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71. 发明授权

US4855160A Method for passivating wafer 失效
标题翻译：钝化晶圆的方法
公开(公告)号：US4855160A
公开(公告)日：1989-08-08
申请号：US203563
申请日：1988-05-26
申请人： Joseph D. Luttmer , Cecil J. Davis , Patricia B. Smith , Rudy L. York
发明人： Joseph D. Luttmer , Cecil J. Davis , Patricia B. Smith , Rudy L. York
IPC分类号： H01L21/471 , H01L21/473 , H01L21/677
CPC分类号： H01L21/6779 , H01L21/471 , H01L21/473
摘要： A high pressure processing apparatus and method which is compatible with a system wherein wafers are largely transported and processed under vacuum. The pressure vessel can be extremely small, i.e. has a total pressurized volume of which almost all interior points are within one or two centimeters of one of the workpiece or wafers which may be loaded into the chamber. HgCdTe is passivated by utilizing oxygen and water vapor for oxidation or a source of sulfur for sulfidization. The wafers and the gases are heated by a heater located on the vertical walls of the process chamber.
摘要翻译：一种与其中晶片在真空下大量输送和处理的系统兼容的高压处理设备和方法。压力容器可以非常小，即具有总加压体积，其几乎所有内部点可以装载到腔室中的工件或晶片中的一个或两厘米。 HgCdTe通过利用氧气和水蒸气进行氧化而被钝化，或硫化来源被硫化。晶片和气体由位于处理室垂直壁上的加热器加热。

72. 发明授权

US4838990A Method for plasma etching tungsten 失效
标题翻译：等离子体蚀刻钨的方法
公开(公告)号：US4838990A
公开(公告)日：1989-06-13
申请号：US74450
申请日：1987-07-16
申请人： Rhett B. Jucha , Cecil J. Davis , John I. Jones
发明人： Rhett B. Jucha , Cecil J. Davis , John I. Jones
IPC分类号： C23C16/517 , C23F4/00 , H01J37/32 , H01L21/00 , H01L21/3213 , H01L21/677
CPC分类号： H01L21/67748 , C23C16/517 , C23F4/00 , H01J37/32339 , H01J37/32743 , H01J37/32788 , H01L21/32136 , H01L21/67069 , H01L21/67115 , H01L21/67751 , H01J2237/022 , H01J2237/184 , H01J2237/3345
摘要： A process wherein a thin film metal (e.g. tungsten) is anisotropically etched under plasma bombardment conditions by using a feed gas mixture which includes a fluorine source (such as SF.sub.6) plus a fluorosilane (e.g. SiF.sub.4), plus a bromine source (such as HBr), plus a weak oxygen source such as carbon monoxide. This chemistry provides anisotropic high rate fluoro-etching with good selectivity to photoresist.
摘要翻译：通过使用包括氟源（例如SF 6）加氟硅烷（例如SiF 4），加溴源（例如HBr）的原料气体混合物，在等离子体轰击条件下各向异性地蚀刻薄膜金属（例如钨）），加上弱氧源如一氧化碳。该化学提供各向异性高速氟蚀刻，对光致抗蚀剂具有良好的选择性。

73. 发明授权

US4687542A Vacuum processing system 失效
标题翻译：真空加工系统
公开(公告)号：US4687542A
公开(公告)日：1987-08-18
申请号：US790924
申请日：1985-10-24
申请人： Cecil J. Davis , Robert Matthews , Randall C. Hildenbrand
发明人： Cecil J. Davis , Robert Matthews , Randall C. Hildenbrand
IPC分类号： H01L21/00 , H01L21/677 , H01L21/687 , H01L21/02
CPC分类号： H01L21/67748 , H01L21/67201 , H01L21/67772 , Y10S414/136 , Y10S414/137 , Y10S414/138 , Y10S414/139 , Y10S414/141
摘要： A system for performing one semiconductor manufacturing operation or sequence of operations with reduced particulate contamination. A vacuum-tight wafer carrier, which contains numerous wafers in vacuum in a sealed box, is placed into a platform inside a vacuum load lock. The platform contains slots and protruding fingers to provide accurate registration of the position of the wafer carrier. After the load lock is pumped down, the door of the wafer carrier is opened, and a transfer arm removes wafers from the wafer carrier, in any desired order, and transfers them one by one through a port into a processing chamber.
摘要翻译：一种用于执行一种半导体制造操作或具有减少的颗粒污染的操作序列的系统。在密封箱中真空中包含许多晶片的真空密封晶片载体被放置在真空装载锁中的平台内。平台包含槽和突出的指状物，以提供晶片载体的位置的精确对准。在下载负载锁定之后，打开晶片载体的门，并且传送臂以任何所需的顺序从晶片载体上移除晶片，并通过端口将它们一个接一个地传送到处理室中。

74. 发明授权

US4659413A Automated single slice cassette load lock plasma reactor 失效
标题翻译：自动单片盒装载锁定等离子体反应堆
公开(公告)号：US4659413A
公开(公告)日：1987-04-21
申请号：US664448
申请日：1984-10-24
申请人： Cecil J. Davis , John E. Spencer , Randall E. Johnson , Rhett B. Jucha , Frederick W. Brown , Stanford P. Kohan
发明人： Cecil J. Davis , John E. Spencer , Randall E. Johnson , Rhett B. Jucha , Frederick W. Brown , Stanford P. Kohan
IPC分类号： H01J37/18 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01J37/185
摘要： A plasma etch system that processes one slice at a time is disclosed. The system is comprised of an entry loadlock, an exit loadlock, a main chamber, vacuum pumps, RF power supply, RF matching network, a heat exchanger, throttle valve and pressure control gas flow distribution and a microprocessor controller. A multiple slice cassette full of slices is housed in the entry load lock and after pumping to process pressure, a single slice at a time is moved by an articulated arm from the cassette through an isolation gate to the main process chamber. The slice is etched and removed from the main process chamber through a second isolation gate by a second articulated arm to a cassette in the exit loadlock. The process is repeated until all semiconductor wafers have been etched. The cassette loadlock system is able to evacuate a whole cassette of semiconductor wafers for processing which lowers the particulate environment for the slices and, provides a more stable environment for the slices by removal of moisture and preventing static discharges and additionally provides a safety feature that protects the operators from harsh or toxic gases that are traditionally used in semiconductor type plasma reactor.
摘要翻译：公开了一次处理一个片的等离子体蚀刻系统。该系统包括入口负载锁，出口负载锁，主室，真空泵，RF电源，RF匹配网络，热交换器，节流阀和压力控制气体流量分配以及微处理器控制器。充满切片的多切片盒被容纳在进入加载锁中，并且在泵送处理压力之后，一次一个切片由关节臂从盒通过隔离门移动到主处理室。该切片通过第二隔离门从主处理室被蚀刻并从第二铰接臂移除到出口加载锁中的盒。重复该过程，直到所有半导体晶片被蚀刻。盒式负载锁定系统能够抽出整个半导体晶片盒进行处理，这降低了切片的颗粒环境，并且通过去除湿气并防止静电放电为切片提供更稳定的环境，并且另外提供了保护传统上用于半导体等离子体反应器的恶劣或有毒气体的操作者。

75. 发明授权

US4654106A Automated plasma reactor 失效
标题翻译：自动等离子体反应器
公开(公告)号：US4654106A
公开(公告)日：1987-03-31
申请号：US663901
申请日：1984-10-22
申请人： Cecil J. Davis , Randall E. Johnson , John E. Spencer
发明人： Cecil J. Davis , Randall E. Johnson , John E. Spencer
IPC分类号： H01J37/32 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01J37/32
摘要： A plasma etch system that processes one slice at a time is disclosed. The system is comprised of an entry loadlock, an exit loadlock, a main chamber, vacuum pumps, RF power supply, RF matching network, a heat exchanger, throttle valve and pressure control gas flow distribution and a microprocessor controller. A multiple slice cassette full of slices is housed in the entry load lock and after pumping to process pressure, a single slice at a time is moved by an articulated arm from the cassette through an isolation gate to the main process chamber. The slice is etched and removed from the main process chamber through a second isolation gate by a second articulated arm to a cassette in the exit loadlock. The process is repeated until all semiconductor wafers have been etched. The cassette loadlock system is able to evacuate a whole cassette of semiconductor wafers for processing which lowers the particulate environment for the slices and, provides a more stable environment for the slices by removal of moisture and preventing static discharges and additionally provides a safety feature that protects the operators from harsh or toxic gases that are traditionally used in semiconductor type plasma reactor.
摘要翻译：公开了一次处理一个片的等离子体蚀刻系统。该系统包括入口负载锁，出口负载锁，主室，真空泵，RF电源，RF匹配网络，热交换器，节流阀和压力控制气体流量分配以及微处理器控制器。充满切片的多切片盒被容纳在进入加载锁中，并且在泵送处理压力之后，一次一个切片由关节臂从盒通过隔离门移动到主处理室。该切片通过第二隔离门从主处理室被蚀刻并从第二铰接臂移除到出口加载锁中的盒。重复该过程，直到所有半导体晶片被蚀刻。盒式负载锁定系统能够抽出整个半导体晶片盒进行处理，这降低了切片的颗粒环境，并且通过去除湿气并防止静电放电为切片提供更稳定的环境，并且另外提供了保护传统上用于半导体等离子体反应器的恶劣或有毒气体的操作者。

76. 发明授权

US06905578B1 Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure 失效
标题翻译：多层材料结构的多目标物理气相沉积的装置和方法
公开(公告)号：US06905578B1
公开(公告)日：2005-06-14
申请号：US09067143
申请日：1998-04-27
申请人： Mehrdad M. Moslehi , Cecil J. Davis , Christopher J. Mann , Dwain R. Jakubik , Ajit P. Paranjpe
发明人： Mehrdad M. Moslehi , Cecil J. Davis , Christopher J. Mann , Dwain R. Jakubik , Ajit P. Paranjpe
IPC分类号： C23C14/56 , C23C14/34 , C23C16/00
CPC分类号： C23C14/568
摘要： An apparatus and method for depositing plural layers of materials on a substrate within a single vacuum chamber allows high-throughput deposition of structures such as these for GMR and MRAM application. An indexing mechanism aligns a substrate with each of plural targets according to the sequence of the layers in the structure. Each target deposits material using a static physical-vapor deposition technique. A shutter can be interposed between a target and a substrate to block the deposition process for improved deposition control. The shutter can also preclean a target or the substrate and can also be used for mechanical chopping of the deposition process. In alternative embodiments, plural substrates may be aligned sequentially with plural targets to allow simultaneous deposition of plural structures within the single vacuum chamber. A monitoring and control device can be wed to optimize equipment state, process state, and wafer state parameters by sensing each respective state during or after the deposition process.
摘要翻译：用于在单个真空室内的衬底上沉积多层材料的装置和方法允许诸如这些结构的高通量沉积用于GMR和MRAM应用。分度机构根据结构中的层序列将衬底与多个靶中的每一个对准。每个目标使用静态物理气相沉积技术沉积材料。可以在目标和基板之间插入快门以阻止沉积工艺以改善沉积控制。快门还可以预清洁目标物或基底，并且还可用于沉积过程的机械切割。在替代实施例中，多个基板可以与多个靶顺序对准，以允许在单个真空室内同时沉积多个结构。可以通过在沉积过程中或之后感测每个相应的状态来优化设备状态，过程状态和晶片状态参数的监控和控制设备。

77. 发明授权

US06508885B1 Edge sealing structure for substrate in low-pressure processing environment 失效
标题翻译：低压处理环境中基材的边缘密封结构
公开(公告)号：US06508885B1
公开(公告)日：2003-01-21
申请号：US09563961
申请日：2000-05-03
申请人： Mehrdad M. Moslehi , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Cecil J. Davis
IPC分类号： C23C1600
CPC分类号： C23C14/50 , C23C16/4585 , Y10S414/136 , Y10S414/14 , Y10S414/141 , Y10T279/35
摘要： A low-pressure processor for processing substrates includes a chuck that engages the substrates' peripheries for purposes of clamping, sealing, and centering the substrates on chuck bodies. For accomplishing all three purposes, a mechanical clamp can be arranged with two sealing regions. One of the sealing regions seals the clamp to a chuck body or an extension of the chuck body, and another of the sealing regions engages a peripheral edge surface of a substrate for sealing the clamp to the substrate. The second sealing region includes an inclined seating surface that engages a front edge of the substrate's peripheral edge surface and divides a clamping force into a first component that presses the substrate against the chuck body and a second component that centers the substrate on the chuck body. The peripheral engagement of the substrate exposes substantially the entire front surface of the substrate to processing and exposes substantially the entire back surface of the substrate to a heat-transfer gas for enhancing thermal transfers between the substrate and the temperature-regulated chuck body.
摘要翻译：用于处理基板的低压处理器包括与基板周边接合的卡盘，用于夹紧，密封和将基板对准在卡盘体上。为了实现所有这三个目的，机械夹具可以布置有两个密封区域。一个密封区域将夹具密封到卡盘主体或卡盘主体的延伸部分，另一个密封区域与基板的周边边缘表面接合，以将夹具密封到基板。第二密封区域包括倾斜的就座表面，其与衬底的周边边缘表面的前边缘接合并且将夹紧力分成第一部件，该第一部件将衬底压靠在卡盘主体上;以及第二部件，其将衬底定位在卡盘主体上。衬底的周边接合基本上暴露了衬底的整个前表面，从而基本上将衬底的整个后表面基本上暴露于传热气体，以增强衬底和温度调节卡盘体之间的热传递。

78. 发明授权

US06221217B1 Physical vapor deposition system having reduced thickness backing plate 有权
标题翻译：物理气相沉积系统具有减小厚度的背板
公开(公告)号：US06221217B1
公开(公告)日：2001-04-24
申请号：US09205113
申请日：1998-12-03
申请人： Mehrdad M. Moslehi , Dorian Heimanson , Cecil J. Davis , Thomas R. Omstead
发明人： Mehrdad M. Moslehi , Dorian Heimanson , Cecil J. Davis , Thomas R. Omstead
IPC分类号： C23C1434
CPC分类号： H01J37/3435 , C23C14/3407 , C23C14/35 , H01J37/3408 , H01J37/3497
摘要： A magnetron sputtering system is provided that uses cooling channels in the magnetron assembly to cool the target. The magnetron sputtering system also generates low pressure region in the magnetron assembly such that the backing plate sees a pressure differential much lower than atmospheric pressure. In one embodiment, the backing plate includes a center post to support the backing plate during operation. The backing plate is reduced in thickness and provides less of a barrier to the generated magnetic field.
摘要翻译：提供磁控溅射系统，其使用磁控管组件中的冷却通道来冷却靶。磁控管溅射系统还在磁控管组件中产生低压区域，使得背板看到的压差远低于大气压。在一个实施例中，背板包括在操作期间支撑背板的中心柱。背板的厚度减小，并且对产生的磁场提供较少的屏障。

79. 发明授权

US6106682A Thin-film processing electromagnet for low-skew magnetic orientation 失效
标题翻译：用于低偏磁磁取向的薄膜加工电磁铁
公开(公告)号：US6106682A
公开(公告)日：2000-08-22
申请号：US83742
申请日：1998-05-22
申请人： Mehrdad M. Moslehi , Shiyuan Cheng , Xiangqun Chen , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Shiyuan Cheng , Xiangqun Chen , Cecil J. Davis
IPC分类号： C23C14/34 , C23C14/35 , C23C16/08 , C23C16/10 , C23C16/16 , C23C16/18 , H01F3/02 , H01F7/06 , H01F7/20
CPC分类号： C23C14/3414 , C23C14/351 , C23C16/08 , C23C16/10 , C23C16/16 , C23C16/18 , H01F7/20
摘要： An electromagnet having one or more coils wrapped around a plate-shaped core produces a uniaxial magnetic filed in the vicinity of a substrate surface for orienting a magnetic film deposited onto the substrate surface. Variations in the magnetic mass of the plate-shaped core or in the magnetic permeability of the core mass are made to reduce angular skew and to improve uniformity of the uniaxial magnetic field. The variations generally involve a reduction in magnetic mass or permeability near a center of the core with respect to a periphery of the core. Cavities of various sizes and shapes but having symmetry with a magnetic axis can be formed in the core for this purpose.
摘要翻译：具有缠绕在板状芯上的一个或多个线圈的电磁体在基板表面附近产生用于使沉积在基板表面上的磁性膜定向的单轴磁场。制成板状芯的磁性质量或芯体的磁导率的变化，以减小角偏移并提高单轴磁场的均匀性。这些变化通常涉及相对于芯的周边在芯的中心附近减小磁性质量或磁导率。为此，可以在芯中形成各种尺寸和形状但具有与磁轴对称的腔体。

80. 发明授权

US5094936A High pressure photoresist silylation process and apparatus 失效
标题翻译：高压光刻胶硅烷化工艺及装置
公开(公告)号：US5094936A
公开(公告)日：1992-03-10
申请号：US544085
申请日：1990-06-26
申请人： George R. Misium , Cesar M. Garza , Cecil J. Davis
发明人： George R. Misium , Cesar M. Garza , Cecil J. Davis
IPC分类号： G03F7/26
CPC分类号： G03F7/265
摘要： A process for silylation of positive or negative photosensitive resist layer on a semiconductor wafer after the resist layer has been exposed to radiant energy through a mask which includes introducing a silylating agent to the wafer at high pressure over 760 torr and, usually, at temperatures less than 180.degree. C. Increased pressure increases the rate of silylation, allows practical use of lower process temperatures, and, therefore, allows better process control. Also an apparatus is disclosed for applying the high pressure silylation process to a wafer.
摘要翻译：在抗蚀剂层已经通过掩模暴露于辐射能量之后，在半导体晶片上将正或负光敏抗蚀剂层甲硅烷基化的方法，其包括在760乇以上的高压下将硅烷化剂引入晶片，并且通常在较低温度超过180℃。增加的压力提高了甲硅烷基化速率，允许实际使用较低的工艺温度，因此允许更好的过程控制。公开了一种将高压甲硅烷基化方法应用于晶片的装置。

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