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61. 发明授权

US5563733A Optical fiber amplifier and optical fiber transmission system 失效
标题翻译：光纤放大器和光纤传输系统
公开(公告)号：US5563733A
公开(公告)日：1996-10-08
申请号：US519457
申请日：1995-08-25
申请人： Masahiro Mitsuda , Jun Ohya , Tomoaki Uno
发明人： Masahiro Mitsuda , Jun Ohya , Tomoaki Uno
IPC分类号： H01S3/067 , H04B10/291 , H04B10/297 , H04J14/02 , H01S3/00 , H04B10/00
CPC分类号： H04B10/2912 , H01S3/06754 , H04B10/291 , H04B10/2971 , H04J14/0221 , H01S3/06787
摘要： An optical fiber amplifier for optically amplifying a plurality of signals having different wavelengths includes a series of rare earth doped optical fibers and at least one pump light source generating pump light for exciting the series of rare earth doped optical fibers. A first signal among the plurality of signals propagates through a part of the series of rare earth doped optical fibers, and a second signal among the plurality of signals propagates through all of the series of rare earth doped optical fibers.
摘要翻译：用于光学放大具有不同波长的多个信号的光纤放大器包括一系列稀土掺杂光纤和至少一个泵浦光源，用于激发该系列稀土掺杂光纤。多个信号中的第一信号通过一系列稀土掺杂光纤传播，多个信号中的第二信号通过所有的稀土掺杂光纤系列传播。

62. 发明授权

US4755015A Monolithic integrated semiconductor device of semiconductor laser and optical waveguide 失效
标题翻译：半导体激光和光波导的半导体集成半导体器件
公开(公告)号：US4755015A
公开(公告)日：1988-07-05
申请号：US884621
申请日：1986-07-11
申请人： Tomoaki Uno , Mototsugu Ogura
发明人： Tomoaki Uno , Mototsugu Ogura
IPC分类号： H01S5/00 , H01S5/026 , H01S5/10 , H01S5/12 , H01S5/125 , H01S5/20 , H01S5/343 , G02B6/10
CPC分类号： B82Y20/00 , H01S5/026 , H01S5/125 , H01S5/10 , H01S5/12 , H01S5/2059 , H01S5/34306 , H01S5/3434
摘要： A semiconductor device which includes a semiconductor substrate, an active layer in a quantum well structure disposed on said semiconductor substrate, an optical waveguide formed by a disordering part of said active layer, and a clad layer disposed on said active layer and optical waveguide. As a result of this structure, the coupling efficiency of the active layer and optical waveguide is extremely enhanced, and a high performance semiconductor device is obtained.
摘要翻译：一种半导体器件，包括半导体衬底，设置在所述半导体衬底上的量子阱结构中的有源层，由所述有源层的无序部分形成的光波导以及设置在所述有源层和光波导上的覆层。作为这种结构的结果，有源层和光波导的耦合效率极大地提高，并且获得了高性能的半导体器件。

63. 发明授权

US09418986B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09418986B2
公开(公告)日：2016-08-16
申请号：US13589160
申请日：2012-08-19
申请人： Tomoaki Uno , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa
发明人： Tomoaki Uno , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa
IPC分类号： H01L27/088 , H01L23/495 , H01L25/16 , H02M1/32 , H02M3/156 , H01L21/8234 , H01L23/00 , H01L25/07 , H02M1/00
CPC分类号： H01L27/088 , H01L21/823487 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/37 , H01L24/40 , H01L24/73 , H01L25/074 , H01L25/16 , H01L2224/05554 , H01L2224/0603 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/3754 , H01L2224/40095 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73221 , H01L2224/73265 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H02M1/32 , H02M3/156 , H02M2001/0009 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： A semiconductor device is improved in reliability. A power MOSFET for switching, and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion, and sealed in a resin. To first and second source pads for outputting the current flowing in the power MOSFET, a metal plate is bonded. A third source pad for sensing the source voltage of the power MOSFET is at a position not overlapping the metal plate. A coupled portion between a source wire forming the third pad and another source wire forming the first and second pads is at a position overlapping the metal plate.
摘要翻译：提高了半导体器件的可靠性。在一个半导体芯片中形成用于切换的功率MOSFET和用于感测功率MOSFET中流过的电流的感测MOSFET，该功率MOSFET的面积小于功率MOSFET。半导体芯片安装在芯片安装部分上，并密封在树脂中。对于用于输出在功率MOSFET中流动的电流的第一和第二源极焊盘，金属板被接合。用于感测功率MOSFET的源极电压的第三源极焊盘位于与金属板不重叠的位置。形成第三焊盘的源极线和形成第一和第二焊盘的另一源极之间的耦合部分处于与金属板重叠的位置。

64. 发明授权

US08680830B2 Power supply device 有权
标题翻译：电源设备
公开(公告)号：US08680830B2
公开(公告)日：2014-03-25
申请号：US13229781
申请日：2011-09-12
申请人： Ryotaro Kudo , Tomoaki Uno , Koji Tateno , Hideo Ishii , Kazuyuki Umezu , Koji Saikusa
发明人： Ryotaro Kudo , Tomoaki Uno , Koji Tateno , Hideo Ishii , Kazuyuki Umezu , Koji Saikusa
IPC分类号： G05F1/00
CPC分类号： H02M3/158 , G06F1/26 , H02M3/1584 , H02M2003/1586
摘要： Miniaturization of a multiphase type power supply device can be achieved. A power supply control unit in which, for example, a microcontroller unit, a memory unit and an analog controller unit are formed over a single chip, a plurality of PWM-equipped drive units, and a plurality of inductors configure a multiphase power supply. The microcontroller unit outputs clock signals each having a frequency and a phase defined based on a program on the memory unit to the respective PWM-equipped drive units. The analog controller unit detects a difference between a voltage value of a load and a target voltage value acquired via a serial interface and outputs an error amp signal therefrom. Each of the PWM-equipped drive units drives each inductor by a peak current control system using the clock signal and the error amp signal.
摘要翻译：可以实现多相电源装置的小型化。电源控制单元，其中例如在单个芯片上形成微控制器单元，存储单元和模拟控制器单元，多个配备PWM的驱动单元和多个电感器构成多相电源。微控制器单元输出每个具有基于存储器单元上的程序定义的频率和相位到相应的配备有PWM的驱动单元的时钟信号。模拟控制器单元检测负载的电压值与通过串行接口获取的目标电压值之间的差值，并输出误差放大器信号。每个配备PWM的驱动单元通过使用时钟信号和误差放大器信号的峰值电流控制系统驱动每个电感器。

65. 发明申请

US20060239321A1 Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20060239321A1
公开(公告)日：2006-10-26
申请号：US11327405
申请日：2006-01-09
申请人： Masahiro Kume , Toshitaka Shimamoto , Isao Kidoguchi , Tomoaki Uno
发明人： Masahiro Kume , Toshitaka Shimamoto , Isao Kidoguchi , Tomoaki Uno
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , B82Y20/00 , G11B7/1275 , G11B2007/0006 , H01S5/028 , H01S5/0287 , H01S5/162 , H01S5/2214 , H01S5/2231 , H01S5/34313 , H01S5/34326 , H01S5/3436 , H01S5/4087
摘要： A semiconductor laser device includes a first semiconductor laser element for emitting a first laser light having a first oscillation wavelength of λ1 and a second semiconductor laser element for emitting a second laser light having a second oscillation wavelength of λ2 (wherein λ2≧λ1), which are formed on a single substrate. A first dielectric film which has a refractive index of n1 with respect to a wavelength λ between the first oscillation wavelength λ1 and the second oscillation wavelength λ2 and has a film thickness of approximately λ/(8n1) is formed at light emitting facets in the first semiconductor laser element and the second semiconductor laser element, from which the laser lights are emitted, and a second dielectric film having a refractive index of n2 and a film thickness of λ/(8n2) are formed on the first dielectric film.
摘要翻译：半导体激光器件包括用于发射具有第一振荡波长λ1的第一激光的第一半导体激光元件和用于发射具有第二振荡波长λ的第二激光元件的第二半导体激光元件其中形成在单个衬底上的第二层（其中λ2

66. 发明授权

US06984864B2 Semiconductor device with MISFET having low leakage current 有权
标题翻译：具有低泄漏电流的MISFET的半导体器件
公开(公告)号：US06984864B2
公开(公告)日：2006-01-10
申请号：US10463771
申请日：2003-06-18
申请人： Tomoaki Uno , Yoshito Nakazawa
发明人： Tomoaki Uno , Yoshito Nakazawa
IPC分类号： H01L29/78
CPC分类号： H01L29/66727 , H01L23/50 , H01L29/41766 , H01L29/456 , H01L29/66734 , H01L29/7802 , H01L29/7813 , H01L29/7839 , H01L2924/0002 , H01L2924/00
摘要： In an n-channel type power MISFET, a source electrode in contact with an n+-semiconductor region (source region) and a p+-semiconductor region (back gate contact region) is constituted with an Al film and an underlying barrier film comprised of MoSi2, use of the material having higher barrier height relation to n-Si for the barrier film increasing the contact resistance to n-Si and backwardly biasing the emitter and base of a parasitic bipolar transistor making it less tending to turn-on, thereby decreasing the leak current of power MISFET.
摘要翻译：在n沟道型功率MISFET中，与n + / - 半导体区域（源极区域）和ap + + - 半导体区域（背栅极接触区域）由Al膜和由MoSi 2 N构成的下面的阻挡膜构成，使用与n-Si相比具有更高的势垒高度的材料用于阻挡膜增加与n-Si的接触电阻，以及向后偏置寄生双极晶体管的发射极和基极，使其不易于接通，从而减小功率MISFET的漏电流。

67. 发明授权

US06590915B1 Optical apparatus and method for producing the same 失效
公开(公告)号：US06590915B1
公开(公告)日：2003-07-08
申请号：US09612091
申请日：2000-07-07
申请人： Yasuo Kitaoka , Kazuhisa Yamamoto , Makoto Kato , Tomoaki Uno , Kiminori Mizuuchi , Kenichi Nishiuchi
发明人： Yasuo Kitaoka , Kazuhisa Yamamoto , Makoto Kato , Tomoaki Uno , Kiminori Mizuuchi , Kenichi Nishiuchi
IPC分类号： H01S300
CPC分类号： H01S5/0687 , G02B6/42 , G02B6/4201 , G02B6/4213 , G02B6/4215 , G02B6/4224 , G02B6/4257 , G02B6/4271 , G02B6/4272 , G02F1/37 , H01S5/0092 , H01S5/02252 , H01S5/02476 , H01S5/0612 , H01S5/06256 , H01S5/06837
摘要： A light generating apparatus includes: a submount; a semiconductor laser chip mounted on the submount; a substrate which is mounted on the submount and includes an optical waveguide; and a substance having a predetermined thickness which is disposed between the semiconductor laser chip and the substrate. In an oscillation wavelength stabilizing apparatus for a light source, the light source is a semiconductor laser which includes: an active region for providing gain; and a distributed Bragg reflection (DBR) region for controlling an oscillation wavelength. The apparatus includes a control section which monotonously varies, in a first direction, a DBR current to be input to the DBR region while detecting the oscillation wavelength of an output light of the semiconductor laser so as to detect a DBR current value Io corresponding to a predetermined wavelength value, and then monotonously varies the DBR current in a second direction which is opposite the first direction beyond the detected value Io, and then monotonously varies the DBR current in the first direction again to set the DBR current at the detected value Io, thereby fixing the oscillation wavelength of the semiconductor laser chip at the predetermined wavelength value.

68. 发明授权

US6069904A Optical apparatus and method for producing the same 失效
标题翻译：光学装置及其制造方法
公开(公告)号：US6069904A
公开(公告)日：2000-05-30
申请号：US910097
申请日：1997-08-12
申请人： Yasuo Kitaoka , Kazuhisa Yamamoto , Makoto Kato , Tomoaki Uno , Kiminori Mizuuchi , Kenichi Nishiuchi
发明人： Yasuo Kitaoka , Kazuhisa Yamamoto , Makoto Kato , Tomoaki Uno , Kiminori Mizuuchi , Kenichi Nishiuchi
IPC分类号： G02B6/42 , G02F1/37 , H01S5/022 , H01S5/06 , H01S5/0625 , H01S5/0683 , H01S5/0687 , H01S3/13 , H01S3/00 , H01S3/08
CPC分类号： H01S5/0687 , G02B6/42 , G02B6/4201 , G02B6/4257 , G02B6/4272 , H01S5/06256 , G02B6/4213 , G02B6/4215 , G02B6/4224 , G02B6/4271 , G02F1/37 , H01S5/0092 , H01S5/02252 , H01S5/02476 , H01S5/0612 , H01S5/06837
摘要： A light generating apparatus includes: a submount; a semiconductor laser chip mounted on the submount; a substrate which is mounted on the submount and includes an optical waveguide; and a substance having a predetermined thickness which is disposed between the semiconductor laser chip and the substrate. In an oscillation wavelength stabilizing apparatus for a light source, the light source is a semiconductor laser which includes: an active region for providing gain; and a distributed Bragg reflection (DBR) region for controlling an oscillation wavelength. The apparatus includes a control section which monotonously varies, in a first direction, a DBR current to be input to the DBR region while detecting the oscillation wavelength of an output light of the semiconductor laser so as to detect a DBR current value I.sub.0 corresponding to a predetermined wavelength value, and then monotonously varies the DBR current in a second direction which is opposite the first direction beyond the detected value I.sub.0, and then monotonously varies the DBR current in the first direction again to set the DBR current at the detected value I.sub.0, thereby fixing the oscillation wavelength of the semiconductor laser chip at the predetermined wavelength value.
摘要翻译：一种发光装置，包括：底座; 安装在底座上的半导体激光芯片; 基板，其安装在所述基座上并且包括光波导; 以及设置在半导体激光芯片和基板之间的具有预定厚度的物质。在用于光源的振荡波长稳定装置中，光源是半导体激光器，其包括：用于提供增益的有源区; 以及用于控制振荡波长的分布式布拉格反射（DBR）区域。该装置包括控制部分，其在检测半导体激光器的输出光的振荡波长的同时，在第一方向上单向变化要输入到DBR区域的DBR电流，以便检测对应于该半导体激光器的DBR电流值I0 预定波长值，然后在与第一方向相反的第二方向上将DBR电流单调变化超过检测值I0，然后再次将DBR电流在第一方向上单调变化，以将DBR电流设定在检测值I0，从而将半导体激光器芯片的振荡波长固定在预定波长值。

69. 发明授权

US6067393A Optical apparatus and method for producing the same 有权
标题翻译：光学装置及其制造方法
公开(公告)号：US6067393A
公开(公告)日：2000-05-23
申请号：US137631
申请日：1998-08-21
申请人： Yasuo Kitaoka , Kazuhisa Yamamoto , Makoto Kato , Tomoaki Uno , Kiminori Mizuuchi , Kenichi Nishiuchi
发明人： Yasuo Kitaoka , Kazuhisa Yamamoto , Makoto Kato , Tomoaki Uno , Kiminori Mizuuchi , Kenichi Nishiuchi
IPC分类号： G02B6/42 , G02F1/37 , H01S5/022 , H01S5/06 , H01S5/0625 , H01S5/0683 , H01S5/0687 , G02B6/36
CPC分类号： H01S5/0687 , G02B6/42 , G02B6/4201 , G02B6/4257 , G02B6/4272 , H01S5/06256 , G02B6/4213 , G02B6/4215 , G02B6/4224 , G02B6/4271 , G02F1/37 , H01S5/0092 , H01S5/02252 , H01S5/02476 , H01S5/0612 , H01S5/06837
摘要： A light generating apparatus includes: a submount; a semiconductor laser chip mounted on the surmount; a substrate which is mounted on the submount and includes an optical waveguide; and a substance having a predetermined thickness which is disposed between the semiconductor laser chip and the substrate. In an oscillation wavelength stabilizing apparatus for a light source, the light source is a semiconductor laser which includes: an active region for providing gain; and a distributed Bragg reflection (DBR) region for controlling an oscillation wavelength. The apparatus includes a control section which monotonously varies, in a first direction, a DBR current to be input to the DBR region while detecting the oscillation wavelength of an output light of the semiconductor laser so as to detect a DBR current value I.sub.0 corresponding to a predetermined wavelength value, and then monotonously varies the DBR current in a second direction which is opposite the first direction beyond the detected value I.sub.0, and then monotonously varies the DBR current in the first direction again to set the DBR current at the detected value I.sub.0, thereby fixing the oscillation wavelength of the semiconductor laser chip at the predetermined wavelength value.
摘要翻译：一种发光装置，包括：底座; 半导体激光芯片安装在超越上; 基板，其安装在所述基座上并且包括光波导; 以及设置在半导体激光芯片和基板之间的具有预定厚度的物质。在用于光源的振荡波长稳定装置中，光源是半导体激光器，其包括：用于提供增益的有源区; 以及用于控制振荡波长的分布式布拉格反射（DBR）区域。该装置包括控制部分，其在检测半导体激光器的输出光的振荡波长的同时，在第一方向上单向变化要输入到DBR区域的DBR电流，以便检测对应于该半导体激光器的DBR电流值I0 预定波长值，然后在与第一方向相反的第二方向上将DBR电流单调变化超过检测值I0，然后再次将DBR电流在第一方向上单调变化，以将DBR电流设定在检测值I0，从而将半导体激光器芯片的振荡波长固定在预定波长值。

70. 发明申请

US20060043495A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060043495A1
公开(公告)日：2006-03-02
申请号：US11250392
申请日：2005-10-17
申请人： Tomoaki Uno , Yoshito Nakazawa
发明人： Tomoaki Uno , Yoshito Nakazawa
IPC分类号： H01L29/76
CPC分类号： H01L29/66727 , H01L23/50 , H01L29/41766 , H01L29/456 , H01L29/66734 , H01L29/7802 , H01L29/7813 , H01L29/7839 , H01L2924/0002 , H01L2924/00
摘要： In an n-channel type power MISFET, a source electrode in contact with an n+-semiconductor region (source region) and a p+-semiconductor region (back gate contact region) is constituted with an Al film and an underlying barrier film comprised of MoSi2, use of the material having higher barrier height relation to n-Si for the barrier film increasing the contact resistance to n-Si and backwardly biasing the emitter and base of a parasitic bipolar transistor making it less tending to turn-on, thereby decreasing the leak current of power MISFET.
摘要翻译：在n沟道型功率MISFET中，与n + / - 半导体区域（源极区域）和ap + + - 半导体区域（背栅极接触区域）由Al膜和由MoSi 2 N构成的下面的阻挡膜构成，使用与n-Si相比具有更高的势垒高度的材料用于阻挡膜增加与n-Si的接触电阻，以及向后偏置寄生双极晶体管的发射极和基极，使其不易于接通，从而减小功率MISFET的漏电流。

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