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    • 71. 发明申请
    • METHOD FOR FORMING SILICON DOTS
    • 形成硅胶的方法
    • US20100260944A1
    • 2010-10-14
    • US12739982
    • 2008-10-14
    • Atsushi TomyoHirokazu KakiEiji Takahashi
    • Atsushi TomyoHirokazu KakiEiji Takahashi
    • C23C16/505C23C16/24
    • H01L21/02381C01B33/02C23C16/0245C23C16/04C23C16/24C23C16/509H01L21/02532H01L21/02601H01L21/0262H01L21/02658
    • A method for forming silicon dots which can form silicon dots at a relatively low temperature, with good controllability of the particle diameter of silicon dots depending on the particle diameter of silicon dots to be formed.The method for forming silicon dots comprises producing inductively coupled plasma from a gas for forming silicon dots provided within the plasma producing chamber by applying a high-frequency power to an antenna with reduced inductance placed within the plasma producing chamber to form silicon dots on a substrate S disposed within the chamber in the presence of the inductively coupled plasma. Conditions for a pretreatment of the substrate prior to the formation of silicon dots, the temperature of the substrate in forming silicon dots and the gas pressure in the plasma producing chamber during the formation of silicon dots are controlled depending on the particle diameter of the silicon dots.
    • 一种在相对较低的温度下形成硅点的硅点的形成方法,具有良好的硅点粒径的可控性,这取决于待形成的硅点的粒径。 形成硅点的方法包括:通过向位于等离子体产生室内的具有减小的电感的天线施加高频电力,在等离子体产生室内形成硅点的气体中产生电感耦合等离子体,以在衬底上形成硅点 S在电感耦合等离子体的存在下设置在腔室内。 在形成硅点之前对基板进行预处理的条件,形成硅点的基板的温度和形成硅点期间的等离子体产生室中的气体压力根据硅点的粒径来控制 。
    • 72. 发明申请
    • METHOD FOR FORMING SILICON-BASED THIN FILM BY PLASMA CVD METHOD
    • 通过等离子体CVD法形成硅基薄膜的方法
    • US20100210093A1
    • 2010-08-19
    • US12513362
    • 2007-10-29
    • Kenji KatoEiji Takahashi
    • Kenji KatoEiji Takahashi
    • H01L21/205
    • C23C16/505C23C16/24H01L21/02532H01L21/0262H01L31/1804Y02E10/547Y02P70/521
    • In the method for forming a silicon-based thin film by the plasma CVD method using high-frequency excitation, a polycrystalline silicon-based thin film having high degree of crystallization is formed relatively at a low temperature, economically, and productively.The polycrystalline silicon-based thin film is formed in such a state that the pressure of gas during formation of the film is selected and determined from the range of 0.0095 Pa to 64 Pa; the ratio (Md/Ms) of a supply flow rate Md of a diluting gas to a supply flow rate Ms of a film-forming material gas introduced into a deposition chamber is selected and determined from the range of 0 to 1200; the high-frequency power density is selected and determined from the range of 0.0024 W/cm3 to 11 W/cm3; the plasma potentials during formation of the film is maintained to 25 V or lower, and the electron density in the plasma is maintained to 1×1010 electrons/cm3 or higher; and the combination of those pressures and the like is such a combination that attains the ratio (Ic/Ia=degree of crystallization) of Ic derived from the crystallized silicon component to Ia derived from the amorphous silicon component in the evaluation of the crystallizability of silicon in the film by the laser Raman scattering spectroscopy is 8 or higher.
    • 在通过使用高频激发的等离子体CVD法形成硅基薄膜的方法中,经济地且高效地相对地在低温下形成具有高结晶度的多晶硅基薄膜。 形成多晶硅系薄膜的状态是,从0.0095Pa〜64Pa的范围选择并确定膜形成时的气体压力; 稀释气体的供给流量Md与导入淀积室的成膜材料气体的供给流量Ms的比(Md / Ms)从0〜1200的范围选择并确定; 从0.0024W / cm 3至11W / cm 3的范围选择和确定高频功率密度; 膜形成期间的等离子体电位维持在25V以下,等离子体中的电子密度维持在1×10 10电子/ cm 3以上。 并且这些压力等的组合是这样的组合,其在评估硅的结晶性中达到了从结晶硅组分衍生的Ia与来自非晶硅组分的Ia的比(Ic / Ia =结晶度) 在电影中由激光拉曼散射光谱法测定8或更高。
    • 73. 发明申请
    • Method of detecting interaction between nucleic acid and protein, and apparatus for the same
    • 检测核酸与蛋白质相互作用的方法及其设备
    • US20100159451A1
    • 2010-06-24
    • US12308370
    • 2007-06-14
    • Kazunori IkebukuroRyo KatayamaEiji TakahashiHiroyuki Takamatsu
    • Kazunori IkebukuroRyo KatayamaEiji TakahashiHiroyuki Takamatsu
    • C12Q1/68
    • C12Q1/6804G01N21/171C12Q2537/101C12Q2541/101
    • The invention is to easily detect an interaction between nucleic acid and protein with high sensitivity without the need of sample labeling with a fluorescent molecule or sample anchorage onto a metal thin-film. As means for it, the presence or absence of occurrence of the interaction between nucleic acid and protein in a sample (S) is detected in an optical manner. Specifically, the sample (S) is irradiated with excitation rays (Le) and with measuring rays (L2) for measuring a photothermal effect produced in the sample (S) through the irradiation with the excitation rays (Le). A measurement signal for the photothermal effect in the sample (S) by the excitation rays (Le) is produced on the basis of any phase change of the measuring rays (L2). A temporal variation in the measurement signal is used for making a judgment on the presence or absence of any occurrence of interaction between nucleic acid and protein.
    • 本发明可以容易地以高灵敏度检测核酸和蛋白质之间的相互作用,而不需要用荧光分子或样品锚定物将样品标记在金属薄膜上。 作为其手段,以光学方式检测样品(S)中核酸和蛋白质之间的相互作用的存在或不存在。 具体地,用激发光线(Le)和用于通过激发光线(Le)的照射测量样品(S)中产生的光热效应的测量光线(L2)来照射样品(S)。 基于测量光线(L2)的任何相变,产生通过激发光线(Le)在样品(S)中的光热效应的测量信号。 使用测量信号的时间变化来判断核酸和蛋白质之间是否存在任何相互作用的发生。
    • 77. 发明申请
    • ENGINE CONTROL APPARATUS AND METHOD
    • 发动机控制装置和方法
    • US20090126684A1
    • 2009-05-21
    • US12269959
    • 2008-11-13
    • Taisuke SHIRAISHIEiji TAKAHASHITomonori URUSHIHARA
    • Taisuke SHIRAISHIEiji TAKAHASHITomonori URUSHIHARA
    • F02P5/04
    • F02P23/04F02D41/3041F02M27/042F02P3/01F02P9/007
    • An engine control apparatus has an electric discharge device, a voltage application device, a fuel supplying device, and a control unit. The electric discharge device includes a first electrode and a second electrode. The second electrode is arranged opposite the first electrode to produce radicals within a combustion chamber of an internal combustion engine by a non-equilibrium plasma discharge that is generated between the electrodes before autoignition of the air-fuel mixture occurs. The voltage application device is operatively coupled to the first electrode for applying a voltage between the first and second electrodes to generate the non-equilibrium plasma between the first and second electrodes. The fuel supplying device forms an air-fuel mixture inside the combustion chamber. The control unit is operatively coupled to the electric discharge device to set a discharge start timing of the electric discharge device to occur during an intake stroke of the internal combustion engine.
    • 发动机控制装置具有放电装置,电压施加装置,燃料供给装置以及控制装置。 放电装置包括第一电极和第二电极。 第二电极与第一电极相对布置,以在空燃混合物自燃之前在电极之间产生的非平衡等离子体放电产生内燃机燃烧室内的自由基。 电压施加装置可操作地耦合到第一电极,用于在第一和第二电极之间施加电压,以在第一和第二电极之间产生非平衡等离子体。 燃料供给装置在燃烧室内形成空气 - 燃料混合物。 控制单元可操作地联接到放电装置,以在内燃机的进气冲程期间设定放电装置的排放开始时刻。
    • 78. 发明申请
    • SEMICONDUCTOR STORAGE APPARATUS AND SEMICONDUCTOR INTEGRATED CIRCUIT INCORPORATING THE SAME
    • 半导体存储器件和半导体集成电路并入其中
    • US20090097301A1
    • 2009-04-16
    • US11915816
    • 2006-05-18
    • Eiji TakahashiYoshiyuki Saito
    • Eiji TakahashiYoshiyuki Saito
    • G11C11/24G11C7/00
    • H01L27/101G11C11/404G11C11/4074G11C11/4076H01L27/1085H01L27/10882
    • An object is to provide a semiconductor memory device which can dynamically change the number of memory cells used as by-pass capacitors. In each memory block, one selector signal line is provided in parallel to one word line. In a pair of the word line and the selector signal line adjacent to each other, states are maintained opposite to each other. Further, in a memory block, one branch of a supply line is provided in parallel to one bit line. In each of the memory cells, a first transistor connects a capacitor to the bit line in accordance with the state of the word line. Furthermore, a second transistor connects the same capacitor to the branch of the supply line in accordance with the state of the selector signal line. In the memory cells aligned in a row direction, gates of the first transistors are connected to the same word line, and gates of the second transistors are connected to the same selector signal line.
    • 本发明的目的是提供一种半导体存储器件,其可以动态地改变用作旁路电容器的存储单元的数量。 在每个存储块中,一条选择器信号线与一条字线平行地提供。 在彼此相邻的一对字线和选择器信号线中,状态保持彼此相对。 此外,在存储块中,供给线的一个分支与一个位线并行设置。 在每个存储单元中,第一晶体管根据字线的状态将电容器连接到位线。 此外,第二晶体管根据选择器信号线的状态将相同的电容器连接到电源线的分支。 在沿行方向排列的存储单元中,第一晶体管的栅极连接到相同的字线,第二晶体管的栅极连接到相同的选择信号线。