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1. 发明授权

US09419094B2 Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device 有权
公开(公告)号：US09419094B2
公开(公告)日：2016-08-16
申请号：US15069148
申请日：2016-03-14
申请人： Young-jin Cho , Kyoung-yeon Kim , Sang-moon Lee , Ki-ha Hong , Eui-chul Hwang
发明人： Young-jin Cho , Kyoung-yeon Kim , Sang-moon Lee , Ki-ha Hong , Eui-chul Hwang
IPC分类号： H01L21/336 , H01L29/66 , H01L29/12 , H01L29/423
CPC分类号： H01L29/7784 , H01L21/02538 , H01L29/122 , H01L29/127 , H01L29/158 , H01L29/20 , H01L29/205 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/66522 , H01L29/66795 , H01L29/7783 , H01L29/7787 , H01L29/785
摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

2. 发明授权

US09355917B2 Complementary metal oxide semiconductor device, optical apparatus including the same, and method of manufacturing the same 有权
公开(公告)号：US09355917B2
公开(公告)日：2016-05-31
申请号：US14790391
申请日：2015-07-02
申请人： Sang-moon Lee , Young-jin Cho
发明人： Sang-moon Lee , Young-jin Cho
IPC分类号： H01L21/8238 , H01L21/8258 , H01L27/092 , H01L27/15 , H01L29/267 , H01L27/06 , H01L21/02 , H01L21/306 , H01L29/16 , H01L29/20
CPC分类号： H01L21/8258 , H01L21/02381 , H01L21/02532 , H01L21/02538 , H01L21/30625 , H01L21/8238 , H01L27/0605 , H01L27/092 , H01L27/0922 , H01L27/15 , H01L29/16 , H01L29/20 , H01L29/267
摘要： A complementary metal oxide semiconductor (CMOS) device includes an n-type first transistor on a silicon substrate, the n-type first transistor including a Group III-V compound semiconductor substrate, and a p-type second transistor on the silicon substrate, the p-type second transistor including a germanium based substrate.

3. 发明授权

US09070706B2 Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device 有权
标题翻译：包括突起III-V族材料层上的栅电极的半导体器件和制造该半导体器件的方法
公开(公告)号：US09070706B2
公开(公告)日：2015-06-30
申请号：US13611127
申请日：2012-09-12
申请人： Young-jin Cho , Kyoung-yeon Kim , Sang-moon Lee , Ki-ha Hong , Eui-chul Hwang
发明人： Young-jin Cho , Kyoung-yeon Kim , Sang-moon Lee , Ki-ha Hong , Eui-chul Hwang
IPC分类号： H01L29/06 , H01L29/66 , H01L29/778 , H01L29/20
CPC分类号： H01L29/7784 , H01L21/02538 , H01L29/122 , H01L29/127 , H01L29/158 , H01L29/20 , H01L29/205 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/66522 , H01L29/66795 , H01L29/7783 , H01L29/7787 , H01L29/785
摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.
摘要翻译：一种包括III-V族阻挡层的半导体器件和制造半导体器件的方法，所述半导体器件包括：衬底，形成为在衬底上间隔开的绝缘层，用于填充所述衬底之间的空间的III-V族材料层所述绝缘层具有比所述绝缘层突出的部分，用于覆盖所述III-V族材料层的所述突出部分的侧表面和上表面的阻挡层，并且具有比所述III-V族材料的带隙大的带隙层，用于覆盖势垒层的表面的栅极绝缘膜，形成在栅极绝缘膜上的栅电极，以及与栅电极分开形成的源极和漏极。 III-V族材料层的总体组成是均匀的。阻挡层可以包括用于形成量子阱的III-V族材料。

4. 发明授权

US08956936B2 Method of forming group III-V material layer, semiconductor device including the group III-V material layer, and method of manufacturing the semiconductor layer 有权
标题翻译：形成III-V族材料层的方法，包括III-V族材料层的半导体器件，以及半导体层的制造方法
公开(公告)号：US08956936B2
公开(公告)日：2015-02-17
申请号：US13568555
申请日：2012-08-07
申请人： Sang-moon Lee , Young-jin Cho
发明人： Sang-moon Lee , Young-jin Cho
IPC分类号： H01L29/78 , H01L29/10 , H01L29/423 , H01L29/778
CPC分类号： H01L29/1033 , H01L29/42376 , H01L29/7787
摘要： A method of forming a group III-V material layer, a semiconductor device including the group III-V material layer, and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate; a group III-V channel layer formed on the substrate; a gate insulating layer formed on the group III-V channel layer; and a gate electrode and source and drain electrodes formed on the gate insulating layer, the source and drain electrodes having intervals from the gate electrode, wherein voids exist between a lower portion of the group III-V channel layer and an insulating layer. The group III-V channel layer may include a binary, ternary, or quaternary material.
摘要翻译：形成III-V族材料层的方法，包括III-V族材料层的半导体器件，以及制造半导体器件的方法。半导体器件包括衬底; 形成在所述基板上的III-V沟道层; 形成在III-V沟道层上的栅极绝缘层; 以及形成在栅极绝缘层上的栅极电极和源极和漏极，源极和漏极具有与栅极电极的间隔，其中在III-V族沟道层的下部和绝缘层之间存在空隙。 III-V族沟道层可以包括二元，三元或四元材料。

5. 发明授权

US09343564B2 Semiconductor device including a gate electrode on a protruding group III-V material layer and method of manufacturing the semiconductor device 有权
公开(公告)号：US09343564B2
公开(公告)日：2016-05-17
申请号：US14718968
申请日：2015-05-21
申请人： Young-jin Cho , Kyoung-yeon Kim , Sang-moon Lee , Ki-ha Hong , Eui-chul Hwang
发明人： Young-jin Cho , Kyoung-yeon Kim , Sang-moon Lee , Ki-ha Hong , Eui-chul Hwang
IPC分类号： H01L29/06 , H01L29/778 , H01L29/66 , H01L29/20 , H01L29/78 , H01L21/02 , H01L29/12
CPC分类号： H01L29/7784 , H01L21/02538 , H01L29/122 , H01L29/127 , H01L29/158 , H01L29/20 , H01L29/205 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/66522 , H01L29/66795 , H01L29/7783 , H01L29/7787 , H01L29/785
摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

6. 发明授权

US09324852B2 Semiconductor device including a gate electrode on a protruding group III-V material layer 有权
标题翻译：半导体器件包括在突出的III-V族材料层上的栅电极
公开(公告)号：US09324852B2
公开(公告)日：2016-04-26
申请号：US14623394
申请日：2015-02-16
申请人： Young-jin Cho , Kyoung-yeon Kim , Sang-moon Lee , Ki-ha Hong , Eui-chul Hwang
发明人： Young-jin Cho , Kyoung-yeon Kim , Sang-moon Lee , Ki-ha Hong , Eui-chul Hwang
IPC分类号： H01L29/06 , H01L29/778 , H01L29/66 , H01L29/20 , H01L29/78 , H01L21/02 , H01L29/12
CPC分类号： H01L29/7784 , H01L21/02538 , H01L29/122 , H01L29/127 , H01L29/158 , H01L29/20 , H01L29/205 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/66522 , H01L29/66795 , H01L29/7783 , H01L29/7787 , H01L29/785
摘要： A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.
摘要翻译：一种包括III-V族阻挡层的半导体器件和制造半导体器件的方法，所述半导体器件包括：衬底，形成为在衬底上间隔开的绝缘层，用于填充所述衬底之间的空间的III-V族材料层所述绝缘层具有比所述绝缘层突出的部分，用于覆盖所述III-V族材料层的所述突出部分的侧表面和上表面的阻挡层，并且具有比所述III-V族材料的带隙大的带隙层，用于覆盖势垒层的表面的栅极绝缘膜，形成在栅极绝缘膜上的栅电极，以及与栅电极分开形成的源极和漏极。 III-V族材料层的总体组成是均匀的。阻挡层可以包括用于形成量子阱的III-V族材料。

7. 发明授权

US08574730B2 Magnetic tracks, information storage devices using magnetic domain wall movement, and methods of manufacturing the same 有权
公开(公告)号：US08574730B2
公开(公告)日：2013-11-05
申请号：US12155896
申请日：2008-06-11
申请人： Young-jin Cho , Sung-chul Lee , Kwang-seok Kim , Ji-young Bae , Sun-ae Seo , Chang-won Lee
发明人： Young-jin Cho , Sung-chul Lee , Kwang-seok Kim , Ji-young Bae , Sun-ae Seo , Chang-won Lee
IPC分类号： G11B5/76 , G11C19/08 , H01L35/04
CPC分类号： G11C19/0841 , G11C11/14
摘要： Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions.

8. 发明授权

US08144503B2 Information storage device and method of operating the same 有权
标题翻译：信息存储装置及其操作方法
公开(公告)号：US08144503B2
公开(公告)日：2012-03-27
申请号：US12457908
申请日：2009-06-25
申请人： Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ji-young Bae , Ung-hwan Pi , Hyung-soon Shin , Seung-jun Lee
发明人： Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ji-young Bae , Ung-hwan Pi , Hyung-soon Shin , Seung-jun Lee
IPC分类号： G11C11/00
CPC分类号： G11C11/1657 , G11B2005/0002 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： An information storage device includes a memory region having a magnetic track and a write/read unit, and a control circuit connected to the memory region. First and second switching devices are connected to both ends of the magnetic track, and a third switching device is connected to the write/read unit. The control circuit controls the first to third switching devices, and supplies operating current to at least one of the magnetic track and the write/read unit.
摘要翻译：信息存储装置包括具有磁道和写入/读取单元的存储区域以及连接到存储器区域的控制电路。第一和第二开关装置连接到磁道的两端，并且第三开关装置连接到写/读单元。控制电路控制第一至第三开关装置，并向至少一个磁道和写/读单元提供工作电流。

9. 发明申请

US20080137395A1 DATA STORAGE DEVICE USING MAGNETIC DOMAIN WALL MOVEMENT AND METHOD OF OPERATING THE SAME 有权
标题翻译：使用磁畴壁移动的数据存储装置及其操作方法
公开(公告)号：US20080137395A1
公开(公告)日：2008-06-12
申请号：US11764432
申请日：2007-06-18
申请人： In-jun Hwang , Young-jin Cho , Sung-hoon Choa , Kee-won Kim , Kwang-seok Kim
发明人： In-jun Hwang , Young-jin Cho , Sung-hoon Choa , Kee-won Kim , Kwang-seok Kim
IPC分类号： G11C19/00
CPC分类号： G11C11/15 , G11C19/0808 , G11C19/0841
摘要： Provided are a data storage device using magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a first magnetic layer for writing data having two magnetic domains magnetized in opposite directions to each other and a second magnetic layer for storing data formed on at least one side of the first magnetic layer. The data storage device may further include a data recording device connected to both ends of the first magnetic layer and the end of the second magnetic layer which is not adjacent to the first magnetic layer, a read head formed a predetermined distance from the end of the second magnetic layer which is not adjacent to the first magnetic layer, and a current detector connected to the read head and the data recording device.
摘要翻译：提供了使用磁畴壁移动的数据存储装置和操作数据存储装置的方法。数据存储装置包括用于写入具有彼此相反方向磁化的两个磁畴的数据的第一磁性层和用于存储形成在第一磁性层的至少一侧上的数据的第二磁性层。数据存储装置还可以包括连接到第一磁性层的两端和不与第一磁性层相邻的第二磁性层的端部的数据记录装置，从头部的端部形成预定距离的读取头与第一磁性层不相邻的第二磁性层和连接到读取头和数据记录装置的电流检测器。

10. 发明申请

US20070198618A1 Magnetic memory device using magnetic domain motion 有权
标题翻译：磁存储器件采用磁畴运动
公开(公告)号：US20070198618A1
公开(公告)日：2007-08-23
申请号：US11708352
申请日：2007-02-21
申请人： Kee-won Kim , Tae-wan Kim , Young-jin Cho , In-jun Hwang
发明人： Kee-won Kim , Tae-wan Kim , Young-jin Cho , In-jun Hwang
IPC分类号： G06F15/02
CPC分类号： G11C11/16 , G11C19/0808
摘要： Example embodiments may provide a magnetic memory device. The example embodiment magnetic memory devices may include a plurality of memory tracks, bit lines, connectors, a first input portion, and/or selectors. The memory track(s) may be stacked on a substrate to form a multi-stack. A plurality of magnetic domains may be formed in the memory track so that a data bit may be represented by a magnetic domain and may be stored in an array. The bit line(s) may be formed along respective memory tracks. The connector(s) may form a magnetic tunnel junction (MTJ) cell with one data bit region of the memory track. The first input portion may be electrically connected to each memory track and may input a magnetic domain motion signal to move data stored on a data bit region of the memory track to an adjoining data bit region. The selector(s) may select a memory track from a plurality of memory tracks on which a reading and/or writing operation may to be performed.
摘要翻译：示例性实施例可以提供磁存储器装置。示例性实施例磁存储器件可以包括多个存储器轨道，位线，连接器，第一输入部分和/或选择器。存储器轨道可以堆叠在衬底上以形成多堆叠。可以在存储器轨道中形成多个磁畴，使得数据位可以由磁畴表示并且可以存储在阵列中。位线可以沿着各个存储器轨道形成。连接器可以形成具有存储器轨道的一个数据位区域的磁性隧道结（MTJ）单元。第一输入部分可以电连接到每个存储器轨道，并且可以输入磁畴运动信号以将存储在存储器轨道的数据位区域上的数据移动到相邻的数据位区域。选择器可以从其上可以执行读取和/或写入操作的多个存储器轨道中选择存储器轨道。

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