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61. 发明申请

US20030015736A1 Oxynitride shallow trench isolation and method of formation 有权
公开(公告)号：US20030015736A1
公开(公告)日：2003-01-23
申请号：US10246252
申请日：2002-09-18
发明人： Klaus D. Beyer , Fen F. Jamin , Patrick R. Varekamp
IPC分类号： H01L027/148 , H01L029/768
CPC分类号： H01L21/76224
摘要： An oxynitride material is used to form shallow trench isolation regions in an integrated circuit structure. The oxynitride may be used for both the trench liner and trench fill material. The oxynitride liner is formed by nitriding an initially formed oxide trench liner. The oxynitride trench fill material is formed by directly depositing a high density plasma (HDP) oxide mixture of SiH4 and O2 and adding a controlled amount of NH3 to the plasma mixture. The resultant oxynitride structure is much more resistant to trench fill erosion by wet etch, for example, yet results in minimal stress to the surrounding silicon. To further reduce stress, the nitrogen concentration may be varied by varying the proportion of O2 to NH3 in the plasma mixture so that the nitrogen concentration is maximum at the top of the fill material.

62. 发明申请

US20020190284A1 NOVEL MOS TRANSISTOR STRUCTURE AND METHOD OF FABRICATION 有权
标题翻译：新型MOS晶体管结构及其制造方法
公开(公告)号：US20020190284A1
公开(公告)日：2002-12-19
申请号：US09475452
申请日：1999-12-30
发明人： ANAND MURTHY , ROBERT S. CHAU , PATRICK MORROW
IPC分类号： H01L027/148
CPC分类号： H01L29/66628 , H01L21/28052 , H01L29/1045 , H01L29/1083 , H01L29/165 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/6656 , H01L29/66636
摘要： An MOS device comprising a gate dielectric formed on a first conductivity type region. A gate electrode formed on the gate dielectric. A pair of sidewall spacers are formed along laterally opposite sidewalls of the gate electrode. A pair of deposited silicon or silicon alloy source/drain regions are formed in the first conductivity region and on opposite sides of a gate electrode wherein the silicon or silicon alloy source/drain regions extend beneath the gate electrode and to define a channel region beneath the gate electrode in the first conductivity type region wherein the channel region directly beneath the gate electrode is larger than the channel region deeper into said first conductivity type region.
摘要翻译：一种MOS器件，包括形成在第一导电类型区域上的栅极电介质。形成在栅极电介质上的栅电极。沿着栅电极的横向相对的侧壁形成一对侧壁间隔物。一对沉积的硅或硅合金源极/漏极区域形成在栅电极的第一导电区域和相对侧上，其中硅或硅合金源极/漏极区域在栅极电极下方延伸并且限定在栅电极下方的沟道区域第一导电类型区域中的栅极电极，其中栅电极正下方的沟道区域大于深入所述第一导电类型区域的沟道区域。

63. 发明申请

US20020185666A1 Bi-level digit line architecture for high density drams 失效
标题翻译：双层数字线结构，用于高密度drams
公开(公告)号：US20020185666A1
公开(公告)日：2002-12-12
申请号：US10212900
申请日：2002-08-05
发明人： Brent Keeth
IPC分类号： H01L027/148
CPC分类号： H01L27/10885 , H01L23/5225 , H01L27/10897 , H01L2924/0002 , H01L2924/3011 , Y10S257/907 , Y10S257/908 , H01L2924/00
摘要： There is a bi-level bit line architecture. Specifically, there is a DRAM memory cell and cell array that allows for six square feature area (6F2) cell sizes and avoids the signal to noise problems. Uniquely, the digit lines are designed to lie on top of each other like a double decker overpass road. Additionally, this design allows each digit line to be routed on both conductor layers, for equal lengths of the array, to provide balanced impedance. Now noise will appear as a common mode noise on both lines, and not as differential mode noise that would degrade the sensing operation. Furthermore, digit to digit coupling is nearly eliminated because of the twist design.
摘要翻译：有一个双级位线架构。具体地说，存在DRAM存储单元和单元阵列，其允许六个方形特征区域（6F2）单元尺寸，并避免了信噪比问题。独特的是，数字线设计成彼此顶部，如双层天桥。此外，该设计允许每个数字线路在两个导体层上布线，对于阵列的相同长度，以提供平衡阻抗。现在噪声将作为两条线路上的共模噪声出现，而不是会降低感测操作的差模噪声。此外，由于扭转设计，数字到数字耦合几乎消除了。

64. 发明申请

US20020140005A1 Semiconductor capacitors having tantalum oxide layers and methods for manufacturing the same 有权
标题翻译：具有氧化钽层的半导体电容器及其制造方法
公开(公告)号：US20020140005A1
公开(公告)日：2002-10-03
申请号：US10047706
申请日：2002-01-15
发明人： Jeong-Hee Chung , In-Sung Park , Jae-Hyun Yeo
IPC分类号： H01L021/84 , H01L021/00 , H01L027/148 , H01L029/768
CPC分类号： H01L21/02205 , C23C16/405 , C23C16/45553 , H01L21/02183 , H01L21/02271 , H01L21/0228 , H01L21/31604 , H01L21/31683 , H01L21/31691 , H01L28/40
摘要： Semiconductor capacitors comprise first electrodes, second electrodes, and tantalum oxide layers positioned between the first electrodes and the second electrodes. The tantalum oxide layers are formed by depositing at least one precursor and ozone gas, the at least one precursor represented by the formula: 1 wherein X is selected from the group consisting of nitrogen, sulfur, oxygen, and a carbonyl group; and R1 and R2 are independently alkyl.
摘要翻译：半导体电容器包括位于第一电极和第二电极之间的第一电极，第二电极和氧化钽层。通过沉积至少一种前体和臭氧气体形成氧化钽层，所述至少一种前体由下式表示：其中X选自氮，硫，氧和羰基; 并且R 1和R 2独立地为烷基。

65. 发明申请

US20020121652A1 Image pickup apparatus 有权
标题翻译：摄像设备
公开(公告)号：US20020121652A1
公开(公告)日：2002-09-05
申请号：US09994744
申请日：2001-11-28
发明人： Ryo Yamasaki
IPC分类号： H01L027/148 , H01L029/768 , H04N003/14
CPC分类号： H04N5/23212 , G02B7/34 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14645
摘要： In an image pickup apparatus capable of executing image pickup and focus detection using the phase difference scheme by a solid-state image pickup element, accurate and quick focus detection using the phase difference scheme is realized. In addition, an image pickup apparatus capable of obtaining a high-quality image signal even in an image pickup mode is provided. Each pixel unit of an image pickup element includes first and second photoelectric conversion units for photoelectrically converting light components that have passed through different regions in the exit pupil of an image pickup optical system and is arranged such that the first sensitivity distribution by the first photoelectric conversion unit and the second sensitivity distribution by the second photoelectric conversion unit overlap in a region between the photoelectric conversion units.
摘要翻译：在能够通过固态摄像元件使用相位差方案执行图像拾取和焦点检测的图像拾取装置中，实现使用相位差方案的精确和快速聚焦检测。此外，还提供即使在图像拾取模式下也能够获得高质量图像信号的图像拾取装置。图像拾取元件的每个像素单元包括用于光电转换已经通过图像拾取光学系统的出射光瞳中的不同区域的光分量的第一和第二光电转换单元，并且被布置成使得通过第一光电转换的第一灵敏度分布并且第二光电转换单元的第二灵敏度分布在光电转换单元之间的区域中重叠。

66. 发明申请

US20020117691A1 Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same 有权
标题翻译：使用低介电绝缘层的薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20020117691A1
公开(公告)日：2002-08-29
申请号：US10083261
申请日：2002-02-25
申请人： Samsung Electronics Co., Ltd.
发明人： Joon-Hoo Choi , Wan-Shick Hong , Dae-Jin Kwon , Kwan-Wook Jung , Sang-Gab Kim , Kyu-Ha Jung
IPC分类号： H01L029/768 , G02F001/136 , H01L027/148
CPC分类号： H01L29/66765 , G02F1/136227 , G02F2001/133357 , G02F2001/136236 , H01L27/12 , H01L29/458 , H01L29/4908
摘要： A thin film transistor array substrate is provided. The substrate includes an insulating substrate, a first signal line formed on the insulating substrate, a first insulating layer formed on the first signal line, a second signal line formed on the first insulating layer while crossing over the first signal line, a thin film transistor connected to the first and the second signal lines, a second insulating layer formed on the thin film transistor, the second insulating layer having dielectric constant about 4.0 or less, and the second insulating layer having a first contact hole exposing a predetermined electrode of the thin film transistor, and a first pixel electrode formed on the second insulating layer while being connected to the predetermined electrode of the thin film transistor through the first contact hole.
摘要翻译：提供薄膜晶体管阵列基板。衬底包括绝缘衬底，形成在绝缘衬底上的第一信号线，形成在第一信号线上的第一绝缘层，形成在第一绝缘层上的第二信号线，同时穿过第一信号线，薄膜晶体管连接到第一和第二信号线，形成在薄膜晶体管上的第二绝缘层，第二绝缘层的介电常数约为4.0或更小，第二绝缘层具有暴露薄的预定电极的第一接触孔薄膜晶体管和形成在第二绝缘层上的第一像素电极，同时通过第一接触孔连接到薄膜晶体管的预定电极。

67. 发明申请

US20020109160A1 Solid-state image pickup device and driving method therefor 有权
标题翻译：固体摄像装置及其驱动方法
公开(公告)号：US20020109160A1
公开(公告)日：2002-08-15
申请号：US10046402
申请日：2002-01-14
发明人： Keiji Mabuchi , Takahisa Ueno
IPC分类号： H01L027/148
CPC分类号： H01L27/14609 , H01L27/14812 , H04N5/361
摘要： An MOS type solid-state image pickup device including pixels each of which comprises a photodiode PD, a detection portion N and a transfer transistor QT for transferring the charges accumulated in the photodiode PD to the detection portion N, wherein the gate voltage of the transfer transistor QT when the charges are accumulated in the photodiode PD is set to a negative.
摘要翻译：一种MOS型固态摄像装置，包括像素，每个像素包括光电二极管PD，检测部分N和用于将累积在光电二极管PD中的电荷传送到检测部分N的转移晶体管QT，其中转移的栅极电压将电荷累积在光电二极管PD中的晶体管QT设定为负。

68. 发明申请

US20020100922A1 Solid-state image pickup device 失效
标题翻译：固态图像拾取装置
公开(公告)号：US20020100922A1
公开(公告)日：2002-08-01
申请号：US10060368
申请日：2002-02-01
申请人： Fuji Photo Film Co., Ltd.
发明人： Hiroo Umetsu , Shinji Uya
IPC分类号： H01L027/148
CPC分类号： H01L27/14806 , H01L27/14818 , H01L27/14843 , H01L27/14868
摘要： As solid-state image pickup devices are spread in the world, improvement of performance and reduction of the production cost thereof are required. It is difficult for the solid-state image pickup devices of a configuration of the prior art to meet the requirements. In a solid-state image pickup device to meet the requirements, a large number of photoelectric converters are disposed in a surface of a semiconductor substrate in of a matrix pattern having a plurality of row and a plurality of column, a vertical charge transfer channel is arranged for each column of the photoelectric converters, and a read-cum-transfer electrode is formed for each row of the photoelectric converters such that the read-cum-transfer electrode surrounds each photoelectric converter element of the associated row of the photoelectric converters in a plan view.
摘要翻译：由于固态摄像装置在世界范围内传播，所以需要提高性能和降低其生产成本。现有技术的固态摄像装置难以满足要求。在满足要求的固态图像拾取装置中，在具有多行和多列的矩阵图案的半导体衬底的表面中设置大量光电转换器，垂直电荷转移通道布置在光电转换器的每一列上，并且为每行光电转换器形成读/写传输电极，使得读 - 并传输电极围绕相关行的光电转换器的每个光电转换元件平面图。

69. 发明申请

US20020093015A1 Solid-state image sensor provided with divided photoelectric conversion part 有权
标题翻译：固态图像传感器配有分光电转换部分
公开(公告)号：US20020093015A1
公开(公告)日：2002-07-18
申请号：US10047155
申请日：2002-01-14
申请人： NEC Corporation
发明人： Masayuki Furumiya , Yasutaka Nakashiba
IPC分类号： H01L027/148 , H01L031/072 , H01L031/0336 , H01L031/20 , H01L031/0376
CPC分类号： H04N5/374 , H01L27/14603 , H01L27/14609 , H01L27/14643 , H01L31/035272 , H01L31/103 , H04N5/35527
摘要： A solid-state image sensor compatible with a CMOS manufacturing process outputs the variation of the electric potential according to the number of accumulated electrons of a photoelectric conversion part, however, if the parasitic capacity of the photoelectric conversion part is C and the output voltage is V, VnullQ/C and the solid-state image sensor has a defect that when the area of the photoelectric conversion part is simply increased to enhance the sensitivity, the parasitic capacity C is increased in proportion and the variation V of the electric potential by signal charges cannot be increased to an expected degree. A photoelectric conversion part is divided into a first region and a second region formed next to the first region, MOSFET for setting constant potential using a P-type well layer between the first region and the second region for a channel region is provided, in case a channel region of MOSFET for control is formed by the P-type well layer between the second region and a drain of conventional type MOSFET for control, a two-stage incident light quantity-output voltage characteristic can be acquired for the quantity of incident light and the sensitivity at low illuminance can be enhanced.
摘要翻译：与CMOS制造工序兼容的固态图像传感器根据光电转换部的积存电子数输出电位的变化，但是如果光电转换部的寄生电容为C，输出电压为 V，V = Q / C，并且固态图像传感器具有当光电转换部分的面积被简单地增加以提高灵敏度的缺陷时，寄生电容C的比例增加，电位的变化V 信号费不能提高到预期的程度。光电转换部分被分成与第一区域相邻形成的第一区域和第二区域，设置用于沟道区域的第一区域和第二区域之间的P型阱层用于设定恒定电位的MOSFET，用于控制的MOSFET的沟道区域由用于控制的常规型MOSFET的第二区域和漏极之间的P型阱层形成，可以获取入射光量的两级入射光量 - 输出电压特性并且可以提高低照度下的灵敏度。

70. 发明申请

US20020084475A1 Method of fabricating X-ray detecting device 有权
标题翻译：制造X射线检测装置的方法
公开(公告)号：US20020084475A1
公开(公告)日：2002-07-04
申请号：US10025905
申请日：2001-12-26
发明人： Kyo Ho Moon
IPC分类号： H01L029/768 , H01L027/148
CPC分类号： H01L31/085 , H01L27/14676
摘要： A method of fabricating an X-ray detecting device that is capable of preventing breakage of a transparent electrode. In the method, patterning of first and second insulating films occurs at different etching rates, with an etching ratio of the second insulating material to the first insulating material being greater than 1. Accordingly, undercut of the first and second insulating materials can be prevented. This stabilizes the step coverage of a subsequently formed transparent electrode.
摘要翻译：一种制造能够防止透明电极断裂的X射线检测装置的方法。在该方法中，第一绝缘膜和第二绝缘膜的图案化以不同的蚀刻速率发生，第二绝缘材料与第一绝缘材料的蚀刻比大于1.因此，可以防止第一绝缘材料和第二绝缘材料的底切。这使得随后形成的透明电极的台阶覆盖稳定。

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