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61. 发明授权

US5336918A Semiconductor pressure sensor and method of fabricating the same 失效
标题翻译：半导体压力传感器及其制造方法
公开(公告)号：US5336918A
公开(公告)日：1994-08-09
申请号：US51914
申请日：1993-04-26
申请人： Takashi Ipposhi , Tadashi Nishimura
发明人： Takashi Ipposhi , Tadashi Nishimura
IPC分类号： G01L9/04 , G01L9/00 , H01L21/20 , H01L21/84 , H01L29/84 , H01L29/06
CPC分类号： G01L9/0055 , G01L9/0042
摘要： Disclosed herein is a semiconductor pressure sensor which can improve a withstand voltage across piezoresistance and interconnection layers and a semiconductor substrate. In this semiconductor pressure sensor, a plurality of dot seeds, which are regions for serving as seed crystals for growing monocrystals, are arranged to enclose the piezoresistance, and the interconnection layer is formed to pass through a clearance between adjacent ones of the dot seeds.
摘要翻译：这里公开了一种半导体压力传感器，其能够改善压电阻和互连层和半导体衬底之间的耐受电压。在该半导体压力传感器中，布置作为用于生长单晶的籽晶的区域的多个点状籽粒，以包围压阻，并且互连层形成为通过相邻点状种子之间的间隙。

62. 发明授权

US4914628A Semiconductor memory device having substrate isolation of a switching transistor and storage capacitor 失效
标题翻译：具有开关晶体管和存储电容器的衬底隔离的半导体存储器件
公开(公告)号：US4914628A
公开(公告)日：1990-04-03
申请号：US124429
申请日：1987-11-18
申请人： Tadashi Nishimura
发明人： Tadashi Nishimura
IPC分类号： H01L27/10 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/10841
摘要： A semiconductor memory has a first insulating layer formed on one major surface of a silicon single crystal substrate having a hole portion. The hole portion is filled with a material of a first conductivity type up to the depth of the first insulating layer. A first single crystal silicon layer is formed on the first insulating layer and a diffused region of the first single crystal silicon layer is formed on the first insulating layer and on the material of a first conductivity type. Source and drain regions are formed by doping the first single crystal silicon layer with a first impurity up to high degree of concentration. A second insulating layer is then formed on the first single crystal silicon layer with a low resistive portion formed on this second insulating layer to form source and drain regions. A second single crystal silicon layer is formed along the wall surfaces of the second insulating layer and the low resistive portion. A gate insulating film is formed along wall surfaces of the second single crystal silicon layer and the diffused region on the low resistive portion and having the hole portion on the material of a first conductivity type. Finally, a gate electrode is formed by filling the hole portion of the gate insulating film with the material of a first conductivity type.
摘要翻译：半导体存储器具有形成在具有孔部分的硅单晶衬底的一个主表面上的第一绝缘层。孔部分填充有直到第一绝缘层的深度的第一导电类型的材料。在第一绝缘层上形成第一单晶硅层，并且在第一绝缘层和第一导电类型的材料上形成第一单晶硅层的扩散区域。源极和漏极区通过以高浓度浓度掺杂第一杂质的第一单晶硅层而形成。然后在第一单晶硅层上形成第二绝缘层，在该第二绝缘层上形成低电阻部分以形成源区和漏区。沿着第二绝缘层和低电阻部分的壁表面形成第二单晶硅层。栅极绝缘膜沿着第二单晶硅层的壁表面和低电阻部分上的扩散区域形成，并且在第一导电类型的材料上具有孔部分。最后，通过用第一导电类型的材料填充栅极绝缘膜的孔部分来形成栅电极。

63. 发明授权

US4797723A Stacked semiconductor device 失效
标题翻译：堆叠半导体器件
公开(公告)号：US4797723A
公开(公告)日：1989-01-10
申请号：US96212
申请日：1987-09-08
申请人： Tadashi Nishimura , Yoichi Akasaka
发明人： Tadashi Nishimura , Yoichi Akasaka
IPC分类号： H01L27/00 , H01L25/065 , H01L27/14 , H01L27/02 , H01L29/04 , H01L29/06 , H01L29/78
CPC分类号： H01L25/0657 , H01L2225/06589 , H01L2924/0002 , Y10S148/164
摘要： A stacked semiconductor device includes a first integrated circuit formed on the principal surface of a semiconductor layer and containing active elements, and a second integrated circuit formed on the first integrated circuit through an insulation layer and containing active elements. The second integrated circuit is formed on that part of the surface of the first integrated circuit which is exclusive of selected active elements, to establish an open space for heat dissipation.
摘要翻译：叠层半导体器件包括形成在半导体层的主表面上并包含有源元件的第一集成电路，以及通过绝缘层形成在第一集成电路上并包含有源元件的第二集成电路。第二集成电路形成在第一集成电路的除选择的有源元件之外的部分表面上，以建立用于散热的开放空间。

64. 发明授权

US4514895A Method of forming field-effect transistors using selectively beam-crystallized polysilicon channel regions 失效
标题翻译：使用选择性束结晶多晶硅沟道区形成场效应晶体管的方法
公开(公告)号：US4514895A
公开(公告)日：1985-05-07
申请号：US586861
申请日：1984-03-06
申请人： Tadashi Nishimura
发明人： Tadashi Nishimura
IPC分类号： H01L27/00 , H01L21/02 , H01L21/20 , H01L21/263 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786 , H01L21/265 , H01L21/306 , H01L21/268
CPC分类号： H01L29/78 , H01L21/2026 , H01L21/2636 , H01L29/78654
摘要： A method of manufacturing MOS field-effect transistors using a wafer (40) having a polycrystal or amorphous semiconductor layer formed on an insulator comprises a step in which an energy beam (44) is applied to the semiconductor layer by scanning the beam intermittently and correlatively to the wafer so as to heat locally the semiconductor layer whereby only a plurality of portions (41) contained in the semiconductor layer and assigned for forming channel regions of MOS field-effect transistors are monocrystallized or the crystalline grains in the above described positions are made large. According to the present invention, a strain occurring in a recrystallized semiconductor can be mitigated by the selective heating.
摘要翻译：使用在绝缘体上形成多晶体或非晶半导体层的晶片（40）制造MOS场效应晶体管的方法包括以下步骤：通过间歇地并相关地扫描光束将能量束（44）施加到半导体层以便半导体层局部加热，由此只有包含在半导体层中并被分配用于形成MOS场效应晶体管的沟道区的多个部分（41）被单晶化或者在上述位置中形成晶粒大。根据本发明，通过选择性加热可以减轻再结晶半导体中产生的应变。

65. 发明授权

US4414242A Process for fabricating a semiconductor device 失效
标题翻译：制造半导体器件的工艺
公开(公告)号：US4414242A
公开(公告)日：1983-11-08
申请号：US444095
申请日：1982-11-24
申请人： Tadashi Nishimura , Yoji Mashiko
发明人： Tadashi Nishimura , Yoji Mashiko
IPC分类号： H01L27/12 , H01L21/02 , H01L21/20 , H01L21/263 , H01L21/268 , H01L21/336 , H01L21/762 , H01L21/86 , H01L29/786 , B05D3/06
CPC分类号： H01L21/86 , H01L21/2026 , H01L21/2636 , H01L21/268 , H01L21/76264 , H01L21/76272 , H01L21/76281 , Y10S117/904 , Y10S148/091 , Y10S148/093
摘要： A process for producing a semiconductor device includes the step of locally heating and fusing an island of a polycrystalline or amorphous semiconductor layer which is formed on and surrounded by an insulator. In the process, at least one ridge is formed on the underlying insulator before the formation of the semiconductor layer.
摘要翻译：制造半导体器件的方法包括：局部加热和熔融形成在绝缘体上并被绝缘体包围的多晶或非晶半导体层的岛。在该过程中，在形成半导体层之前，在下面的绝缘体上形成至少一个脊。

66. 发明授权

US4397328A Cleaning apparatus of tubular materials for use in pickling facilities for the same 失效
标题翻译：用于酸洗设备的管状材料的清洁装置
公开(公告)号：US4397328A
公开(公告)日：1983-08-09
申请号：US308823
申请日：1981-10-05
申请人： Yoshiro Tanaka , Hayato Moroi , Yukihiko Kamatsu , Kazuo Akagi , Ryujiro Shitamatsu , Tadashi Nishimura
发明人： Yoshiro Tanaka , Hayato Moroi , Yukihiko Kamatsu , Kazuo Akagi , Ryujiro Shitamatsu , Tadashi Nishimura
IPC分类号： B65G49/04 , C23G3/04 , B08B3/02
CPC分类号： C23G3/04
摘要： A cleaning apparatus for use in pickling facilities for tubular members such as zirconium or zirconium alloy tubes. The apparatus includes a travelling crane for conveying and loading the tubular members from one cleaning tank to another, a pair of endless wrapping connectors such as endless chains spacedly and circulatably provided in at least one tank, for example, in a first cleaning tank filled with slightly warm water below the level of its cleaning fluid, and a plurality of feed claws provided with an interval therebetween on each of the endless wrapping connectors along the length of the same so as to prevent the tubular members from contacting one another during cleaning treatment. Thus, development of stain or physical damage such as scratches or dents is eliminated or minimized. It is possible to tentatively stock the tubular members on the endless wrapping connectors so as to perform a smooth and continuous pickling and cleaning operation of such tubular members.
摘要翻译：一种用于诸如锆或锆合金管的管状构件的酸洗设备的清洁装置。该设备包括用于将管状构件从一个清洁槽输送和装载到另一个清洁槽的移动式起重机，一对环形缠绕连接器，例如在至少一个罐中间隔并且可循环地设置的环形链，例如在填充有稍微温水低于其清洁液的水平面，以及多个进给爪，其沿着其长度在每个环形缠绕连接器上设置有间隔，以防止管状构件在清洁处理期间彼此接触。因此，消除或最小化污渍或物理损伤如划痕或凹陷的发展。可以暂时将管状部件储存在环形包装连接器上，以便执行这种管状部件的平滑且连续的酸洗和清洁操作。

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