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1. 发明申请

US20060239321A1 Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：US20060239321A1
公开(公告)日：2006-10-26
申请号：US11327405
申请日：2006-01-09
申请人： Masahiro Kume , Toshitaka Shimamoto , Isao Kidoguchi , Tomoaki Uno
发明人： Masahiro Kume , Toshitaka Shimamoto , Isao Kidoguchi , Tomoaki Uno
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , B82Y20/00 , G11B7/1275 , G11B2007/0006 , H01S5/028 , H01S5/0287 , H01S5/162 , H01S5/2214 , H01S5/2231 , H01S5/34313 , H01S5/34326 , H01S5/3436 , H01S5/4087
摘要： A semiconductor laser device includes a first semiconductor laser element for emitting a first laser light having a first oscillation wavelength of λ1 and a second semiconductor laser element for emitting a second laser light having a second oscillation wavelength of λ2 (wherein λ2≧λ1), which are formed on a single substrate. A first dielectric film which has a refractive index of n1 with respect to a wavelength λ between the first oscillation wavelength λ1 and the second oscillation wavelength λ2 and has a film thickness of approximately λ/(8n1) is formed at light emitting facets in the first semiconductor laser element and the second semiconductor laser element, from which the laser lights are emitted, and a second dielectric film having a refractive index of n2 and a film thickness of λ/(8n2) are formed on the first dielectric film.
摘要翻译：半导体激光器件包括用于发射具有第一振荡波长λ1的第一激光的第一半导体激光元件和用于发射具有第二振荡波长λ的第二激光元件的第二半导体激光元件其中形成在单个衬底上的第二层（其中λ2

2. 发明授权

US08633550B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08633550B2
公开(公告)日：2014-01-21
申请号：US13531567
申请日：2012-06-24
申请人： Tomoaki Uno , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa , Katsuhiko Funatsu
发明人： Tomoaki Uno , Yoshitaka Onaya , Hirokazu Kato , Ryotaro Kudo , Koji Saikusa , Katsuhiko Funatsu
IPC分类号： H01L27/088
CPC分类号： H01L23/49575 , H01L23/3107 , H01L23/4824 , H01L23/49524 , H01L23/49562 , H01L24/37 , H01L24/40 , H01L24/73 , H01L2224/05554 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/40095 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/351 , H02M3/1588 , H02M2001/0009 , Y02B70/1466 , H01L2924/00012 , H01L2924/00 , H01L2924/00014
摘要： To improve reliability of a semiconductor deviceA power MOSFET for switching and a sense MOSFET having an area smaller than that of the power MOSFET and configured to detect an electric current flowing through the power MOSFET are formed within one semiconductor chip CPH and the semiconductor chip CPH is mounted over a chip mounting part via an electrically conductive joining material and sealed with a resin. In a main surface of the semiconductor chip CPH, a sense MOSFET region in which the sense MOSFET is formed is located more internally than a source pad PDHS4 of the sense MOSFET region RG2. Furthermore, in the main surface of the semiconductor chip, the sense MOSFET region RG2 is surrounded by a region in which the power MOSFET is formed.
摘要翻译：提高半导体器件的可靠性在一个半导体芯片CPH和半导体芯片CPH内形成用于开关的功率MOSFET和具有小于功率MOSFET的功率MOSFET并且被配置为检测流过功率MOSFET的电流的感测MOSFET 通过导电接合材料安装在芯片安装部分上并用树脂密封。在半导体芯片CPH的主表面中，形成感测MOSFET的感测MOSFET区域位于读出MOSFET区域RG2的源极焊盘PDHS4的内部。此外，在半导体芯片的主表面中，感测MOSFET区域RG2由形成功率MOSFET的区域包围。

3. 发明授权

US08159054B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08159054B2
公开(公告)日：2012-04-17
申请号：US13188613
申请日：2011-07-22
申请人： Yukihiro Satou , Tomoaki Uno , Nobuyoshi Matsuura , Masaki Shiraishi
发明人： Yukihiro Satou , Tomoaki Uno , Nobuyoshi Matsuura , Masaki Shiraishi
IPC分类号： H01L23/495
CPC分类号： H01L23/5386 , H01L23/49575 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L29/4175 , H01L2224/05554 , H01L2224/0603 , H01L2224/29339 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/4943 , H01L2224/83855 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , H05K7/02 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/2075 , H01L2924/20754
摘要： The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOSωFET for a high side switch and a power MOSωFET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.
摘要翻译：本发明提供一种具有电路的非绝缘型DC-DC转换器，其中用于高侧开关的功率MOSωFET和用于低侧开关的功率MOSωFET串联连接。在非绝缘型DC-DC转换器中，用于高侧开关的功率晶体管，低边开关的功率晶体管和驱动它们的驱动电路分别由不同的半导体芯片构成。三个半导体芯片被容纳在一个封装中，并且包括用于高侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被布置成彼此接近。

4. 发明授权

US08013430B2 Semiconductor device including DC-DC converter 有权
标题翻译：包括DC-DC转换器的半导体器件
公开(公告)号：US08013430B2
公开(公告)日：2011-09-06
申请号：US12708044
申请日：2010-02-18
申请人： Yukihiro Satou , Tomoaki Uno , Nobuyoshi Matsuura , Masaki Shiraishi
发明人： Yukihiro Satou , Tomoaki Uno , Nobuyoshi Matsuura , Masaki Shiraishi
IPC分类号： H01L23/495
CPC分类号： H01L23/5386 , H01L23/49575 , H01L23/50 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/165 , H01L29/4175 , H01L2224/05554 , H01L2224/0603 , H01L2224/29339 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/4943 , H01L2224/83855 , H01L2224/85 , H01L2224/85203 , H01L2224/85205 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/20753 , H01L2924/20755 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , H05K7/02 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/2075 , H01L2924/20754
摘要： The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS·FET for a high side switch and a power MOS·FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.
摘要翻译：本发明提供一种非绝缘型DC-DC转换器，其具有用于高侧开关的功率MOS·FET和低侧开关的功率MOS·FET串联连接的电路。在非绝缘型DC-DC转换器中，用于高侧开关的功率晶体管，低边开关的功率晶体管和驱动它们的驱动电路分别由不同的半导体芯片构成。三个半导体芯片被容纳在一个封装中，并且包括用于高侧开关的功率晶体管的半导体芯片和包括驱动电路的半导体芯片被布置成彼此接近。

5. 发明申请

US20100059875A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100059875A1
公开(公告)日：2010-03-11
申请号：US12480112
申请日：2009-06-08
申请人： Yukihiro Sato , Tomoaki Uno
发明人： Yukihiro Sato , Tomoaki Uno
IPC分类号： H01L23/50
CPC分类号： H01L23/492 , H01L23/3107 , H01L23/4952 , H01L23/49524 , H01L23/49548 , H01L23/49575 , H01L23/49582 , H01L24/05 , H01L24/33 , H01L24/34 , H01L24/36 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/84 , H01L24/91 , H01L2224/04042 , H01L2224/05073 , H01L2224/05553 , H01L2224/05554 , H01L2224/05644 , H01L2224/29111 , H01L2224/2919 , H01L2224/32014 , H01L2224/32245 , H01L2224/37011 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/37599 , H01L2224/4007 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45015 , H01L2224/45144 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/4847 , H01L2224/48639 , H01L2224/48644 , H01L2224/49111 , H01L2224/49112 , H01L2224/49113 , H01L2224/49171 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/83801 , H01L2224/84801 , H01L2224/85439 , H01L2224/92 , H01L2224/92247 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0134 , H01L2924/014 , H01L2924/0665 , H01L2924/12044 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/1433 , H01L2924/15747 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/351 , H02M7/003 , H01L2924/00014 , H01L2224/83 , H01L2224/84 , H01L2924/00 , H01L2924/00012
摘要： The reliability of a semiconductor device is improved.A package of a semiconductor device internally includes a first semiconductor chip and a second semiconductor chip in which power MOS•FETs are formed and a third semiconductor chip in which a control circuit controlling the first and second semiconductor chips is formed. The first to third semiconductor chips are mounted on die pads respectively. Source electrode bonding pads of the first semiconductor chip on a high side are electrically connected with a first die pad of the die pads via a metal plate. On a top surface of the die pad 7D2, a plated layer formed in a region where the second semiconductor chip is mounted, and another plated layer formed in a region where the metal plate is joined are provided and the plated layers are separated each other with a region where no plated layer is formed in between.
摘要翻译：提高了半导体器件的可靠性。半导体器件的封装在内部包括形成功率MOS•FET的第一半导体芯片和第二半导体芯片，以及形成控制第一和第二半导体芯片的控制电路的第三半导体芯片。第一至第三半导体芯片分别安装在芯片焊盘上。第一半导体芯片的高侧的源电极接合焊盘通过金属板与管芯焊盘的第一管芯焊盘电连接。在芯片焊盘7D2的顶面设置有形成在安装有第二半导体芯片的区域中的镀层和形成在金属板接合的区域中的另一个镀层，并且将镀层彼此分离，并且用在其间不形成镀层的区域。

6. 发明授权

US07358143B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07358143B2
公开(公告)日：2008-04-15
申请号：US11250392
申请日：2005-10-17
申请人： Tomoaki Uno , Yoshito Nakazawa
发明人： Tomoaki Uno , Yoshito Nakazawa
IPC分类号： H01L21/336
CPC分类号： H01L29/66727 , H01L23/50 , H01L29/41766 , H01L29/456 , H01L29/66734 , H01L29/7802 , H01L29/7813 , H01L29/7839 , H01L2924/0002 , H01L2924/00
摘要： In an n-channel type power MISFET, a source electrode in contact with an n+-semiconductor region (source region) and a p+-semiconductor region (back gate contact region) is constituted with an Al film and an underlying barrier film comprised of MoSi2, use of the material having higher barrier height relation to n-Si for the barrier film increasing the contact resistance to n-Si and backwardly biasing the emitter and base of a parasitic bipolar transistor making it less tending to turn-on, thereby decreasing the leak current of power MISFET.
摘要翻译：在n沟道型功率MISFET中，与n + / - 半导体区域（源极区域）和ap + + - 半导体区域（背栅极接触区域）由Al膜和由MoSi 2 N构成的下面的阻挡膜构成，使用与n-Si相比具有更高的势垒高度的材料用于阻挡膜增加与n-Si的接触电阻，以及向后偏置寄生双极晶体管的发射极和基极，使其不易于接通，从而减小功率MISFET的漏电流。

7. 发明授权

US06264377B1 Bidirectional optical semiconductor apparatus 失效
标题翻译：双向光半导体装置
公开(公告)号：US06264377B1
公开(公告)日：2001-07-24
申请号：US09261960
申请日：1999-03-03
申请人： Masahiro Mitsuda , Tohru Nishikawa , Tomoaki Uno
发明人： Masahiro Mitsuda , Tohru Nishikawa , Tomoaki Uno
IPC分类号： G02B636
CPC分类号： G02B6/4246
摘要： EA bidirectional optical semiconductor apparatus of the present invention includes: a substrate embedding an optical waveguide, through which output light and input light are propagated; a semiconductor light-emitting device for emitting the output light toward one end of the optical waveguide; an optical branching filter, provided in the optical waveguide, for transmitting at least part of the output light and guiding at least part of the input light to the outside of the optical waveguide; a semiconductor light-receiving device, provided over the substrate, for receiving the input light guided by the optical branching filter to the outside of the optical waveguide; and a light-blocking member, formed on the surface of the semiconductor light-receiving device, for blocking the light emitted from the semiconductor light-emitting device.
摘要翻译：本发明的EA双向光学半导体装置包括：嵌入光波导的基板，输出光和输入光通过该光波导传播; 用于向所述光波导的一端发射所述输出光的半导体发光装置; 设置在光波导中的光分路滤波器，用于传输至少部分输出光并将至少部分输入光引导到光波导的外部; 半导体光接收装置，设置在所述基板上，用于将由所述光分路滤波器引导的输入光接收到所述光波导的外部; 以及形成在半导体光接收装置的表面上的用于阻挡从半导体发光器件发射的光的遮光部件。

8. 发明授权

US5978535A Semiconductor laser module, optical fiber amplifier and optical transfer system 失效
标题翻译：半导体激光模块，光纤放大器和光传输系统
公开(公告)号：US5978535A
公开(公告)日：1999-11-02
申请号：US39379
申请日：1998-03-16
申请人： Masahiro Mitsuda , Souichi Kimura , Tomoaki Uno
发明人： Masahiro Mitsuda , Souichi Kimura , Tomoaki Uno
IPC分类号： G02B6/32 , G02B6/26 , G02B6/42 , G02B27/28 , G02F1/09 , H01S3/00 , H01S3/06 , H01S3/10 , H01S5/00 , H01S5/022 , H01S5/026 , G02B6/36 , H01S3/091
CPC分类号： G02B6/4208 , H01S5/02252 , G02B6/2746 , G02B6/4213 , G02B6/424 , G02B6/4271 , G02B6/4286 , G02F1/093 , H01S5/0064 , H01S5/0224 , H01S5/02284 , H01S5/0683 , Y10S372/703
摘要： An active layer of a semiconductor laser element held by a laser mount is formed to be closer to the bottom than to the center of the height of the semiconductor laser element. A laser beam emitted from the active layer passes through a collective lens and an optical isolator and enters an incidence portion of an optical fiber. Returning light reflected by the incidence portion of the optical fiber passes through the optical isolator and the collective lens and is collected onto an end face of the laser mount. The optical isolator includes first and second rutiles which transmit normal light with refraction and abnormal light without refraction, a Faraday element which rotates a polarization plane of transmitted light in the clockwise direction by 45 degrees, and a permanent magnet for applying a magnetic field to the Faraday element.
摘要翻译：由激光器座保持的半导体激光元件的有源层形成为比半导体激光元件的高度的中心更靠近底部。从有源层发射的激光束通过集体透镜和光隔离器并进入光纤的入射部分。由光纤的入射部反射的返回光通过光隔离器和集体透镜，并被收集在激光座的端面上。光隔离器包括第一和第二红宝石，其透射具有折射的正常光和不具有折射的异常光;将透射光的偏振面沿顺时针方向旋转45度的法拉第元件和用于向法拉第元素。

9. 发明授权

US5914808A Intermediate isolator type fiber amplifier and fiber transmission system 失效
标题翻译：中间隔离器型光纤放大器和光纤传输系统
公开(公告)号：US5914808A
公开(公告)日：1999-06-22
申请号：US701987
申请日：1996-08-23
申请人： Masahiro Mitsuda , Jun Ohya , Tomoaki Uno
发明人： Masahiro Mitsuda , Jun Ohya , Tomoaki Uno
IPC分类号： G02F1/35 , H01S3/06 , H01S3/067 , H01S3/10 , H01S3/00
CPC分类号： H01S3/06758
摘要： The fiber amplifier of this invention includes: a first rare earth element doped fiber; a second rare earth element doped fiber; and a pump light source for generating pump light for exciting the first rare earth element doped fiber and the second rare earth element doped fiber, the fiber amplifier receiving analog signal light and amplifying the analog signal light, wherein the fiber amplifier further includes a directional transmitter disposed between the first rare earth element doped fiber and the second rare earth element doped fiber, and a transmittance of the directional transmitter for at least light having the same wavelength as the signal light propagating from the first rare earth element doped fiber to the second rare earth element doped fiber is larger than a transmittance of the directional transmitter for the light propagating from the second rare earth element doped fiber to the first rare earth element doped fiber.
摘要翻译：本发明的光纤放大器包括：第一稀土元素掺杂光纤; 第二稀土元素掺杂光纤; 以及泵浦光源，用于产生用于激发第一稀土元素掺杂光纤和第二稀土元素掺杂光纤的泵浦光，所述光纤放大器接收模拟信号光并放大模拟信号光，其中光纤放大器还包括定向发射器设置在第一稀土元素掺杂光纤和第二稀土元素掺杂光纤之间，并且定向发射器的透射率至少为与从第一稀土元素掺杂光纤传播到第二稀土元素掺杂光纤的信号光具有相同波长的光对于从第二稀土元素掺杂光纤向第一稀土元素掺杂光纤传播的光，定向发送器的透射率大于地球元素掺杂光纤。

10. 发明授权

US5835650A Optical apparatus and method for producing the same 失效
公开(公告)号：US5835650A
公开(公告)日：1998-11-10
申请号：US746718
申请日：1996-11-15
申请人： Yasuo Kitaoka , Kazuhisa Yamamoto , Makoto Kato , Tomoaki Uno , Kiminori Mizuuchi , Kenichi Nishiuchi
发明人： Yasuo Kitaoka , Kazuhisa Yamamoto , Makoto Kato , Tomoaki Uno , Kiminori Mizuuchi , Kenichi Nishiuchi
IPC分类号： G02B6/42 , G02F1/37 , H01S5/022 , H01S5/06 , H01S5/0625 , H01S5/0683 , H01S5/0687 , G02B6/36
CPC分类号： H01S5/0687 , G02B6/42 , G02B6/4201 , G02B6/4257 , G02B6/4272 , H01S5/06256 , G02B6/4213 , G02B6/4215 , G02B6/4224 , G02B6/4271 , G02F1/37 , H01S5/0092 , H01S5/02252 , H01S5/02476 , H01S5/0612 , H01S5/06837
摘要： A light generating apparatus includes: a submount; a semiconductor laser chip mounted on the submount; a substrate which is mounted on the submount and includes an optical waveguide; and a substance having a predetermined thickness which is disposed between the semiconductor laser chip and the substrate. In an oscillation wavelength stabilizing apparatus for a light source, the light source is a semiconductor laser which includes: an active region for providing gain; and a distributed Bragg reflection (DBR) region for controlling an oscillation wavelength. The apparatus includes a control section which monotonously varies, in a first direction, a DBR current to be input to the DBR region while detecting the oscillation wavelength of an output light of the semiconductor laser so as to detect a DBR current value I.sub.0 corresponding to a predetermined wavelength value, and then monotonously varies the DBR current in a second direction which is opposite the first direction beyond the detected value I.sub.0, and then monotonously varies the DBR current in the first direction again to set the DBR current at the detected value I.sub.0, thereby fixing the oscillation wavelength of the semiconductor laser chip at the predetermined wavelength value.

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