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    • 61. 发明申请
    • Hydraulic Control Apparatus
    • 液压控制装置
    • US20090242050A1
    • 2009-10-01
    • US12086042
    • 2007-03-26
    • Takeharu MatsuzakiShigeto NakajimaTakeshi Kobayashi
    • Takeharu MatsuzakiShigeto NakajimaTakeshi Kobayashi
    • F15B13/04
    • F15B11/0413B66F9/22E02F9/2203E02F9/2225E02F9/2267F15B11/044F15B11/05F15B13/0402F15B2211/30545F15B2211/353F15B2211/40561F15B2211/47F15B2211/473F15B2211/7052Y10T137/87169
    • A hydraulic control apparatus 1 includes a switch valve 11, a valve support chamber 35, a flow control valve 12 movable within the valve support chamber 35, an on-off valve 13 movable within the communication path chamber 12a, and a valve control device 14. The flow control valve 12 has a communication path chamber 12a and a back pressure chamber 12d. The on-off valve 13 is capable of opening and shutting off a communication path X between a cylinder line 32 and a switch valve line 33. A restrictor is formed between the flow control valve 12 and a wall defining the valve support chamber 35. The restrictor connects the cylinder line 32 and the communication path chamber 12a to each other. The opening degree of the restrictor is changed in correspondence with movement of the flow control valve 12. When the switch valve 11 is located at the neutral position or the supply position, the valve control device 14 applies a fluid pressure in the cylinder line 32 to the back pressure chamber 12d for urging the on-off valve 13 in a direction for shutting off the communication path 12a. When the switch valve 11 is located at the drainage position, the valve control device 14 applies a pilot pressure lower than the fluid pressure in the cylinder line 32 to the back pressure chamber 12d, thereby moving the on-off valve 13 in a direction for opening the communication path X.
    • 液压控制装置1包括开关阀11,阀支撑室35,可在阀支撑室35内移动的流量控制阀12,可在连通路径室12a内移动的开关阀13以及阀控制装置14 流量控制阀12具有连通路径室12a和背压室12d。 开关阀13能够打开和关闭气缸管线32和切换阀线路33之间的连通路径X.在流量控制阀12和限定阀支撑室35的壁之间形成限流器。 限流器将气缸管线32和连通路径室12a彼此连接。 限制器的开度根据流量控制阀12的移动而改变。当开关阀11位于中立位置或供给位置时,阀控制装置14将气缸管线32中的流体压力施加到 用于在断开连通路径12a的方向上推压开关阀13的背压室12d。 当切换阀11位于排水位置时,阀控制装置14将低于气缸管线32中的流体压力的先导压力施加到背压室12d,从而沿开关阀13向 打开通信路径X.
    • 65. 发明申请
    • Information recording apparatus
    • 信息记录装置
    • US20070248312A1
    • 2007-10-25
    • US11730638
    • 2007-04-03
    • Takeshi Kobayashi
    • Takeshi Kobayashi
    • H04N5/93
    • H04N5/765G11B27/032G11B27/36G11B2220/90H04N5/77H04N5/772H04N5/781H04N5/85H04N9/8042
    • An information recording apparatus has several function units that perform: storing a time when dubbing is started, halting the dubbing temporarily when that the connecting cable is disconnected, and storing a dubbing time and the picture and audio data for a predetermined time period when the dubbing process is halted temporarily as temporary halt picture and audio information; and when the cable is reconnected, calculating a disconnection time of the cable, rewinding magnetic tape to a predetermined time period ahead of a presumed temporary halt position based on the disconnection time, reproducing the magnetic tape, determining whether a data pattern of the reproduced picture and audio data matches a data pattern of the temporary halt picture and audio information; and if they match, restarting the dubbing process from a position on the magnetic tape corresponding to final recording of the temporary halt picture and audio information.
    • 信息记录装置具有多个功能单元,其执行:存储复制开始的时间,当连接电缆断开时临时停止复制,并且在配音时存储转录时间和图像和音频数据达预定时间段 暂时停止进程临时停止图片和音频信息; 并且当电缆被重新连接时,计算电缆的断开时间,基于断开时间将磁带重绕到基于断开时间的推测临时停止位置之前的预定时间段,再现磁带,确定再现图像的数据模式 并且音频数据与临时停止画面和音频信息的数据模式相匹配; 并且如果它们相匹配,则对应于临时停止图像和音频信息的最终记录的磁带上的位置重新启动复制处理。
    • 66. 发明授权
    • Method for manufacturing SOI wafer
    • 制造SOI晶圆的方法
    • US07276427B2
    • 2007-10-02
    • US10537092
    • 2003-12-01
    • Masashi IchikawaTakeshi KobayashiMiho Iwabuchi
    • Masashi IchikawaTakeshi KobayashiMiho Iwabuchi
    • H01L21/30
    • H01L21/76254H01L21/02043
    • The present invention provides a manufacturing method for an SOI wafer with a high productivity in which generation of a void is suppressed in manufacturing the SOI wafer. In a manufacturing method for an SOI wafer of the present invention in which two starting wafers are prepared, an insulating layer is formed on at least one of the two starting wafers and the one wafer is adhered to the other wafer without using an adhesive agent, the starting wafers each with no line defect on a surface thereof are used. In a manufacturing method for an SOI wafer of the present invention in which two starting wafers are prepared, an insulating layer is formed on at least one of the two starting wafers and the one wafer is adhered to the other wafer without using an adhesive agent, the starting wafers are subjected to a high temperature heat treatment in advance.
    • 本发明提供一种SOI晶片的制造方法,该SOI晶片在制造SOI晶片时能够抑制空穴的产生。 在本发明的SOI晶片的制造方法中,准备两个起始晶片,在两个起始晶片中的至少一个上形成绝缘层,并且一个晶片不使用粘合剂粘附到另一个晶片上, 使用其表面上没有线缺陷的起始晶片。 在本发明的SOI晶片的制造方法中,准备两个起始晶片,在两个起始晶片中的至少一个上形成绝缘层,并且一个晶片不使用粘合剂粘附到另一个晶片上, 预先对起始晶片进行高温热处理。
    • 70. 发明申请
    • Decorating material
    • 装饰材料
    • US20060204729A1
    • 2006-09-14
    • US11337069
    • 2006-01-23
    • Takeshi Kobayashi
    • Takeshi Kobayashi
    • B41M5/00
    • B41M7/0081B41M7/0045Y10T428/24802
    • There is provided a decorative material which hardly undergoes deterioration of a substrate even when irradiated with an electron beam, and is excellent in surface properties such as stain resistance, abrasion resistance and marring resistance. The decorative material of the present invention comprises a substrate, and a pattern layer and/or a colored layer, and a surface protective layer which are successively laminated on the substrate, wherein the surface protective layer is obtained by crosslinking and curing an electron beam-curable resin composition, and a rate of reduction in a folding endurance of a material obtained by applying the electron beam-curable resin composition onto the substrate and then irradiating an electron beam to the electron beam-curable resin composition, relative to a folding endurance of the substrate before applying the electron beam-curable resin composition thereonto is 70% or lower as measured in the CD direction (lateral direction) of the substrate.
    • 提供了即使用电子束照射也难以使基板发生劣化的装饰性材料,并且表面性能如耐污染性,耐磨性和耐腐蚀性优异。 本发明的装饰材料包括依次层压在基板上的基板,图案层和/或着色层和表面保护层,其中表面保护层是通过交联和固化电子束 - 固化性树脂组合物和通过将电子束固化性树脂组合物施加到基板上而将电子束照射到电子束固化性树脂组合物而获得的材料的折叠耐久性的降低率相对于电子束固化性树脂组合物的耐折性 在其上施加电子束固化树脂组合物之前的基板在基板的CD方向(横向)上测量时为70%以下。