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    • 66. 发明授权
    • Method for chemical mechanical polishing of thin films using end-point indicator structures
    • 使用端点指示器结构对薄膜进行化学机械抛光的方法
    • US06723643B1
    • 2004-04-20
    • US10391435
    • 2003-03-17
    • Wei PanDavid R. EvansAllen W. Burmaster
    • Wei PanDavid R. EvansAllen W. Burmaster
    • H01L2100
    • G11C13/0007G11C2213/31H01L45/04H01L45/1233H01L45/147H01L45/1683
    • A method of CMP thin films during fabrication of IC devices includes preparing a substrate, including building IC component structures on the substrate; depositing a bottom electrode on the substrate; depositing a first CMP layer having a first known CMP selectivity on the substrate; patterning the first CMP layer to form a pattern having a lower margin; forming indicator structures on the first CMP layer in the pattern; depositing a second CMP layer having a second known CMP selectivity relative to that of the first CMP layer, including depositing portions of the second CMP layer in the pattern of the first CMP layer; CMP the structure so that the indicator structures are removed and any portion of the first CMP layer and second CMP layer are removed to a level corresponding to the lower margin; and completing the IC structure.
    • 在IC器件制造期间的CMP薄膜的方法包括制备衬底,包括在衬底上建立IC组件结构; 在底物上沉积底部电极; 在衬底上沉积具有第一已知CMP选择性的第一CMP层; 图案化第一CMP层以形成具有较低边缘的图案; 在图案中的第一CMP层上形成指示器结构; 沉积相对于第一CMP层具有第二已知CMP选择性的第二CMP层,包括以第一CMP层的图案沉积第二CMP层的部分; CMP结构,使得指示器结构被去除,并且第一CMP层和第二CMP层的任何部分被去除到对应于下边缘的水平; 并完成IC结构。
    • 67. 发明授权
    • Thin encapsulation process for making thin film read/write heads
    • 用于制造薄膜读/写头的薄封装工艺
    • US6099699A
    • 2000-08-08
    • US64212
    • 1998-04-22
    • Wei PanAnn KangJerome Marcelino
    • Wei PanAnn KangJerome Marcelino
    • C23C14/34G11B5/31G11B5/39
    • G11B5/3163C23C14/34G11B5/3106G11B5/313G11B5/3967
    • A process for providing a thin encapsulation layer for thin film heads includes controlling the bias voltage of the substrate and head during the encapsulation layer deposition process. The bias voltage is first maintained at approximately 60 volts while the standard encapsulation overcoat portion of the layer is deposited. This may take approximately one hour. Over the next thirty minutes, the bias voltage is ramped from approximately 60 volts to approximately 200 volts in a gradual, linear manner to reduce the stress on the wafer and heads. The bias voltage is then maintained at approximately 200 volts for the next three hours while the remainder of the encapsulation layer is deposited. Because of the higher bias voltage, the layer is deposited in a substantially planar manner so that there is no need for a lapping back process. Stress to the head is minimized by ramping the bias voltage. In addition, relatively short studs can be used for routing signals to and from the read/write elements of the head. The encapsulation layer is etched back in the vicinity of the studs with an NaOH/EDTA solution which produces via sidewalls with shallow angles, in the range of 20 degrees from horizontal.
    • 提供用于薄膜头的薄封装层的工艺包括在封装层沉积工艺期间控制衬底和头的偏置电压。 首先将偏置电压保持在约60伏,同时沉积该层的标准封装外涂层部分。 这可能需要大约一个小时。 在接下来的三十分钟内,偏置电压以逐渐的线性方式从大约60伏斜升到大约200伏,以减小晶片和磁头上的应力。 然后在接下来的三个小时内将偏置电压维持在约200伏,同时沉积封装层的其余部分。 由于偏置电压较高,所以该层以基本上平面的方式沉积,使得不需要回扫工艺。 通过斜坡偏置电压来减小头部的压力。 此外,可以使用相对较短的螺柱将信号路由到头部的读/写元件和/从头的读/写元件路由。 密封层在柱头附近用NaOH / EDTA溶液回蚀,NaOH / EDTA溶液通过具有较小角度的侧壁产生水平20度的范围。
    • 70. 发明申请
    • Dye-Sensitized Solar Cell with Energy-Donor Material Enhancement
    • 染料敏化太阳能电池与能量供体材料增强
    • US20140216554A1
    • 2014-08-07
    • US13762527
    • 2013-02-08
    • Sean VailDavid EvansWei Pan
    • Sean VailDavid EvansWei Pan
    • H01G9/20H01G9/00
    • H01G9/2018H01G9/2031H01G9/2059H01L2251/305H01L2251/306Y02E10/542
    • A dye-sensitized solar cell (DSC) is provided with energy-donor enhancement. A transparent conductive oxide (TCO) film is formed overlying a transparent substrate, and an n-type semiconductor layer is formed overlying the TCO. The n-type semiconductor layer is exposed to a dissolved dye (D1) having optical absorbance local maximums at a first wavelength (A1) and second wavelength (A2), longer than the first wavelength. The n-type semiconductor layer is functionalized with the dye (D1), forming a sensitized n-type semiconductor layer. A redox electrolyte is added that includes a dissolved energy-donor material (ED1) in contact with the sensitized n-type semiconductor layer. The energy-donor material (ED1) is capable of non-radiative energy transfer to the dye (D1), which is capable of charge transfer to the n-type semiconductor. In one aspect, the dye (D1) is a metalloporphyrin, such as zinc porphyrin (ZnP), and the energy-donor material (ED1) includes a perylene-monoimide material or chemically modified perylene-monoimide material.
    • 对染料敏化太阳能电池(DSC)提供能量供体增强。 在透明基板上形成透明导电氧化物(TCO)膜,形成覆盖在TCO上的n型半导体层。 n型半导体层暴露于比第一波长长的第一波长(A1)和第二波长(A2)处具有吸光度局部最大值的溶解染料(D1)。 n型半导体层用染料(D1)功能化,形成敏化的n型半导体层。 加入氧化还原电解质,其包括与敏化的n型半导体层接触的溶解的能量给体材料(ED1)。 能量供体材料(ED1)能够将非辐射能量转移到能够电荷转移到n型半导体的染料(D1)上。 一方面,染料(D1)是金属卟啉,例如卟啉锌(ZnP),能量供体材料(ED1)包括苝单酰亚胺材料或化学改性的二萘嵌苯单酰亚胺材料。