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1. 发明申请

US20080260943A1 Process for composite free layer in CPP GMR or TMR device 有权
标题翻译： CPP GMR或TMR装置中复合自由层的工艺
公开(公告)号：US20080260943A1
公开(公告)日：2008-10-23
申请号：US12214503
申请日：2008-06-19
申请人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , Y10T29/49044 , Y10T428/11 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129
摘要： The conventional free layer in a CPP GMR or TMR read head has been replaced by a tri-layer laminate comprising Co rich CoFe, moderately Fe rich NiFe, and heavily Fe rich NiFe. The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is described.
摘要翻译： CPP GMR或TMR读取头中的常规自由层已经被包含富钴CoFe，中等富Fe的NiFe和大量富Fe NiFe的三层层压体所代替。结果是具有比现有技术的装置更高的MR比的改进的装置，同时仍然保持自由层柔软性和可接受的磁致伸缩。描述了用于制造该装置的方法。

2. 发明授权

US08105703B2 Process for composite free layer in CPP GMR or TMR device 有权
标题翻译： CPP GMR或TMR装置中复合自由层的工艺
公开(公告)号：US08105703B2
公开(公告)日：2012-01-31
申请号：US12214503
申请日：2008-06-19
申请人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , Y10T29/49044 , Y10T428/11 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129
摘要： The conventional free layer in a CPP GMR or TMR read head has been replaced by a tri-layer laminate comprising Co rich CoFe, moderately Fe rich NiFe, and heavily Fe rich NiFe. The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is described.
摘要翻译： CPP GMR或TMR读取头中的常规自由层已经被包含富钴CoFe，中等富Fe的NiFe和大量富Fe NiFe的三层层压体所代替。结果是具有比现有技术的装置更高的MR比的改进的装置，同时仍然保持自由层柔软性和可接受的磁致伸缩。描述了用于制造该装置的方法。

3. 发明授权

US07390530B2 Structure and process for composite free layer in CPP GMR device 失效
标题翻译： CPP GMR装置中复合自由层的结构与工艺
公开(公告)号：US07390530B2
公开(公告)日：2008-06-24
申请号：US10999826
申请日：2004-11-30
申请人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： B05D5/12
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , Y10T29/49044 , Y10T428/11 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129
摘要： The conventional free layer in a CPP GMR read head has been replaced by a tri-layer laminate comprising Co rich CoFe, moderately Fe rich NiFe, and heavily Fe rich NiFe. The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.
摘要翻译： CPP GMR读取头中的常规自由层已经被包含Co富CoFe，适度富Fe的NiFe和大量富Fe NiFe的三层层压体所代替。结果是具有比现有技术的装置更高的MR比的改进的装置，同时仍然保持自由层柔软性和可接受的磁致伸缩。还描述了用于制造该装置的方法。

4. 发明授权

US07564658B2 CoFe insertion for exchange bias and sensor improvement 有权
标题翻译： CoFe插入用于交换偏置和传感器改进
公开(公告)号：US07564658B2
公开(公告)日：2009-07-21
申请号：US10948021
申请日：2004-09-23
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li , Chyu-Jiuh Torng
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li , Chyu-Jiuh Torng
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3929 , G11B2005/3996
摘要： A GMR spin value structure with improved performance and a method for making the same is disclosed. A key feature is the incorporation of a thin ferromagnetic insertion layer such as a 5 Angstrom thick CoFe layer between a NiCr seed layer and an IrMn AFM layer. Lowering the Ar flow rate to 10 sccm for the NiCr sputter deposition and raising the Ar flow rate to 100 sccm for the IrMn deposition enables the seed layer to be thinned to 25 Angstroms and the AFM layer to about 40 Angstroms. As a result, HEX between the AFM and pinned layers increases by up to 200 Oe while the Tb is maintained at or above 250° C. When the seed/CoFe/AFM configuration is used in a read head sensor, a higher GMR ratio is observed in addition to smaller free layer coercivity (HCF), interlayer coupling (HE), and HK values.
摘要翻译：公开了具有改进性能的GMR自旋值结构及其制造方法。一个关键特征是在NiCr种子层和IrMn AFM层之间引入薄铁磁插入层，例如5埃厚的CoFe层。将Ni流速降低到10sccm，对于IrMn沉积，Ar流速提高到100sccm，使得种子层可以变薄到25埃，AFM层变成约40埃。结果，AFM和被钉扎层之间的HEX增加高达200Oe，而Tb保持在或超过250℃。当在读头传感器中使用种子/ CoFe / AFM配置时，较高的GMR比率除了较小的自由层矫顽力（HCF），层间耦合（HE）和HK值之外还观察到。

5. 发明申请

US20060061915A1 CoFe insertion for exchange bias and sensor improvement 有权
标题翻译： CoFe插入用于交换偏置和传感器改进
公开(公告)号：US20060061915A1
公开(公告)日：2006-03-23
申请号：US10948021
申请日：2004-09-23
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li , Chyu-Jiuh Torng
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Min Li , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3929 , G11B2005/3996
摘要： A GMR spin value structure with improved performance and a method for making the same is disclosed. A key feature is the incorporation of a thin ferromagnetic insertion layer such as a 5 Angstrom thick CoFe layer between a NiCr seed layer and an IrMn AFM layer. Lowering the Ar flow rate to 10 sccm for the NiCr sputter deposition and raising the Ar flow rate to 100 sccm for the IrMn deposition enables the seed layer to be thinned to 25 Angstroms and the AFM layer to about 40 Angstroms. As a result, HEX between the AFM and pinned layers increases by up to 200 Oe while the Tb is maintained at or above 250° C. When the seed/CoFe/AFM configuration is used in a read head sensor, a higher GMR ratio is observed in addition to smaller free layer coercivity (HCF), interlayer coupling (HE), and HK values.
摘要翻译：公开了具有改进性能的GMR自旋值结构及其制造方法。一个关键特征是在NiCr种子层和IrMn AFM层之间引入薄铁磁插入层，例如5埃厚的CoFe层。将Ni流速降低到10sccm，对于IrMn沉积，Ar流速提高到100sccm，使得种子层可以变薄到25埃，AFM层变成约40埃。结果，AFM和被钉扎层之间的HEX增加高达200Oe，而Tb保持在或超过250℃。当在读头传感器中使用种子/ CoFe / AFM配置时，较高的GMR比率观察到除了较小的自由层矫顽力（H SUB CF），层间耦合（H SUB）和HK值之外。

6. 发明申请

US20060114621A1 Structure and process for composite free layer in CPP GMR device 失效
标题翻译： CPP GMR装置中复合自由层的结构与工艺
公开(公告)号：US20060114621A1
公开(公告)日：2006-06-01
申请号：US10999826
申请日：2004-11-30
申请人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , Y10T29/49044 , Y10T428/11 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129
摘要： The conventional free layer in a CPP GMR read head has been replaced by a tri-layer laminate comprising Co rich CoFe, moderately Fe rich NiFe, and heavily Fe rich NiFe. The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.
摘要翻译： CPP GMR读取头中的常规自由层已经被包含Co富CoFe，适度富Fe的NiFe和大量富Fe NiFe的三层层压体所代替。结果是具有比现有技术的装置更高的MR比的改进的装置，同时仍然保持自由层柔软性和可接受的磁致伸缩。还描述了用于制造该装置的方法。

7. 发明授权

US07742261B2 Tunneling magneto-resistive spin valve sensor with novel composite free layer 有权
公开(公告)号：US07742261B2
公开(公告)日：2010-06-22
申请号：US11034114
申请日：2005-01-12
申请人： Tong Zhao , Hui-Chuan Wang , Chyu-Jiuh Torng
发明人： Tong Zhao , Hui-Chuan Wang , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , H01F10/3254 , H01F10/3281 , H01F10/3295 , H01L43/08 , Y10T428/1114
摘要： The conventional free layer in a TMR read head has been replaced by a composite of two or more magnetic layers, one of which is iron rich The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.

8. 发明申请

US20080212243A1 AP1 layer for TMR device 有权
标题翻译： AP1层用于TMR设备
公开(公告)号：US20080212243A1
公开(公告)日：2008-09-04
申请号：US12152040
申请日：2008-05-12
申请人： Tong Zhao , Chyu-Jiuh Torng , Hui-Chuan Wang
发明人： Tong Zhao , Chyu-Jiuh Torng , Hui-Chuan Wang
IPC分类号： G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3163 , G11B5/3903 , G11B5/3909 , H01F10/3272 , H01F41/303 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.
摘要翻译：通过将AP1层铺设为两层或更多层来形成具有改善的电压击穿的TMR读取头。在下一层沉积之前，每个AP1子层在短时间内暴露于低能量等离子体。这导致在其上沉积隧道势垒层的光滑表面，而不破坏完成的AP1层的表面晶体结构。

9. 发明授权

US07320169B2 Self-pinned GMR structure by annealing 失效
标题翻译：通过退火自固定GMR结构
公开(公告)号：US07320169B2
公开(公告)日：2008-01-22
申请号：US10846406
申请日：2004-05-14
申请人： Yun-Fei Li , Hui-Chuan Wang , Tong Zhao , Chyu-Jiuh Torng
发明人： Yun-Fei Li , Hui-Chuan Wang , Tong Zhao , Chyu-Jiuh Torng
IPC分类号： G11B5/31 , G11B5/39 , G11B5/147
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/3268 , H01F41/304 , Y10T29/49044
摘要： In a conventional spin valve the shunt resistance of the pinning layer reduces the overall efficiency of the device. This problem has been overcome by using IrMn for the pinning layer at a thickness of about 20 Angstroms or less. For the IrMn to be fully effective it must be subjected to a two-step anneal, first in the presence of a high field (about 10 kOe) for several hours and then in a low field (about 500 Oe) while it cools. The result, in addition to improved pinning, is the ability to do testing at the full film and full wafer levels.
摘要翻译：在传统的自旋阀中，钉扎层的分流电阻降低了器件的整体效率。通过使用IrMn作为钉扎层的约20埃或更小的厚度已经克服了这个问题。为了使IrMn完全有效，必须先进行两步退火，首先在高场（约10kOe）存在数小时，然后在低场（约500Oe）的温度下冷却。结果，除了改进钉扎之外，还可以在整个薄膜和全晶圆级别进行测试。

10. 发明申请

US20060153978A1 Tunneling magneto-resistive spin valve sensor with novel composite free layer 有权
公开(公告)号：US20060153978A1
公开(公告)日：2006-07-13
申请号：US11034113
申请日：2005-01-12
申请人： Tong Zhao , Hui-Chuan Wang , Chyu-Jiuh Torng
发明人： Tong Zhao , Hui-Chuan Wang , Chyu-Jiuh Torng
IPC分类号： B05D5/12 , B05D7/00
CPC分类号： H01F41/303 , B82Y25/00 , B82Y40/00 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01L43/10
摘要： The conventional free layer in a TMR read head has been replaced by a composite of two or more magnetic layers, one of which is iron rich The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is also described.

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