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    • 62. 发明授权
    • Plasma processing apparatus
    • 等离子体处理装置
    • US09105450B2
    • 2015-08-11
    • US13145398
    • 2009-11-02
    • Masaki HirayamaTadahiro Ohmi
    • Masaki HirayamaTadahiro Ohmi
    • C23C16/00C23F1/00H01L21/306H01J37/32
    • H01J37/32192H01J37/32229H01J37/32238H05H1/46H05H2001/4622
    • A microwave plasma processing apparatus includes: a processing container wherein a gas is excited by microwaves and a substrate is plasma-processed; a microwave source which outputs microwaves; a transmission line through which the microwaves output from the microwave source are transmitted; a plurality of dielectric plates which are arranged on an inner surface of the processing container and emit the microwaves into the processing container; a plurality of first coaxial waveguides which are adjacent to the dielectric plates and through which the microwaves are transmitted to the dielectric plates; and a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the first coaxial waveguides. The coaxial waveguide distributor includes a second coaxial waveguide which has an input portion and 2 types of branched structures which are connected to the first coaxial waveguides and have different configurations.
    • 微波等离子体处理装置包括:处理容器,其中气体被微波激发,基板被等离子体处理; 输出微波的微波源; 传输微波从微波源输出的微波的传输线; 多个电介质板,其布置在处理容器的内表面上,并将微波放射到处理容器中; 多个第一同轴波导,与所述电介质板相邻并且所述微波通过所述多个第一同轴波导传输到所述电介质板; 以及将通过传输线传输的微波分配并传输到第一同轴波导的同轴波导分配器。 同轴波导分配器包括第二同轴波导,其具有连接到第一同轴波导并具有不同配置的输入部分和两种类型的分支结构。
    • 67. 发明授权
    • Semiconductor integrated circuit switch matrix
    • 半导体集成电路开关矩阵
    • US08551830B2
    • 2013-10-08
    • US12110800
    • 2008-04-28
    • Tadahiro OhmiKoji KotaniKazuyuki MaruoTakahiro Yamaguchi
    • Tadahiro OhmiKoji KotaniKazuyuki MaruoTakahiro Yamaguchi
    • H01L21/336H01L21/8234
    • H01L27/12H01L21/8221H01L27/0688Y10S257/903
    • There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.
    • 提供电路面积小,布线长度短的小型半导体集成电路。 半导体集成电路构造为多层结构,并且设置有第一半导体层,形成在第一半导体层中的第一半导体层晶体管,布置在第一半导体层上并且其中金属线为 形成,沉积在布线层上的第二半导体层和形成在第二半导体层中的第二半导体层晶体管。 注意,第一半导体层晶体管的栅极绝缘膜的绝缘几乎等于第二半导体层晶体管的栅极绝缘膜的绝缘,并且通过自由基氧化形成第二半导体层晶体管的栅极绝缘膜 或自由基氮化。