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71. 发明授权

US07094316B1 Externally excited torroidal plasma source 失效
标题翻译：外部激发环形等离子体源
公开(公告)号：US07094316B1
公开(公告)日：2006-08-22
申请号：US09638075
申请日：2000-08-11
申请人： Hiroji Hanawa , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka , Yan Ye
发明人： Hiroji Hanawa , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka , Yan Ye
IPC分类号： C23C16/00 , C23F1/02
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second openings therethrough near generally opposite sides of the workpiece support. At least one hollow conduit is connected to the first and second openings. A closed torroidal path is provided through the conduit and extending between the first and second openings across the wafer surface. A process gas supply is coupled to the interior of the chamber for supplying process gas to the torroidal path. A coil antenna is coupled to an RF power source and inductively, coupled to the interior of the hollow conduit and capable of maintaining a plasma in the torroidal path.
摘要翻译：一种用于处理工件的等离子体反应器，包括限定真空室的外壳，位于所述外壳内的工件支撑件面向所述外壳的上部，所述外壳具有穿过所述工件支撑件的大致相对侧的至少第一和第二开口。至少一个中空管道连接到第一和第二开口。通过导管提供封闭的环形路径，并且在第一和第二开口之间跨越晶片表面延伸。工艺气体供应件连接到室的内部，用于将工艺气体供应到环形路径。线圈天线耦合到RF电源并且感应地耦合到中空导管的内部并且能够将等离子体保持在环形路径中。

72. 发明授权

US06939434B2 Externally excited torroidal plasma source with magnetic control of ion distribution 失效
标题翻译：外部激发的环形等离子体源与磁控制的离子分布
公开(公告)号：US06939434B2
公开(公告)日：2005-09-06
申请号：US10164327
申请日：2002-06-05
申请人： Kenneth S. Collins , Hiroji Hanawa , Yan Ye , Kartik Ramaswamy , Andrew Nguyen , Michael S. Barnes , Huong Thanh Nguyen
发明人： Kenneth S. Collins , Hiroji Hanawa , Yan Ye , Kartik Ramaswamy , Andrew Nguyen , Michael S. Barnes , Huong Thanh Nguyen
IPC分类号： H01J37/32 , C23C16/00 , C23F1/00
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32412
摘要： A plasma reactor is described that includes a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal. The chamber has at least a first pair of ports near opposing sides of said processing region and a first external reentrant tube is connected at respective ends thereof to the pair of ports. The reactor further includes a process gas injection apparatus (such as a gas distribution plate) and an RF power applicator coupled to the reentrant tube for applying plasma source power to process gases within the tube to produce a reentrant torroidal plasma current through the first tube and across said processing region. A magnet controls radial distribution of plasma ion density in the processing region, the magnet having an elongate pole piece defining a pole piece axis intersecting the processing region.
摘要翻译：描述了一种等离子体反应器，其包括由壳体限定的真空室，所述外壳包括在所述腔室内的侧壁和工件支撑基座，其限定覆盖所述基座的处理区域。所述腔室具有在所述处理区域的相对侧附近的至少第一对端口，并且第一外部可折入管的相应端部连接到所述一对端口。反应器还包括工艺气体注入装置（例如气体分配板）和耦合到可折入管的RF功率施加器，其用于施加等离子体源功率以处理管内的气体，以产生通过第一管的可重入环形等离子体电流，跨越所述处理区域。磁体控制处理区域中的等离子体离子密度的径向分布，磁体具有限定与加工区域相交的极片轴线的细长极片。

73. 发明授权

US06551446B1 Externally excited torroidal plasma source with a gas distribution plate 失效
标题翻译：外部激发的环形等离子体源与气体分配板
公开(公告)号：US06551446B1
公开(公告)日：2003-04-22
申请号：US09637174
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S. Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S. Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： C23C1600
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma reactor for processing a workpiece includes a vacuum enclosure, including a wall, defining a vacuum chamber, the vacuum chamber having a main chamber portion on one side of the wall and a plenum on another side of the wall, the plenum communicating with the chamber portion through at least one opening in the wall, a workpiece support within the main chamber portion and facing the wall. A gas distribution plate is adjacent the wall and faces the workpiece support and is coupled to a reactive process gas supply for injecting reactive process gases directly into a process region adjacent the workpiece support. A gas injection port at the plenum is coupled to a diluent gas supply for injecting diluent gases into the plenum. A coil antenna adapted to accept RF power is inductively coupled to the interior of said plenum, and is capable of maintaining a plasma in a reentrant path through the plenum and across the process region.
摘要翻译：用于处理工件的等离子体反应器包括真空封壳，其包括限定真空室的壁，所述真空室具有在壁的一侧上的主室部分和在壁的另一侧上的增压室，室部分通过壁中的至少一个开口，主室部分内的工件支撑件并面向壁。气体分配板邻近壁并且面向工件支撑件并且与反应性工艺气体供应件相连接，用于将反应性工艺气体直接注入到与工件支撑件相邻的工艺区域中。增压室处的气体注入口与稀释气体供应装置连接，用于将稀释气体注入气室。适于接收RF功率的线圈天线感应耦合到所述增压室的内部，并且能够将等离子体维持在通过充气室并且跨越过程区域的折返路径中。

74. 发明授权

US06453842B1 Externally excited torroidal plasma source using a gas distribution plate 失效
标题翻译：使用气体分配板的外部激发的环形等离子体源
公开(公告)号：US06453842B1
公开(公告)日：2002-09-24
申请号：US09636700
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： C23C1600
CPC分类号： H01J37/321 , H01J37/32082
摘要： A plasma chamber defining an evacuated interior environment for processing a substrate includes a substrate support, an apertured gas distribution plate in spaced facing relationship to the substrate support, and adapted to flow process gases into the chamber interior environment adjacent the substrate support, the gas distribution plate and substrate support defining a substrate processing region therebetween, a hollow reentrant conduit having respective ends opening into the substrate processing region on opposite sides of the gas distribution plate, with the interior of said conduit sharing the interior environment. The conduit is adapted to accept irradiation of processing gases within the conduit to sustain a plasma in a path extending around the conduit interior and across the substrate processing region within the chamber interior environment.
摘要翻译：限定用于处理衬底的抽空的内部环境的等离子体室包括衬底支撑件，与衬底支撑件间隔开的面对关系的多孔气体分配板，并且适于将工艺气体流入邻近衬底支撑件的腔室内部环境中，气体分布板和基板支撑件，其间限定了其间的基板加工区域，中空折痕导管，其相应的端部通向气体分配板的相对侧上的基板处理区域，所述导管的内部共享内部环境。导管适于接受管道内的处理气体的照射，以在围绕导管内部延伸并且在腔室内部环境内的衬底处理区域上延伸的路径中维持等离子体。

75. 发明授权

US06410449B1 Method of processing a workpiece using an externally excited torroidal plasma source 失效
标题翻译：使用外部激发的环形等离子体源处理工件的方法
公开(公告)号：US06410449B1
公开(公告)日：2002-06-25
申请号：US09636436
申请日：2000-08-11
申请人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
发明人： Hiroji Hanawa , Yan Ye , Kenneth S Collins , Kartik Ramaswamy , Andrew Nguyen , Tsutomu Tanaka
IPC分类号： H01L21302
CPC分类号： H01J37/321 , H01J37/32082
摘要： A method of processing a workpiece in a plasma reactor includes establishing a torroidal path for a plasma current to flow that passes near and transverse to the surface of said workpiece, maintaining a plasma current in the torroidal path by applying RF power to a portion of the torroidal path away from the surface of the workpiece, and increasing the ion density of the plasma current in the vicinity of the workpiece by constricting the area of a portion of the torroidal path overlying the workpiece.
摘要翻译：在等离子体反应器中处理工件的方法包括建立用于等离子体电流的环形路径，其流过靠近和横向于所述工件的表面的流动，通过将RF功率施加到环形路径的一部分来维持在环形路径中的等离子体电流环形路径远离工件的表面，并且通过收缩覆盖工件的一部分环形路径的面积来增加工件附近的等离子体电流的离子密度。

76. 发明授权

US08076247B2 Plasma process uniformity across a wafer by controlling RF phase between opposing electrodes 失效
标题翻译：通过控制相对电极之间的RF相位，晶片上的等离子体工艺均匀性
公开(公告)号：US08076247B2
公开(公告)日：2011-12-13
申请号：US11733770
申请日：2007-04-11
申请人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： Kenneth S. Collins , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger, Jr. , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H01L21/302
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.
摘要翻译：提供了一种用于在等离子体反应器室中处理工件的方法。该方法包括通过天线电极将等离子体耦合到腔室中的等离子体，并通过工件支撑电极将等离子体的功率耦合到至少近似相同的RF频率。该方法还包括提供边缘接地返回路径。该方法还包括调节（a）所述电极之间的电流之间的比例和（b）从所述电极到达边缘接地返回路径的电流，以控制工件上的等离子体离子密度分布均匀性。

77. 发明申请

US20100018648A1 WORKPIECE SUPPORT FOR A PLASMA REACTOR WITH CONTROLLED APPORTIONMENT OF RF POWER TO A PROCESS KIT RING 审中-公开
标题翻译：用于等离子体反应器的工作支持，具有控制的RF功率分配到工艺套件环
公开(公告)号：US20100018648A1
公开(公告)日：2010-01-28
申请号：US12178032
申请日：2008-07-23
申请人： KENNETH S. COLLINS , Douglas A. Buchberger, JR. , Kartik Ramaswamy , Shahid Rauf , Hiroji Hanawa , Jennifer Y. Sun , Andrew Nguyen , Thorsten B. Lill , Meihua Shen
发明人： KENNETH S. COLLINS , Douglas A. Buchberger, JR. , Kartik Ramaswamy , Shahid Rauf , Hiroji Hanawa , Jennifer Y. Sun , Andrew Nguyen , Thorsten B. Lill , Meihua Shen
IPC分类号： H01L21/3065
CPC分类号： H01J37/32642 , H01J37/32082 , H01J37/32174 , H01J37/32623 , H01J2237/2001 , H01L21/6833
摘要： In an electrostatic chuck, RF bias power is separately applied to a workpiece and to a process kit collar surrounding the workpiece. At least one variable impedance element governed by a system controller adjusts the apportionment of RF bias power between the workpiece and the process kit collar, allowing dynamic adjustment of the plasma sheath electric field at the extreme edge of the workpiece, for optimum electric field uniformity under varying plasma conditions, for example.
摘要翻译：在静电卡盘中，RF偏置功率分别施加到工件和围绕工件的处理套件套环。由系统控制器控制的至少一个可变阻抗元件调节工件和工艺套件套环之间的RF偏置功率的分配，允许动态调整工件最末端处的等离子体护套电场，以获得最佳的电场均匀度改变等离子体条件。

78. 发明授权

US07430984B2 Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements 失效
标题翻译：使用单个发生器和开关元件来驱动具有空间不同等离子体二次谐波的空间分离谐振结构的方法
公开(公告)号：US07430984B2
公开(公告)日：2008-10-07
申请号：US10285092
申请日：2002-10-30
申请人： Hiroji Hanawa , Kartik Ramaswamy , Kenneth S. Collins , Andrew Nguyen , Gonzalo Antonio Monroy
发明人： Hiroji Hanawa , Kartik Ramaswamy , Kenneth S. Collins , Andrew Nguyen , Gonzalo Antonio Monroy
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/32174
摘要： A plasma reactor for processing a workpiece, the plasma reactor comprising an enclosure, a workpiece support within the enclosure facing an overlying portion of the enclosure, the workpiece support and the overlying portion of the enclosure defining a process region therebetween extending generally across the diameter of said wafer support, the enclosure having a first and second pairs of openings therethrough, the two openings of each of the first and second pairs being near generally opposite sides of said workpiece support, a first hollow conduit outside of the process region and connected to the first pair of openings, providing a first torroidal path extending through the conduit and across the process region, a second hollow conduit outside of the process region and connected to the second pair of openings, providing a second torroidal path extending through the conduit and across the process region, first and second plasma source power applicators inductively coupled to the interiors of the first and second hollow conduits, respectively, each of the first and second plasma source power applicators being capable of maintaining a plasma in a respective one of the first and second torroidal paths, an RF power generator providing an RF output current, a current switching network connected between the RF power generator and the first and second plasma source power applicators for applying respective periodic time segments of RF output current to respective ones of said first and second plasma source power applicators.
摘要翻译：一种用于处理工件的等离子体反应器，所述等离子体反应器包括外壳，所述外壳内的工件支撑件面向所述外壳的上部，所述工件支撑件和所述外壳的上部部分限定了其间的工艺区域，所述晶片支撑件，所述外壳具有穿过其中的第一和第二对开口，所述第一和第二对中的每一个的两个开口靠近所述工件支撑件的大致相对的两侧，在所述工艺区域外部并连接到所述工件区域的第一中空导管第一对开口，提供延伸穿过导管并跨过处理区域的第一环形路径，在处理区域外部的第二中空导管，并连接到第二对开口，提供延伸穿过导管并跨过管道的第二环形路径工艺区域，第一和第二等离子体源功率施加器电感耦合到第一和第二空心管道的裂口分别地，第一和第二等离子体源功率施加器中的每一个能够维持第一和第二环形路径中的相应一个中的等离子体，提供RF输出电流的RF发电机，连接在RF功率发生器和第一和第二等离子体源功率施加器之间的电流开关网络，用于将RF输出电流的相应的周期性时间段施加到所述第一和第二等离子体源功率施加器中的相应的等离子体源功率施加器。

79. 发明申请

US20080179011A1 PLASMA REACTOR WITH WIDE PROCESS WINDOW EMPLOYING PLURAL VHF SOURCES 审中-公开
标题翻译：等离子体反应器，具有采用多个VHF源的宽过程窗口
公开(公告)号：US20080179011A1
公开(公告)日：2008-07-31
申请号：US11734040
申请日：2007-04-11
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： C23C16/45574 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32174 , H01L21/67069 , H01L21/6831
摘要： A plasma reactor includes an electrostatic chuck in the chamber for supporting the workpiece, a ceiling electrode facing the electrostatic chuck and an ESC electrode in the electrostatic chuck with an electrostatic clamping voltage supply coupled to the ESC electrode. The reactor further includes at least a first RF bias source of an LF or HF frequency coupled to the pedestal electrode, and first and second VHF power sources of different frequencies coupled to the same or to different ones of the electrodes. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution non-uniformities, respectively, in the chamber.
摘要翻译：等离子体反应器包括用于支撑工件的室中的静电卡盘，面向静电卡盘的天花板电极和静电卡盘中的ESC电极，其具有耦合到ESC电极的静电钳位电压源。反应器还包括耦合到基座电极的LF或HF频率的至少第一RF偏置源，以及耦合到相同或不同电极的不同频率的第一和第二VHF电源。第一和第二VHF电源分别具有足够高和足够低的频率，以分别在腔室中产生中心高和中心低等离子体分布不均匀性。

80. 发明申请

US20070165356A1 SUBSTRATE SUPPORT HAVING HEAT TRANSFER SYSTEM 有权
标题翻译：具有热传递系统的基板支持
公开(公告)号：US20070165356A1
公开(公告)日：2007-07-19
申请号：US11683994
申请日：2007-03-08
申请人： Andrew Nguyen , Wing Cheng , Hiroji Hanawa , Semyon Kats , Kartik Ramaswamy , Yan Ye , Kwok Wong , Daniel Hoffman , Tetsuya Ishikawa , Brian Lue
发明人： Andrew Nguyen , Wing Cheng , Hiroji Hanawa , Semyon Kats , Kartik Ramaswamy , Yan Ye , Kwok Wong , Daniel Hoffman , Tetsuya Ishikawa , Brian Lue
IPC分类号： H01L21/683
CPC分类号： H01L21/67109
摘要： A support for a substrate processing chamber comprises a fluid circulating reservoir comprising a channel having serpentine convolutions. A fluid inlet supplies a heat transfer fluid to the fluid circulating reservoir and a fluid outlet discharges the heat transfer fluid. In one version, the channel is doubled over to turn back upon itself.
摘要翻译：用于衬底处理室的支撑件包括流体循环容器，其包括具有蛇形卷积的通道。流体入口将传热流体供应到流体循环储存器，并且流体出口排出传热流体。在一个版本中，频道翻倍翻转自己。

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