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1. 发明授权

US06649310B2 Method of manufacturing photomask 有权
标题翻译：制造光掩模的方法
公开(公告)号：US06649310B2
公开(公告)日：2003-11-18
申请号：US09940578
申请日：2001-08-29
申请人： Masamitsu Itoh , Shigeki Nojima , Shoji Mimotogi , Osamu Ikenaga
发明人： Masamitsu Itoh , Shigeki Nojima , Shoji Mimotogi , Osamu Ikenaga
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F7/70558 , G03F7/70591 , G03F7/70625
摘要： A method of manufacturing a photomask includes determining an average value of dimensions of a pattern in a photomask. determining an in-plane uniformity of the dimensions, determining an exposure latitude on the basis of the average value and the in-plane uniformity. The exposure latitude depends on dimensional accuracy of the pattern. Judging if the photomask is defective or non-defective is made on the basis of whether or not the exposure latitude falls within a prescribed exposure latitude
摘要翻译：制造光掩模的方法包括确定光掩模中图案的尺寸的平均值。确定尺寸的面内均匀性，基于平均值和平面内均匀性确定曝光宽容度。曝光宽容度取决于图案的尺寸精度。根据曝光宽容度是否落在规定的曝光宽容范围内，判断光掩模是否有缺陷或无缺陷

2. 发明申请

US20090202924A1 METHOD OF EVALUATING A PHOTO MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：评估照相掩模的方法和制造半导体器件的方法
公开(公告)号：US20090202924A1
公开(公告)日：2009-08-13
申请号：US12360929
申请日：2009-01-28
申请人： Hiroki YAMAMOTO , Masamitsu Itoh , Osamu Ikenaga , Shoji Mimotogi , Hideki Kanai , Yukiyasu Arisawa
发明人： Hiroki YAMAMOTO , Masamitsu Itoh , Osamu Ikenaga , Shoji Mimotogi , Hideki Kanai , Yukiyasu Arisawa
IPC分类号： G03F1/00 , H01L21/027
CPC分类号： G03F1/84
摘要： A method of evaluating a photo mask, includes measuring each dimension of a plurality of pattern portions of a mask pattern formed on a photo mask, obtaining an inter-pattern distance between the pattern portion and a pattern different from the pattern portion with respect to each of the pattern portions, obtaining a dimensional difference between the measured dimension of the pattern portion and a target dimension of the pattern portion with respect to each of the pattern portions, grouping the dimensional difference obtained for each pattern portion into a plurality of groups in accordance with the inter-pattern distance obtained for each pattern portion, obtaining an evaluation value based on the dimensional difference in each group with respect to each of the groups, and evaluating the photo mask based on the evaluation value.
摘要翻译：一种评估光掩模的方法，包括测量形成在光掩模上的掩模图案的多个图案部分的每个尺寸，获得图案部分与不同于图案部分的图案之间的图案间距离获得图形部分的测量尺寸与图案部分相对于每个图案部分的目标尺寸之间的尺寸差，将根据每个图案部分获得的尺寸差分成多组对于每个图案部分获得的图案间距离，基于每个组中的每个组的尺寸差获得评估值，并且基于评估值来评估光罩。

3. 发明授权

US07229721B2 Method for evaluating photo mask and method for manufacturing semiconductor device 失效
标题翻译：评估光掩膜的方法和制造半导体器件的方法
公开(公告)号：US07229721B2
公开(公告)日：2007-06-12
申请号：US10705954
申请日：2003-11-13
申请人： Shoji Mimotogi , Shigeki Nojima , Osamu Ikenaga
发明人： Shoji Mimotogi , Shigeki Nojima , Osamu Ikenaga
IPC分类号： G03F1/00
CPC分类号： G03F7/70625 , G03F1/44 , G03F1/68 , G03F1/78 , G03F7/705
摘要： A method for evaluating a photo mask comprises preparing a photo mask including a unit drawing pattern, finding a dimensional variation relating to the photo mask, the dimensional variation including first and second dimensional variations, the first dimensional variation occurring due to a positional displacement and size mismatch of the unit drawing pattern in the photo mask and the second dimensional variation occurring due to etching and development relating to a manufacturing of the photo mask, estimating a deteriorated amount of an exposure latitude occurring due to the dimensional variation of the photo mask using the dimensional variation and a degree of influence of the dimensional variation for the exposure latitude, and judging quality of the photo mask by comparing the deteriorated amount of the exposure latitude and an allowable deteriorated amount of the exposure latitude.
摘要翻译：一种用于评估光掩模的方法包括制备包括单元绘图图案的光掩模，找到与光掩模相关的尺寸变化，包括第一和第二尺寸变化的尺寸变化，由于位置偏移和尺寸而发生的第一尺寸变化光掩模中的单位绘图图案的不匹配以及由于与光掩模的制造相关的蚀刻和显影而发生的第二尺寸变化，估计由于光掩膜的尺寸变化而产生的曝光宽容度的恶化量，通过比较曝光宽容度的劣化量和曝光宽容度的允许恶化量来判断曝光宽容度的尺寸变化和影响程度，以及判断光掩模的质量。

4. 发明授权

US07090949B2 Method of manufacturing a photo mask and method of manufacturing a semiconductor device 有权
标题翻译：制造光掩模的方法和制造半导体器件的方法
公开(公告)号：US07090949B2
公开(公告)日：2006-08-15
申请号：US10724738
申请日：2003-12-02
申请人： Shigeki Nojima , Shoji Mimotogi , Satoshi Tanaka , Toshiya Kotani , Shigeru Hasebe , Koji Hashimoto , Soichi Inoue , Osamu Ikenaga
发明人： Shigeki Nojima , Shoji Mimotogi , Satoshi Tanaka , Toshiya Kotani , Shigeru Hasebe , Koji Hashimoto , Soichi Inoue , Osamu Ikenaga
IPC分类号： G01F9/00
CPC分类号： G03F1/36 , G03F1/68
摘要： Disclosed is a method of manufacturing a photo mask comprising preparing mask data for a mask pattern to be formed on a mask substrate, calculating edge moving sensitivity with respect to each of patterns included in the mask pattern using the mask data, the edge moving sensitivity corresponding to a difference between a proper exposure dose and an exposure dose to be set when a pattern edge varies, determining a monitor portion of the mask pattern, based on the calculated edge moving sensitivity, actually forming the mask pattern on the mask substrate, acquiring a dimension of a pattern included in that portion of the mask pattern formed on the mask substrate which corresponds to the monitor portion, determining evaluation value for the mask pattern formed on the mask substrate, based on the acquired dimension, and determining whether the evaluation value satisfies predetermined conditions.
摘要翻译：公开了一种制造光掩模的方法，其包括：对掩模基板上形成的掩模图案准备掩模数据，使用掩模数据计算相对于包含在掩模图案中的每个图案的边缘移动灵敏度，边缘移动灵敏度对应对于在图案边缘变化时要设置的适当曝光剂量和曝光剂量之间的差异，基于计算出的边缘移动灵敏度确定掩模图案的监视部分，实际在掩模基板上形成掩模图案，获取基于所获取的尺寸，确定在掩模基板上形成的掩模图案的评估值，并且确定评估值是否满足的掩模图案的形成在掩模基板上的对应于监视部分的掩模图案的部分中的图案的尺寸预定条件。

5. 发明授权

US07912275B2 Method of evaluating a photo mask and method of manufacturing a semiconductor device 有权
标题翻译：评估光掩模的方法和制造半导体器件的方法
公开(公告)号：US07912275B2
公开(公告)日：2011-03-22
申请号：US12360929
申请日：2009-01-28
申请人： Hiroki Yamamoto , Masamitsu Itoh , Osamu Ikenaga , Shoji Mimotogi , Hideki Kanai , Yukiyasu Arisawa
发明人： Hiroki Yamamoto , Masamitsu Itoh , Osamu Ikenaga , Shoji Mimotogi , Hideki Kanai , Yukiyasu Arisawa
IPC分类号： G06K9/00 , G03F1/00
CPC分类号： G03F1/84
摘要： A method of evaluating a photo mask, includes measuring each dimension of a plurality of pattern portions of a mask pattern formed on a photo mask, obtaining an inter-pattern distance between the pattern portion and a pattern different from the pattern portion with respect to each of the pattern portions, obtaining a dimensional difference between the measured dimension of the pattern portion and a target dimension of the pattern portion with respect to each of the pattern portions, grouping the dimensional difference obtained for each pattern portion into a plurality of groups in accordance with the inter-pattern distance obtained for each pattern portion, obtaining an evaluation value based on the dimensional difference in each group with respect to each of the groups, and evaluating the photo mask based on the evaluation value.
摘要翻译：一种评估光掩模的方法，包括测量形成在光掩模上的掩模图案的多个图案部分的每个尺寸，获得图案部分与不同于图案部分的图案之间的图案间距离获得图形部分的测量尺寸与图案部分相对于每个图案部分的目标尺寸之间的尺寸差，将根据每个图案部分获得的尺寸差分成多组对于每个图案部分获得的图案间距离，基于每个组中的每个组的尺寸差获得评估值，并且基于评估值来评估光罩。

6. 发明授权

US07793252B2 Mask pattern preparation method, semiconductor device manufacturing method and recording medium 失效
标题翻译：掩模图案制备方法，半导体器件制造方法和记录介质
公开(公告)号：US07793252B2
公开(公告)日：2010-09-07
申请号：US12222479
申请日：2008-08-11
申请人： Toshiya Kotani , Shigeki Nojima , Shoji Mimotogi
发明人： Toshiya Kotani , Shigeki Nojima , Shoji Mimotogi
IPC分类号： G06F17/50 , G03F9/00
CPC分类号： G03F7/70433 , G03F7/705
摘要： A lithography simulation method includes: taking in design data of a pattern to be formed on a substrate and mask data to prepare a mask pattern used in forming a latent image of the pattern on the substrate by transmission of an energy ray; obtaining the latent image of the pattern by calculation of an intensity of the energy ray; locally changing, at least in a portion corresponding to a pattern to be interested, a relative position in a direction of the intensity of the energy ray between a latent image curve and a reference intensity line in accordance with a distance between the pattern to be interested and a pattern of a neighboring region, the latent image curve being an intensity distribution curve of the energy ray constituting the latent image, the reference intensity line being defined to specify a position of an edge of the pattern to be interested; and calculating a distance between intersections of a portion of the latent image curve corresponding to the pattern to be interested and the reference intensity line in the changed relative position to define an interested line width of the pattern to be interested.
摘要翻译：光刻模拟方法包括：获取要在基板上形成的图案的设计数据，并且掩模数据，以通过透射能量线来制备用于在基板上形成图案的潜像所使用的掩模图案; 通过计算能量射线的强度来获得图案的潜像; 至少在与感兴趣的图案对应的部分中，根据感兴趣的图案之间的距离，在潜像图像曲线和参考强度线之间的能量射线的强度的方向上的相对位置以及相邻区域的图案，所述潜像曲线是构成所述潜像的能量射线的强度分布曲线，所述基准强度线被定义为指定所述图案的边缘的位置; 以及计算与感兴趣的图案对应的潜在图像曲线的一部分的交点与变化的相对位置中的基准强度线之间的距离，以定义感兴趣的图案的感兴趣的线宽。

7. 发明申请

US20070019058A1 Lithography simulation method, mask pattern preparation method, semiconductor device manufacturing method and recording medium 失效
标题翻译：光刻模拟法，掩模图案制备方法，半导体器件制造方法和记录介质
公开(公告)号：US20070019058A1
公开(公告)日：2007-01-25
申请号：US11485554
申请日：2006-07-13
申请人： Toshiya Kotani , Shigeki Nojima , Shoji Mimotogi
发明人： Toshiya Kotani , Shigeki Nojima , Shoji Mimotogi
IPC分类号： B41J2/385
CPC分类号： G03F7/70433 , G03F7/705
摘要： A lithography simulation method includes: taking in design data of a pattern to be formed on a substrate and mask data to prepare a mask pattern used in forming a latent image of the pattern on the substrate by transmission of an energy ray; obtaining the latent image of the pattern by calculation of an intensity of the energy ray; locally changing, at least in a portion corresponding to a pattern to be interested, a relative position in a direction of the intensity of the energy ray between a latent image curve and a reference intensity line in accordance with a distance between the pattern to be interested and a pattern of a neighboring region, the latent image curve being an intensity distribution curve of the energy ray constituting the latent image, the reference intensity line being defined to specify a position of an edge of the pattern to be interested; and calculating a distance between intersections of a portion of the latent image curve corresponding to the pattern to be interested and the reference intensity line in the changed relative position to define an interested line width of the pattern to be interested.
摘要翻译：光刻模拟方法包括：获取要在基板上形成的图案的设计数据，并且掩模数据，以通过透射能量线来制备用于在基板上形成图案的潜像所使用的掩模图案; 通过计算能量射线的强度来获得图案的潜像; 至少在与感兴趣的图案对应的部分中，根据感兴趣的图案之间的距离，在潜像图像曲线和参考强度线之间的能量射线的强度的方向上的相对位置以及相邻区域的图案，所述潜像曲线是构成所述潜像的能量射线的强度分布曲线，所述基准强度线被定义为指定所述图案的边缘的位置; 以及计算与感兴趣的图案对应的潜在图像曲线的一部分的交点与变化的相对位置中的基准强度线之间的距离，以定义感兴趣的图案的感兴趣的线宽。

8. 发明授权

US07426712B2 Lithography simulation method and recording medium 失效
标题翻译：平版印刷模拟方法和记录介质
公开(公告)号：US07426712B2
公开(公告)日：2008-09-16
申请号：US11485554
申请日：2006-07-13
申请人： Toshiya Kotani , Shigeki Nojima , Shoji Mimotogi
发明人： Toshiya Kotani , Shigeki Nojima , Shoji Mimotogi
IPC分类号： G06F17/50 , G03F9/00
CPC分类号： G03F7/70433 , G03F7/705
摘要： A lithography simulation method includes: taking in design data of a pattern to be formed on a substrate and mask data to prepare a mask pattern used in forming a latent image of the pattern on the substrate by transmission of an energy ray; obtaining the latent image of the pattern by calculation of an intensity of the energy ray; locally changing, at least in a portion corresponding to a pattern of interest, a relative position in a direction of the intensity of the energy ray between a latent image curve and a reference intensity line in accordance with a distance between the pattern of interest and a pattern of a neighboring region , the latent image curve being an intensity distribution curve of the energy ray constituting the latent image, the reference intensity line being defined to specify a position of an edge of the pattern of interest; and calculating a distance between intersections of a portion of the latent image curve corresponding to the pattern of interest and the reference intensity line in the changed relative position to define a line width of interest of the pattern of interest.
摘要翻译：光刻模拟方法包括：获取要在基板上形成的图案的设计数据，并且掩模数据，以通过透射能量线来制备用于在基板上形成图案的潜像所使用的掩模图案; 通过计算能量射线的强度来获得图案的潜像; 至少在与感兴趣的图案相对应的部分中，根据感兴趣的图案和图像之间的距离，在潜像图像曲线和参考强度线之间的能量射线的强度的方向上的相对位置，所述潜像曲线是构成所述潜像的能量射线的强度分布曲线，所述参考强度线被定义为指定所述感兴趣图案的边缘的位置; 以及计算与感兴趣的图案相对应的潜在图像曲线的一部分的交点与改变的相对位置中的参考强度线之间的距离，以限定感兴趣的图案的感兴趣的线宽。

9. 发明授权

US08809072B2 Sub-resolution assist feature arranging method and computer program product and manufacturing method of semiconductor device 有权
标题翻译：分解辅助功能布置方法和计算机程序产品及半导体器件的制造方法
公开(公告)号：US08809072B2
公开(公告)日：2014-08-19
申请号：US13051961
申请日：2011-03-18
申请人： Chikaaki Kodama , Toshiya Kotani , Shigeki Nojima , Shoji Mimotogi
发明人： Chikaaki Kodama , Toshiya Kotani , Shigeki Nojima , Shoji Mimotogi
IPC分类号： H01L21/66 , G01R31/26
CPC分类号： G03F1/36
摘要： According to a sub-resolution assist feature arranging method in embodiments, it is selected which of a rule base and a model base is set for which pattern region on pattern data corresponding to a main pattern as a type of the method of arranging the sub-resolution assist feature for improving resolution of the main pattern formed on a substrate. Then, the sub-resolution assist feature by the rule base is arranged in a pattern region set as the rule base and the sub-resolution assist feature by the model base is arranged in a pattern region set as the model base.
摘要翻译：根据实施例中的子分辨率辅助特征排列方法，选择规则库和模型库中的哪一个被设置为对应于主图案的图案数据上的哪个图案区域作为安排子图形的方法的类型，分辨率辅助功能，用于提高在基板上形成的主图案的分辨率。然后，将规则库的子分辨率辅助特征设置在设置为规则库的图案区域中，并且由模型库将子分辨率辅助特征排列在设置为模型库的图案区域中。

10. 发明申请

US20050166172A1 Critical pattern extracting method, critical pattern extracting program, and method of manufacturing semiconductor device 审中-公开
标题翻译：关键模式提取方法，关键模式提取程序以及制造半导体器件的方法
公开(公告)号：US20050166172A1
公开(公告)日：2005-07-28
申请号：US11006532
申请日：2004-12-08
申请人： Daisuke Kawamura , Shigeki Nojima , Shoji Mimotogi
发明人： Daisuke Kawamura , Shigeki Nojima , Shoji Mimotogi
IPC分类号： G03F1/36 , G03F1/68 , G03F1/70 , G03F7/00 , G03F9/00 , G06F17/50 , H01L21/027
CPC分类号： G03F1/36
摘要： According to a aspect of the present invention, there is provided a critical pattern extracting method which extracts critical patterns from mask data for manufacturing a photomask used in a lithography step, comprising at least: extracting mask data of a peripheral region within a predetermined range from an interested portion to be decided in the mask data; defining portions constituting the peripheral region as reference portions and calculating process generation amounts generated from the each reference portion in the lithography step by simulation; performing a predetermined arithmetic operation by using the process generation amounts and distances between the interested portion and the each reference portion; performing multiple integral of an arithmetic operation value obtained by the predetermined arithmetic operation in the peripheral region or an arithmetic operation equivalent to the multiple integral to calculate a process affecter amount; and comparing the process affecter amount with a predetermined threshold value.
摘要翻译：根据本发明的一个方面，提供了一种临界图案提取方法，其从用于制造光刻步骤中使用的光掩模的掩模数据中提取临界图案，该方法至少包括：从预定范围内提取外围区域的掩模数据，在掩模数据中确定的感兴趣部分; 将构成周边区域的部分作为参考部分，并通过模拟计算从光刻步骤中的每个参考部分产生的处理生成量; 通过使用感兴趣部分和每个参考部分之间的处理产生量和距离来执行预定的算术运算; 执行通过周边区域中的预定算术运算获得的算术运算值的多项积分或与多项积分相当的算术运算来计算加工效果量; 以及将所述过程影响器量与预定阈值进行比较。

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