is fixed at an opposite side of the heat sink. An airflow produced by the fan has a part blowing the heat sink to remove heat from the one of the electronic component, and another part blowing another electronic component, which is located below the another part of the fan, thus dispersing heat from the another electronic component.
摘要翻译：一种用于从多个电子部件散热的散热组件，包括安装在电子部件上的散热器（10），风扇（40），第一保持器（50）和第二保持器（60）。风扇具有固定在散热器的侧面的第一保持器固定在散热器上的部分，并且位于超过散热器周边的另一部分通过固定的第二保持器固定到散热器在散热器的相对侧。由风扇产生的气流具有吹送散热器的部分以从电子部件中的一个移除热量，另一部分吹送位于风扇的另一部分下方的另一电子部件，从而分散来自另一电子部件的热量零件。

72. 发明申请

US20100092803A1 Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus 有权
标题翻译：制造磁阻效应元件和磁记录和重放装置的方法
公开(公告)号：US20100092803A1
公开(公告)日：2010-04-15
申请号：US12585855
申请日：2009-09-25
申请人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Shuichi Murakami , Michiko Hara , Kunliang Zhang , Min Li , Erhard Schreck
发明人： Hiromi Yuasa , Hideaki Fukuzawa , Yoshihiko Fuji , Shuichi Murakami , Michiko Hara , Kunliang Zhang , Min Li , Erhard Schreck
IPC分类号： G11B5/706 , B01J19/08 , C23C16/44
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C8/36 , C23C14/5833 , C23C14/584 , C23C14/5846 , C23C14/5853 , G01R33/093 , G11B2005/3996 , H01F10/3259 , H01F10/3272 , H01F41/307
摘要： A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of hydrogen molecules, hydrogen atoms, hydrogen ions, hydrogen plasma, hydrogen radicals, deuterium molecules, deuterium atoms, deuterium ions, deuterium plasma and deuterium radicals on the film submitted to the first treatment.
摘要翻译：提供一种制造磁阻效应元件的方法。磁阻效应元件包括包括铁磁材料的第一磁性层，包括铁磁材料的第二磁性层和设置在第一磁性层和第二磁性层之间的间隔层，间隔层具有绝缘层和导电部分穿透绝缘层。该方法包括：将膜形成为间隔层的基材; 使用包含氧分子，氧原子，氧离子，氧等离子体和氧自由基中的至少一种的气体进行第一处理; 氢原子，氢离子，氢等离子体，氢原子，氘分子，氘原子，氘离子，氘离子和氘原子中的至少一种的气体进行第二次处理。。

73. 发明授权

US07697297B2 Heat dissipation device having a clip assembly 失效
标题翻译：具有夹子组件的散热装置
公开(公告)号：US07697297B2
公开(公告)日：2010-04-13
申请号：US11947091
申请日：2007-11-29
申请人： Chun-Chi Chen , Min Li , Hong-Cheng Yang
发明人： Chun-Chi Chen , Min Li , Hong-Cheng Yang
IPC分类号： H05K7/20
CPC分类号： H01L23/4093 , H01L2924/0002 , H01L2924/00
摘要： A heat dissipation device for removing heat from an electronic component mounted on a printed circuit board, includes a heat sink and a clip attaching the heat sink onto the printed circuit board. The heat sink has a rectangular base and a plurality of fins extending upwardly from the base. The fins define a receiving channel therein, which is slantwise to two opposite sides of the heat sink. The clip includes a main body placed in the receiving channel and two latching legs extending obliquely and oppositely from two opposite ends of the main body. The two latching legs are located in front of and in rear of the two opposite sides of the heat sink, respectively, and are parallel thereto.
摘要翻译：一种用于从安装在印刷电路板上的电子部件移除热量的散热装置，包括将散热器和将散热器安装到印刷电路板上的夹子。散热器具有矩形基部和从基部向上延伸的多个翅片。散热片限定了其中的接收通道，其倾斜于散热器的两个相对侧。夹子包括放置在接收通道中的主体和从主体的两个相对端倾斜地相对延伸的两个闩锁腿。两个锁定腿分别位于散热器的两个相对侧的前面和后面，并且与其平行。

74. 发明申请

US20100073827A1 TMR device with novel free layer structure 有权
标题翻译： TMR器件具有新颖的自由层结构
公开(公告)号：US20100073827A1
公开(公告)日：2010-03-25
申请号：US12284409
申请日：2008-09-22
申请人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
IPC分类号： G11B5/33
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, COBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. One embodiment is represented by (NBC/BC)n where n≧2. A second embodiment is represented by (NBC/BC)n/NBC where n≧1. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is
摘要翻译：一种TMR传感器，其包括具有由CoFeB，CoFeBM，CoB，COBM或CoBLM制成的至少一个含B（BC）层的自由层和由CoFe，CoFeM制成的多个不含B的（NBC）或CoFeLM，其中L和M是Ni，Ta，Ti，W，Zr，Hf，Tb或Nb之一。一个实施例由（NBC / BC）n表示，其中n≥2。第二实施例由（NBC / BC）n / NBC表示，其中n≥1。在每个实施例中，NBC层接触隧道势垒，并且各自具有2至8埃厚度的NBC层以与10至80埃厚的BC层交替地形成。总自由层厚度<100埃。这里描述的自由层配置能够在实现高TMR比，低磁致伸缩，低RA和低Hc值的同时实现显着的降噪（SNR增强）。

75. 发明授权

US07667970B2 Heat sink assembly for multiple electronic components 失效
标题翻译：用于多个电子元件的散热器组件
公开(公告)号：US07667970B2
公开(公告)日：2010-02-23
申请号：US11964888
申请日：2007-12-27
申请人： Wu-Jiang Ma , Min Li
发明人： Wu-Jiang Ma , Min Li
IPC分类号： H05K7/20
CPC分类号： H01L23/467 , H01L23/3672 , H01L23/4006 , H01L2924/0002 , H01L2924/00
摘要： A heat sink assembly for removing heat from two heat generating-components mounted on a printed circuit board, includes a first heat sink, a second heat sink, a plurality of poles each having a head at a top end and a double-layer spring. The first heat sink includes a base and a plurality of fins arranged on the base. The second heat sink has a first shoulder extending from a lateral side thereof. The first shoulder is disposed on the base. The double-layer spring includes an outer spring and an inner spring having a top end connected to a top end of the outer spring. One of the poles wearing the double-layer spring extends through the first shoulder and the base. The outer spring is compressed between the head of the pole and the first shoulder. The inner spring is compressed between the head of the pole and the base.
摘要翻译：一种用于从安装在印刷电路板上的两个发热元件去除热量的散热器组件，包括第一散热器，第二散热器，多个磁极，每个磁极各自具有位于顶端的磁头和双层弹簧。第一散热器包括基部和布置在基部上的多个翅片。第二散热器具有从其侧面延伸的第一肩部。第一个肩膀放在基座上。双层弹簧包括外弹簧和内弹簧，其具有连接到外弹簧顶端的顶端。穿着双层弹簧的一个极板延伸穿过第一个肩部和底部。外部弹簧在杆的头部和第一肩部之间被压缩。内部弹簧在杆的头部和底座之间被压缩。

76. 发明申请

US20090323227A1 Ta/W film as heating device for dynamic fly height adjustment 有权
标题翻译： Ta / W薄膜作为动态飞行高度调节的加热装置
公开(公告)号：US20090323227A1
公开(公告)日：2009-12-31
申请号：US12215825
申请日：2008-06-30
申请人： Min Zheng , Min Li , Chen-Jung Chien , Kowang Liu , Sung Chung
发明人： Min Zheng , Min Li , Chen-Jung Chien , Kowang Liu , Sung Chung
IPC分类号： G11B5/33
CPC分类号： G11B5/314 , G11B5/6064
摘要： A dynamic fly heater (DFH) for improved lifetime and better film uniformity is disclosed for a magnetic head. The heater has a lower amorphous Ta layer and an upper W layer to promote small grain size and reduced electro-migration. The composite film is especially advantageous for heaters greater than 1000 Angstroms thick where dR/R is difficult to control in the prior art. The DFH may be a (Ta/W)n laminate in which the Ta layers are about 30 Angstroms thick and the combined thickness of the W layers is from 400 to 1200 Angstroms. A Ta film is preferably sputter deposited with an Ar pressure of 3 to 5 mTorr and the W film is sputter deposited in the same chamber with a 3 to 20 mTorr Ar pressure. In one embodiment, a merged read/write head has one DFH in the read head and a second DFH in the write head.
摘要翻译：公开了一种用于改善寿命和更好的膜均匀性的动态飞行加热器（DFH）。加热器具有较低的非晶Ta层和上W层，以促进小晶粒尺寸和减少的电迁移。复合膜对于现有技术中dR / R难以控制的大于1000埃的加热器是特别有利的。 DFH可以是（Ta / W）n层叠体，其中Ta层的厚度约为30埃，W层的组合厚度为400至1200埃。优选以3至5mTorr的Ar压力溅射沉积Ta膜，并将W膜以3至20mTorr Ar压力溅射沉积在相同的室中。在一个实施例中，合并的读/写头在读头中具有一个DFH，在写头中具有第二DFH。

77. 发明申请

US20090279213A1 Stabilized shields for magnetic recording heads 有权
标题翻译：磁记录头稳定屏蔽
公开(公告)号：US20090279213A1
公开(公告)日：2009-11-12
申请号：US12151921
申请日：2008-05-09
申请人： Yan Wu , Glen Garfunkel , Min Li , Yuzuru Iwai , Moris Dovek
发明人： Yan Wu , Glen Garfunkel , Min Li , Yuzuru Iwai , Moris Dovek
IPC分类号： G11B5/33
CPC分类号： G11B5/3163 , G11B5/3912 , G11B5/398
摘要： A basic design is disclosed for bottom shield (S1) and top shield (S2) of the reader shields in a magnetic read-write head. The critical part of new design includes an antiferromagnetic film which pins an antiferromagnetically coupled trilayer (AFCT). The simplest embodiment for top shield, for example, would be a film sequence of FM/Ru/FM/AFM. This replaces the normal top shield design which typically comprises a ferromagnetic seed layer and a thicker plated ferromagnetic film. Processes for manufacturing these shields are also described.
摘要翻译：公开了一种读写器的屏蔽罩（S1）和屏蔽罩（S2）在磁读写头中屏蔽的基本设计。新设计的关键部分包括引导反铁磁耦合三层（AFCT）的反铁磁膜。例如，用于顶部屏蔽的最简单的实施例将是FM / Ru / FM / AFM的胶片序列。这代替通常的顶层屏蔽设计，其通常包括铁磁种子层和较厚的镀层铁磁膜。还描述了用于制造这些屏蔽的工艺。

78. 发明申请

US20090229111A1 Two step annealing process for TMR device with amorphous free layer 有权
标题翻译：具有无定形自由层的TMR器件的两步退火工艺
公开(公告)号：US20090229111A1
公开(公告)日：2009-09-17
申请号：US12075605
申请日：2008-03-12
申请人： Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Min Li
发明人： Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Min Li
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3163 , G11B5/3906 , G11C11/16 , G11C11/161 , H01L43/12 , Y10T29/49034
摘要： An annealing process for a TMR or GMR sensor having an amorphous free layer is disclosed and employs at least two annealing steps. A first anneal at a temperature T1 of 200° C. to 270° C. and for a t1 of 0.5 to 15 hours is employed to develop the pinning in the AFM and pinned layers. A second anneal at a temperature T2 of 260° C. to 400° C. where T2>T1 and t1>t2 is used to crystallize the amorphous free layer and complete the pinning. An applied magnetic field of about 8000 Oe is used during both anneal steps. The mechanism for forming a sensor with high MR and robust pinning may involve structural change in the tunnel barrier or at an interface between two of the layers in the spin valve stack. A MgO tunnel barrier and a CoFe/CoB free layer are preferred.
摘要翻译：公开了一种具有无定形自由层的TMR或GMR传感器的退火工艺，并采用了至少两个退火步骤。采用在温度T1为200〜270℃，t1为0.5〜15小时的第一次退火，在AFM和钉扎层中形成钉扎。在260℃至400℃的温度T2下进行第二次退火，其中T2> T1和t1> t2用于使无定形自由层结晶并完成钉扎。在两个退火步骤期间使用约8000Oe的施加磁场。用于形成具有高MR和鲁棒钉扎的传感器的机构可能涉及隧道势垒中的结构变化或自旋阀叠层中的两个层之间的界面处的结构变化。优选MgO隧道势垒和CoFe / CoB自由层。

79. 发明授权

US07564658B2 CoFe insertion for exchange bias and sensor improvement 有权
标题翻译： CoFe插入用于交换偏置和传感器改进
公开(公告)号：US07564658B2
公开(公告)日：2009-07-21
申请号：US10948021
申请日：2004-09-23
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li , Chyu-Jiuh Torng
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li , Chyu-Jiuh Torng
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3929 , G11B2005/3996
摘要： A GMR spin value structure with improved performance and a method for making the same is disclosed. A key feature is the incorporation of a thin ferromagnetic insertion layer such as a 5 Angstrom thick CoFe layer between a NiCr seed layer and an IrMn AFM layer. Lowering the Ar flow rate to 10 sccm for the NiCr sputter deposition and raising the Ar flow rate to 100 sccm for the IrMn deposition enables the seed layer to be thinned to 25 Angstroms and the AFM layer to about 40 Angstroms. As a result, HEX between the AFM and pinned layers increases by up to 200 Oe while the Tb is maintained at or above 250° C. When the seed/CoFe/AFM configuration is used in a read head sensor, a higher GMR ratio is observed in addition to smaller free layer coercivity (HCF), interlayer coupling (HE), and HK values.
摘要翻译：公开了具有改进性能的GMR自旋值结构及其制造方法。一个关键特征是在NiCr种子层和IrMn AFM层之间引入薄铁磁插入层，例如5埃厚的CoFe层。将Ni流速降低到10sccm，对于IrMn沉积，Ar流速提高到100sccm，使得种子层可以变薄到25埃，AFM层变成约40埃。结果，AFM和被钉扎层之间的HEX增加高达200Oe，而Tb保持在或超过250℃。当在读头传感器中使用种子/ CoFe / AFM配置时，较高的GMR比率除了较小的自由层矫顽力（HCF），层间耦合（HE）和HK值之外还观察到。

80. 发明申请

US20090165288A1 TMR device with surfactant layer on top of CoFexBy/CoFez inner pinned layer 有权
标题翻译：在CoFexBy / CoFez内部固定层顶部具有表面活性剂层的TMR器件
公开(公告)号：US20090165288A1
公开(公告)日：2009-07-02
申请号：US12321883
申请日：2009-01-27
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： G11B5/127
CPC分类号： H01L43/08 , B82Y40/00 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/303 , H01L43/12 , Y10T29/49032 , Y10T29/49034 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49067
摘要： A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFeXBY/CoFeZ wherein x=0 to 70 atomic %, y=0 to 30 atomic %, and z=0 to 100 atomic %. The OSL is formed by treating the CoFeZ layer with oxygen plasma. The AlOx tunnel barrier has improved uniformity of about 2% across a 6 inch wafer and can be formed from an Al layer as thin as 5 Angstroms. As a result, the Hin value can be decreased by ⅓ to about 32 Oe. A dR/R of 25% and a RA of 3 ohm-cm2 have been achieved for TMR read head applications.
摘要翻译：通过在底部自旋阀配置中的钉扎层和AlOx隧道势垒层之间插入氧表面活性剂层（OSL）来制造高性能TMR元件。钉扎层优选具有带外部被钉扎层，Ru耦合层和由CoFeXBY / CoFeZ组成的内部钉扎层的SyAP构型，其中x = 0至70原子％，y = 0至30原子％，z = 0 至100原子％。 OSL通过用氧等离子体处理CoFeZ层而形成。 AlOx隧道势垒在6英寸晶片上提高了约2％的均匀性，并且可以由薄至5埃的Al层形成。因此，Hin值可以减少1/3至约32 Oe。对于TMR读头应用，已经实现了25％的dR / R和3ohm-cm 2的RA。

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