专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050260348A1 Thin film including multi components and method of forming the same 有权
标题翻译：薄膜包括多组分及其形成方法
公开(公告)号：US20050260348A1
公开(公告)日：2005-11-24
申请号：US11176657
申请日：2005-07-08
申请人： Jung-hyun Lee , Dae-sig Kim , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Dae-sig Kim , Yo-sep Min , Young-jin Cho
IPC分类号： C23C16/44 , C23C16/30 , C23C16/34 , C23C16/40 , C23C16/455 , H01L21/316 , C23C16/00 , B32B19/00 , H01L21/31
CPC分类号： C23C16/409 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/45531 , C23C16/45542
摘要： A thin film including multi components and a method of forming the thin film are provided, wherein a method according to an embodiment of the present invention, a substrate is loaded into a reaction chamber. A unit material layer is formed on the substrate. The unit material layer is a mosaic atomic layer composed of two kinds of precursors containing components constituting the thin film. The inside of the reaction chamber is purged, and the MAL is chemically changed. The method of forming the thin film of the present invention requires fewer steps than a conventional method while retaining the advantages of the conventional method, thereby allowing a superior thin film yield in the present invention than previously obtainable.
摘要翻译：提供了包括多组分的薄膜和形成薄膜的方法，其中根据本发明的实施方案的方法将基底装载到反应室中。在基板上形成单位材料层。单元材料层是由包含构成薄膜的成分的两种前体构成的马赛克原子层。反应室的内部被清除，并且MAL被化学地改变。与传统方法相比，形成本发明的薄膜的方法需要更少的步骤，同时保持了常规方法的优点，从而使本发明的薄膜产率优于先前可获得的。

2. 发明授权

US07709377B2 Thin film including multi components and method of forming the same 有权
标题翻译：薄膜包括多组分及其形成方法
公开(公告)号：US07709377B2
公开(公告)日：2010-05-04
申请号：US11176657
申请日：2005-07-08
申请人： Jung-hyun Lee , Dae-sig Kim , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Dae-sig Kim , Yo-sep Min , Young-jin Cho
IPC分类号： H01L21/469 , H01L21/4763
CPC分类号： C23C16/409 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/45531 , C23C16/45542
摘要： A thin film including multi components and a method of forming the thin film are provided, wherein a method according to an embodiment of the present invention, a substrate is loaded into a reaction chamber. A unit material layer is formed on the substrate. The unit material layer may be formed of a mosaic atomic layer composed of two kinds of precursors containing components constituting the thin film. The inside of the reaction chamber is purged, and the MAL is chemically changed. The method of forming the thin film of the present invention requires fewer steps than a conventional method while retaining the advantages of the conventional method, thereby allowing a superior thin film yield in the present invention than previously obtainable.
摘要翻译：提供了包括多组分的薄膜和形成薄膜的方法，其中根据本发明的实施方案的方法将基底装载到反应室中。在基板上形成单位材料层。单元材料层可以由包含构成薄膜的成分的两种前体构成的马赛克原子层形成。反应室的内部被清除，并且MAL被化学地改变。与传统方法相比，形成本发明的薄膜的方法需要更少的步骤，同时保持了常规方法的优点，从而使本发明的薄膜产率优于先前可获得的。

3. 发明授权

US06752869B2 Atomic layer deposition using organometallic complex with &bgr;-diketone ligand 失效
标题翻译：使用有机金属络合物与β-二酮配体的原子层沉积
公开(公告)号：US06752869B2
公开(公告)日：2004-06-22
申请号：US10160111
申请日：2002-06-04
申请人： Jung-hyun Lee , Dae-sig Kim , Yo-sep Min , Young-jin Cho
发明人： Jung-hyun Lee , Dae-sig Kim , Yo-sep Min , Young-jin Cho
IPC分类号： C30B2504
CPC分类号： C23C16/45542 , C23C16/40 , C23C16/405 , C23C16/45553 , C23C16/5096
摘要： An atomic layer deposition (ALD) method, whereby an organometallic complex with a &bgr;-diketone ligand is chemically adsorbed onto a substrate and oxidized by activated oxygen radicals to deposit an atomic metal oxide layer on the substrate, uses reactive oxygen radicals generated using plasma and an organometallic complex having a &bgr;-diketone ligand as a precursor, which could not be used in a thermal ALD method using oxygen or water as an oxidizing agent, to address and solve the problem of the removal of organic substances using organometallic complexes with &bgr;-diketone ligands, thereby enabling diversification of the precursors for ALD and formation of excellent oxide films at low temperatures.
摘要翻译：原子层沉积（ALD）方法，其中具有β-二酮配体的有机金属络合物被化学吸附到基底上并被活性氧自由基氧化以在基底上沉积原子金属氧化物层，使用使用等离子体产生的活性氧自由基，具有β-二酮配体作为前体的有机金属配合物，其不能用于使用氧或水作为氧化剂的热ALD方法，以解决和解决使用有机金属络合物除去有机物质的问题，二酮配体，从而使ALD前体多样化，并在低温下形成优异的氧化膜。

4. 发明授权

US6080593A Method of manufacturing ferroelectric memory 失效
标题翻译：铁电存储器的制造方法
公开(公告)号：US6080593A
公开(公告)日：2000-06-27
申请号：US123424
申请日：1998-07-28
申请人： Dae-sig Kim , Il-sub Chung
发明人： Dae-sig Kim , Il-sub Chung
IPC分类号： H01L21/8247 , H01B3/12 , H01L21/28 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L29/78 , H01L29/788 , H01L29/792 , H01L29/92 , H01L21/00
CPC分类号： H01L21/28291 , H01L29/78391
摘要： A method of manufacturing a ferroelectric memory of MFS- or MFIS-type includes the steps of forming on a substrate an insulating layer for preventing reaction at an interface between a ferroelectric material and a silicon substrate, forming a ferroelectric layer on the insulating layer, reacting a material of the insulating layer with a material of the ferroelectric layer, to transform the insulating layer into part of the ferroelectric layer, and forming an electrode on the ferroelectric layer. Since the insulating layer is formed between a substrate and a ferroelectric material, undesirable reaction between the two substances is prevented. The insulating layer is completely absorbed into the ferroelectric layer due to diffusion during deposition of the ferroelectric layer, to form an MFS-type ferroelectric memory. When some of the insulating layer remains, the ferroelectric memory becomes an MFIS-type. However, since the remaining insulating layer, which corresponds to the insulating layer of the MFIS-type ferroelectric memory, is very thin. Accordingly, characteristics of the MFIS-type ferroelectric memory improve.
摘要翻译：制造MFS-或MFIS型铁电存储器的方法包括以下步骤：在基板上形成用于防止在铁电材料和硅基板之间的界面处的反应的绝缘层，在绝缘层上形成铁电层，使绝缘层反应使用具有铁电层的材料的绝缘层的材料，将绝缘层变换为铁电层的一部分，并在铁电层上形成电极。由于绝缘层形成在基板和铁电体材料之间，因此防止了两种物质之间的不期望的反应。由于铁电层的沉积期间的扩散，绝缘层被完全吸收到铁电体层中，形成MFS型铁电体存储器。当一部分绝缘层残留时，铁电存储器成为MFIS型。然而，由于与MFIS型铁电体存储器的绝缘层相对应的剩余绝缘层非常薄。因此，MFIS型铁电体存储器的特性提高。

5. 发明授权

US06424800B1 Bubbler 失效
标题翻译：起泡器
公开(公告)号：US06424800B1
公开(公告)日：2002-07-23
申请号：US09665114
申请日：2000-09-20
申请人： Dae-sig Kim
发明人： Dae-sig Kim
IPC分类号： C23C1400
CPC分类号： C23C16/4481
摘要： A bubbler for use in vaporizing a precursor (source) for thin film deposition includes a vaporizer chamber, the vaporizer chamber having defined therein a source inlet hole, an exhaust hole and a carrier gas inlet hole; a source supply unit connected to the source inlet hole; a plate installed in the vaporizer chamber, the plate being adapted to receive a source entering into the vaporizer chamber; and a heater source installed in the vaporizer chamber, the heater source being adapted to evenly heat the plate.
摘要翻译：用于汽化用于薄膜沉积的前体（源）的起泡器包括蒸发器室，其中限定有源入口孔，排气孔和载气入口孔的蒸发器室; 连接到源入口孔的源供应单元; 安装在所述蒸发器室中的板，所述板适于接收进入所述蒸发器室的源; 以及安装在所述蒸发器室中的加热器源，所述加热器源适于均匀地加热所述板。

6. 发明授权

US06333066B1 Method for forming PZT thin film using seed layer 有权
标题翻译：使用种子层形成PZT薄膜的方法
公开(公告)号：US06333066B1
公开(公告)日：2001-12-25
申请号：US09196762
申请日：1998-11-20
申请人： Dae-sig Kim
发明人： Dae-sig Kim
IPC分类号： C23C1640
CPC分类号： H01L28/56 , C23C16/0272 , C23C16/409 , H01L41/1876 , H01L41/316 , H01L41/319
摘要： A method for forming a PZT (lead zirconate titanate: Pb(ZrxTi1−x)O3) thin film using a seed layer is provided. In the method for forming a PZT thin film, PZT is grown on a PbO seed layer or a PZT seed layer of a perovskite phase formed by injecting excess Pb. The PbO seed layer or the PZT seed layer of a perovskite phase facilitates creation of perovskite PZT nuclei, thereby growing small and uniform PZT grains consisting of a perovskite phase.
摘要翻译：提供了使用种子层形成PZT（锆钛酸铅：Pb（Zr x Ti 1-x）O 3）薄膜的方法。在形成PZT薄膜的方法中，PZT生长在通过注入过量Pb形成的钙钛矿相的PbO种子层或PZT晶种层上。钙钛矿相的PbO种子层或PZT晶种层有助于产生钙钛矿PZT核，从而生长由钙钛矿相组成的小且均匀的PZT晶粒。

7. 发明授权

US5603169A Bubbler for solid metal-organic percursors 失效
标题翻译：膨胀器用于固体金属有机物
公开(公告)号：US5603169A
公开(公告)日：1997-02-18
申请号：US536819
申请日：1995-09-29
申请人： Dae-sig Kim
发明人： Dae-sig Kim
IPC分类号： C23C16/18 , C23C16/448 , H01L21/205 , H01L21/285 , F26B17/00
CPC分类号： C23C16/4481
摘要： A bubbler for solid metal-organic precursors is described. The bubbler includes a bubbler body, a carrier gas feed tube, an exhaust tube, a compressing plate and a pair of porous thin plates. A carrier gas is fed into a mass of metal-organic precursors through a feed tube which is connected with the bottom of the bubbler body. The exhaust tube is set away from the mass of metal-organic precursors and drains the carrier gas passing through the precursors. The compressing plate has many holes and is movable up and down along the wall of the bubbler body so that it may be positioned according to the amount of the precursors. The upper porous thin plate is located between the exhaust tube and the compressing plate, and the lower porous thin plate is located above the leading end of the feed tube, giving support to the mass of the metal-organic precursors. That is, the precursors are placed on the lower porous thin plate and there is a room between the lower porous thin plate and the bottom of the bubbler body.
摘要翻译：描述了用于固体金属 - 有机前体的起泡器。起泡器包括起泡器体，载气供给管，排气管，压缩板和一对多孔薄板。通过与起泡器主体的底部连接的进料管将载气输送到大量金属 - 有机前体中。排气管远离金属 - 有机前体的物质，并排出通过前体的载气。压缩板具有许多孔，并且可以沿着起泡器主体的壁上下移动，使得其可以根据前体的量来定位。上多孔薄板位于排气管和压缩板之间，下多孔薄板位于进料管的前端上方，为金属有机前体的质量提供支撑。也就是说，前体被放置在下多孔薄板上，并且在下多孔薄板和起泡器主体的底部之间存在一个房间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式