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71. 发明申请

US20110154964A1 METHOD AND APPARATUS FOR MAKING BODILY FLUID ABSORBENT PAD 有权
标题翻译：制造体液吸收垫的方法和装置
公开(公告)号：US20110154964A1
公开(公告)日：2011-06-30
申请号：US12524085
申请日：2009-07-21
申请人： Hidenori Sato
发明人： Hidenori Sato
IPC分类号： B26D7/27 , B26D7/14
CPC分类号： A61F13/15731 , A61F13/15699 , A61F13/15723 , A61F13/4756 , Y10T83/0429 , Y10T83/343 , Y10T156/12
摘要： In making bodily fluid absorbent pads quantity of scrapped material is reduced. A bodily fluid absorbent pad (liner) 10 has a shape symmetric in a longitudinal direction P as well as in a transverse direction Q. A dimension of the pad 10 in the transverse direction Q is larger in opposite end regions 31, 32 than in an intermediate region 33. The pad 10 is formed along opposite side edges 11a, 11b with first and second compressed lines 21, 22. Paired compression rolls 302 are used to form the first and second compressed lines 21, 22, and at least one roll constituting the paired compression rolls 302 is formed on a peripheral surface thereof with compressing units projecting from the peripheral surface. The compressing units are arranged in a circumferential direction to form one row and at least one additional row, which is adjacent to the one row in an axial direction of the roll. In each pair of the adjacent rows, there is an offset between the compressing unit in the one row and the compressing units in the other row in the circumferential direction.
摘要翻译：在制造体液吸收垫时，报废材料的数量减少。体液吸收垫（衬垫）10具有在纵向方向P以及横向方向Q上对称的形状。衬垫10在横向方向Q上的尺寸在相对端部区域31,32中比在衬垫10沿着相对的侧边缘11a，11b与第一和第二压缩线21,22形成。配对的压缩辊302用于形成第一和第二压缩线21,22，并且至少一个辊构成成对的压缩辊302在其周向表面上形成有从周面突出的压缩单元。压缩单元沿圆周方向布置以形成一排和至少一个额外的行，其在辊的轴向方向上与一行相邻。在每对相邻行中，在一行中的压缩单元与在圆周方向上的另一行中的压缩单元之间存在偏移。

72. 发明申请

US20100090307A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US20100090307A1
公开(公告)日：2010-04-15
申请号：US11997436
申请日：2006-08-25
申请人： Satoshi Moriya , Toshio Saito , Goichi Yokoyama , Tsuyoshi Fujiwara , Hidenori Sato , Nobuaki Miyakawa
发明人： Satoshi Moriya , Toshio Saito , Goichi Yokoyama , Tsuyoshi Fujiwara , Hidenori Sato , Nobuaki Miyakawa
IPC分类号： H01L29/06 , H01L21/76
CPC分类号： H01L21/76898 , H01L21/2007 , H01L21/76232 , H01L21/8221 , H01L23/481 , H01L24/94 , H01L2224/2518 , H01L2924/01004 , H01L2924/04941 , H01L2924/1305 , H01L2924/14 , H01L2924/00
摘要： A structure obtaining a desired integrated circuit by sticking together a plurality of semiconductor substrates and electrically connecting integrated circuits formed on semiconductor chips of the respective semiconductor substrates is provided, and a penetrating electrode penetrating between a main surface and a rear surface of each of the semiconductor substrates and a penetrating separation portion separating the penetrating electrode are separately arranged. Thereby, after forming an insulation trench portion for formation of the penetrating separation portion on the semiconductor substrate, a MIS·FET is formed, and then, a conductive trench portion for formation of the penetrating electrode can be formed. Therefore, element characteristics of a semiconductor device having a three-dimensional structure can be improved.
摘要翻译：提供了通过将形成在各个半导体衬底的半导体芯片上的多个半导体衬底和电连接集成电路粘合在一起而获得所需集成电路的结构，并且穿透电极穿透每个半导体衬底的主表面和后表面分离基板和分离穿透电极的穿透分离部分。因此，在半导体衬底上形成用于形成穿透分离部分的绝缘沟槽部分之后，形成MIS·FET，然后形成用于形成穿透电极的导电沟槽部分。因此，可以提高具有三维结构的半导体器件的元件特性。

73. 发明申请

US20090271027A1 TURNING MACHINE AND MACHINING METHOD BY THE SAME 有权
标题翻译：滚动机及其加工方法
公开(公告)号：US20090271027A1
公开(公告)日：2009-10-29
申请号：US12447246
申请日：2007-09-13
申请人： Hiroshi Terai , Takao Tatemi , Hidenori Sato , Hiroaki Kazama
发明人： Hiroshi Terai , Takao Tatemi , Hidenori Sato , Hiroaki Kazama
IPC分类号： B23B25/06 , G06F19/00 , B23Q17/22
CPC分类号： B23Q11/0007 , B23B25/06 , B23Q39/021 , B23Q2039/008 , G05B19/404 , G05B2219/49207 , Y10T82/10 , Y10T82/2502 , Y10T82/2514 , Y10T82/2524 , Y10T82/2541 , Y10T82/2566 , Y10T82/2568 , Y10T82/2571 , Y10T82/2597 , Y10T408/8588
摘要： The turning machine according to the present invention includes a displacement sensor (200) which measures a distance between an immobile reference point and a position of variable point which reflects the positional displacement of the tool, the immobile reference point being able to determine a relative positional correlation relating to a variable position of tools with the progress of machining of the workpiece (W) by the tool (421). In drawings the reference point is set up in the guide bush (90). And based on the measured result by the displacement sensor, the tool is moved so that the center height of the tool and the center line of the workpiece satisfy relatively the predetermined positional correlation. Accordingly, the center height deviation amount due to heat deformation and the like is corrected.
摘要翻译：根据本发明的车床包括位移传感器（200），该位移传感器测量不固定参考点与反映工具的位置位移的可变点位置之间的距离，该固定参考点能够确定相对位置通过工具（421）随着加工工件（W）的进展而关于刀具的可变位置的相关性。在图中，参考点设置在导套（90）中。并且基于位移传感器的测量结果，使刀具移动，使得刀具的中心高度和工件的中心线相对于预定的位置相关性。因此，由于热变形等引起的中心高度偏差量被校正。

74. 发明授权

US07098584B2 Deflection yoke 失效
标题翻译：偏转轭
公开(公告)号：US07098584B2
公开(公告)日：2006-08-29
申请号：US10678399
申请日：2003-10-03
申请人： Hidenori Sato , Yasuhiro Torigoe , Yuji Shima , Masahiro Kamada
发明人： Hidenori Sato , Yasuhiro Torigoe , Yuji Shima , Masahiro Kamada
IPC分类号： H01J29/70
CPC分类号： H01J29/76
摘要： A deflection yoke is used for a cathode ray tube (CRT) including a glass tube having a screen surface and a straight portion for accommodating an electron gun. The deflection yoke includes a main deflection yoke including first and second horizontal deflecting coils and first and second vertical deflecting coils, and a sub-deflection yoke provided at a side of the main deflection yoke towards the electron gun of the CRT. The first and second horizontal deflecting coils have substantially saddle shapes and includes first and second coil-connection-wire sections and first and second horizontal deflection sections, respectively. The first and second coil-connection-wire sections are wound in a direction perpendicular to a tube axis of the CRT and along the straight portion, respectively. The first and second horizontal deflection sections are located towards the screen surface from the first and the second coil-connection-wire sections, respectively. In the deflection yoke, magnetic lines emitted from a rear end of the horizontal deflecting coil towards the electron gun decreases. An induced voltage generated at the sub-deflection yoke accordingly decreases, and thus, a noise on a screen noise produced due to the induced voltage is reduced.
摘要翻译：偏转线圈用于包括具有屏幕表面的玻璃管和用于容纳电子枪的直线部分的阴极射线管（CRT）。偏转线圈包括主偏转线圈，其包括第一和第二水平偏转线圈以及第一和第二垂直偏转线圈以及设置在主偏转线圈侧朝向CRT的电子枪的副偏转线圈。第一和第二水平偏转线圈具有基本上的鞍形，并且分别包括第一和第二线圈连接线部分以及第一和第二水平偏转部分。第一和第二线圈连接线部分沿着垂直于CRT的管轴线并且沿着直线部分的方向被卷绕。第一和第二水平偏转部分分别从第一和第二线圈连接线部分朝着屏幕表面定位。在偏转线圈中，从水平偏转线圈的后端朝向电子枪发射的磁线减小。因此，在副偏转线圈处产生的感应电压相应地减小，从而降低了由于感应电压而产生的屏幕噪声上的噪声。

75. 发明授权

US07060589B2 Method for manufacturing a semiconductor integrated circuit device that includes covering the bottom of an isolation trench with spin-on glass and etching back the spin-on glass to a predetermined depth 失效
标题翻译：制造半导体集成电路器件的方法，其包括用旋涂玻璃覆盖隔离沟槽的底部并将旋涂玻璃蚀刻回预定深度
公开(公告)号：US07060589B2
公开(公告)日：2006-06-13
申请号：US11055745
申请日：2005-02-11
申请人： Hidenori Sato , Norio Suzuki , Akira Takamatsu , Hiroyuki Maruyama , Takeshi Saikawa , Katsuhiko Hotta , Hiroyuki Ichizoe
发明人： Hidenori Sato , Norio Suzuki , Akira Takamatsu , Hiroyuki Maruyama , Takeshi Saikawa , Katsuhiko Hotta , Hiroyuki Ichizoe
IPC分类号： H01L21/762
CPC分类号： H01L21/76229 , H01L21/02271 , H01L21/02282 , H01L21/3125 , H01L21/31612 , H01L27/0211 , H01L27/105 , H01L27/1052 , H01L27/10814 , H01L27/10844 , H01L27/10894
摘要： A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating film deposited by a coating method, filling a remaining depth portion of the isolation trench into which the first insulating film is filled with a second insulating film, then forming a plurality of patterns on the semiconductor substrate, filling a trench forming between the plurality of patterns up to predetermined middle position in a trench depth direction with a third insulating film deposited by a coating method, and filling a remaining portion of the trench into which the third insulating film is filled with a fourth insulating film that is more difficult to etch than the third insulating film. The method may also include the step of forming dummy patterns in a relatively large isolation region of isolation regions with relatively different planar dimensions before the first insulating film is deposited
摘要翻译：一种制造半导体集成电路器件的方法包括以下步骤：在半导体衬底的隔离区域中形成隔离沟槽，通过涂覆方法沉积的第一绝缘膜将隔离沟填充到其深度方向上的预定中间位置，用第二绝缘膜填充绝缘沟槽的剩余深度部分，然后在半导体衬底上形成多个图案，在多个图案之间填充形成沟槽直到预定中间位置的沟槽沟槽深度方向与通过涂覆方法沉积的第三绝缘膜，并且填充第三绝缘膜填充有比第三绝缘膜更难蚀刻的第四绝缘膜的沟槽的剩余部分。该方法还可以包括在第一绝缘膜沉积之前在具有相对不同的平面尺寸的隔离区的相对较大的隔离区域中形成虚拟图案的步骤

76. 发明申请

US20050237603A1 Method of manufacturing a semiconductor integrated circuit device and a semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件和半导体集成电路器件的制造方法
公开(公告)号：US20050237603A1
公开(公告)日：2005-10-27
申请号：US11149539
申请日：2005-06-10
申请人： Hidenori Sato , Norio Suzuki , Akira Takamatsu , Hiroyuki Maruyama , Takeshi Saikawa , Katsuhiko Hotta , Hiroyuki Ichizoe
发明人： Hidenori Sato , Norio Suzuki , Akira Takamatsu , Hiroyuki Maruyama , Takeshi Saikawa , Katsuhiko Hotta , Hiroyuki Ichizoe
IPC分类号： H01L21/76 , G02B17/00 , G02B21/00 , G02B23/00 , H01L21/302 , H01L21/312 , H01L21/316 , H01L21/461 , H01L21/762 , H01L21/8239 , H01L21/8242 , H01L27/02 , H01L27/10 , H01L27/105 , H01L27/108
CPC分类号： H01L21/76229 , H01L21/02271 , H01L21/02282 , H01L21/3125 , H01L21/31612 , H01L27/0211 , H01L27/105 , H01L27/1052 , H01L27/10814 , H01L27/10844 , H01L27/10894
摘要： A method for manufacturing a semiconductor integrated circuit device includes the steps of forming an isolation trench in an isolation region of a semiconductor substrate, filling the isolation trench up to predetermined middle position in its depth direction with a first insulating film deposited by a coating method, filling a remaining depth portion of the isolation trench into which the first insulating film is filled with a second insulating film, then forming a plurality of patterns on the semiconductor substrate, filling a trench forming between the plurality of patterns up to predetermined middle position in a trench depth direction with a third insulating film deposited by a coating method, and filling a remaining portion of the trench into which the third insulating film is filled with a fourth insulating film that is more difficult to etch than the third insulating film. The method may also include the step of forming dummy patters in a relatively large isolation region of isolation regions with relatively different planar dimensions before the first insulating film is deposited.
摘要翻译：一种制造半导体集成电路器件的方法包括以下步骤：在半导体衬底的隔离区域中形成隔离沟槽，通过涂覆方法沉积的第一绝缘膜将隔离沟填充到其深度方向上的预定中间位置，用第二绝缘膜填充绝缘沟槽的剩余深度部分，然后在半导体衬底上形成多个图案，在多个图案之间填充形成沟槽直到预定中间位置的沟槽沟槽深度方向与通过涂覆方法沉积的第三绝缘膜，并且填充第三绝缘膜填充有比第三绝缘膜更难蚀刻的第四绝缘膜的沟槽的剩余部分。该方法还可以包括在第一绝缘膜沉积之前在具有相对不同的平面尺寸的隔离区的相对大的隔离区域中形成伪图案的步骤。

77. 发明申请

US20050230716A1 Semiconductor integrated circuit equipment and its manufacture method 审中-公开
标题翻译：半导体集成电路设备及其制造方法
公开(公告)号：US20050230716A1
公开(公告)日：2005-10-20
申请号：US11107888
申请日：2005-04-18
申请人： Satoshi Moriya , Toshiyuki Kikuchi , Akihiko Konno , Hidenori Sato , Naoki Yamamoto , Masamichi Matsuoka , Hiraku Chakihara , Akio Nishida
发明人： Satoshi Moriya , Toshiyuki Kikuchi , Akihiko Konno , Hidenori Sato , Naoki Yamamoto , Masamichi Matsuoka , Hiraku Chakihara , Akio Nishida
IPC分类号： H01L23/522 , H01L21/336 , H01L21/768 , H01L21/8234 , H01L21/8244 , H01L27/088 , H01L27/092 , H01L27/11 , H01L29/76
CPC分类号： H01L27/11 , H01L21/823425 , H01L21/823475 , H01L27/088 , H01L27/092 , H01L29/6656
摘要： The object of the present invention is to suppress the increase of the contact resistance at the interface between the metal layer and the silicon plug in the wiring structure in which a metal layer is formed on and connected to a silicon plug. For its achievement, a lower semiconductor layer (drain) of a vertical-type MISFET is connected to an intermediate metal layer via an underlying plug composed of a polycrystalline silicon film, and a trap layer composed of a silicon nitride (TiN) film is formed on a part of the surface of the intermediate metal layer so as to surround the plug. The trap layer is formed in order to prevent an undesired high-resistance oxide layer from being formed at the interface between the plug and the intermediate metal layer.
摘要翻译：本发明的目的是为了抑制金属层与硅插头之间的界面处的接触电阻的增加，其中形成金属层并连接到硅插头的布线结构中。为了实现，垂直型MISFET的下半导体层（漏极）经由由多晶硅膜构成的下面的插塞连接到中间金属层，并且形成由氮化硅（TiN）膜构成的捕获层在中间金属层的表面的一部分上，以围绕塞子。形成陷阱层以防止在插塞和中间金属层之间的界面处形成不期望的高电阻氧化物层。

78. 发明授权

US06940404B2 Transmitter for surveillance camera, and surveillance system 失效
标题翻译：监控摄像机和监控系统发射机
公开(公告)号：US06940404B2
公开(公告)日：2005-09-06
申请号：US10675998
申请日：2003-10-02
申请人： Mitsuyoshi Nagao , Hidenori Sato
发明人： Mitsuyoshi Nagao , Hidenori Sato
IPC分类号： H04N7/18 , G08B1/08 , H01P5/00 , H04Q7/00
CPC分类号： H04N7/18
摘要： An RF converter circuit 11 that constitutes a video signal superposing/power deriving unit 100 converts video signals generated from images taken by a surveillance camera 10, which derives a direct current voltage as a driving power from an antenna lead-in wire 6 through a filter circuit (LPF circuit 12), to radio-frequency signals. The radio-frequency signals are transmitted through the antenna lead-in wire 6 to a television receiver 2. Images taken by the surveillance camera 1 can be viewed on the television receiver 2 only by selecting the channel assigned to the surveillance camera 1. Accordingly, the driving power for the surveillance camera 1 is not relied upon a solar battery or secondary batteries, and wiring work therefor may be simplified.
摘要翻译：构成视频信号叠加/获取单元100的RF转换器电路11将由监视摄像机10拍摄的图像生成的视频信号转换成通过滤波器从天线引入线6导出作为驱动功率的直流电压电路（LPF电路12）到射频信号。射频信号通过天线引入线6发送到电视接收机2。仅通过选择分配给监视摄像机1的频道，可以在电视接收机2上观看由监视摄像机1拍摄的图像。因此，监视摄像机1的驱动力不依赖于太阳能电池或二次电池，并且可以简化其布线工作。

79. 发明申请

US20050103440A1 Magnetron plasma processing apparatus 有权
标题翻译：磁控管等离子体处理装置
公开(公告)号：US20050103440A1
公开(公告)日：2005-05-19
申请号：US11016997
申请日：2004-12-21
申请人： Hidenori Sato , Daisuke Hayashi
发明人： Hidenori Sato , Daisuke Hayashi
IPC分类号： H01J37/32 , H01L21/306
CPC分类号： H01J37/3266 , H01J37/32623 , H01J37/32633 , H01J37/3405
摘要： A magnetron plasma processing apparatus has a baffle plate interposed between a processing space and a gas exhaust port so as to confine a plasma in the processing space in a processing chamber. The baffle plate has through holes allowing the processing space and the gas exhaust port to communicate with each other. The baffle plate is provided along lines of magnetic force of a magnetic field at a position where the plate is located.
摘要翻译：磁控管等离子体处理装置具有插入处理空间和排气口之间的挡板，以将等离子体限制在处理室中的处理空间中。挡板具有允许处理空间和排气口彼此连通的通孔。挡板沿着板所在的位置处的磁场的磁力线设置。

80. 发明授权

US06808277B2 Inner mirror with built-in antenna 失效
标题翻译：内置内置天线
公开(公告)号：US06808277B2
公开(公告)日：2004-10-26
申请号：US10270012
申请日：2002-10-15
申请人： Masaaki Matsuura , Hidenori Sato
发明人： Masaaki Matsuura , Hidenori Sato
IPC分类号： G02B7182
CPC分类号： B60R1/04 , B60R2001/1261
摘要： The present invention provides an inner mirror with a built-in antenna in which an antenna angle remains unchanged regardless of adjustment of a mirror angle. The upper end of a stay 10 is mounted on a ceiling in a vehicle room. A pivot 14 is formed at the lower end of the stay 10. The pivot 14 is inserted into a mirror body 16 and fitted into a pivot supporting pmember 20 to support the mirror body 16 pivotally in three-dimensional directions. An antenna 34 is mounted on one side of the pivot 14 through shafts 28 and 30. Since the antenna 34 is mounted on the pivot 14, the angle of the antenna 34 remains unchanged, even though the mirror angle adjustment is performed by pivoting the mirror body 16.
摘要翻译：本发明提供一种具有内置天线的内部反射镜，其中天线角度保持不变，而与镜面角度的调节无关。支架10的上端安装在车室的天花板上。枢轴14形成在支柱10的下端。枢轴14被插入镜体16中并且装配到枢轴支撑件20中，以支撑镜体16在三维方向上枢转。天线34通过轴28和30安装在枢轴14的一侧上。由于天线34安装在枢轴14上，天线34的角度保持不变，即使通过使镜子枢转来执行镜面角度调节身体16。

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