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1. 发明授权

US4755015A Monolithic integrated semiconductor device of semiconductor laser and optical waveguide 失效
标题翻译：半导体激光和光波导的半导体集成半导体器件
公开(公告)号：US4755015A
公开(公告)日：1988-07-05
申请号：US884621
申请日：1986-07-11
申请人： Tomoaki Uno , Mototsugu Ogura
发明人： Tomoaki Uno , Mototsugu Ogura
IPC分类号： H01S5/00 , H01S5/026 , H01S5/10 , H01S5/12 , H01S5/125 , H01S5/20 , H01S5/343 , G02B6/10
CPC分类号： B82Y20/00 , H01S5/026 , H01S5/125 , H01S5/10 , H01S5/12 , H01S5/2059 , H01S5/34306 , H01S5/3434
摘要： A semiconductor device which includes a semiconductor substrate, an active layer in a quantum well structure disposed on said semiconductor substrate, an optical waveguide formed by a disordering part of said active layer, and a clad layer disposed on said active layer and optical waveguide. As a result of this structure, the coupling efficiency of the active layer and optical waveguide is extremely enhanced, and a high performance semiconductor device is obtained.
摘要翻译：一种半导体器件，包括半导体衬底，设置在所述半导体衬底上的量子阱结构中的有源层，由所述有源层的无序部分形成的光波导以及设置在所述有源层和光波导上的覆层。作为这种结构的结果，有源层和光波导的耦合效率极大地提高，并且获得了高性能的半导体器件。

2. 发明授权

US5099357A Optical sensor 失效
标题翻译：光学传感器
公开(公告)号：US5099357A
公开(公告)日：1992-03-24
申请号：US700891
申请日：1991-05-10
申请人： Toshiya Yokogawa , Mototsugu Ogura
发明人： Toshiya Yokogawa , Mototsugu Ogura
IPC分类号： G01R33/032 , G01R15/24 , G01R19/00 , G02F1/017 , G02F1/09 , G02F1/095
CPC分类号： B82Y20/00 , G01R15/245 , G01R15/247 , G02F1/095 , G02F1/01708 , G02F2202/107
摘要： An optical sensor excellent in reliability and mass producibility and low in cost, by forming a magnetic optical crystal, polarizer and analyzer monolithically on the same substrate.
摘要翻译：通过在同一基板上单片地形成磁光学晶体，偏振片和分析仪，可靠性和批量生产率高，成本低的光学传感器。

3. 发明授权

US5143863A Method of manufacturing semiconductor laser 失效
标题翻译：制造半导体激光器的方法
公开(公告)号：US5143863A
公开(公告)日：1992-09-01
申请号：US683181
申请日：1991-04-09
申请人： Kiyoshi Ohnaka , Mototsugu Ogura
发明人： Kiyoshi Ohnaka , Mototsugu Ogura
IPC分类号： H01S5/22 , H01S5/223 , H01S5/227 , H01S5/323
CPC分类号： H01S5/227 , H01S5/2231 , H01S5/2205 , H01S5/2209 , H01S5/221 , H01S5/2211 , H01S5/2214 , H01S5/2216 , H01S5/2275 , H01S5/32325
摘要： According to the structure of the invention, an AlGaInP cladding layer of one conductive type, an active layer, and an AlGaInP cladding layer of other conductive type greater in thickness in stripes are formed on a GaAs substrate, and an insulating film, AlGaInP or amorphous layer smaller in refractive index than the AlGaInP cladding layer are formed at both sides of the stripes, wherein the light can be confined and guided also in the direction parallel to the active layer, and the light can be index-guided both in the direction parallel to the active layer and in the direction vertical thereto, so that a laser having an extremely smaller astigmatism may be presented. What is more, the current blocking layer disposed at the outer side of the insulating film, AlGaInP or amorphous layer is high in thermal conductivity, and the heat generated in the vicinity of the active layer may be efficiently released.The invention also relates to the method of fabricating the laser composed in such structure.
摘要翻译：根据本发明的结构，在GaAs衬底上形成厚度较大的一种导电类型，有源层和其它导电类型的AlGaInP包层的AlGaInP包层，并且将绝缘膜AlGaInP或非晶在条纹的两侧形成折射率比AlGaInP包覆层小的层，其中光可以在与有源层平行的方向上被限制和引导，并且光可以沿着平行的方向被引导引导到有源层和垂直于其的方向，使得可以呈现具有非常小的散光的激光。此外，设置在绝缘膜的外侧的电流阻挡层AlGaInP或非晶层的导热性高，并且可以有效地释放在活性层附近产生的热量。本发明还涉及以这种结构构成的激光器的制造方法。

4. 发明授权

US5092937A Process for treating semiconductors 失效
标题翻译：半导体处理方法
公开(公告)号：US5092937A
公开(公告)日：1992-03-03
申请号：US552112
申请日：1990-07-13
申请人： Mototsugu Ogura , Keiichi Kagawa , Yuichi Hirofuji
发明人： Mototsugu Ogura , Keiichi Kagawa , Yuichi Hirofuji
IPC分类号： H01L21/304 , H01L21/00
CPC分类号： H01L21/67028
摘要： Semiconductors are treated with such surface-treating solutions as ultra-pure water, dilute hydrofluoric acid and an organic solvent and then subjected to removal of the surface-treating solutions remaining on the surface of the semiconductor in an inert gas atmosphere of high purity while contacting the surface of the surface-treated semiconductor only with the inert gas of high purity, whereby contamination with impurities on atom level from the atmosphere can be prevented.
摘要翻译：半导体用诸如超纯水，稀氢氟酸和有机溶剂的表面处理溶液处理，然后在高纯度的惰性气体气氛中除去保留在半导体表面上的表面处理溶液，同时接触表面处理的半导体的表面仅具有高纯度的惰性气体，从而可以防止来自大气的原子级杂质的污染。

5. 发明授权

US4843031A Method of fabricating compound semiconductor laser using selective irradiation 失效
标题翻译：使用选择性照射制造化合物半导体激光的方法
公开(公告)号：US4843031A
公开(公告)日：1989-06-27
申请号：US168256
申请日：1988-03-15
申请人： Yuzaburo Ban , Hiraaki Tsujii , Youichi Sasai , Mototsugu Ogura , Hiroyuki Serizawa
发明人： Yuzaburo Ban , Hiraaki Tsujii , Youichi Sasai , Mototsugu Ogura , Hiroyuki Serizawa
IPC分类号： H01L33/00 , H01S5/20 , H01S5/40
CPC分类号： H01S5/4031 , H01L33/0062 , H01S5/20 , H01S5/2059 , H01S5/4087 , Y10S148/029 , Y10S148/048 , Y10S148/071 , Y10S148/094 , Y10S438/925 , Y10S438/956
摘要： Disclosed is a method of fabricating a compound semiconductor device which is capable of forming a multi-wavelength semiconductor laser structure, double cavity type semiconductor laser structure, stripe type semiconductor laser structure transverse junction stripe type semiconductor laser structure, or semiconductor grating by a single step of epitaxial growth while illuminating a desired part of substrate surface selectively with light at the time of epitaxial growth.
摘要翻译：公开了一种制造能够通过单步形成多波长半导体激光器结构，双腔型半导体激光器结构，条形半导体激光器结构横向连接条型半导体激光器结构或半导体光栅的化合物半导体器件的方法的外延生长，同时在外延生长时用光选择性地照射所需部分的衬底表面。

6. 发明授权

US4747110A Semiconductor laser device capable of emitting laser beams of different wavelengths 失效
标题翻译：能够发射不同波长的激光束的半导体激光器件
公开(公告)号：US4747110A
公开(公告)日：1988-05-24
申请号：US829090
申请日：1986-02-13
申请人： Yasuhito Takahashi , Mototsugu Ogura , Nobuyasu Hase
发明人： Yasuhito Takahashi , Mototsugu Ogura , Nobuyasu Hase
IPC分类号： H01S5/223 , H01S5/32 , H01S5/34 , H01S5/40 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/4031 , H01S5/2238 , H01S5/3203 , H01S5/3413 , H01S5/4037 , H01S5/4087
摘要： A semiconductor laser device has a compound semiconductor substrate, a first semiconductor layer disposed on the compound semiconductor substrate, and a second semiconductor layer disposed on the first semiconductor layer. The second semiconductor layer has at least three thin film layers of at least two different semiconductor compounds, the film layers being laminated with the different semiconductor compound layers alternating. An electrically isolating region extends through the thickness of the second semiconductor layer and electrically divides the second semiconductor layer into first and second portions which differ in quantum level from each other. A third semiconductor layer is disposed on the second semiconductor layer, and first and second electrodes are disposed on the third semiconductor layer in positions for supplying current to the first and second portions, respectively, and a third electrode is disposed on the substrate at the surface thereof opposite to the first and second electrodes. When a voltage is applied between the third and first electrodes and the third and second electrodes, laser beams having different wavelengths are emitted from the first and second portions of the second semiconductor layer, respectively.
摘要翻译：半导体激光器件具有化合物半导体衬底，设置在化合物半导体衬底上的第一半导体层和设置在第一半导体层上的第二半导体层。第二半导体层具有至少三个至少两个不同半导体化合物的薄膜层，膜层与不同的半导体化合物层交替层叠。电绝缘区域延伸穿过第二半导体层的厚度，并且将第二半导体层电分离成彼此不同的量子水平的第一和第二部分。第三半导体层设置在第二半导体层上，并且第一和第二电极分别设置在第三半导体层上用于向第一和第二部分提供电流的位置，第三电极设置在基板上的表面其与第一和第二电极相对。当在第三和第一电极和第三和第二电极之间施加电压时，分别从第二半导体层的第一和第二部分发射具有不同波长的激光束。

7. 发明授权

US4885260A Method of laser enhanced vapor phase growth for compound semiconductor 失效
标题翻译：化合物半导体激光增强气相生长方法
公开(公告)号：US4885260A
公开(公告)日：1989-12-05
申请号：US156525
申请日：1988-02-16
申请人： Yuzaburo Ban , Masaya Manno , Minoru Kubo , Mototsugu Morisaki , Mototsugu Ogura
发明人： Yuzaburo Ban , Masaya Manno , Minoru Kubo , Mototsugu Morisaki , Mototsugu Ogura
IPC分类号： H01L21/20 , H01L21/205
CPC分类号： H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , Y10S117/904 , Y10S148/048 , Y10S148/065 , Y10S148/072 , Y10S148/094 , Y10S438/925 , Y10S438/936
摘要： Disclosed is a vapor phase growth method of compound semiconductor in which source gases are introduced into an epitaxial growth reactor at fixed feed rates, the substrate surface is irradiated with light, and the light irradiation is turned on and off, or the intensity of light irradiation is increased or decreased, so that an epitaxial layer structure changes in the composition, and the carrier concentration and conductivity type abruptly or continuously change in the growth film in the direction of the thickness.
摘要翻译：公开了一种化合物半导体的气相生长方法，其中源气体以固定的进料速率被引入外延生长反应器中，基板表面被光照射，并且光照射被打开和关闭，或者光照射强度增加或减少，使得外延层结构改变组成，并且载流子浓度和导电类型在生长膜中在厚度方向上突然或连续地变化。

8. 发明授权

US4866489A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4866489A
公开(公告)日：1989-09-12
申请号：US076549
申请日：1987-07-22
申请人： Toshiya Yokogawa , Mototsugu Ogura
发明人： Toshiya Yokogawa , Mototsugu Ogura
IPC分类号： G02F1/017 , G02F1/355 , G02F1/37 , H01L27/146 , H01S5/02 , H01S5/026 , H01S5/20 , H01S5/32 , H01S5/34 , H01S5/347
CPC分类号： B82Y20/00 , G02F1/3556 , H01L27/14665 , H01S5/026 , H01S5/347 , G02F1/37 , G02F2001/01766 , H01S2301/173 , H01S5/021 , H01S5/0218 , H01S5/2004 , H01S5/3201 , H01S5/3406 , H01S5/3409
摘要： A semiconductor device in which a strained-layer of super-lattice composed of two or more group II-IV semiconductors grown on an epitaxial growth layer formed on a surface of a semiconductor substrate. Since the strained-layer of super-lattice composed of two or more group II-VI semiconductors is present in the heterojunction of the heterostructure, it is possible to form a favorable heterostructure seminconductor layer, inhibiting the adverse effects of lattice mismatch.
摘要翻译：一种半导体器件，其中在形成在半导体衬底的表面上的外延生长层上生长的由两个或更多个II-IV族半导体组成的超晶格的应变层。由于由两个以上的II-VI族II族半导体构成的超晶格的应变层存在于异质结构的异质结中，因此可以形成有利的异质结晶半导体层，抑制晶格失配的不利影响。

9. 发明申请

US20110303146A1 PLASMA DOPING APPARATUS 审中-公开
标题翻译：等离子喷涂设备
公开(公告)号：US20110303146A1
公开(公告)日：2011-12-15
申请号：US13203681
申请日：2010-12-02
申请人： Osamu Nishijima , Yuichiro Sasaki , Masafumi Kubota , Mototsugu Ogura , Katsumi Okashita
发明人： Osamu Nishijima , Yuichiro Sasaki , Masafumi Kubota , Mototsugu Ogura , Katsumi Okashita
IPC分类号： C23C16/50 , B05C11/00
CPC分类号： H01J37/3244 , H01J37/32412 , H01J37/32513 , H01L21/2236
摘要： There is provided a regulating gas suction device, which forms a regulating gas flow for use in preventing air outside a vacuum container trying to invade into the vacuum container through a sealing member that tightly closes a gap between an upper end surface of the vacuum container and a peripheral edge of a top pate being opposed to each other from flowing toward a substrate at a coupling portion between the top plate and the vacuum container.
摘要翻译：提供了一种调节气体抽吸装置，其形成调节气体流动，其用于防止真空容器外面的空气试图通过密封构件侵入真空容器，该密封构件紧密地封闭真空容器的上端表面和在顶板和真空容器之间的联接部分处，顶板彼此相对的周边边缘朝向基板流动。

10. 发明授权

US5029175A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5029175A
公开(公告)日：1991-07-02
申请号：US437934
申请日：1989-11-17
申请人： Kiyoshi Ohnaka , Mototsugu Ogura
发明人： Kiyoshi Ohnaka , Mototsugu Ogura
IPC分类号： H01S5/22 , H01S5/223 , H01S5/227 , H01S5/323
CPC分类号： H01S5/227 , H01S5/2231 , H01S5/2205 , H01S5/2209 , H01S5/221 , H01S5/2211 , H01S5/2214 , H01S5/2216 , H01S5/2275 , H01S5/32325
摘要： In a semiconductor laser, an AlGaInP cladding layer of one conductive type, an active layer, and an AlGaInP cladding layer of other conductive type greater in thickness in stripes are formed on a GaAs substrate, and an insulating film, AlGaInP or amorphous layer smaller in refractive index than the AlGaInP cladding layer are formed at both sides of the stripes, wherein the light can be confined and guided also in the direction parallel to the active layer, and the light can be index-guided both in the direction parallel to the active layer and in the direction vertical thereto, so that a laser having an extremely smaller astigmatism may be presented. In addition, the current blocking layer disposed at the outer side of the insulating film, AlGaInP or amorphous layer is high in thermal conductivity, and the heat generated in the vicinity of the active layer may be efficiently released.
摘要翻译：在半导体激光器中，在GaAs衬底上形成厚度更大的导体类型，有源层和其它导电类型的AlGaInP包层的AlGaInP包覆层，并且在GaAs衬底上形成绝缘膜，AlGaInP或非晶层折射率比AlGaInP包层形成在条纹的两侧，其中光可以在平行于有源层的方向上被限制和引导，并且光可以在平行于活动的方向上被引导引导层并且在垂直于其的方向上，使得可以呈现具有非常小的散光的激光。此外，设置在绝缘膜的外侧的电流阻挡层AlGaInP或非晶层的导热性高，并且可以有效地释放在活性层附近产生的热量。

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