专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20050272200A1 Bismuth titanium silicon oxide, bismuth titanium silicon oxide thin film, and method for forming the thin film 失效
公开(公告)号：US20050272200A1
公开(公告)日：2005-12-08
申请号：US11136456
申请日：2005-05-25
申请人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
发明人： Young-jin Cho , Yo-sep Min , Young-soo Park , Jung-hyun Lee , June-key Lee , Yong-kyun Lee
IPC分类号： C01B33/00 , C01G29/00 , C04B35/475 , C23C14/06 , C23C16/42 , H01L21/02 , H01L21/28 , H01L21/316 , H01L21/8242 , H01L27/108 , H01L29/51 , H01L21/473
CPC分类号： H01L21/28185 , C01G29/006 , C01P2002/36 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2002/89 , C01P2004/03 , C01P2004/04 , C01P2004/80 , C01P2006/40 , C04B35/16 , C04B35/475 , C04B35/6264 , C04B2235/3232 , C04B2235/3298 , C04B2235/3418 , C04B2235/441 , C04B2235/444 , C04B2235/658 , C04B2235/6581 , C04B2235/76 , H01L21/28194 , H01L21/31691 , H01L28/55 , H01L29/516 , H01L29/517
摘要： A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film.

72. 发明申请

US20050144970A1 Refrigerator 审中-公开
标题翻译：冰箱
公开(公告)号：US20050144970A1
公开(公告)日：2005-07-07
申请号：US10879536
申请日：2004-06-30
申请人： Young-jin Cho , Hyun-sang Yoo
发明人： Young-jin Cho , Hyun-sang Yoo
IPC分类号： E05C19/02 , F25D23/02 , G05D23/32 , A47B96/04 , F25D11/02 , F25D25/00
CPC分类号： F25D23/025 , E05C19/028 , F25D2323/023 , F25D2400/06
摘要： A refrigerator having: a main body with a freezing compartment and a refrigerating compartment, each having an opening; a freezing compartment door and a refrigerating compartment door provided on the main body, each to rotatably open and close the respective openings of the freezing and refrigerating compartments; an auxiliary freezing compartment, provided on the freezing compartment door to store food, and having an opening; and a freezing compartment home bar door to open and close the opening of the auxiliary freezing compartment. Thus, according to the present invention, the freezing compartment door has the auxiliary freezing compartment and the freezing compartment home bar door, which allows a user to store food without opening the freezing compartment door, and minimizes a leakage of cooling air from the freezing compartment.
摘要翻译：一种冰箱，具有：具有冷冻室和冷藏室的主体，每个具有开口; 设置在主体上的冷冻室门和冷藏室门各自可旋转地打开和关闭冷冻室和冷藏室的各个开口; 一个辅助冷冻室，设在冷冻室门上以储存食物，并具有开口; 和冷冻室家庭酒吧门，以打开和关闭辅助冷冻室的开口。因此，根据本发明，冷冻室门具有辅助冷冻室和冷冻室家庭酒吧门，其允许用户在不打开冷冻室门的情况下存储食物，并且使冷冻空气从冷冻室泄漏最小化。

73. 发明申请

US20050042836A1 Capacitor for semiconductor device, manufacturing method thereof, and electronic device employing the same 失效
标题翻译：半导体装置用电容器及其制造方法以及使用该半导体装置的电子装置
公开(公告)号：US20050042836A1
公开(公告)日：2005-02-24
申请号：US10930953
申请日：2004-09-01
申请人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Yo-sep Min , Young-jin Cho
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/06 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , H01L21/20
CPC分类号： H01L28/56 , H01L21/3141 , H01L21/321 , H01L27/0629 , H01L28/55 , H01L28/65
摘要： A capacitor for use in a semiconductor device, a method of fabricating the capacitor, and an electronic device adopting the capacitor, wherein the capacitor includes upper and lower electrodes, each formed of a platinum group metal; a thin dielectric layer disposed between the upper and lower electrodes; and a buffer layer disposed between the lower electrode and the thin dielectric layer, the buffer layer including a metal oxide of Group 3, 4, or 13. In the capacitor of the present invention, oxidization of the lower electrode may be suppressed, and excellent characteristics of the thin dielectric layer may be maintained.
摘要翻译：一种用于半导体器件的电容器，制造该电容器的方法以及采用该电容器的电子器件，其中该电容器包括由铂族金属形成的上下电极; 设置在上电极和下电极之间的薄介电层; 以及设置在下电极和薄电介质层之间的缓冲层，缓冲层包括第3,4或13族的金属氧化物。在本发明的电容器中，可以抑制下电极的氧化，优异的可以保持薄介电层的特性。

74. 发明授权

US06752869B2 Atomic layer deposition using organometallic complex with &bgr;-diketone ligand 失效
标题翻译：使用有机金属络合物与β-二酮配体的原子层沉积
公开(公告)号：US06752869B2
公开(公告)日：2004-06-22
申请号：US10160111
申请日：2002-06-04
申请人： Jung-hyun Lee , Dae-sig Kim , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Dae-sig Kim , Yo-sep Min , Young-jin Cho
IPC分类号： C30B2504
CPC分类号： C23C16/45542 , C23C16/40 , C23C16/405 , C23C16/45553 , C23C16/5096
摘要： An atomic layer deposition (ALD) method, whereby an organometallic complex with a &bgr;-diketone ligand is chemically adsorbed onto a substrate and oxidized by activated oxygen radicals to deposit an atomic metal oxide layer on the substrate, uses reactive oxygen radicals generated using plasma and an organometallic complex having a &bgr;-diketone ligand as a precursor, which could not be used in a thermal ALD method using oxygen or water as an oxidizing agent, to address and solve the problem of the removal of organic substances using organometallic complexes with &bgr;-diketone ligands, thereby enabling diversification of the precursors for ALD and formation of excellent oxide films at low temperatures.
摘要翻译：原子层沉积（ALD）方法，其中具有β-二酮配体的有机金属络合物被化学吸附到基底上并被活性氧自由基氧化以在基底上沉积原子金属氧化物层，使用使用等离子体产生的活性氧自由基，具有β-二酮配体作为前体的有机金属配合物，其不能用于使用氧或水作为氧化剂的热ALD方法，以解决和解决使用有机金属络合物除去有机物质的问题，二酮配体，从而使ALD前体多样化，并在低温下形成优异的氧化膜。

75. 发明授权

US5956596A Method of forming and cleaning a laser marking region at a round zone of a semiconductor wafer 失效
标题翻译：在半导体晶片的圆形区域形成和清洁激光标记区域的方法
公开(公告)号：US5956596A
公开(公告)日：1999-09-21
申请号：US980912
申请日：1997-12-01
申请人： Se-Yeon Jang , Young-Jin Cho , Dong-Heui Jang , Jeong-Yeal Kim
发明人： Se-Yeon Jang , Young-Jin Cho , Dong-Heui Jang , Jeong-Yeal Kim
IPC分类号： H01L21/306 , H01L23/544 , H01L21/76
CPC分类号： H01L21/02043 , H01L23/544 , H01L2223/54493 , H01L2924/0002
摘要： The invention relates to a wafer for use as a substrate for a semiconductor device, the wafer comprising a round zone formed along a circumference thereof; a flat zone wherein the circumference thereof is partially cut in a straight line; and a laser marking region functioning as a wafer bar-code which is formed in an upper portion of the round zone opposite to and apart from the flat zone. The wafer bar-code has holes having about 2 .mu.m depth and is formed by a soft marking process. A good fine pattern can be formed on the wafer with a follow-on patterning process by substantially cleaning photoresist materials remaining in holes of the laser marking region. Further, the occurrence of G-defects can be reduced, such defects being caused by photoresist particles remaining on the surface of the wafer.
摘要翻译：本发明涉及一种用作半导体器件的衬底的晶片，该晶片包括沿其圆周形成的圆形区域; 平坦区域，其周边部分地被切割成直线; 以及用作晶片条形码的激光标记区域，其形成在与平坦区域相对且与平坦区域相对的圆形区域的上部中。晶圆条码具有深度约2μm的孔，并通过软标记工艺形成。可以通过基本上清洁残留在激光打标区域中的光致抗蚀剂材料的后续图案化工艺，在晶片上形成良好的精细图案。此外，可以减少G缺陷的发生，这种缺陷是由残留在晶片表面上的光致抗蚀剂颗粒引起的。

76. 发明申请

US20160197161A1 SEMICONDUCTOR DEVICE INCLUDING A GATE ELECTRODE ON A PROTRUDING GROUP III-V MATERIAL LAYER AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20160197161A1
公开(公告)日：2016-07-07
申请号：US15069148
申请日：2016-03-14
申请人： Young-jin CHO , Kyoung-yeon KIM , Sang-moon LEE , Ki-ha HONG , Eui-chul HWANG
发明人： Young-jin CHO , Kyoung-yeon KIM , Sang-moon LEE , Ki-ha HONG , Eui-chul HWANG
IPC分类号： H01L29/66 , H01L29/423 , H01L29/12
CPC分类号： H01L29/7784 , H01L21/02538 , H01L29/122 , H01L29/127 , H01L29/158 , H01L29/20 , H01L29/205 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/66522 , H01L29/66795 , H01L29/7783 , H01L29/7787 , H01L29/785
摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

77. 发明授权

US09159657B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09159657B2
公开(公告)日：2015-10-13
申请号：US13476609
申请日：2012-05-21
申请人： Young-Jin Cho
发明人： Young-Jin Cho
IPC分类号： H01L23/48 , H01L23/50 , H01L23/52 , H01L23/498 , H01L23/00 , H01L23/15
CPC分类号： H05K1/181 , G09G3/3225 , G09G3/3648 , G09G2300/04 , H01L23/15 , H01L23/48 , H01L23/481 , H01L23/498 , H01L23/49838 , H01L23/50 , H01L23/52 , H01L24/05 , H01L24/06 , H01L24/16 , H01L2224/0401 , H01L2224/05567 , H01L2224/06155 , H01L2224/131 , H01L2224/16237 , H01L2924/00014 , H01L2924/014 , H01L2224/05552
摘要： A semiconductor device includes a semiconductor chip which includes a first circuit and a second circuit that are spaced apart from each other, without internal wirings electrically connecting the first circuit and the second circuit to each other, a substrate on which the semiconductor chip is disposed, and substrate wirings that are arranged on the substrate and electrically connect the first circuit and the second circuit to each other.
摘要翻译：半导体器件包括：半导体芯片，其包括彼此间隔开的第一电路和第二电路，没有将第一电路和第二电路彼此电连接的内部布线，其上设置有半导体芯片的基板，以及布置在基板上并将第一电路和第二电路彼此电连接的基板布线。

78. 发明授权

US08956936B2 Method of forming group III-V material layer, semiconductor device including the group III-V material layer, and method of manufacturing the semiconductor layer 有权
标题翻译：形成III-V族材料层的方法，包括III-V族材料层的半导体器件，以及半导体层的制造方法
公开(公告)号：US08956936B2
公开(公告)日：2015-02-17
申请号：US13568555
申请日：2012-08-07
申请人： Sang-moon Lee , Young-jin Cho
发明人： Sang-moon Lee , Young-jin Cho
IPC分类号： H01L29/78 , H01L29/10 , H01L29/423 , H01L29/778
CPC分类号： H01L29/1033 , H01L29/42376 , H01L29/7787
摘要： A method of forming a group III-V material layer, a semiconductor device including the group III-V material layer, and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate; a group III-V channel layer formed on the substrate; a gate insulating layer formed on the group III-V channel layer; and a gate electrode and source and drain electrodes formed on the gate insulating layer, the source and drain electrodes having intervals from the gate electrode, wherein voids exist between a lower portion of the group III-V channel layer and an insulating layer. The group III-V channel layer may include a binary, ternary, or quaternary material.
摘要翻译：形成III-V族材料层的方法，包括III-V族材料层的半导体器件，以及制造半导体器件的方法。半导体器件包括衬底; 形成在所述基板上的III-V沟道层; 形成在III-V沟道层上的栅极绝缘层; 以及形成在栅极绝缘层上的栅极电极和源极和漏极，源极和漏极具有与栅极电极的间隔，其中在III-V族沟道层的下部和绝缘层之间存在空隙。 III-V族沟道层可以包括二元，三元或四元材料。

79. 发明申请

US20140170032A1 METAL FILTER FOR PURIFYING EXHAUST GAS FROM SHIP, AND PREPARATION METHOD THEREOF 有权
标题翻译：用于从船上净化排气的金属过滤器及其制备方法
公开(公告)号：US20140170032A1
公开(公告)日：2014-06-19
申请号：US14232807
申请日：2013-03-22
申请人： Hee-Sung Yang , Joon-Ho Ko , Chan-do Park , Seok-Lyong Song , Jae-Woo Lee , Sung-Young Lee , Jai-Hyun Park , Kyoung-Jae Kim , Seung-Han Han , Young-Jin Cho , Tae-Min Kim , Ju-Yong Jung
发明人： Hee-Sung Yang , Joon-Ho Ko , Chan-do Park , Seok-Lyong Song , Jae-Woo Lee , Sung-Young Lee , Jai-Hyun Park , Kyoung-Jae Kim , Seung-Han Han , Young-Jin Cho , Tae-Min Kim , Ju-Yong Jung
IPC分类号： F01N3/28
CPC分类号： F01N3/281 , B01D53/9413 , B01D2255/20707 , B01D2255/20723 , B01D2255/20776 , B01D2255/2092 , F01N3/022 , F01N3/035 , F01N2330/02 , F01N2330/22 , F01N2510/06
摘要： The present invention relates to a metal filter for purifying the exhaust gas from a ship, and a preparation method thereof. The purpose of the present invention is to provide: a metal filter for purifying the exhaust gas from a ship, capable of reducing nitrogen oxide by 85% or more at 250-300° C.; and a preparation method thereof. The metal filter for removing nitrogen oxide contained in the exhaust gas from a ship of the present invention comprises an integrated catalyst, wherein a metal substrate comprising irregularities is coated with a low temperature active catalyst in which vanadium (V), tungsten (W) and alumina sol are supported in a Ti-pillared clay (Ti-PILC) powdered support.
摘要翻译：本发明涉及一种用于净化船舶废气的金属过滤器及其制备方法。本发明的目的是提供一种用于净化来自船舶的废气的金属过滤器，其能够在250-300℃下将氮氧化物还原85％以上。及其制备方法。用于除去本发明船舶废气中所含的氮氧化物的金属过滤器包括一体化催化剂，其中包含不规则的金属基体涂覆有低温活性催化剂，其中钒（V），钨（W）和氧化铝溶胶负载在钛柱状粘土（Ti-PILC）粉末状载体中。

80. 发明授权

US08614014B2 Tracks including magnetic layer and magnetic memory devices comprising the same 失效
标题翻译：包含磁性层的磁迹和包括磁性层的磁存储装置
公开(公告)号：US08614014B2
公开(公告)日：2013-12-24
申请号：US12662215
申请日：2010-04-06
申请人： Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Jin-seong Heo , Ji-young Bae
发明人： Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Jin-seong Heo , Ji-young Bae
IPC分类号： G11B5/66 , G11C19/02
CPC分类号： G11B5/72 , G11B5/7325 , G11C11/14
摘要： A magnetic memory device includes a track in which different non-magnetic layers are respectively formed on upper and lower surfaces of a magnetic layer. One of the two non-magnetic layers includes an element having an atomic number greater than or equal to 12. Accordingly, the magnetic layer has a relatively high non-adiabaticity (β).
摘要翻译：一种磁存储器件包括其中分别在磁性层的上表面和下表面上形成不同非磁性层的轨道。两个非磁性层中的一个包括原子序数大于或等于12的元素。因此，磁性层具有相对高的非绝热性（β）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式