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71. 发明申请

US20130009202A1 GROUP III NITRIDE SEMICONDUCTOR DEVICE, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译： III族氮化物半导体器件，制备III族氮化物半导体器件的方法
公开(公告)号：US20130009202A1
公开(公告)日：2013-01-10
申请号：US13538513
申请日：2012-06-29
申请人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
发明人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
IPC分类号： H01L33/32
CPC分类号： H01L33/14 , B82Y20/00 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/0014 , H01S5/0202 , H01S5/0421 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： A group-III nitride semiconductor device includes a light emitting layer emitting light of a wavelength in the range of 480 to 600 nm; a first contact layer over the light emitting layer; a second contact layer in direct contact with the first contact layer; and a metal electrode in direct contact with the second contact layer. The first and second contact layers comprise a p-type gallium nitride-based semiconductor. The p-type dopant concentration of the first contact layer is lower than that of the second contact layer. The light emitting layer comprises a gallium nitride-based semiconductor. The interface between the first and second contact layers tilts at an angle of not less than 50 degrees and smaller than 130 degrees from a plane orthogonal to a reference axis extending along the c-axis. The second contact layer has a thickness within the range of 1 to 50 nm.
摘要翻译： III族氮化物半导体器件包括发射波长在480至600nm范围内的光的发光层; 在所述发光层上的第一接触层; 与所述第一接触层直接接触的第二接触层; 以及与第二接触层直接接触的金属电极。第一和第二接触层包括p型氮化镓基半导体。第一接触层的p型掺杂剂浓度低于第二接触层的p型掺杂剂浓度。发光层包括氮化镓基半导体。第一和第二接触层之间的界面从与沿着c轴延伸的参考轴正交的平面以不小于50度且小于130度的角度倾斜。第二接触层的厚度在1〜50nm的范围内。

72. 发明申请

US20120327967A1 GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE, EPITAXIAL SUBSTRATE, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译： III族氮化物半导体激光器件，外延衬底，制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120327967A1
公开(公告)日：2012-12-27
申请号：US13480178
申请日：2012-05-24
申请人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
发明人： Yohei ENYA , Yusuke YOSHIZUMI , Takashi KYONO , Takamichi SUMITOMO , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
IPC分类号： H01S5/323 , H01L33/32
CPC分类号： H01S5/3201 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01S5/0202 , H01S5/028 , H01S5/0425 , H01S5/2009 , H01S5/2031 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2301/176 , H01S2304/04
摘要： A nitride semiconductor laser device includes a p-type cladding layer, an active layer and an n-type cladding layer. The p-type cladding layer and the n-type cladding layer comprise indium and aluminum as group-III constituent. The n-type cladding layer, active layer and p-type cladding layer are arranged along the normal of a semi-polar semiconductor surface of a substrate. This surface tilts toward the m-axis of the hexagonal nitride by an angle of 63 degrees or more and smaller than 80 degrees from a plane orthogonal to a reference axis extending along the c-axis thereof. The active layer generates light having a peak wavelength in the range of 480 to 600 nm. The refractive indices of the n-type cladding layer and p-type cladding layer are smaller than that of GaN. The n-type cladding layer has a thickness of 2 μm or more while the p-type cladding layer has a thickness of 500 nm or more.
摘要翻译：氮化物半导体激光器件包括p型覆层，有源层和n型覆层。 p型覆层和n型覆层包含铟和铝作为III族成分。 n型包覆层，有源层和p型覆层沿着基板的半极性半导体表面的法线配置。该表面从垂直于沿其c轴延伸的基准轴的平面向六角形氮化物的m轴倾斜63度以上且小于80度的角度。有源层产生峰值波长在480至600nm范围内的光。 n型包覆层和p型覆层的折射率小于GaN的折射率。 n型覆层的厚度为2μm以上，p型覆层的厚度为500nm以上。

73. 发明授权

US08304269B2 Method of fabricating group III nitride semiconductor device 有权
标题翻译：制备III族氮化物半导体器件的方法
公开(公告)号：US08304269B2
公开(公告)日：2012-11-06
申请号：US13112714
申请日：2011-05-20
申请人： Takashi Kyono , Yusuke Yoshizumi , Yohei Enya , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Takao Nakamura
发明人： Takashi Kyono , Yusuke Yoshizumi , Yohei Enya , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Takao Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L21/02389 , B82Y20/00 , H01L21/02433 , H01L21/02458 , H01L21/02491 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/16 , H01L33/32 , H01S5/305 , H01S5/3086 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device 11a includes a group III nitride semiconductor supporting base 13, a GaN based semiconductor region 15, an active layer active layer 17, and a GaN semiconductor region 19. The primary surface 13a of the group III nitride semiconductor supporting base 13 is not any polar plane, and forms a finite angle with a reference plane Sc that is orthogonal to a reference axis Cx extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region 15 is grown on the semipolar primary surface 13a. A GaN based semiconductor layer 21 of the GaN based semiconductor region 15 is, for example, an n-type GaN based semiconductor, and the n-type GaN based semiconductor is doped with silicon. A GaN based semiconductor layer 23 of an oxygen concentration of 5×1016 cm−3 or more provides an active layer 17 with an excellent crystal quality, and the active layer 17 is grown on the primary surface of the GaN based semiconductor layer 23.
摘要翻译：提供具有优异表面形态的具有氮化镓基半导体膜的III族氮化物半导体器件。 III族氮化物光半导体器件11a包括III族氮化物半导体支撑基底13，GaN基半导体区域15，有源层有源层17和GaN半导体区域19.第III族氮化物半导体支撑基底13的主表面13a 基座13不是任何极性平面，并且与参考平面Sc形成有限的角度，该参考平面Sc与在III族氮化物半导体的c轴方向上延伸的基准轴Cx正交。在半极性主表面13a上生长GaN基半导体区域15。 GaN系半导体区域15的GaN系半导体层21例如为n型GaN系半导体，n型GaN系半导体掺杂有硅。氧浓度为5×1016cm-3以上的GaN系半导体层23提供具有优异晶体质量的有源层17，并且在GaN基半导体层23的主表面上生长有源层17。

74. 发明申请

US20120269222A1 NITRIDE SEMICONDUCTOR LASER AND EPITAXIAL SUBSTRATE 有权
标题翻译：氮化物半导体激光和外延衬底
公开(公告)号：US20120269222A1
公开(公告)日：2012-10-25
申请号：US13366636
申请日：2012-02-06
申请人： Takashi KYONO , Yohei ENYA , Takamichi SUMITOMO , Yusuke YOSHIZUMI , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
发明人： Takashi KYONO , Yohei ENYA , Takamichi SUMITOMO , Yusuke YOSHIZUMI , Masaki UENO , Katsunori YANASHIMA , Kunihiko TASAI , Hiroshi NAKAJIMA
IPC分类号： H01S5/343
CPC分类号： H01S5/3201 , B82Y20/00 , H01S5/028 , H01S5/2009 , H01S5/2031 , H01S5/3063 , H01S5/3202 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser includes an electrically conductive support substrate with a primary surface of a gallium nitride based semiconductor, an active layer provided above the primary surface, and a p-type cladding region provided above the primary surface. The primary surface is inclined relative to a reference plane perpendicular to a reference axis extending in a direction of the c-axis of the gallium nitride based semiconductor. The p-type cladding region includes first and second p-type Group III nitride semiconductor layers. The first p-type semiconductor layer comprises an InAlGaN layer including built-in anisotropic strain. The second p-type semiconductor layer comprises semiconductor different from material of the InAlGaN layer. The first nitride semiconductor layer is provided between the second p-type semiconductor layer and the active layer. The second p-type semiconductor layer has a resistivity lower than that of the first p-type semiconductor layer.
摘要翻译：氮化物半导体激光器包括具有氮化镓基半导体的主表面的导电支撑衬底，设置在主表面上方的有源层和设置在主表面上的p型覆层区域。主表面相对于垂直于在氮化镓基半导体的c轴方向上延伸的参考轴的参考平面倾斜。 p型包层区域包括第一和第二p型III族氮化物半导体层。第一p型半导体层包括包括内置各向异性应变的InAlGaN层。第二p型半导体层包括与InAlGaN层的材料不同的半导体。第一氮化物半导体层设置在第二p型半导体层和有源层之间。第二p型半导体层的电阻率低于第一p型半导体层的电阻率。

75. 发明授权

US08228963B2 Gallium nitride-based semiconductor optical device, method of fabricating gallium nitride-based semiconductor optical device, and epitaxial wafer 失效
标题翻译：氮化镓系半导体光学元件，氮化镓系半导体光学元件的制造方法以及外延片
公开(公告)号：US08228963B2
公开(公告)日：2012-07-24
申请号：US12715860
申请日：2010-03-02
申请人： Yohei Enya , Yusuke Yoshizumi , Hideki Osada , Keiji Ishibashi , Katsushi Akita , Masaki Ueno
发明人： Yohei Enya , Yusuke Yoshizumi , Hideki Osada , Keiji Ishibashi , Katsushi Akita , Masaki Ueno
IPC分类号： H01S5/00
CPC分类号： H01L33/18 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/0262 , H01L33/32 , H01S5/20 , H01S5/2009 , H01S5/3202 , H01S5/34333
摘要： A gallium nitride-based semiconductor optical device is provided that includes an indium-containing gallium nitride-based semiconductor layer that exhibit low piezoelectric effect and high crystal quality. The gallium nitride-based semiconductor optical device 11a includes a GaN support base 13, a GaN-based semiconductor region 15, and well layers 19. A primary surface 13a tilts from a surface orthogonal to a reference axis that extends in a direction from one crystal axis of the m-axis and the a-axis of GaN toward the other crystal axis. The tilt angle AOFF is 0.05 degree or more to less than 15 degrees. The angle AOFF is equal to the angle defined by a vector VM and a vector VN. The inclination of the primary surface is shown by a typical m-plane SM and m-axis vector VM. The GaN-based semiconductor region 15 is provided on the primary surface 13a. In the well layers 19 in an active layer 17, both the m-plane and the a-plane of the well layers 19 tilt from a normal axis AN of the primary surface 13a. The indium content of the well layers 19 is 0.1 or more.
摘要翻译：提供一种氮化镓系半导体光学元件，其包括显示低压电效应和高结晶质量的含铟氮化镓系半导体层。氮化镓系半导体光学元件11a包括GaN支撑基底13，GaN基半导体区域15以及阱层19.初级表面13a从与从一个晶体的方向延伸的参考轴正交的表面倾斜 m轴的a轴和另一个晶轴的GaN的a轴。倾角AOFF为0.05度以上至小于15度。角度AOFF等于由矢量VM和矢量VN定义的角度。主表面的倾角由典型的m面SM和m轴矢量VM表示。 GaN基半导体区域15设置在主表面13a上。在有源层17的阱层19中，阱层19的m面和a面都从主面13a的法线轴AN倾斜。阱层19的铟含量为0.1以上。

76. 发明申请

US20120142130A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 失效
标题翻译： III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120142130A1
公开(公告)日：2012-06-07
申请号：US13335560
申请日：2011-12-22
申请人： Yusuke YOSHIZUMI , Shimpei TAKAGI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
发明人： Yusuke YOSHIZUMI , Shimpei TAKAGI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
IPC分类号： H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/0202 , H01S5/0287 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：本发明提供一种III族氮化物半导体激光器件，其具有激光腔的高激光产生量，其中六边形III族氮化物的c轴向m轴倾斜的支撑基底的半极性表面。第一和第二断裂面形成激光腔与m-n平面相交。 III族氮化物半导体激光器件具有在m-n平面和半极性表面之间的交线的方向上延伸的激光波导。在激光结构中，第一表面与第二表面相对。第一和第二断裂面从第一表面的边缘延伸到第二表面的边缘。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

77. 发明申请

US20120119240A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：氮化物半导体发光器件
公开(公告)号：US20120119240A1
公开(公告)日：2012-05-17
申请号：US13294034
申请日：2011-11-10
申请人： Takashi KYONO , Yohei ENYA , Yusuke YOSHIZUMI , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO
发明人： Takashi KYONO , Yohei ENYA , Yusuke YOSHIZUMI , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO
IPC分类号： H01L33/30
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/3201 , H01S5/3202 , H01S5/3211
摘要： A nitride semiconductor light emitting device is provided. A core semiconductor region, a first cladding region, and a second cladding region are mounted on a nonpolar primary surface of a support substrate of GaN which is not the polar plane. The core semiconductor region includes an active layer and a carrier block layer. The first cladding region includes an n-type AlGaN cladding layer and an n-type InAlGaN cladding layer. The n-type InAlGaN cladding layer is provided between the n-type AlGaN cladding layer and the active layer. A misfit dislocation density at an interface is larger than that at an interface. The AlGaN cladding layer is lattice-relaxed with respect to the GaN support substrate and the InAlGaN cladding layer is lattice-relaxed with respect to the AlGaN cladding layer.
摘要翻译：提供一种氮化物半导体发光器件。核心半导体区域，第一包层区域和第二包层区域安装在不是极平面的GaN的支撑衬底的非极性主表面上。核心半导体区域包括有源层和载流子阻挡层。第一包层区域包括n型AlGaN包覆层和n型InAlGaN包覆层。 n型InAlGaN包层设置在n型AlGaN包层和有源层之间。界面处的错配位错密度大于界面处的位错密度。 AlGaN包层相对于GaN支撑衬底是晶格弛豫的，并且InAlGaN包层相对于AlGaN包层是晶格弛豫的。

78. 发明申请

US20120088326A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 有权
标题翻译： III族氮化物半导体激光器件，以及制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120088326A1
公开(公告)日：2012-04-12
申请号：US13277806
申请日：2011-10-20
申请人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
发明人： Yusuke YOSHIZUMI , Yohei ENYA , Takashi KYONO , Masahiro ADACHI , Katsushi AKITA , Masaki UENO , Takamichi SUMITOMO , Shinji TOKUYAMA , Koji KATAYAMA , Takao NAKAMURA , Takatoshi IKEGAMI
IPC分类号： H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01S5/0014 , H01S5/0021 , H01S5/0202 , H01S5/2009 , H01S5/3202 , H01S5/3211
摘要： A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar.
摘要翻译：制备III族氮化物半导体激光器件的方法包括：制备六方晶III族氮化物半导体的衬底，其中衬底具有半极性主表面; 形成具有激光结构的基板产品，阳极电极和阴极电极，其中所述激光器结构包括所述基板和半导体区域，并且所述半导体区域形成在所述半极性主表面上; 在六方晶III族氮化物半导体的a轴的方向上划分基板产品的第一表面; 并且通过压靠衬底产品的第二表面进行衬底产品的分解，以形成另一衬底产品和激光棒。

79. 发明授权

US08148716B2 Group III nitride semiconductor optical device, epitaxial substrate, and method of making group III nitride semiconductor light-emitting device 有权
标题翻译： III族氮化物半导体光学器件，外延衬底，以及制造III族氮化物半导体发光器件的方法
公开(公告)号：US08148716B2
公开(公告)日：2012-04-03
申请号：US12837904
申请日：2010-07-16
申请人： Masaki Ueno , Yohei Enya , Takashi Kyono , Yusuke Yoshizumi
发明人： Masaki Ueno , Yohei Enya , Takashi Kyono , Yusuke Yoshizumi
IPC分类号： H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/2201 , H01S5/3202 , H01S2302/00
摘要： A group III nitride semiconductor optical device includes: a substrate comprising a group III nitride semiconductor; a first group-III nitride semiconductor region on a primary surface of the substrate; a second group-III nitride semiconductor region on the primary surface of the substrate; and an active layer between the first group-III nitride semiconductor region and the second group-III nitride semiconductor region. The primary surface of the substrate tilts at a tilt angle in the range of 63 degrees to smaller than 80 degrees toward the m-axis of the group III nitride semiconductor from a plane perpendicular to a reference axis extending along the c-axis of the group III nitride semiconductor. The first group-III nitride semiconductor region, the active layer, and the second group-III nitride semiconductor region are arranged in the direction of the normal axis to the primary surface of the substrate. The active layer is configured to produce light having a wavelength in the range of 580 nm to 800 nm. The active layer includes an epitaxial semiconductor layer comprising a gallium nitride based semiconductor containing indium as a group III element. The epitaxial semiconductor layer has an indium content ranging from 0.35 to 0.65. The c-axis of the gallium nitride based semiconductor tilts from the normal axis. The reference axis is oriented in the direction of either the axis [0001] or [000−1] of the group III nitride semiconductor.
摘要翻译： III族氮化物半导体光学器件包括：包含III族氮化物半导体的衬底; 在所述基板的主表面上的第一III族氮化物半导体区域; 在所述基板的主表面上的第二III族氮化物半导体区域; 以及在所述第一III族氮化物半导体区域和所述第二III族氮化物半导体区域之间的有源层。基板的主表面从垂直于沿着该组的c轴延伸的基准轴的平面向第III族氮化物半导体的m轴倾斜63度至小于80度的范围内的倾斜角度 III族氮化物半导体。第一III族氮化物半导体区域，有源层和第二III族氮化物半导体区域沿着与基板的主表面的法线方向排列。有源层被配置为产生波长在580nm至800nm范围内的光。有源层包括包含含有铟作为III族元素的氮化镓基半导体的外延半导体层。外延半导体层的铟含量为0.35〜0.65。氮化镓基半导体的c轴从法线倾斜。参考轴在III族氮化物半导体的[0001]或[000-1]轴的方向上取向。

80. 发明申请

US20120058583A1 GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE 有权
标题翻译： III族氮化物半导体激光器件及其制备III族氮化物半导体激光器件的方法
公开(公告)号：US20120058583A1
公开(公告)日：2012-03-08
申请号：US13240368
申请日：2011-09-22
申请人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
发明人： Yusuke Yoshizumi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Katsushi Akita , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
IPC分类号： H01L33/62
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/3202 , H01S2301/14
摘要： Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
摘要翻译：提供了在六边形III族氮化物的c轴朝向m轴倾斜的支撑基座的半极性表面上具有允许低阈值电流的激光腔的III族氮化物半导体激光器件。第一和第二断裂面27,29以形成与m-n平面相交的激光腔。 III族氮化物半导体激光器件11具有在m-n平面和半极性表面17a之间的交线的方向上延伸的激光波导。在激光结构13中，第一表面13a与第二表面13b相对。第一和第二断裂面27,29从第一表面的边缘13c延伸到第二表面13b的边缘13d。断裂面不是通过干蚀刻形成的，并且与常规使用的切割面不同，例如c面，m面或a平面。

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