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61. 发明授权

US5902713A Chemical-sensitization photoresist composition 失效
公开(公告)号：US5902713A
公开(公告)日：1999-05-11
申请号：US762920
申请日：1996-12-10
申请人： Hideo Hada , Hiroyuki Yamazaki , Yoshiki Sugeta , Hiroshi Komano , Kiyoshi Ishikawa
发明人： Hideo Hada , Hiroyuki Yamazaki , Yoshiki Sugeta , Hiroshi Komano , Kiyoshi Ishikawa
IPC分类号： C09K3/00 , G03F7/004 , G03F7/033 , G03F7/038 , G03F7/039 , H01L21/027 , G03C5/00
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/039 , Y10S430/12 , Y10S430/122
摘要： Disclosed are novel high-sensitivity positive- and negative-working chemical-sensitization photoresist compositions capable of giving a highly heat-resistant patterned resist layer of high resolution having excellently orthogonal cross sectional profile without being influenced by standing waves. The composition contains, as an acid generating agent by irradiation with actinic rays, a specific cyano-substituted oximesulfonate compound such as .alpha.-(methylsulfonyloxyimino)-4-methoxybenzyl cyanide. The advantages obtained by the use of this specific acid-generating agent is remarkable when the film-forming resinous ingredient has such a molecular weight distribution that the ratio of the weight-average molecular weight to the number-average molecular weight does not exceed 3.5.

62. 发明授权

US5892095A Cyano group-containing oxime sulfonate compounds 失效
标题翻译：含氰基的肟磺酸盐化合物
公开(公告)号：US5892095A
公开(公告)日：1999-04-06
申请号：US791814
申请日：1997-01-30
申请人： Hideo Hada , Hiroshi Komano , Toshimasa Nakayama
发明人： Hideo Hada , Hiroshi Komano , Toshimasa Nakayama
IPC分类号： C07C307/02 , C07C309/65 , C07C309/66 , C07C309/73 , G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , C07C255/00 , G03F5/16 , G03F7/022
CPC分类号： C07C309/66 , C07C309/65 , C07C309/73 , G03F7/0045
摘要： Disclosed is a novel positive-working or negative-working chemical-sensitization photoresist composition useful in the photolithographic patterning works for the manufacture of electronic devices. The photoresist composition is characterized by a unique acid-generating agent capable of releasing an acid by the pattern-wise exposure of the resist layer to actinic rays so as to increase or decrease the solubility of the resist layer in an aqueous alkaline developer solution. The acid-generating agent proposed is a novel cyano group-containing oxime sulfonate di- or triester compound represented by the general formulaA�C(CN).dbd.N--O--SO.sub.2 --R!.sub.n,in which each R is, independently from the others, an unsubstituted or substituted monovalent hydrocarbon group such as alkyl groups, A is a divalent or tervalent organic group or, preferably, phenylene group and the subscript n is 2, when A is a divalent group, or 3, when A is a tervalent group or, preferably 2. Since more than one of sulfonic acid molecules are released from one molecule of the sulfonate compound by the exposure to actinic rays, the chemical-sensitization photoresist composition exhibits high photosensitivity.
摘要翻译：公开了一种用于制造电子器件的光刻图案化工艺中的新型正性或负性化学增感光致抗蚀剂组合物。光致抗蚀剂组合物的特征在于能够通过抗蚀剂层与光化射线的图案曝光而释放酸的独特的酸产生剂，从而增加或降低抗蚀剂层在碱性显影剂水溶液中的溶解度。所提出的酸产生剂是由通式A [C（CN）= NO-SO 2 -R] n表示的新的含氰基的肟磺酸酯二酯或三酯化合物，其中每个R独立地为未取代或取代的一价烃基如烷基，A是二价或三价有机基团，或优选亚苯基，下标n为2，当A为二价基团时，或3，当A为三价基团或，优选2.由于通过暴露于光化射线，一个以上的磺酸分子从一分子的磺酸酯化合物中释放出来，化学增感光致抗蚀剂组合物表现出高的光敏性。

63. 发明授权

US08097397B2 Material for formation of protective film, method for formation of photoresist pattern, and solution for washing/removal of protective film 有权
标题翻译：用于形成保护膜的材料，形成光致抗蚀剂图案的方法和用于洗涤/除去保护膜的溶液
公开(公告)号：US08097397B2
公开(公告)日：2012-01-17
申请号：US12441514
申请日：2007-09-13
申请人： Toshikazu Takayama , Keita Ishiduka , Hideo Hada , Shigeru Yokoi
发明人： Toshikazu Takayama , Keita Ishiduka , Hideo Hada , Shigeru Yokoi
IPC分类号： G03F7/00 , G03F7/004 , G03F7/26 , G03F7/40
CPC分类号： G03F7/11 , G03F7/2041 , Y10S430/106 , Y10S430/146
摘要： Disclosed are: a material for forming a protective film to be laminated on a photoresist film, which can prevent the contamination of an exposing device with an outgas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which sparingly causes mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for forming a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method.
摘要翻译：公开了一种用于形成层压在光致抗蚀剂膜上的保护膜的材料，其可以防止由具有高斥水性的对环境影响很小的光致抗蚀剂膜产生的废气对曝光装置的污染性质，其微小地引起与光致抗蚀剂膜的混合，并且其可以形成高分辨率光致抗蚀剂图案; 形成光致抗蚀剂图案的方法; 以及洗涤/除去保护膜的溶液。具体公开的是：形成保护膜的材料，其包含（a）非极性聚合物和（b）非极性溶剂; 通过使用该材料形成光致抗蚀剂图案的方法; 以及旨在用于该方法的保护膜的洗涤/去除溶液。

64. 发明授权

US07879528B2 Resist composition for electron beam or EUV 有权
标题翻译：抗蚀剂组成为电子束或EUV
公开(公告)号：US07879528B2
公开(公告)日：2011-02-01
申请号：US12044678
申请日：2008-03-07
申请人： Takeo Watanabe , Hideo Hada , Hiroo Kinoshita
发明人： Takeo Watanabe , Hideo Hada , Hiroo Kinoshita
IPC分类号： G03F7/00 , G03F7/004 , G03F7/20 , G03F7/26 , G03F7/40
CPC分类号： G03F7/0048 , G03F7/0397 , Y10S430/106 , Y10S430/114 , Y10S430/118 , Y10S430/12 , Y10S430/143 , Y10S430/146
摘要： A resist composition and a method of forming a resist pattern that enable contamination within the exposure apparatus to be prevented in lithography processes using an electron beam or EUV (extreme ultraviolet light). In this method, an organic solvent containing, as the principal component, one or more compounds selected from a group consisting of propylene glycol monomethyl ether (PGME), methyl amyl ketone (MAK), butyl acetate (BuOAc), and 3-methyl methoxy propionate (MMP) is used as the resist solvent.
摘要翻译：在使用电子束或EUV（极紫外光）的光刻工艺中，抗蚀剂组合物和形成能够防止曝光装置内的污染的抗蚀剂图案的方法。在该方法中，含有选自丙二醇单甲基醚（PGME），甲基戊基酮（MAK），乙酸丁酯（BuOAc）和3-甲基甲氧基中的一种或多种化合物作为主要成分的有机溶剂丙酸盐（MMP）用作抗蚀剂溶剂。

65. 发明授权

US07807328B2 Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method 有权
标题翻译：高分子化合物，包含高分子化合物的光致抗蚀剂组合物和抗蚀图案形成方法
公开(公告)号：US07807328B2
公开(公告)日：2010-10-05
申请号：US10588866
申请日：2005-01-20
申请人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Syogo Matsumaru , Hideo Hada
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/0046 , C08G61/08 , G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： The present invention provide a polymer compound whereby the alkali solubility greatly changes before and after exposure in a chemically amplified positive resist, and a photoresist composition including the polymer compound and a resist pattern formation method which can form a fine pattern with high resolution. The photoresist composition and the resist pattern formation method use the polymer compound including at least one substituent group selected from an alcoholic hydroxyl group, a phenolic hydroxyl group, or a carboxyl group as an alkali soluble group (i), wherein the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH2—O—R (1) (wherein R represents an organic group containing no more than 20 carbon atoms and at least one hydrophilic group).
摘要翻译：本发明提供了一种聚合物化合物，其中碱溶解度在化学放大的正性抗蚀剂中暴露之前和之后剧烈变化，以及包含高分子化合物的光致抗蚀剂组合物和能够以高分辨率形成精细图案的抗蚀剂图案形成方法。光致抗蚀剂组合物和抗蚀图案形成方法使用包含至少一个选自醇羟基，酚羟基或羧基的取代基的聚合物化合物作为碱溶性基团（i），其中取代基被保护由通式（1）表示的酸解离的溶解抑制基团（ⅱ）：-CH 2 -O-R（1）（其中R表示含有不超过20个碳原子的有机基团和至少一个亲水基团）。

66. 发明授权

US07771911B2 Process for producing photoresist composition, filter, coater and photoresist composition 有权
标题翻译：光致抗蚀剂组合物，过滤器，涂布机和光致抗蚀剂组合物的制造方法
公开(公告)号：US07771911B2
公开(公告)日：2010-08-10
申请号：US10536047
申请日：2003-12-18
申请人： Hideo Hada , Takeshi Iwai , Masaaki Shimazaki , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Hirokazu Ozaki
发明人： Hideo Hada , Takeshi Iwai , Masaaki Shimazaki , Masaaki Muroi , Kota Atsuchi , Hiroaki Tomida , Hirokazu Ozaki
IPC分类号： G03C1/00 , C02F1/44
CPC分类号： B01D61/58 , B01D69/02 , B01D71/26 , B01D71/56 , G03F7/0397 , G03F7/16 , G03F7/162
摘要： A technique to acquire a photoresist composition which can reduce occurrence of defects of a resist pattern after development is provided. Further, a technique to obtain a photoresist composition having excellent storage stability characteristics as a resist solution (storage stability); and a technique to obtain a photoresist composition which reduces the change of sensitivity and resist pattern size after treatment almost completely are provided. A photoresist composition containing a resin component (A), an acid-generating component (B) for generating an acid under exposure, and an organic solvent (C) is passed through a first filter 2a equipped with a first membrane having zeta potential of more than −20 mV but no more than 15 mV in distilled water of pH 7.0.
摘要翻译：提供了获得能够减少显影后的抗蚀剂图案的缺陷发生的光致抗蚀剂组合物的技术。此外，获得具有优异的储存稳定性特性的光致抗蚀剂组合物作为抗蚀剂溶液的技术（保存稳定性）; 并且提供了一种获得光刻胶组合物的技术，其提供了几乎完全降低了处理后的灵敏度变化和抗蚀剂图案尺寸的技术。含有树脂组分（A），产生暴露酸的产酸组分（B）和有机溶剂（C）的光致抗蚀剂组合物通过配备有具有更多ζ电位的第一膜的第一过滤器2a 在pH 7.0的蒸馏水中为-20mV，但不超过15mV。

67. 发明授权

US07713679B2 Resist composition, method of forming resist pattern, novel compound, and acid generator 有权
标题翻译：抗蚀剂组合物，抗蚀剂图案形成方法，新型化合物和酸发生剂
公开(公告)号：US07713679B2
公开(公告)日：2010-05-11
申请号：US12251327
申请日：2008-10-14
申请人： Keita Ishiduka , Yoshiyuki Utsumi , Akiya Kawaue , Takehiro Seshimo , Hideo Hada
发明人： Keita Ishiduka , Yoshiyuki Utsumi , Akiya Kawaue , Takehiro Seshimo , Hideo Hada
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , C07C309/10 , C07C381/12 , G03F7/0046 , G03F7/0382 , G03F7/0397 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/123
摘要： There is provided a compound represented by a general formula (B1-1) shown below, an acid generator composed of the above compound, a resist composition containing an acid generator composed of the above compound, and a method of forming a resist pattern: (wherein RX represents a hydrocarbon group which may contain a substituent group; Q1 represents an alkylene group of 1 to 12 carbon atoms which may contain a substituent group, or a single bond; n represents an integer of 0 or 1; Y1 represents an alkylene group of 1 to 4 carbon atoms, or a fluorinated alkylene group of 1 to 4 carbon atoms; and A+ represents an organic cation which contains a nitrogen atom).
摘要翻译：提供由下述通式（B1-1）表示的化合物，由上述化合物组成的酸产生剂，含有由上述化合物组成的酸发生剂的抗蚀剂组合物和形成抗蚀剂图案的方法：（其中RX表示可以含有取代基的烃基; Q1表示可以含有取代基的1〜12个碳原子的亚烷基或单键; n表示0或1的整数; Y1表示亚烷基 1〜4个碳原子的氟化亚烷基或1〜4个碳原子的氟化亚烷基，A +表示含有氮原子的有机阳离子。

68. 发明授权

US07592122B2 Photoresist composition, and low-molecular compound and high-molecular compound for the photoresist composition 有权
标题翻译：光致抗蚀剂组合物和用于光致抗蚀剂组合物的低分子化合物和高分子化合物
公开(公告)号：US07592122B2
公开(公告)日：2009-09-22
申请号：US10553315
申请日：2004-04-15
申请人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Mitsuru Sato , Syogo Matsumaru , Hideo Hada
发明人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida , Mitsuru Sato , Syogo Matsumaru , Hideo Hada
IPC分类号： G03F7/004 , C08C19/28
CPC分类号： C07C43/126 , C07C43/162 , C07C43/1747 , C07C69/96 , C07C2601/14 , C07C2602/42 , G03F7/0046 , G03F7/0395 , G03F7/0397 , G03F7/0757 , Y10S430/108
摘要： A high-molecular compound and a low-molecular compound or both having an alkali-soluble site (i) wherein at least a part of the alkali-soluble site (i) is protected with (ii) a halogen atom-containing acetal type acid-dissociative, dissolution inhibiting group, as well as a photoresist composition comprising the same. The photoresist composition is highly stable during storage and can give a resist pattern excellent in sectional rectangular shape and having high transparency to an exposure light, particularly a light having a wavelength of 300 nm or less.
摘要翻译：具有碱溶性部位（i）的高分子化合物和低分子化合物或二者，其中至少一部分碱溶性部位（i）用（ⅱ）含卤原子的缩醛型酸 - 解离，溶解抑制基团，以及包含其的光致抗蚀剂组合物。光致抗蚀剂组合物在保存期间高度稳定，并且可以得到截面矩形形状优异并且对曝光光，特别是波长为300nm以下的光具有高透明度的抗蚀剂图案。

69. 发明申请

US20090162788A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：新型化合物及其制造方法，酸发生器，耐蚀组合物和形成耐蚀图案的方法
公开(公告)号：US20090162788A1
公开(公告)日：2009-06-25
申请号：US12338661
申请日：2008-12-18
申请人： Hideo Hada , Yoshiyuki Utsumi , Keita Ishiduka , Kensuke Matsuzawa , Fumitake Kaneko , Kyoko Ohshita , Hiroaki Shimizu , Yasuhiro Yoshii
发明人： Hideo Hada , Yoshiyuki Utsumi , Keita Ishiduka , Kensuke Matsuzawa , Fumitake Kaneko , Kyoko Ohshita , Hiroaki Shimizu , Yasuhiro Yoshii
IPC分类号： G03F7/004 , G03F7/20 , C07C69/753 , C07C305/04
CPC分类号： C07C381/12 , C07C303/32 , C07C309/06 , C07C309/12 , C07C309/17 , C07C309/19 , C07C2603/74 , C07D333/46 , C07D493/18 , C08K5/19 , C08K5/42 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , Y10S430/111 , Y10S430/12 , Y10S430/122 , Y10S430/123
摘要： A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) consisting of a compound represented by general formula (b1-1) shown below: wherein RX represents a hydrocarbon group which may have a substituent exclusive of a nitrogen atom; each of Q2 and Q3 independently represents a single bond or a divalent linkage group; Y1 represents an alkylene group or fluorinated alkyl group of 1 to 4 carbon atoms; and Z+ represents an organic cation exclusive of an ion represented by general formula (w-1).
摘要翻译：一种抗蚀剂组合物，其包含在酸的作用下在碱性显影液中溶解度变化的碱成分（A）和曝光时产生酸的酸发生剂成分（B），所述酸发生剂成分（B）含有酸发生剂（B1）由下述通式（b1-1）表示的化合物组成：其中RX表示可以具有不包括氮原子的取代基的烃基; Q2和Q3各自独立地表示单键或二价连接基团; Y1表示1〜4个碳原子的亚烷基或氟代烷基; Z +表示除通式（w-1）表示的离子的有机阳离子。

70. 发明申请

US20090130597A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR 有权
标题翻译：抗蚀剂组合物，形成抗蚀剂图案，新型化合物和酸产生剂的方法
公开(公告)号：US20090130597A1
公开(公告)日：2009-05-21
申请号：US12265607
申请日：2008-11-05
申请人： Takehiro Seshimo , Yoshiyuki Utsumi , Akiya Kawaue , Hideo Hada , Hiroaki Shimizu , Tsuyoshi Nakamura
发明人： Takehiro Seshimo , Yoshiyuki Utsumi , Akiya Kawaue , Hideo Hada , Hiroaki Shimizu , Tsuyoshi Nakamura
IPC分类号： G03F7/031 , G03F7/20 , C07C309/04 , C07D327/04
CPC分类号： G03F7/0045 , C07D327/02 , C07D327/04 , C07D497/08 , C08K5/36 , C08K5/42 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/123
摘要： A compound represented by general formula (I); and a compound represented by general formula (b1-1). X-Q1-Y1—SO3−M+ [Chemical Formula 1] (I) X-Q1-Y1—SO3−A+ (b1-1) wherein Q1 represents a divalent linkage group or a single bond; Y1 represents an alkylene group which may have a substituent or a fluorinated alkylene group which may have a substituent; X represents a cyclic group of 3 to 30 carbon atoms which may have a substituent, and has an —SO2— bond in the structure thereof; M+ represents an alkali metal ion; and A+ represents an organic cation.
摘要翻译：由通式（I）表示的化合物; 和由通式（b1-1）表示的化合物。 <？in-line-formula description =“In-line Formulas”end =“lead”？> X-Q1-Y1-SO3-M + [化学式1] <？in-line-formula description =“ “end =”tail“？> <？in-line-formula description =”In-line formula“end =”lead“？>（I）<？in-line-formula description =”In-line Formulas“end = “tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> X-Q1-Y1-SO3-A + <？in-line-formula description =“In-line Formulas “end =”tail“？> <？in-line-formula description =”在线公式“end =”lead“？>（b1-1）<？in-line-formula description =”In-line Formulas“ end =“tail”？>其中Q1表示二价连接基团或单键; Y1表示可以具有取代基的亚烷基或可以具有取代基的氟化亚烷基; X表示可以具有取代基的3〜30个碳原子的环状基团，其结构中具有-SO 2 - 键; M +表示碱金属离子; 而A +代表有机阳离子。

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