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61. 发明授权

US07220532B2 Chemical amplification type resist composition 有权
标题翻译：化学放大型抗蚀剂组合物
公开(公告)号：US07220532B2
公开(公告)日：2007-05-22
申请号：US10657149
申请日：2003-09-09
申请人： Yoshiyuki Takata , Isao Yoshida , Hirotoshi Nakanishi
发明人： Yoshiyuki Takata , Isao Yoshida , Hirotoshi Nakanishi
IPC分类号： G03F7/039
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0392 , Y10S430/111 , Y10S430/115 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical amplification type positive resist composition comprising a nitrogen containing compound of the formula (VIa) or (VIb); resin which contains a structural unit having an acid labile group and which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid; and an acid generator of the formula (I)
摘要翻译：本发明提供了包含式（VIa）或（VIb）的含氮化合物的化学扩增型正性抗蚀剂组合物; 树脂，其含有具有酸不稳定基团的结构单元，其本身在碱性水溶液中不溶或难溶，但通过酸作用而溶于碱水溶液中; 和式（I）的酸产生剂，

62. 发明申请

US20070100096A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same 有权
标题翻译：适用于酸产生剂的盐和含有它的化学放大抗蚀剂组合物
公开(公告)号：US20070100096A1
公开(公告)日：2007-05-03
申请号：US11516644
申请日：2006-09-07
申请人： Yukako Harada , Isao Yoshida , Yoshiyuki Takata
发明人： Yukako Harada , Isao Yoshida , Yoshiyuki Takata
IPC分类号： C08F4/06 , C07C309/12
CPC分类号： C07C309/17 , C07C381/12 , C07C2601/14
摘要： The present invention provides a salt of the formula (I): wherein X represents divalent or trivalent residue of acyclic hydrocarbon having 1 to 30 carbon atoms or divalent or trivalent residue of hydrocarbon having 3 to 30 carbon atoms which contains monocyclic or bicyclic ring, wherein —CH2— in the hydrocarbon may be substituted with —O— and one or more hydrogen atom in X is optionally substituted with alkoxy group having 1 to 6 carbon atoms, perfluoroalkyl group having 1 to 4 carbon atoms, hydroxyalkyl group having 1 to 6 carbon atoms, hydroxyl group or cyano group; Q1 and Q2each independently represent fluorine atom or perfluoroalkyl group having 1 to 6 carbon atoms; A+ represents organic counter ion; Y represents hydroxyl group, cyano group or methoxy group; and n shows 1 or 2. The present invention also provides a chemically amplified resist composition comprising the salt of the formula (I).
摘要翻译：本发明提供式（I）的盐：其中X表示碳原子数1〜30的无环烃的二价或三价残基或含有单环或双环的碳原子数3〜30的二价或三价残基，其中，在烃中的-CH 2 - 2可以被-O-取代，X中的一个或多个氢原子任选被具有1至6个碳原子的烷氧基，具有1至4个碳原子的全氟烷基取代，具有1-6个碳原子的羟基烷基，羟基或氰基; Q 1和Q 2各自独立地表示氟原子或具有1至6个碳原子的全氟烷基; A ^{+ 代表有机抗衡离子; Y表示羟基，氰基或甲氧基; 并且n表示1或2.本发明还提供包含式（I）的盐的化学放大抗蚀剂组合物。}

63. 发明申请

US20070027336A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same 有权
标题翻译：适用于酸产生剂的盐和含有它的化学放大抗蚀剂组合物
公开(公告)号：US20070027336A1
公开(公告)日：2007-02-01
申请号：US11390319
申请日：2006-03-28
申请人： Isao Yoshida , Yukako Harada , Satoshi Yamaguchi , Nobuo Ando
发明人： Isao Yoshida , Yukako Harada , Satoshi Yamaguchi , Nobuo Ando
IPC分类号： C07C309/51
CPC分类号： C07C309/17 , C07C2603/74
摘要： The present invention provides a salt of the formula (L) A salt of the formula (L): wherein Q represents —CO— group or —C(OH)— group; ring X represents monocyclic or polycyclic hydrocarbon group having 3 to 30 carbon atoms in which a hydrogen atom is substituted with a hydroxyl group at Q position when Q is —C(OH)— group or in which two hydrogen atoms are substituted with ≡O group at Q position when Q is —CO— group, and at least one hydrogen atom in the monocylic or polycyclic hydrocarbon group may optionally be substituted with alkyl group having 1 to 6 carbon atom, alkoxy group having 1 to 6 carbon atom, perfluoroalkyl group having 1 to 4 carbon atoms, hydroxyalkyl group having 1 to 6 carbon atoms, hydroxyl group or cyano group; R10 and R20 each independently represent fluorine atom or perfluoroalkyl group having 1 to 6 carbon atoms; and A+ represents organic counter ion. The present invention also provides a chemically amplified resist composition comprising the salt of the formula (L).
摘要翻译：本发明提供式（L）的盐式（L）的盐：其中Q表示-CO-基或-C（OH） - 基; 环X表示当Q为-C（OH） - 基团或其中两个氢原子被≡O基团取代时，其中氢原子被Q位羟基取代的具有3-30个碳原子的单环或多环烃基在Q为-CO-基的Q位置，单环或多环烃基中的至少一个氢原子可以任选被具有1至6个碳原子的烷基，具有1至6个碳原子的烷氧基，具有1至6个碳原子的烷氧基， 1至4个碳原子，具有1至6个碳原子的羟基烷基，羟基或氰基; R 10和R 20各自独立地表示氟原子或具有1至6个碳原子的全氟烷基; 而A +表示有机抗衡离子。本发明还提供了包含式（L）的盐的化学放大抗蚀剂组合物。

64. 发明申请

US20060250082A1 Magnesium oxide-containing barrier layer for thick dielectric electroluminescent displays 有权
标题翻译：用于厚电介质电致发光显示器的含氧化镁的阻挡层
公开(公告)号：US20060250082A1
公开(公告)日：2006-11-09
申请号：US11403708
申请日：2006-04-13
申请人： Isao Yoshida , Hiroki Hamada , Joe Acchione , Yongbao Xin , San Yu
发明人： Isao Yoshida , Hiroki Hamada , Joe Acchione , Yongbao Xin , San Yu
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H05B33/14 , C09K11/7734 , H05B33/22
摘要： A novel laminate is provided to improve the operating stability of thioaluminate based phosphors used in ac thick film dielectric electroluminescent displays. The novel structure comprises a rare earth activated alkaline earth thioaluminate phosphor thin film layer and a magnesium oxide or magnesium oxide containing layer provided directly adjacent and in contact with the bottom of the phosphor thin film layer. The invention is particularly applicable to phosphors used in electroluminescent displays that employ thick dielectric layers subject to high processing temperatures to form and activate the phosphor films.
摘要翻译：提供了一种新颖的层压材料，以改善在ac厚膜电介质电致发光显示器中使用的硫铝酸盐基磷光体的操作稳定性。该新型结构包括稀土活化的碱土金属硫铝酸盐荧光体薄膜层和直接邻近并与荧光体薄膜层的底部接触的氧化镁或氧化镁含有层。本发明特别适用于采用在高处理温度下形成和激活荧光膜的厚电介质层的电致发光显示器中使用的荧光体。

65. 发明申请

US20050173738A1 Semiconductor device and manufacturing method of the same 审中-公开
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20050173738A1
公开(公告)日：2005-08-11
申请号：US11049998
申请日：2005-02-04
申请人： Masao Kondo , Yutaka Hoshino , Kazuhiro Ohnishi , Isao Yoshida , Masatoshi Morikawa
发明人： Masao Kondo , Yutaka Hoshino , Kazuhiro Ohnishi , Isao Yoshida , Masatoshi Morikawa
IPC分类号： H01L29/78 , H01L21/336 , H01L29/06 , H01L29/08 , H01L29/165 , H01L29/417 , H01L29/45 , H01L29/80
CPC分类号： H01L29/66659 , H01L29/0657 , H01L29/0696 , H01L29/0847 , H01L29/0886 , H01L29/165 , H01L29/41725 , H01L29/4175 , H01L29/41758 , H01L29/456 , H01L29/66628 , H01L29/7835 , H01L29/7842
摘要： Provided is a technology capable of reducing the on-resistance of a power MISFET while suppressing the generation of defects in a strained silicon layer. A strained silicon layer is formed only over an underlying strained silicon layer in the drain region by epitaxial growth. Large portions of a lightly-doped n type impurity diffusion region, offset region and heavily-doped n type impurity diffusion region are formed in these strained silicon layers, having a higher electron mobility than a conventional silicon layer.
摘要翻译：提供了一种能够在抑制应变硅层中的缺陷的产生的同时降低功率MISFET的导通电阻的技术。通过外延生长仅在漏极区域中的下层应变硅层上形成应变硅层。在这些应变硅层中形成大量的轻掺杂n型杂质扩散区域，偏移区域和重掺杂n型杂质扩散区域，其具有比常规硅层更高的电子迁移率。

66. 发明申请

US20050100819A1 Chemical amplification type positive resist composition and a resin therefor 有权
标题翻译：化学扩增型正型抗蚀剂组合物及其树脂
公开(公告)号：US20050100819A1
公开(公告)日：2005-05-12
申请号：US10952793
申请日：2004-09-30
申请人： Yusuke Fuji , Yoshiyuki Takata , Isao Yoshida
发明人： Yusuke Fuji , Yoshiyuki Takata , Isao Yoshida
IPC分类号： G03C1/76 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： A resin which comprises (1) at least one structural unit selected from the group consisting of a structural unit derived from 3-hydroxy-1-adamantyl(meth)acrylate, a structural unit derived from 3,5-dihydroxy-1-adamantyl(meth)acrylate, a structural unit derived from (meth)acryloyloxy-γ-butyrolactone having a lactone ring optionally substituted by alkyl, a structural unit of the formula (Ia) and a structural unit of the formula (Ib) and (2) a structural unit of the formula (II) and which itself is insoluble or poorly soluble in an alkali aqueous solution but becomes soluble in an alkali aqueous solution by the action of an acid; and also provides a chemical amplification type positive resist composition comprising a resin defined above and an acid generator.
摘要翻译：一种树脂，其包含（1）至少一种选自由（甲基）丙烯酸3-羟基-1-金刚烷基酯衍生的结构单元的结构单元，衍生自3,5-二羟基-1-金刚烷基（甲基）丙烯酸酯，衍生自具有任选被烷基取代的内酯环的（甲基）丙烯酰氧基-γ-丁内酯的结构单元，式（Ia）的结构单元和式（Ib）和（2）的结构单元结构单元，其本身在碱性水溶液中不溶或难溶，但通过酸的作用而溶于碱性水溶液中; 并且还提供包含上述树脂和酸发生剂的化学放大型正性抗蚀剂组合物。

67. 发明申请

US20050017296A1 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050017296A1
公开(公告)日：2005-01-27
申请号：US10921327
申请日：2004-08-19
申请人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
发明人： Yutaka Hoshino , Shuji Ikeda , Isao Yoshida , Shiro Kamohara , Megumi Kawakami , Tomoyuki Miyake , Masatoshi Morikawa
IPC分类号： H01L29/78 , H01L21/336 , H01L21/8234 , H01L23/482 , H01L23/532 , H01L27/04 , H01L27/088 , H01L29/417 , H01L29/80
CPC分类号： H01L29/66659 , H01L21/823475 , H01L21/823871 , H01L23/4827 , H01L23/53219 , H01L23/53295 , H01L27/0255 , H01L27/088 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/086 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/4175 , H01L29/41758 , H01L29/42368 , H01L29/4238 , H01L29/4916 , H01L29/7835 , H01L29/861 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs 13 (P1) for leading out electrodes on a source region 10, a drain region 9 and leach-through layers 3 (4), to which a first layer wirings 11a, 11d (M1) are connected and, further, backing second layer wirings 12a to 12d are connected on the conductor plugs 13 (P1) to the first layer wirings 11s, 11d (M1).
摘要翻译：在具有漏极偏移区域的高频放大MOSFET中，通过在源极区域10，漏极区域9和浸出层9上引出电极的导体插头13（P1）来减小尺寸并降低导通电阻。连接有第一层布线11a，11d（M1）的第3层（4），另外，背面的第二层布线12a〜12d在导体插塞13（P1）上连接到第一层布线11s，11d（M1 ）。

68. 发明授权

US06529231B1 Television meeting system 失效
标题翻译：电视会议系统
公开(公告)号：US06529231B1
公开(公告)日：2003-03-04
申请号：US09568249
申请日：2000-05-10
申请人： Isao Yoshida
发明人： Isao Yoshida
IPC分类号： H04N714
CPC分类号： H04N7/15
摘要： In a television meeting system, image data and voice data are transmitted and received among a plurality of terminal units. The terminal unit transmits and receives a video signal synthesized by combining desired background data selected by a user with taken-out image and voice. The terminal unit includes a recorder in which desired background data selected by the user is preliminarily recorded.
摘要翻译：在电视会议系统中，在多个终端单元之间发送和接收图像数据和语音数据。终端单元通过将由用户选择的期望的背景数据与取出的图像和语音组合来发送和接收合成的视频信号。终端单元包括其中预先记录了由用户选择的期望背景数据的记录器。

69. 发明授权

US06513267B2 Snow removing machine with snow removing plate 失效
公开(公告)号：US06513267B2
公开(公告)日：2003-02-04
申请号：US09893723
申请日：2001-06-28
申请人： Isao Yoshida , Masakatsu Kono
发明人： Isao Yoshida , Masakatsu Kono
IPC分类号： E01H400
CPC分类号： E01H5/04
摘要： A snow removing machine equipped with a snow removing plate is disclosed. The snow removing plate is mounted to a front portion of a vehicle body which forms part of the snow removing machine. An operating handle having grip portions is mounted to a rear portion of the vehicle body and obliquely extends upward. A battery, an electric motor and a power transmission mechanism are located below a linear line intersecting between an upper end of the snow removing plate and the grip portion. This causes the battery, the electric motor and the power transmission mechanism to be located below a view line of an operator when he looks at the snow removing plate, avoiding the view line from being disturbed to allow the operator to look at the upper end of the snow removing plate in his working attitude for thereby providing ease of operation of the snow removing machine.

70. 发明授权

US06385025B2 Insulated gate type semiconductor apparatus with a control circuit 失效
标题翻译：具有控制电路的绝缘栅型半导体装置
公开(公告)号：US06385025B2
公开(公告)日：2002-05-07
申请号：US09797983
申请日：2001-03-05
申请人： Kozo Sakamoto , Isao Yoshida
发明人： Kozo Sakamoto , Isao Yoshida
IPC分类号： H02H300
CPC分类号： H03K17/0828 , H03K17/0822 , H03K2017/0806
摘要： A semiconductor apparatus such as a power MOSFET, an IGBT, or the like is provided having therein a control circuit such as an over-heating protection circuit and an over-current protection circuit, which realizes both of high-speed operation and prevention of erroneous operation caused by a parasitic device. To prevent erroneous operation, the control circuit controls so that when the voltage of a gate terminal is positive relative to that of a source terminal, a first switch circuit is turned on, when the voltage of the gate terminal is negative relative to that of the source terminal, a second switch circuit is turned on, and when the gate terminal and the source terminal have an almost same potential and a drain terminal has a high potential, the second switch circuit is turned on, thereby reducing leakage current from the drain terminal to the gate terminal.
摘要翻译：提供诸如功率MOSFET，IGBT等的半导体装置，其中具有诸如过热保护电路和过电流保护电路的控制电路，其实现高速操作和防止错误由寄生器件引起的操作。为了防止错误操作，控制电路进行控制，使得当栅极端子的电压相对于源极端子的电压为正时，第一开关电路导通，当栅极端子的电压相对于栅极端子的电压为负时源极端子，第二开关电路导通，并且当栅极端子和源极端子具有几乎相同的电位且漏极端子具有高电位时，第二开关电路导通，从而减少漏极端子的漏电流到门终端。

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