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61. 发明授权

US07227461B2 Security confirmation system and method thereof 有权
标题翻译：安全确认系统及其方法
公开(公告)号：US07227461B2
公开(公告)日：2007-06-05
申请号：US10848573
申请日：2004-05-19
申请人： Hwan-Jong Choi , Feel-Young Koo , Ja-In Koo , Koon-Seok Lee , Seung-Myun Baek , Yong-Tae Kim , Sung-Hwan Kang
发明人： Hwan-Jong Choi , Feel-Young Koo , Ja-In Koo , Koon-Seok Lee , Seung-Myun Baek , Yong-Tae Kim , Sung-Hwan Kang
IPC分类号： G05B23/02 , G05B11/01 , G05B15/00 , G08B29/00 , G08B1/08
CPC分类号： G08B13/1968 , G08B13/19656 , G08B25/08
摘要： The present invention discloses a security confirmation system which can achieve efficient communication by optimizing an amount of transmitted data, and a method thereof. The security confirmation system includes a home master device connected to at least one security device through a first network based on a predetermined protocol, for receiving predetermined security information from the security device, generating a service security data having the security information, and transmitting the service security data, and a user terminal connected to the home master device through a second network separated from the first network, for receiving and displaying the service security data.
摘要翻译：本发明公开了一种能够通过优化发送数据量来实现高效通信的安全确认系统及其方法。安全确认系统包括基于预定协议通过第一网络连接到至少一个安全设备的家庭主设备，用于从安全设备接收预定的安全信息，生成具有安全信息的服务安全数据，以及发送服务安全数据和通过与第一网络分离的第二网络连接到家庭主设备的用户终端，用于接收和显示服务安全数据。

62. 发明授权

US07176501B2 Tb,B-based yellow phosphor, its preparation method, and white semiconductor light emitting device incorporating the same 失效
标题翻译： Tb，B系黄色荧光体及其制备方法以及包含该荧光体的白色半导体发光装置
公开(公告)号：US07176501B2
公开(公告)日：2007-02-13
申请号：US10520855
申请日：2003-11-25
申请人： Dong-Yeoul Lee , Yong-Tae Kim , Jin-Hwan Kim , Eun-Joung Kim
发明人： Dong-Yeoul Lee , Yong-Tae Kim , Jin-Hwan Kim , Eun-Joung Kim
IPC分类号： H01L29/22
CPC分类号： C09K11/778 , H01L33/502 , H01L2224/48091 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , Y02B20/181 , H01L2924/00014
摘要： The present invention relates to a terbium borate-based yellow phosphor, a preparation method thereof, and a white semiconductor light emitting device incorporating the same. The terbium borate-based yellow phosphor of the present invention is represented by the general formula (Tb1-x-y-zREXAy)3DaBbO12:Cez (where, RE is at least one rare earth element selected from the group consisting of Y, Lu, Sc, La, Gd, Sm, Pr, Nd, Eu, Dy, Ho, Er, Tm and Yb; A is a typical metal element selected from the group consisting of Li, Na, K, Rb, Cs and Fr; D is a typical amphoteric element selected from the group consisting of Al, In and Ga; 0≦x
摘要翻译：本发明涉及一种硼酸铽基黄色荧光体及其制备方法以及包含该荧光体的白色半导体发光装置。本发明的基于硼酸铋的黄色荧光体由通式（Tb 1-xy z）表示，其中N 其中，RE至少为C 1〜C 12 一种选自Y，Lu，Sc，La，Gd，Sm，Pr，Nd，Eu，Dy，Ho，Er，Tm和Yb的稀土元素; A是选自以下的典型金属元素： Li，Na，K，Rb，Cs和Fr; D是选自Al，In和Ga的典型两性元素; 0 <= x <0.5; 0 <= y <0.5; 0

63. 发明申请

US20070019615A1 Home network system 审中-公开
标题翻译：家庭网络系统
公开(公告)号：US20070019615A1
公开(公告)日：2007-01-25
申请号：US10558432
申请日：2004-05-14
申请人： Seung-Myun Baek , Koon-Seok Lee , Yong-Tae Kim
发明人： Seung-Myun Baek , Koon-Seok Lee , Yong-Tae Kim
IPC分类号： H04L12/66
CPC分类号： H04L43/00 , H04L12/2803 , H04L12/2818 , H04L12/2825 , H04L43/0817 , H04L2012/2849
摘要： The present invention discloses a home network system (1) using a living network control protocol. The home network system (1) includes: at least two electric devices (41-49); and a network based on a predetermined protocol for connecting the electric devices (41-49), wherein a message transmitted between one electric device (41-49) and the other electric device (41-49) includes a command code field implying an operation that is to be performed by the other electric device (41-49), and an argument field according to a version of a protocol applied to one electric device (41-49) for performing the operation.
摘要翻译：本发明公开了一种使用生活网络控制协议的家庭网络系统（1）。家庭网络系统（1）包括：至少两个电子设备（41-49）; 以及基于用于连接电气设备的预定协议的网络（41-49），其中在一个电气设备（41-49）和另一个电子设备（41-49）之间传输的消息包括指示操作的命令代码字段（41-49），以及根据应用于一个电气设备（41-49）的协议的版本的参数字段来执行该操作。

64. 发明授权

US07151001B2 Fabrication method of self-aligned ferroelectric gate transistor using buffer layer of high etching selectivity 有权
标题翻译：使用高蚀刻选择性的缓冲层的自对准铁电栅极晶体管的制造方法
公开(公告)号：US07151001B2
公开(公告)日：2006-12-19
申请号：US10922949
申请日：2004-08-23
申请人： Yong-Tae Kim , Seong-Il Kim , Chun-Keun Kim , Sun-Il Shim
发明人： Yong-Tae Kim , Seong-Il Kim , Chun-Keun Kim , Sun-Il Shim
IPC分类号： H01L21/00
CPC分类号： H01L29/6684 , H01L21/2652 , H01L21/28291 , H01L29/66575
摘要： A fabrication method of a self-aligned ferroelectric gate transistor using a buffer layer of high etching selectivity is disclosed. A stacked structure is formed with a buffer layer with high etching selectivity inserted between a silicon substrate and a ferroelectric layer, and etching is performed on a portion where a source and a drain will be formed and then stopped at the buffer layer, thereby fabricating a self-aligned ferroelectric gate transistor without damage to the silicon thin film, and thus, an integration degree of a chip can be improved.
摘要翻译：公开了使用具有高蚀刻选择性的缓冲层的自对准铁电栅极晶体管的制造方法。在硅衬底和铁电体层之间形成具有高蚀刻选择性的缓冲层的堆叠结构，并且对形成源极和漏极的部分进行蚀刻，然后在缓冲层处停止，自对准的铁电栅极晶体管，而不损坏硅薄膜，从而可以提高芯片的集成度。

65. 发明授权

US07064378B2 Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same 失效
公开(公告)号：US07064378B2
公开(公告)日：2006-06-20
申请号：US10832948
申请日：2004-04-27
申请人： Hee-Seog Jeon , Seung-Beom Yoon , Yong-Tae Kim
发明人： Hee-Seog Jeon , Seung-Beom Yoon , Yong-Tae Kim
IPC分类号： H01L29/788
CPC分类号： H01L27/11568 , H01L21/28282 , H01L27/115 , H01L29/66833 , H01L29/7923
摘要： In a local-length nitride SONOS device and a method for forming the same, a local-length nitride floating gate structure is provided for mitigating or preventing lateral electron migration in the nitride floating gate. The structure includes a thin gate oxide, which leads to devices having a lower threshold voltage. In addition, the local-length nitride layer is self-aligned, which prevents nitride misalignment, and therefore leads to reduced threshold voltage variation among the devices.

66. 发明申请

US20050221194A1 Uv-cured multi-component polymer blend electrolyte, lithium secondary battery and their fabrication method 有权
标题翻译： Uv固化多组分聚合物共混电解质，锂二次电池及其制造方法
公开(公告)号：US20050221194A1
公开(公告)日：2005-10-06
申请号：US10275384
申请日：2001-01-31
申请人： Byung-Won Cho , Won-Il Cho , Hyung-Sun Kim , Un-Sek Kim , Hee-Woo Rhee , Yong-Tae Kim , Min-Kyu Song
发明人： Byung-Won Cho , Won-Il Cho , Hyung-Sun Kim , Un-Sek Kim , Hee-Woo Rhee , Yong-Tae Kim , Min-Kyu Song
IPC分类号： H01M6/16 , H01M10/052 , H01M10/0565 , H01M10/36 , H01M10/40
CPC分类号： H01M10/0565 , H01M6/168 , H01M10/052 , H01M2300/0082 , H01M2300/0088
摘要： The present invetion relates to a UV-cured multi-component polymer blend electrolyte, lithium secondary battery and their fabrication method, wherein the UV-cured multi-component polymer blend electrolyte, comprises: A) function-I polymer obtained by curing ethyleneglycoldi-(meth)acrylate oligomer of formula 1 by UV irradiation, CH2═CR1COO(CH2CH2O)nCOCR2═CH2 (1) wherein,R1 and R2 are independently a hydrogen or methyl group, and n is an integer of 3-20;B) function-II polymer selected from the group consisting of PAN-based polymer, PMMA-based polymer and mixtures thereof; C) function-III polymer selected from the group consisting of PVdF-based polymer, PVC-based polymer and mixtures thereof; and D) organic electrolyte solution in which lithium salt is dissolved in a solvent.
摘要翻译：本发明涉及一种UV固化多组分聚合物共混电解质，锂二次电池及其制造方法，其中UV固化的多组分聚合物共混电解质包括：A）通过将乙二醇（（甲基）丙烯酸酯低聚物，通过UV照射，CH 2 CO 2（CH 2 CH 2 CH 2）（1）其中，R 1和R 2各自独立地为氢， / SUP>独立地为氢或甲基，n为3-20的整数; B）选自PAN基聚合物，PMMA基聚合物及其混合物的官能团II聚合物; C）选自PVdF基聚合物，基于PVC的聚合物及其混合物的功能III聚合物; 和D）其中锂盐溶解在溶剂中的有机电解质溶液。

67. 发明申请

US20050059209A1 Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same 失效
标题翻译：具有自对准ONO结构的局部长度氮化物SONOS器件及其制造方法
公开(公告)号：US20050059209A1
公开(公告)日：2005-03-17
申请号：US10832948
申请日：2004-04-27
申请人： Hee-Seog Jeon , Seung-Beom Yoon , Yong-Tae Kim
发明人： Hee-Seog Jeon , Seung-Beom Yoon , Yong-Tae Kim
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8242 , H01L21/8246 , H01L27/115 , H01L29/792
CPC分类号： H01L27/11568 , H01L21/28282 , H01L27/115 , H01L29/66833 , H01L29/7923
摘要： In a local-length nitride SONOS device and a method for forming the same, a local-length nitride floating gate structure is provided for mitigating or preventing lateral electron migration in the nitride floating gate. The structure includes a thin gate oxide, which leads to devices having a lower threshold voltage. In addition, the local-length nitride layer is self-aligned, which prevents nitride misalignment, and therefore leads to reduced threshold voltage variation among the devices.
摘要翻译：在本地长度的氮化物SONOS器件及其形成方法中，提供局部长度的氮化物浮栅结构，用于减轻或防止氮化物浮栅中的横向电子迁移。该结构包括薄栅极氧化物，其导致具有较低阈值电压的器件。此外，局部长度的氮化物层是自对准的，这防止氮化物不对准，并且因此导致器件之间的阈值电压变化降低。

68. 发明授权

US09628771B2 Transmitter and receiver for transmitting and receiving multimedia content, and reproduction method therefor 有权
公开(公告)号：US09628771B2
公开(公告)日：2017-04-18
申请号：US13992355
申请日：2011-12-07
申请人： Hong-seok Park , Jae-jun Lee , Yu-sung Joo , Yong-seok Jang , Hee-jean Kim , Dae-jong Lee , Moon-seok Jang , Yong-Tae Kim
发明人： Hong-seok Park , Jae-jun Lee , Yu-sung Joo , Yong-seok Jang , Hee-jean Kim , Dae-jong Lee , Moon-seok Jang , Yong-Tae Kim
IPC分类号： H04N15/00 , H04N13/00 , H04N21/2362 , H04N21/43 , H04N21/462 , H04N21/8547 , H04N21/81 , H04N13/04
CPC分类号： H04N13/167 , H04N13/178 , H04N13/194 , H04N13/30 , H04N13/398 , H04N21/2362 , H04N21/4307 , H04N21/4622 , H04N21/816 , H04N21/8547
摘要： A method and apparatus for reproducing a multimedia content are provided. The apparatus includes: a receiver which is configured to receive, through different paths, a first signal including a left-side image and a first synchronization information item, and a second signal including a right-side image and a second synchronization information item; and a signal processor which is configured to synchronize and reproduce the left-side image and the right-side image using the first synchronization information item and the second synchronization information item.

69. 发明授权

US08507997B2 Mask read-only memory having a fake select transistor 有权
标题翻译：具有假选择晶体管的掩模只读存储器
公开(公告)号：US08507997B2
公开(公告)日：2013-08-13
申请号：US13050241
申请日：2011-03-17
申请人： Seung-Jin Yang , Yong-Tae Kim , Hyuck-Soo Yang , Jung-Ho Moon
发明人： Seung-Jin Yang , Yong-Tae Kim , Hyuck-Soo Yang , Jung-Ho Moon
IPC分类号： H01L21/70
CPC分类号： H01L27/0203 , H01L27/112 , H01L27/11253
摘要： A mask read-only memory (ROM) includes parallel doping lines of a second conductivity type formed in a substrate of a first conductivity type, a first insulation film formed on the doping lines and the substrate, conductive pads fainted on the first insulation film, a second insulation film formed on the first insulation film and the conductive pads, parallel wires formed on the second insulation film extending perpendicular to the doping lines, contact plugs formed in the first insulation film that connect the doping lines to the conductive pads, and vias formed in the second insulation film that connect the conductive pads to the wires, wherein crossings of the doping lines and the wires define memory cells, contact plugs and vias are formed in memory cells of a first type, and at least one of the contact plug and via are missing from memory cells of a second type.
摘要翻译：掩模只读存储器（ROM）包括形成在第一导电类型的衬底中的第二导电类型的并行掺杂线，形成在掺杂线和衬底上的第一绝缘膜，位于第一绝缘膜上的导电焊盘，形成在所述第一绝缘膜和所述导电焊盘上的第二绝缘膜，形成在垂直于所述掺杂线延伸的所述第二绝缘膜上的平行布线，形成在将所述掺杂线连接到所述导电焊盘的所述第一绝缘膜中的接触插塞，以及通孔形成在所述第二绝缘膜中，所述第二绝缘膜将所述导电焊盘连接到所述导线，其中所述掺杂线和所述布线的交叉限定存储器单元，接触插塞和通孔形成在第一类型的存储器单元中，并且所述接触插塞并且第二类型的存储器单元中缺少通孔。

70. 发明授权

US08072149B2 Unbalanced ion source 有权
标题翻译：不平衡离子源
公开(公告)号：US08072149B2
公开(公告)日：2011-12-06
申请号：US12079978
申请日：2008-03-31
申请人： Jeong-Ha Cho , Bon-Woong Koo , Byung-Yeal Yoon , Yong-Tae Kim , Jeong-Ho Yoon
发明人： Jeong-Ha Cho , Bon-Woong Koo , Byung-Yeal Yoon , Yong-Tae Kim , Jeong-Ho Yoon
IPC分类号： H01J7/24
CPC分类号： H01J37/08 , H01J27/08 , H01J37/04 , H01J37/3171 , H01J2237/03 , H01J2237/06308 , H01J2237/082
摘要： A dual unbalanced indirectly heated cathode (IHC) ion chamber is disclosed. The cathodes have different surface areas, thereby affecting the amount of heat radiated by each. In the preferred embodiment, one cathode is of the size and dimension typically used for IHC ionization, as traditionally used for hot mode operation. The second cathode, preferably located on the opposite wall of the chamber, is of a smaller size. This smaller cathode is still indirectly heated by a filament, but due to its smaller size, radiates less heat into the source chamber, allowing the ion source to operate in cold mode, thereby preserving the molecular structure of the target molecules. In both modes, the unused cathode is preferably biased so as to be at the same potential as the IHC, thus allowing it to act as a repeller.
摘要翻译：公开了一种双重不平衡间接加热阴极（IHC）离子室。阴极具有不同的表面积，从而影响每个阴极的辐射量。在优选实施例中，一个阴极具有通常用于IHC电离的尺寸和尺寸，如传统上用于热模式操作。优选地，位于腔室的相对壁上的第二阴极具有较小的尺寸。这种较小的阴极仍然被灯丝间接加热，但是由于其尺寸较小，辐射较少的热量进入源室，从而允许离子源以冷模式运行，从而保持目标分子的分子结构。在两种模式中，未使用的阴极优选被偏压以与IHC处于相同的电位，从而允许其用作推斥器。

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