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61. 发明公开

EP3193378A1 NITRIDE SEMICONDUCTOR DEVICE AND QUANTUM CASCADE LASER USING THE SAME 无效
标题翻译：氮化物半导体器件和量子级联激光器
公开(公告)号：EP3193378A1
公开(公告)日：2017-07-19
申请号：EP16199936.2
申请日：2016-11-22
申请人： Sharp Kabushiki Kaisha , The University of Tokyo
发明人： KOTANI, Teruhisa , ARAKAWA, Yasuhiko
IPC分类号： H01L33/16 , H01L33/32 , H01S5/323
CPC分类号： H01S5/3401 , H01L33/16 , H01L33/32 , H01S5/0421 , H01S5/305 , H01S5/3201 , H01S5/3202 , H01S5/3215 , H01S5/3218 , H01S5/3407 , H01S5/3422 , H01S5/34333 , H01S2301/173 , H01S2302/02
摘要： A nitride semiconductor device includes a GaN substrate (11) in which an angle between a principal surface and an m-plane of GaN is -5° or more and +5° or less, a first intermediate layer (101) disposed on the principal surface of the substrate (11) and made of Al z Ga (1-z) N (0 ≤ z ≤ 1), and a second intermediate layer (102) disposed on a principal surface of the first intermediate layer (101), having an Al content different from that of the first intermediate layer (101), and made of Al x1 In y1 Ga (1-x1-y1) (0 ≤ x1 ≤ 1, 0 ≤ y1 ≤ 1). A quantum cascade laser (10) includes the nitride semiconductor device.
摘要翻译：本发明提供一种氮化物半导体装置，其特征在于，具备GaN基板（11），该GaN基板（11）的GaN的主面与m面的角度为-5°以上且+ 5°以下，第一中间层（101）（1）的表面由AlzGa（1-z）N（0≤z≤1）制成，第二中间层（102）设置在第一中间层（101）的主表面上，具有Al 含量不同于第一中间层（101）的含量，并由Al x1 In y1 Ga（1-x1-y1）（0≤x1≤1,0≤y1≤1）制成。量子级联激光器（10）包括氮化物半导体器件。

62. 发明公开

EP1842242A2 TERAHERTZ RADIATING DEVICE BASED ON SEMICONDUCTOR COUPLED QUANTUM WELLS 审中-公开
标题翻译：太赫兹辐射加速器的基于半导体耦合量子MULDEN
公开(公告)号：EP1842242A2
公开(公告)日：2007-10-10
申请号：EP05703116.3
申请日：2005-01-20
申请人： YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM
发明人： LAIKHTMAN, Boris , SHVARTSMAN, Leonid
IPC分类号： H01L33/00 , H01S5/34
CPC分类号： H01S1/02 , B82Y20/00 , H01L33/06 , H01S5/34 , H01S5/3419 , H01S5/3422 , H01S2302/02
摘要： A semiconductor device and method of its fabrication are provided to enable the device operation in a THz spectral range. The device comprises a heterostructure including at least first (12) and second (13) semiconductor layers. The first and second layers are made of materials providing a quantum mechanical coupling between an electron quantum well (EQW) in the first layer and a hole quantum well (HQW) in the second layer, and providing an overlap between the valence band of the material of the second layer and the conduction band of the material of the first layer. A layout of the layers is selected so as to provide a predetermined dispersion of energy subbands in the conduction band of the first layer and the valence band of the second layer. An application of an external bias field across the first and second layers causes THz radiation originating from radiative transitions of non-equilibrium carriers between at least one of the following: neighboring energy subbands of the EQW, neighboring energy subbands of the HQW, and ground energy subbands of the EQW and HQW.

63. 发明授权

EP1145395B1 COMPOUND SEMICONDUCTOR STRUCTURES FOR OPTOELECTRONIC DEVICES 有权
标题翻译：化合物半导体结构用于光电电子元件
公开(公告)号：EP1145395B1
公开(公告)日：2004-10-13
申请号：EP99967181.1
申请日：1999-12-03
申请人： ARIZONA BOARD OF REGENTS
发明人： ZHANG, Yong-Hang , DOWD, Philip , BRAUN, Wolfgang
IPC分类号： H01S5/32 , H01S5/34 , H01L33/00 , H01S5/183 , H01L31/00
CPC分类号： B82Y20/00 , H01S5/0211 , H01S5/12 , H01S5/125 , H01S5/18308 , H01S5/18311 , H01S5/18313 , H01S5/2063 , H01S5/3211 , H01S5/32358 , H01S5/3403 , H01S5/3422 , H01S5/3425 , H01S5/34306 , H01S5/34313 , H01S5/3434 , H01S2302/00 , Y10S257/918

64. 发明授权

EP0690516B1 Semiconductor light emitting device 失效
公开(公告)号：EP0690516B1
公开(公告)日：1998-11-18
申请号：EP95110281.3
申请日：1995-06-30
申请人： SHARP KABUSHIKI KAISHA
发明人： Nakatsu, Hiroshi , Nakamura, Jun-ichi
IPC分类号： H01L33/00 , H01S3/19
CPC分类号： H01L33/06 , B82Y20/00 , H01S5/34 , H01S5/3422 , H01S5/3425 , H01S5/34326 , H01S5/34333 , H01S5/347

65. 发明公开

EP0690516A1 Semiconductor light emitting device 失效
标题翻译： Licht-emittierende Halbleitervorrichtung
公开(公告)号：EP0690516A1
公开(公告)日：1996-01-03
申请号：EP95110281.3
申请日：1995-06-30
申请人： SHARP KABUSHIKI KAISHA
发明人： Nakatsu, Hiroshi , Nakamura, Jun-ichi
IPC分类号： H01L33/00 , H01S3/19
CPC分类号： H01L33/06 , B82Y20/00 , H01S5/34 , H01S5/3422 , H01S5/3425 , H01S5/34326 , H01S5/34333 , H01S5/347
摘要： On a first cladding layer formed of n-type Al 0.7 Ga 0.3 P, an active region having a staggered-type (type II) heterojunction superlattice structure is disposed. The active region includes 50 light emitting layers formed of Al 0.1 Ga 0.9 P doped with nitrogen and 50 barrier layers formed of Al 0.7 Ga 0.3 P. The 50 light emitting layers and the 50 barrier layers formed of such materials are stacked alternately to form 50 pairs. On the active region, a second cladding layer formed of Al 0.1 Ga 0.9 P is disposed. In the formation of the active layer, the composition of the light emitting layer and the barrier layer and the thickness of the barrier layer are controlled so that the isoelectronic level in the light emitting layer and the quantum level in the barrier layer will fulfill the resonance conditions. The carriers injected into the conduction band are confined in the quantum level in the barrier layer and transfer to the isoelectronic level in the light emitting layer by the resonance tunneling effect.
摘要翻译：在由n型Al 0.7 Ga 0.3 P形成的第一覆层上，设置具有交错型（II型）异质结超晶格结构的有源区。有源区包括由掺杂有氮的Al 0.1 Ga 0.9 P形成的50个发光层和由Al0.7Ga0.3P形成的50个势垒层。由这种材料形成的50个发光层和50个阻挡层交替堆叠形成50对。在有源区上设置由Al 0.1 Ga 0.9 P形成的第二覆层。在有源层的形成中，控制发光层和阻挡层的组成以及阻挡层的厚度，使得发光层中的等电子水平和阻挡层中的量子水平将实现谐振条件。注入导带的载流子被限制在阻挡层中的量子水平中，并通过共振隧穿效应转移到发光层中的等电子层。

66. 发明授权

EP0433542B1 Optoelectronic devices 失效
标题翻译：光电器件。
公开(公告)号：EP0433542B1
公开(公告)日：1995-07-05
申请号：EP90114315.6
申请日：1990-07-26
申请人： International Business Machines Corporation
发明人： Esaki, Leo , Ohno, Hideo , Mendez, Emilio Eugenio
IPC分类号： H01L33/00 , H01L31/0352 , H01S3/19
CPC分类号： H01L33/06 , B82Y20/00 , H01L31/0352 , H01S5/06203 , H01S5/06206 , H01S5/34 , H01S5/3402 , H01S5/3418 , H01S5/3419 , H01S5/3422 , H01S5/34306

67. 发明公开

EP0637862A2 Semiconductor laser device and method of fabricating the laser device 失效
标题翻译：半导体激光装置及其制造方法。
公开(公告)号：EP0637862A2
公开(公告)日：1995-02-08
申请号：EP94111892.9
申请日：1994-07-29
申请人： HITACHI, LTD.
发明人： Goto, Jun , Migita, Masahito , Taike, Akira, No. 7, Hitachi , Momose, Masayuki , Nakatsuka, Shin'ichi
IPC分类号： H01S3/19 , H01L33/00 , H01L21/20 , H01L21/36
CPC分类号： H01L33/40 , B82Y20/00 , H01L21/02395 , H01L21/02463 , H01L21/02474 , H01L21/02477 , H01L21/02507 , H01L21/02557 , H01L21/0256 , H01L21/02576 , H01L21/02579 , H01L33/0087 , H01L33/28 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/0421 , H01S5/20 , H01S5/2004 , H01S5/2009 , H01S5/2211 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3201 , H01S5/3211 , H01S5/3213 , H01S5/3215 , H01S5/3216 , H01S5/3218 , H01S5/327 , H01S5/3406 , H01S5/3409 , H01S5/3422 , H01S5/347
摘要： In a buried type semiconductor laser device composed of a II-VI compound semiconductor, a buried layer 9 - 11 is made of a II-VI compound semiconductor having a refraction factor lower than that of an active layer of the laser device. The buried layer has a forbidden band width larger than that of an active layer of the laser device. The buried layer has such a composition that the lattice constant thereof is substantially matched to that of a substrate on which the laser device is grown. The buried layer has an electric resistance high enough not to exert an effect on the operation of the laser composed of an n-type clad-active layer-a p-type clad.

68. 发明公开

EP0610893A2 Laser diode 失效
标题翻译： Diodenlaser。
公开(公告)号：EP0610893A2
公开(公告)日：1994-08-17
申请号：EP94101908.5
申请日：1994-02-08
申请人： NEC CORPORATION
发明人： Iwata, Hiroshi
IPC分类号： H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2009 , H01S5/2013 , H01S5/3068 , H01S5/3213 , H01S5/322 , H01S5/327 , H01S5/3403 , H01S5/3422 , H01S5/347
摘要： A laser diode suitable for blue-green light emission utilizing type II heterojuctions of II-VI compound semiconductors. The laser diode comprises a layer 24 for confining electrons, a layer 26 for confining holes, and a quantum well layer which is formed bewteen the electron confinement layer 24 and the hole confinement layer 26 and allows the confined electrons and holes to recombine therein. The laser also comprises an electron barrier layer 23 and a hole barrier layer 27 for preventing diffusion of the electrons and holes beyond the barriers. The light emitted by the recombination is confined between the n -cladding layer 22 and a p-cladding layer 28.
摘要翻译：适用于采用II-VI族化合物半导体II型杂质的蓝绿光发射的激光二极管。激光二极管包括用于限制电子的层24，用于限制空穴的层26和形成在电子限制层24和空穴限制层26之间的量子阱层，并且允许限制的电子和空穴在其中复合。该激光器还包括电子阻挡层23和用于防止电子和空穴扩散超过阻挡层的空穴阻挡层27。通过复合发射的光被限制在n包层22和p包层28之间。

69. 发明公开

EP0433542A3 Optoelectronic devices 失效
标题翻译：光电器件
公开(公告)号：EP0433542A3
公开(公告)日：1991-12-27
申请号：EP90114315.6
申请日：1990-07-26
申请人： International Business Machines Corporation
发明人： Esaki, Leo , Ohno, Hideo , Mendez, Emilio Eugenio
IPC分类号： H01L33/00 , H01L31/0352 , H01S3/19
CPC分类号： H01L33/06 , B82Y20/00 , H01L31/0352 , H01S5/06203 , H01S5/06206 , H01S5/34 , H01S5/3402 , H01S5/3418 , H01S5/3419 , H01S5/3422 , H01S5/34306
摘要： The present invention is directed to novel optoelectronic devices, such as light emitters and detectors, that have a unique combination of semiconductor materials that provides a band arrangement resulting in improved efficiency of carrier injection. The devices are quantum well type devices in which discrete electronic states are formed by size quantization effects in the quantum well region. Electromagnetic radiation of emission and absorption occurs by the transition of electrons from a first energy state to a second energy state in either the conduction band or the valence band of the quantum well layer (12). The bands edges of the layers are offset such that under an appropriate bias, the discrete energy states reside in the bandgap of one of the electrodes (14) and in an allowed region of the other electrode (16), with one state residing in the conduction band of one electrode and the other state residing in the valence band of the other electrode. The wavelength of the emitted or detected light is inversely proportional to the energy difference between the first and second states. Wavelength customization is facilitated by techniques for adjusting the energy difference.

70. 发明授权

EP2340589B1 HIGH-TEMPERATURE INTERBAND CASCADE LASERS 有权转让
标题翻译：高温互联级联激光器
公开(公告)号：EP2340589B1
公开(公告)日：2018-03-14
申请号：EP09822404.1
申请日：2009-10-07
申请人： The Government of the United States of America as represented by the Secretary of the Navy
发明人： VURGAFTMAN, Igor , MEYER, Jerry, R. , KIM, Mijin , BEWLEY, William, W. , KIM, Chul-Soo , LINDLE, James, R. , CANEDY, Chadwick, L.
IPC分类号： H01S5/34
CPC分类号： B82Y20/00 , H01S5/3077 , H01S5/3401 , H01S5/3407 , H01S5/3416 , H01S5/3422 , H01S5/34306
摘要： A type II interband cascade gain medium including a thick and indium-rich GaInSb hole well, two or more GaSb hole wells, electron and hole injectors are separated by a thick AISb barrier, the thickness of the firs InAs electron well in the electron injector, as well as the total thickness of the electron injector and the number of cascaded stages is reduced, transition regions are inserted at the interfaces between the various regions of the gain medium, thick separate confinement layers comprising Ga(InAIAs)Sb are disposed between the active gain region and the cladding, and the doping profile of the cladding layers is optimized to minimize the overlap of the optical mode with the most heavily-doped portion of the InAs/AISb SL cladding layers.

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