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61. 发明授权

US4350668A Recovery of cobalt component from 3-pentenoic ester synthesis 失效
标题翻译：从3-戊烯酯合成中回收钴组分
公开(公告)号：US4350668A
公开(公告)日：1982-09-21
申请号：US246065
申请日：1981-03-20
申请人： Nobuo Isogai , Takashi Okawa , Motoyuki Hosokawa , Toshiyasu Watanabe , Natsuko Wakui
发明人： Nobuo Isogai , Takashi Okawa , Motoyuki Hosokawa , Toshiyasu Watanabe , Natsuko Wakui
IPC分类号： C01G51/00 , B01J31/40 , C07C29/86 , C07C67/38
CPC分类号： B01J31/20 , B01J31/403 , B01J2231/321 , B01J2531/0208 , B01J2531/845 , B01J31/0235
摘要： In a process for producing a 3-pentenoic ester which comprises reacting butadiene, carbon monoxide and an alcohol in the presence of a solvent and a catalyst selected from cobalt carbonyl or cobalt carbonyl complex, the improvement which comprises distilling the reaction mixture to remove organic volatile components comprised of the 3-pentenoic ester and the unreacted raw materials and the solvent and contacting the distillation residue with an organic solvent to dissolve and/or disperse the residue in the solvent and contacting the resulting organic solution with an aqueous acid solution to extract any cobalt component from the organic solution with the aqueous acid solution, and separating the aqueous acid solution containing the cobalt component from the organic solution, and neutralizing the aqueous acid solution with an alkaline solution to precipitate a cobalt component is disclosed.
摘要翻译：在制备3-戊烯酸酯的方法中，其包括在溶剂和选自羰基钴或羰基钴络合物的催化剂存在下使丁二烯，一氧化碳和醇反应，其改进在于蒸馏反应混合物以除去有机挥发物由3-戊烯酸酯和未反应的原料组成的组分和溶剂，并使蒸馏残余物与有机溶剂接触以使残余物溶解和/或分散在溶剂中，并使所得有机溶液与酸水溶液接触以提取任何从有机溶液中加入含有酸溶液的钴组分，并将含有钴组分的酸水溶液与有机溶液分离，并用碱溶液中和酸水溶液沉淀出钴组分。

62. 发明授权

US4327225A Process for producing 2-pentenoic ester 失效
标题翻译： 2-戊烯酸酯的制备方法
公开(公告)号：US4327225A
公开(公告)日：1982-04-27
申请号：US195524
申请日：1980-10-09
申请人： Nobuo Isogai , Motoyuki Hosokawa , Takashi Okawa , Natsuko Wakui
发明人： Nobuo Isogai , Motoyuki Hosokawa , Takashi Okawa , Natsuko Wakui
IPC分类号： B01J31/00 , C07B61/00 , C07C67/333 , C07C69/533
CPC分类号： C07C67/333
摘要： A process for producing a 2-pentenoic ester which comprises isomerizing the corresponding 3-pentenoic ester in the presence of a dicyclized amidine is disclosed.
摘要翻译：公开了一种生产2-戊烯酸酯的方法，该方法包括在二环化脒存在下异构化相应的3-戊烯酸酯。

63. 发明授权

US08871643B2 Lateral semiconductor device and manufacturing method for the same 有权
标题翻译：侧面半导体器件及其制造方法相同
公开(公告)号：US08871643B2
公开(公告)日：2014-10-28
申请号：US13976266
申请日：2011-02-08
申请人： Hiroomi Eguchi , Takashi Okawa , Atsushi Onogi
发明人： Hiroomi Eguchi , Takashi Okawa , Atsushi Onogi
IPC分类号： H01L21/302 , H01L29/66 , H01L29/423 , H01L29/739 , H01L21/306
CPC分类号： H01L29/6625 , H01L21/30604 , H01L29/4236 , H01L29/66325 , H01L29/7394
摘要： A manufacturing method for manufacturing a lateral semiconductor device having an SOI (Silicon on Insulator) substrate, the lateral semiconductor device comprising a semiconductor layer that includes a buried oxide layer and a drift region, the manufacturing method comprising an etching process of etching, by a predetermined depth, a LOCOS oxide that projects from a surface of the semiconductor layer by a predetermined thickness and is embedded in the semiconductor layer by a predetermined thickness, and a trench forming process of simultaneously forming a first trench extending from the drift region toward the buried oxide layer, and a second trench extending from a portion obtained by the etching in the etching process toward the buried oxide layer, at a same etching rate, and stopping forming the first trench and the second trench at a time when the second trench reaches the buried oxide layer.
摘要翻译：一种用于制造具有SOI（绝缘体上硅）衬底的横向半导体器件的制造方法，所述横向半导体器件包括包括掩埋氧化物层和漂移区的半导体层，所述制造方法包括通过蚀刻的蚀刻工艺，预定深度，从半导体层的表面突出预定厚度并以预定厚度嵌入到半导体层中的LOCOS氧化物，以及沟槽形成工艺，其同时形成从漂移区延伸到掩埋的第一沟槽氧化物层，以及从蚀刻处理中通过蚀刻获得的部分以相同的蚀刻速率向掩埋氧化物层延伸的第二沟槽，并且在第二沟槽到达第二沟槽时停止形成第一沟槽和第二沟槽掩埋氧化层。

64. 发明授权

US08475958B2 Nickel hydrogen storage battery and method for manufacturing negative electrode thereof 有权
标题翻译：镍氢蓄电池及其负极的制造方法
公开(公告)号：US08475958B2
公开(公告)日：2013-07-02
申请号：US11794867
申请日：2005-12-28
申请人： Takashi Okawa , Tsuneyoshi Murakami , Kenichi Aoki , Hiroyuki Usui , Kimihiro Imamura
发明人： Takashi Okawa , Tsuneyoshi Murakami , Kenichi Aoki , Hiroyuki Usui , Kimihiro Imamura
IPC分类号： H01M6/10
CPC分类号： H01M10/345 , H01M4/0435 , H01M4/242 , H01M4/30 , H01M10/0431 , Y02E60/124 , Y02P70/54
摘要： A nickel hydrogen storage battery is provided which includes an electrode assembly formed by winding spirally a strip-like negative electrode (4) and a strip-like positive electrode with a separator interposed therebetween, the strip-like negative electrode (4) having a mixture layer containing a hydrogen storage alloy disposed on a core material. The electrode assembly is contained in a bottomed cylindrical container such that the negative electrode (4) forms the outermost peripheral portion. A portion corresponding to an outermost peripheral portion (5) of the negative electrode is a thin portion, and the thin portion is bent in advance in the winding direction of the electrode assembly to form an arc shape. In this manner, when the spirally wound electrode assembly is configured, the outermost peripheral portion of the negative electrode is prevented from peeling from the electrode assembly, and thus the insertability into the bottomed cylindrical container is improved.
摘要翻译：提供了一种镍氢蓄电池，其包括通过螺旋地卷绕带状负极（4）和带状正电极而形成的电极组件，隔膜插入其间的带状负电极（4），具有混合物该层包含设置在芯材上的储氢合金。电极组件包含在有底的圆筒形容器中，使得负极（4）形成最外周部分。对应于负极的最外周部分（5）的部分是薄的部分，并且薄部分预先在电极组件的卷绕方向上弯曲以形成弧形。以这种方式，当构造螺旋卷绕的电极组件时，防止负电极的最外周部分从电极组件剥离，从而提高了有底圆筒形容器的插入性。

65. 发明申请

US20110014508A1 Nickel Metal Hydride Rechargeable Battery And Method For Manufacturing Negative Electrode Thereof 有权
标题翻译：镍氢充电电池及其负极制造方法
公开(公告)号：US20110014508A1
公开(公告)日：2011-01-20
申请号：US11791521
申请日：2005-11-24
申请人： Takashi Okawa , Tsuneyoshi Murakami , Kenichi Aoki , Hiroyuki Usui
发明人： Takashi Okawa , Tsuneyoshi Murakami , Kenichi Aoki , Hiroyuki Usui
IPC分类号： H01M4/48 , H01R43/16
CPC分类号： H01M10/345 , H01M2/022 , H01M4/242 , H01M4/26 , H01M6/10 , H01M10/28 , H01M10/4235 , Y02E60/124 , Y02P70/54 , Y10T29/49108 , Y10T29/49204
摘要： A nickel metal hydride rechargeable battery has a closed-end tubular container containing a spiral-shaped electrode assembly formed by winding a negative electrode (1) and a positive electrode with a separator interposed therebetween such that the outermost periphery of the assembly is the negative electrode (1), the negative electrode (1) being formed by disposing on a conductive substrate a mixture layer containing a hydrogen-absorption alloy, the positive electrode employing nickel hydroxide as an active material. In the nickel metal hydride rechargeable battery, the surface roughness of the outermost peripheral portion of the mixture layer of the negative electrode (1) which contacts an inner side wall of the closed-end tubular container is 3.5 μm or more in terms of ten-point average roughness and is larger than the surface roughness of the other portion of the mixture layer. The reduction of oxygen gas during rapid charging is thereby facilitated without lowering the design capacity of the battery.
摘要翻译：镍氢可再充电电池具有封闭的管状容器，其包含螺旋形电极组件，该螺旋形电极组件通过将负极（1）和正极与隔膜插入其间的正极形成，使得组件的最外周是负极（1）中，通过在导电性基板上设置含有吸氢合金的混合层，使用氢氧化镍作为活性物质的正极而形成负极（1）。在镍氢可再充电电池中，负极（1）的与封闭端管状容器的内侧壁接触的混合层的最外周部的表面粗糙度为10重量％以上为3.5μm以上，点平均粗糙度并且大于混合物层的另一部分的表面粗糙度。因此，不会降低电池的设计容量，从而便于快速充电时的氧气的还原。

66. 发明申请

US20090170004A1 ELECTRODE FOR RECHARGEABLE BATTERY AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：用于可充电电池的电极及其制造方法
公开(公告)号：US20090170004A1
公开(公告)日：2009-07-02
申请号：US12300441
申请日：2007-04-25
申请人： Takashi Okawa , Takashi Ebihara , Yoshinori Ito
发明人： Takashi Okawa , Takashi Ebihara , Yoshinori Ito
IPC分类号： H01M4/70 , B05D5/12
CPC分类号： H01M4/0404 , H01M4/0416 , H01M4/0435 , H01M4/661 , H01M4/667 , H01M4/808
摘要： A rechargeable battery electrode of the present invention is produced by filling voids in a three-dimensional metal porous body (1) with an active material (2). A metal-rich layer (3) having a metal density greater than other portions is provided in a region except for thicknesswise surface layer portions of the three-dimensional metal porous body. The metal-rich layer is allowed to be responsible for current collecting characteristics, and the configuration thereof is optimized. In this manner, a rechargeable battery electrode excellent in both short circuit resistance and current collecting characteristics is achieved.
摘要翻译：通过用活性物质（2）将空隙填充到三维金属多孔体（1）中来制造本发明的可再充电电池电极。在三维金属多孔体的厚度方向的表面层以外的区域中设置金属浓度大于其他部分的金属富集层（3）。允许金属富集层负责集电特性，其结构优化。以这种方式，实现了短路电阻和集电特性优异的二次电池电极。

67. 发明申请

US20080007727A1 Surface inspection method and surface inspection apparatus 有权
标题翻译：表面检查方法和表面检查装置
公开(公告)号：US20080007727A1
公开(公告)日：2008-01-10
申请号：US11822469
申请日：2007-07-06
申请人： Takashi Okawa , Kenji Mitomo
发明人： Takashi Okawa , Kenji Mitomo
IPC分类号： G01N21/88
CPC分类号： G01N21/9503 , G01N21/94
摘要： When measuring an edge region, a photo detector with an angle not influenced by the diffracted light, the diffracted light causing noise, is selected to thereby allow for inspection that minimizes the sensitivity reduction. This allows for the management of foreign matters in the outer peripheral portion, which conventionally could not be measured, and this also eliminates the oversight of critical defects on the wafer, thus leading to reduction of failures of IC.
摘要翻译：当测量边缘区域时，选择具有不受衍射光影响的角度的衍射光引起噪声的光电检测器，从而允许最小化灵敏度降低的检查。这允许管理外围部分中的异常情况，其通常不能被测量，并且这也消除了对晶片的关键缺陷的疏忽，从而导致IC故障的减少。

68. 发明授权

US06541632B2 Process for producing heterocyclic nitriles 有权
标题翻译：制备杂环腈的方法
公开(公告)号：US06541632B2
公开(公告)日：2003-04-01
申请号：US10173619
申请日：2002-06-19
申请人： Hideaki Ogino , Takashi Okawa , Shuji Ebata , Yoshinori Kanamori
发明人： Hideaki Ogino , Takashi Okawa , Shuji Ebata , Yoshinori Kanamori
IPC分类号： C07D24124
CPC分类号： C07C253/28 , C07D213/85 , C07C255/51
摘要： A carbocyclic or heterocyclic compound, ammonia and an oxygen-containing gas are subjected to fluid catalytic reaction in vapor phase in the presence of a catalyst containing alkali metal to produce an aromatic or heterocyclic nitrile. The use of the catalyst containing a specific amount of alkali metal enables the stable production of the aromatic or heterocyclic nitrile in high yields with little change with time even when water is present in the reaction system. The use of the catalyst containing the alkali metal also enables the recycle and reuse of unreacted ammonia which is usually accompanied by water, thereby reducing production costs.
摘要翻译：在含有碱金属的催化剂存在下，将碳环或杂环化合物，氨和含氧气体在气相中进行流化催化反应以产生芳族或杂环腈。使用含有特定量的碱金属的催化剂能够以高产率稳定地生产芳族或杂环腈，即使在反应体系中存在水时也几乎不改变。使用含有碱金属的催化剂也能够再循环和再利用通常伴有水的未反应的氨，从而降低生产成本。

69. 发明授权

US06194618B1 Method of producing isobutylene glycol 有权
标题翻译：制备异丁二醇的方法
公开(公告)号：US06194618B1
公开(公告)日：2001-02-27
申请号：US09464195
申请日：1999-12-16
申请人： Takashi Okawa
发明人： Takashi Okawa
IPC分类号： C07C29149
CPC分类号： C07C29/149 , C07C31/20
摘要： Isobutylene glycol is produced with a high yield by catalytically reducing methyl hydroxyisobutyrate in the presence of a catalyst containing at least one of copper and ruthenium. The reduction of methyl hydroxyisobutyrate in the presence of the specific catalyst involves selective reduction of only ester group.
摘要翻译：在含有铜和钌中的至少一种的催化剂存在下，通过催化还原甲基羟基异丁酸酯以高产率制备异丁二醇。在特定催化剂存在下还原甲基异丁酸甲酯包括选择性还原仅酯基。

70. 发明授权

US5903342A Inspection method and device of wafer surface 失效
标题翻译：晶圆表面检查方法及装置
公开(公告)号：US5903342A
公开(公告)日：1999-05-11
申请号：US629266
申请日：1996-04-08
申请人： Yasuo Yatsugake , Takashi Okawa , Norihiko Mizutani , Shigeharu Iizuka
发明人： Yasuo Yatsugake , Takashi Okawa , Norihiko Mizutani , Shigeharu Iizuka
IPC分类号： G01N21/94 , G01N21/88
CPC分类号： G01N21/94
摘要： A wafer surface inspection method and device including a low angle light receiving system having an elevation angle less than 30.degree. with reference to the wafer surface, and a high angle light receiving system having an elevation angle equal to or larger than 30.degree., scans the wafer with a laser beam, receives scattered light to perform extraneous substance detection in response to the scanning, and detects wafer defects only by the high angle light receiving system, and sticking extraneous substances by either the low angle receiving system or by both the low angle light receiving system and the high angle light receiving system.
摘要翻译：一种晶片表面检查方法和装置，包括相对于晶片表面具有小于30°的仰角的低角度光接收系统和具有等于或大于30°的仰角的高角度光接收系统，扫描具有激光束的晶片，响应于扫描而接收散射光以进行外来物质检测，并且仅通过高角度光接收系统检测晶片缺陷，并且通过低角度接收系统或低角度接收系统粘附外来物质光接收系统和高角度光接收系统。

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