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1. 发明申请

US20040222445A1 Modified contact for programmable devices 失效
标题翻译：修改了可编程器件的触点
公开(公告)号：US20040222445A1
公开(公告)日：2004-11-11
申请号：US10864232
申请日：2004-06-09
发明人： Stephen J. Hudgens , Tyler A. Lowrey
IPC分类号： H01L027/148 , H01L029/768
CPC分类号： H01L23/5252 , H01L23/5256 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/16 , H01L45/1683 , H01L2924/0002 , H01L2924/00
摘要： In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact formed on a substrate. The resistivity of the contact is modified by at least one of implanting ions into the contact, depositing a material on the contact, and treating the contact with plasma. In an aspect, a spacer is formed within the opening and programmable material is formed within the opening and on the modified contact. A conductor is formed on the programmable material and the contact transmits to a signal line.
摘要翻译：在一方面，提供一种设置和重新编程可编程设备的状态的设备。在一方面，提供一种方法，使得通过暴露形成在基底上的接触的电介质形成开口。接触的电阻率通过将离子注入到接触中的至少一种来修饰，在接触上沉积材料，以及处理与等离子体的接触。在一个方面，在开口内形成间隔件，并且在开口内和修改的接触件上形成可编程材料。导体形成在可编程材料上，触点传输到信号线。

2. 发明申请

US20040195598A1 Light-based system for detecting analytes 有权
标题翻译：用于检测分析物的基于光的系统
公开(公告)号：US20040195598A1
公开(公告)日：2004-10-07
申请号：US10746292
申请日：2003-12-29
发明人： Steven Alfred Tysoe , Mark Philip D'evelyn , Frank John Mondello
IPC分类号： H01L027/148
CPC分类号： H01S5/0425 , B82Y20/00 , H01L33/32 , H01S5/005 , H01S5/34333
摘要： Device, kit and method of using same to detect analytes such as nucleic acids are described. An excitation source, preferably a nitride-based LED, emits light capable of being absorbed by luminophores. Sensors are stably attached, preferably via covalent or ionic bonds, to a surface within the device, such as the surface of the excitation source that is exposed to the sample. When a complex is formed between the sensors and the analyte, the luminophores emit light or emit light of a different wavelength, thereby signaling the presence or quantity of the analyte.
摘要翻译：描述了使用其来检测分析物如核酸的装置，试剂盒和方法。激发源，优选基于氮化物的LED发射能够被发光体吸收的光。传感器优选通过共价键或离子键稳定地连接到器件内的表面，例如暴露于样品的激发源的表面。当在传感器和分析物之间形成复合体时，发光体发光或发出不同波长的光，从而发出分析物的存在或数量。

3. 发明申请

US20040183105A1 Charge transfer element having high output sensitivity 失效
标题翻译：具有高输出灵敏度的电荷转移元件
公开(公告)号：US20040183105A1
公开(公告)日：2004-09-23
申请号：US10773112
申请日：2004-02-05
申请人： SANYO ELECTRIC CO., LTD.
发明人： Yoshihiro Okada
IPC分类号： H01L027/148
CPC分类号： H01L29/76816 , H01L27/1485
摘要： A charge transfer element comprising a reverse conductive type well formed on the surface of one conductive type semiconductor substrate, the one conductive type channel region extending in one direction relative to the well, a transfer electrode formed intersecting the channel region, a floating diffusion region formed continuous from the channel region, and an output transistor having a gate connected to the floating diffusion region. In a region where the output transistor is formed, the dopant density profile in the depth direction of the semiconductor substrate exhibits the maximum value relative to a middle region.
摘要翻译：一种电荷转移元件，包括在一个导电型半导体衬底的表面上形成的反向导电型阱，相对于阱在一个方向上延伸的一个导电型沟道区，与该沟道区交叉形成的转移电极，形成的浮动扩散区和从沟道区连续的输出晶体管，以及连接到浮置扩散区的栅极。在形成输出晶体管的区域中，半导体衬底的深度方向上的掺杂剂浓度分布相对于中间区域呈现最大值。

4. 发明申请

US20040178233A1 Gating system for a transport vehicle 有权
标题翻译：运输车辆的门控系统
公开(公告)号：US20040178233A1
公开(公告)日：2004-09-16
申请号：US10795362
申请日：2004-03-09
发明人： John J. Medemblik
IPC分类号： H01L027/148
CPC分类号： B60P1/36 , B60P1/56
摘要： A gate assembly for a hopper of a transport vehicle has an open position in which the gate lies substantially in a vertical plane adjacent to the hopper wall and a closed position in which the gate lies substantially in a horizontal plane. The gate moves longitudinally in guides between the two planes. Several gates can be located adjacent to one another to retain or discharge particulate material in several hoppers separated by partition walls.
摘要翻译：用于运输车辆的料斗的门组件具有打开位置，其中门基本上位于邻近料斗壁的垂直平面中，并且门处于关闭位置，在该关闭位置门基本上位于水平面中。门在两个平面之间的导轨中纵向移动。几个门可以彼此相邻地定位，以将颗粒材料保持或排出在由分隔壁分隔的多个料斗中。

5. 发明申请

US20040173824A1 Solid-state imaging device, method for manufacturing the same and interline transfer CCD image sensor 有权
标题翻译：固态成像装置及其制造方法和行间传输CCD图像传感器
公开(公告)号：US20040173824A1
公开(公告)日：2004-09-09
申请号：US10742419
申请日：2003-12-19
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD.
发明人： Hiroki Nagasaki , Syouji Tanaka , Yoshiyuki Matsunaga
IPC分类号： H01L027/148
CPC分类号： H01L27/14609 , H01L21/76237 , H01L27/1463 , H01L27/14643 , H01L27/14806 , H01L27/14843
摘要： A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stores the signal charge; a MOS transistor that is provided for reading out the signal charge stored in the photodiode; an element isolation portion that is formed of a STI that is a grooved portion of the semiconductor substrate so that the photodiode and the MOS transistor are isolated from each other; and a deep-portion isolation implantation layer that is formed under the element isolation portion for preventing a flow of a charge from the photodiode to the MOS transistor.
摘要翻译：提供了一种高性能固态成像装置。固态成像装置包括：多个像素单元; 和驱动单元。多个像素单元中的每一个包括：将入射光转换为信号电荷并存储信号电荷的光电二极管; 提供用于读出存储在光电二极管中的信号电荷的MOS晶体管; 元件隔离部分，其由作为半导体衬底的沟槽部分的STI形成，使得光电二极管和MOS晶体管彼此隔离; 以及形成在元件隔离部分下方的用于防止电荷从光电二极管流到MOS晶体管的深部分隔离注入层。

6. 发明申请

US20040169207A1 Integrated circuit devices having contact holes exposing gate electrodes in active regions and methods of fabricating the same 有权
标题翻译：具有暴露有源区域中的栅电极的接触孔的集成电路器件及其制造方法
公开(公告)号：US20040169207A1
公开(公告)日：2004-09-02
申请号：US10769649
申请日：2004-01-30
发明人： Jeung-Hwan Park , Myoung-Kwan Cho
IPC分类号： H01L027/148
CPC分类号： H01L21/823437 , H01L21/823475 , H01L21/823481
摘要： Integrated circuit devices are provided including an integrated circuit substrate and first, second and third spaced apart insulating regions in the integrated circuit substrate that define first and second active regions. A first gate electrode is provided on the first active region. The first gate electrode has a first portion on the first active region that extends onto the first insulating region and a second portion at an end of the first portion on the first insulating region. A second gate electrode is provided on the second active region. An insulating layer is provided on the first, second and third active regions defining a first gate contact hole that exposes at least a portion of the second portion of the first gate electrode. The first gate electrode is free of a gate contact hole on the first portion of the first gate electrode. A second gate contact hole is provided on the second active region that exposes at least a portion of the second gate electrode. Related methods of fabricating integrated circuit devices are also provided.
摘要翻译：提供集成电路器件，其包括集成电路衬底以及集成电路衬底中的第一，第二和第三间隔绝缘区域，其限定第一和第二有源区域。第一栅电极设置在第一有源区上。第一栅电极在第一有源区上具有延伸到第一绝缘区上的第一部分和位于第一绝缘区上的第一部分末端的第二部分。第二栅电极设置在第二有源区上。绝缘层设置在第一，第二和第三有源区上，限定了暴露第一栅电极的第二部分的至少一部分的第一栅极接触孔。第一栅电极在第一栅电极的第一部分上没有栅极接触孔。在第二有源区上提供第二栅极接触孔，其暴露第二栅电极的至少一部分。还提供了制造集成电路器件的相关方法。

7. 发明申请

US20040140489A1 Field emission display with double gate structure and method of manufacturing therefor 失效
标题翻译：双栅结构的场发射显示及其制造方法
公开(公告)号：US20040140489A1
公开(公告)日：2004-07-22
申请号：US10755348
申请日：2004-01-13
申请人： Samsung SDI Co., Ltd.
发明人： Hang-woo Lee , Pil-soo Ahn , Andrei Zoulkarneev
IPC分类号： H01L027/148
CPC分类号： B82Y10/00 , H01J1/304 , H01J9/025 , H01J9/18 , H01J2201/30469
摘要： A field emission display with a double gate structure and a method of manufacturing therefor are provided. The field emission display includes a substrate, a cathode layer formed on the substrate, a gate insulating layer which is formed on the substrate and the cathode layer and has a cavity through which part of the cathode layer is exposed, a field emitter provided on the cathode layer exposed on the bottom of the cavity, a first gate layer which is formed in the gate insulating layer and in which a first gate hole having a diameter greater than that of the cavity is formed not to be exposed to an inner surface of the cavity, and a second gate layer which is formed on the gate insulating layer and in which a second gate hole is formed in a portion that corresponds to the cavity.
摘要翻译：提供具有双栅极结构的场发射显示器及其制造方法。场致发射显示器包括衬底，形成在衬底上的阴极层，形成在衬底上的栅绝缘层和阴极层，并且具有暴露阴极层的一部分的空腔，设置在阴极层上的场发射体阴极层暴露在空腔的底部，形成在栅极绝缘层中的第一栅极层，其中形成直径大于空腔的直径的第一栅极孔不暴露于空腔和第二栅极层，其形成在栅极绝缘层上，并且在与空腔对应的部分中形成有第二栅极孔。

8. 发明申请

US20040135176A1 Mosfet having recessed channel and method o fabricating the same 有权
标题翻译： Mosfet具有凹槽和方法o制造相同的
公开(公告)号：US20040135176A1
公开(公告)日：2004-07-15
申请号：US10699047
申请日：2003-10-30
发明人： Ji-young Kim
IPC分类号： H01L027/148
CPC分类号： H01L29/78 , H01L29/4925 , H01L29/4933 , H01L29/66621
摘要： A MOSFET having a recessed channel and a method of fabricating the same. The critical dimension (CD) of a recessed trench defining the recessed channel in a semiconductor substrate is greater than the CD of the gate electrode disposed on the semiconductor substrate. As a result, the misalignment margin for a photolithographic process used to form the gate electrodes can be increased, and both overlap capacitance and gate induced drain leakage (GIDL) can be reduced.
摘要翻译：具有凹陷通道的MOSFET及其制造方法。在半导体衬底中限定凹陷通道的凹槽的临界尺寸（CD）大于设置在半导体衬底上的栅电极的CD。结果，可以增加用于形成栅电极的光刻工艺的未对准余量，并且可以减小重叠电容和栅极感应漏极泄漏（GIDL）。

9. 发明申请

US20040113180A1 Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US20040113180A1
公开(公告)日：2004-06-17
申请号：US10669421
申请日：2003-09-25
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Tetsuya Yamaguchi , Ryohei Miyagawa , Yoshitaka Egawa
IPC分类号： H01L027/148
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14643 , H04N5/2251 , H04N5/335 , H04N5/365 , H04N5/3745 , H04N5/37457
摘要： A solid-state imaging device, comprises an image pickup unit having unit cells including opto-electrical converter elements, said unit cells being disposed in two-dimensional array, a selection line made of polysilicon for selectively determining the unit cells in the same row within the image pickup unit, a read-out line made of polysilicon for reading out electric charge accumulated in the opto-electrical converter elements of the unit cells in the same row within the image pickup unit, a signal line transmitting pixel signals produced from the unit cells in the same row within the image pickup unit, a reset line made of polysilicon for discharging the unit cells in the same row within the image pickup unit down to the desired voltage level, a driver circuit located on one side of the image pickup unit for supplying drive signals to the read-out line, the selection line, and the reset line, respectively, and a read-out auxiliary wiring disposed along at least the read-out line and electrically connected to the read-out line at a plurality of junctions, the read-out auxiliary wiring being of relatively lower electric resistivity than the read-out line.
摘要翻译：一种固态成像装置，包括具有单元单元的图像拾取单元，所述单元包括光电转换元件，所述单元单元设置为二维阵列，由多晶硅制成的选择线，用于选择性地确定在同一行内的单元单元图像拾取单元，由多晶硅制成的读出线，用于读出积累在图像拾取单元内的同一行中的单位单元的光电转换元件中的电荷;信号线，从单元产生的像素信号在图像拾取单元内的相同行中的单元，由多晶硅制成的复位线，用于将图像拾取单元内的同一行中的单位单元放电到期望的电压电平，位于图像拾取单元的一侧的驱动器电路用于分别向读出线，选择线和复位线提供驱动信号，以及沿着至少读出的线和el布置的读出辅助布线在多个接合处与读出线分别连接，读出的辅助布线的电阻率比读出的线要低。

10. 发明申请

US20040094781A1 Method for fabricating a vertical NROM cell 有权
公开(公告)号：US20040094781A1
公开(公告)日：2004-05-20
申请号：US10318551
申请日：2002-12-13
申请人： Nanya Technology Corporation
发明人： Ching-Nan Hsiao , Chi-Hui Lin , Chung-Lin Huang , Ying-Cheng Chuang
IPC分类号： H01L027/148
CPC分类号： H01L27/11568 , H01L27/115
摘要： A method for fabricating a vertical nitride read-only memory (NROM) cell. A substrate having at least one trench is provided. A spacer is formed over the sidewall of the trench. Subsequently, ion implantation is performed on the substrate using the spacer as a mask to form doping areas as bit lines in the substrate near its surface and the bottom of the trench. Bit line oxides are formed over each of the doping areas. After the spacer is removed, a conformable insulating layer as gate dielectric is deposited on the sidewall of the trench and the surface of the bit line oxide. Finally, a conductive layer as a word line is deposited over the insulating layer and fills in the trench.

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