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61. 发明申请

US20060190875A1 Pattern extracting system, method for extracting measuring points, method for extracting patterns, and computer program product for extracting patterns 审中-公开
标题翻译：模式提取系统，提取测点的方法，提取模式的方法，以及提取模式的计算机程序产品
公开(公告)号：US20060190875A1
公开(公告)日：2006-08-24
申请号：US11325515
申请日：2006-01-05
申请人： Yukiyasu Arisawa , Osamu Ikenaga , Shigeki Nojima , Shigeru Hasebe
发明人： Yukiyasu Arisawa , Osamu Ikenaga , Shigeki Nojima , Shigeru Hasebe
IPC分类号： G06F17/50
CPC分类号： G03F7/7065 , G03F1/36 , G03F1/68 , G03F1/84
摘要： A pattern extracting system includes a sampler configured to sample test candidate patterns from a circuit pattern, based on a lithographic process tolerance, a space classification module configured to classify the test candidate patterns into space distance groups depending on a space distance to an adjacent pattern, a density classification module configured to classify the test candidate patterns into pattern density groups depending on a surrounding pattern density, and an assessment module configured to assess actual measurements of dimensional errors of the test candidate patterns classified into the space distance groups and the pattern density groups.
摘要翻译：模式提取系统包括：取样器，被配置为基于光刻处理容限从电路图案中取样测试候选图案;空间分类模块，被配置为根据与相邻图案的空间距离将测试候选图案分类为空间距离组; 密度分类模块，其被配置为根据周围图案密度将测试候选图案分类为图案密度组;以及评估模块，其被配置为评估分类为空间距离组和图案密度组的测试候选模式的尺寸误差的实际测量值。

62. 发明申请

US20060136862A1 Pattern data verification method, pattern data creation method, exposure mask manufacturing method, semiconductor device manufacturing method, and computer program product 有权
公开(公告)号：US20060136862A1
公开(公告)日：2006-06-22
申请号：US11287205
申请日：2005-11-28
申请人： Shigeki Nojima , Akira Hamaguchi
发明人： Shigeki Nojima , Akira Hamaguchi
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： A pattern data verification method includes preparing exposure data related to a circuit pattern to be formed on a substrate, calculating a characteristic of an image of an exposure pattern on a resist film to be applied on the substrate, the exposure pattern corresponding to the exposure data, calculating a film thickness of the resist film after being developed based on the characteristic of the image of the exposure pattern, and determining whether the exposure data is acceptable or rejectable based on the film thickness of the resist film after being developed.

63. 发明申请

US20060008135A1 Semiconductor integrated circuit pattern verification method, photomask manufacturing method, semiconductor integrated circuit device manufacturing method, and program for implementing semiconductor integrated circuit pattern verification method 有权
公开(公告)号：US20060008135A1
公开(公告)日：2006-01-12
申请号：US11176181
申请日：2005-07-08
申请人： Shigeki Nojima
发明人： Shigeki Nojima
IPC分类号： G06K9/00 , G06F17/50
CPC分类号： G06T7/001 , G03F1/36 , G06F17/5081 , G06T2207/30148
摘要： A semiconductor integrated circuit pattern verification method includes executing simulation to obtain a simulation pattern to be formed on a substrate on the basis of a semiconductor integrated circuit design pattern, comparing the simulation pattern and the design pattern that is required on the substrate to detect a first difference value, extracting error candidates at which the first difference value is not less than a first predetermined value, comparing pattern shapes at the error candidates to detect a second difference value, combining, into one group, patterns whose second difference values are not more than a second predetermined value, and extracting a predetermined number of patterns from each group and verifying error candidates of the extracted patterns.

64. 发明申请

US20050166172A1 Critical pattern extracting method, critical pattern extracting program, and method of manufacturing semiconductor device 审中-公开
标题翻译：关键模式提取方法，关键模式提取程序以及制造半导体器件的方法
公开(公告)号：US20050166172A1
公开(公告)日：2005-07-28
申请号：US11006532
申请日：2004-12-08
申请人： Daisuke Kawamura , Shigeki Nojima , Shoji Mimotogi
发明人： Daisuke Kawamura , Shigeki Nojima , Shoji Mimotogi
IPC分类号： G03F1/36 , G03F1/68 , G03F1/70 , G03F7/00 , G03F9/00 , G06F17/50 , H01L21/027
CPC分类号： G03F1/36
摘要： According to a aspect of the present invention, there is provided a critical pattern extracting method which extracts critical patterns from mask data for manufacturing a photomask used in a lithography step, comprising at least: extracting mask data of a peripheral region within a predetermined range from an interested portion to be decided in the mask data; defining portions constituting the peripheral region as reference portions and calculating process generation amounts generated from the each reference portion in the lithography step by simulation; performing a predetermined arithmetic operation by using the process generation amounts and distances between the interested portion and the each reference portion; performing multiple integral of an arithmetic operation value obtained by the predetermined arithmetic operation in the peripheral region or an arithmetic operation equivalent to the multiple integral to calculate a process affecter amount; and comparing the process affecter amount with a predetermined threshold value.
摘要翻译：根据本发明的一个方面，提供了一种临界图案提取方法，其从用于制造光刻步骤中使用的光掩模的掩模数据中提取临界图案，该方法至少包括：从预定范围内提取外围区域的掩模数据，在掩模数据中确定的感兴趣部分; 将构成周边区域的部分作为参考部分，并通过模拟计算从光刻步骤中的每个参考部分产生的处理生成量; 通过使用感兴趣部分和每个参考部分之间的处理产生量和距离来执行预定的算术运算; 执行通过周边区域中的预定算术运算获得的算术运算值的多项积分或与多项积分相当的算术运算来计算加工效果量; 以及将所述过程影响器量与预定阈值进行比较。

65. 发明授权

US06649310B2 Method of manufacturing photomask 有权
标题翻译：制造光掩模的方法
公开(公告)号：US06649310B2
公开(公告)日：2003-11-18
申请号：US09940578
申请日：2001-08-29
申请人： Masamitsu Itoh , Shigeki Nojima , Shoji Mimotogi , Osamu Ikenaga
发明人： Masamitsu Itoh , Shigeki Nojima , Shoji Mimotogi , Osamu Ikenaga
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F7/70558 , G03F7/70591 , G03F7/70625
摘要： A method of manufacturing a photomask includes determining an average value of dimensions of a pattern in a photomask. determining an in-plane uniformity of the dimensions, determining an exposure latitude on the basis of the average value and the in-plane uniformity. The exposure latitude depends on dimensional accuracy of the pattern. Judging if the photomask is defective or non-defective is made on the basis of whether or not the exposure latitude falls within a prescribed exposure latitude
摘要翻译：制造光掩模的方法包括确定光掩模中图案的尺寸的平均值。确定尺寸的面内均匀性，基于平均值和平面内均匀性确定曝光宽容度。曝光宽容度取决于图案的尺寸精度。根据曝光宽容度是否落在规定的曝光宽容范围内，判断光掩模是否有缺陷或无缺陷

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