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61. 发明授权

US08421115B2 Semiconductor material, method of producing semiconductor material, light emitting device and light receiving device 失效
标题翻译：半导体材料，半导体材料的制造方法，发光装置和光接收装置
公开(公告)号：US08421115B2
公开(公告)日：2013-04-16
申请号：US12617104
申请日：2009-11-12
申请人： Kazushige Yamamoto , Tatsuo Shimizu
发明人： Kazushige Yamamoto , Tatsuo Shimizu
IPC分类号： H01L33/16 , H01L31/0256
CPC分类号： H01L31/0352 , H01L21/26506 , H01L29/12 , H01L33/0054 , H01L33/18 , H01L33/34
摘要： A semiconductor material includes a matrix semiconductor includes constituent atoms bonded to each other into a tetrahedral bond structure, and a heteroatom Z doped to the matrix semiconductor, in which the heteroatom Z is inserted in a bond so as to form a bond-center structure with an stretched bond length, and the bond-center structure is contained in a proportion of 1% or more based on the heteroatom Z.
摘要翻译：半导体材料包括矩阵半导体，其包括彼此键合成四面体键结构的构成原子和掺杂到基体半导体的杂原子Z，其中杂原子Z插入键以形成键中心结构，拉伸的键长度，并且键 - 中心结构以基于杂原子Z的1％或更多的比例包含。

62. 发明申请

US20120326244A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120326244A1
公开(公告)日：2012-12-27
申请号：US13554204
申请日：2012-07-20
申请人： Masamichi SUZUKI , Tatsuo Shimizu , Atsuhiro Kinoshita
发明人： Masamichi SUZUKI , Tatsuo Shimizu , Atsuhiro Kinoshita
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L29/785 , H01L21/02178 , H01L21/02192 , H01L21/02194 , H01L21/02266 , H01L21/28194 , H01L21/28273 , H01L21/28282 , H01L21/823821 , H01L21/823842 , H01L21/823857 , H01L28/40 , H01L29/517 , H01L29/7833 , H01L29/7881
摘要： A semiconductor device includes a semiconductor substrate, a source region, a drain region, an insulating film and a gate electrode. The source region is formed in the semiconductor substrate. The drain region is formed in the semiconductor substrate with being separate from the source region. The insulating film is formed between the source region and the drain region and on or above the semiconductor substrate. The insulating film includes lanthanum aluminate containing at least one element selected from Si, Ge, Mg, Ca, Sr, Ba and N. The lanthanum aluminate contains at least one element selected from Ti, Hf and Zr. The gate electrode is formed on the insulating film.
摘要翻译：半导体器件包括半导体衬底，源极区，漏极区，绝缘膜和栅电极。源区域形成在半导体衬底中。漏区形成在半导体衬底中，与源极区分开。绝缘膜形成在源极区域和漏极区域之间并且在半导体衬底上或上方。绝缘膜包括含有选自Si，Ge，Mg，Ca，Sr，Ba和N中的至少一种元素的铝酸镧铝。铝酸镧含有选自Ti，Hf和Zr中的至少一种元素。栅电极形成在绝缘膜上。

63. 发明授权

US07977693B2 Semiconductor light-emitting material with tetrahedral structure formed therein 有权
标题翻译：在其中形成四面体结构的半导体发光材料
公开(公告)号：US07977693B2
公开(公告)日：2011-07-12
申请号：US11531426
申请日：2006-09-13
申请人： Tatsuo Shimizu , Kazushige Yamamoto , Shigeru Haneda
发明人： Tatsuo Shimizu , Kazushige Yamamoto , Shigeru Haneda
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H01L27/1443 , H01L31/153 , H01S5/0207 , H01S5/0261 , H01S5/0262 , H01S5/028 , H01S5/18311 , H01S5/18369 , H01S5/22 , H01S5/305 , H01S5/3054 , H01S5/3201 , H01S5/3224 , H01S5/423
摘要： A semiconductor light-emitting material includes a semiconductor substance including a matrix semiconductor whose constituent atoms are bonded to form a tetrahedral structure, an impurity atom S substituted for an atom in a lattice site of the matrix semiconductor, and an impurity atom I inserted in a interstitial site of the matrix semiconductor, the impurity atom S and the impurity atom I being bonded through charge transfer therebetween in a state that the impurity atom S has an electric charge coincident with that of the constituent atom of the matrix semiconductor and the impurity atom I has an electron configuration of a closed shell structure, in which the semiconductor substance is stretched in a direction of a bond forming the tetrahedral structure.
摘要翻译：半导体发光材料包括半导体物质，其包含其组成原子键合以形成四面体结构的基质半导体，取代基质半导体的晶格位置中的原子的杂质原子S和插入到基质半导体中的杂质原子I 在杂质原子S的电荷与矩阵半导体的构成原子的电荷一致的状态下，杂质原子S和杂质原子I通过电荷转移而键合的杂质原子I和杂质原子I 具有闭合壳结构的电子构造，其中半导体物质沿形成四面体结构的键的方向被拉伸。

64. 发明申请

US20110032486A1 PROJECTOR AND METHOD FOR MANUFACTURING PROJECTOR 有权
标题翻译：投影机和制造投影机的方法
公开(公告)号：US20110032486A1
公开(公告)日：2011-02-10
申请号：US12851828
申请日：2010-08-06
申请人： Akira Egawa , Kuname Nagatani , Kunihiko Takagi , Tatsuo Shimizu
发明人： Akira Egawa , Kuname Nagatani , Kunihiko Takagi , Tatsuo Shimizu
IPC分类号： G03B21/16 , B23P19/04
CPC分类号： G03B21/16 , G03B21/145 , G03B21/2073 , H04N9/3105 , H04N9/3144 , Y10T29/49826
摘要： A projector includes: a spatial light modulator provided for each color light flux and configured to modulate the light flux in accordance with an image signal; a light combining system configured to combine the color light flux outputted from the spatial light modulator; a projection system configured to project the light combined by the light combining system; a fixing member configured to integrally fix the spatial light modulator, the light combining system, and the projection system; a base on which the spatial light modulators and the light combining system fixed to the fixing member are mounted; and a cover member configured to cover the spatial light modulator and the light combining system mounted on the base, wherein the base and the cover member form a cooling duct through which cooling air for sequentially cooling the spatial light modulator for the respective color light flux flows.
摘要翻译：投影仪包括：空间光调制器，其针对每个颜色光束提供并被配置为根据图像信号调制光通量; 配置为组合从空间光调制器输出的彩色光束的光合成系统; 投影系统，被配置为投射由所述光合成系统组合的光; 固定构件，被构造成一体地固定所述空间光调制器，所述光合成系统和所述投影系统; 其上安装有固定在固定部件上的空间光调制器和光合成系统的基座; 以及盖构件，其被构造成覆盖安装在所述基座上的所述空间光调制器和所述光合成系统，其中所述基座和所述盖构件形成冷却管道，通过所述冷却管道顺序冷却所述空间光调制器用于各个颜色光通量流的冷却空气。

65. 发明申请

US20100329381A1 SIGNAL PROCESSING APPARATUS, INFORMATION PROCESSING APPARATUS, MULTILEVEL CODING METHOD, AND DATA TRANSMISSION METHOD 失效
标题翻译：信号处理装置，信息处理装置，多编码方法和数据传输方法
公开(公告)号：US20100329381A1
公开(公告)日：2010-12-30
申请号：US12784026
申请日：2010-05-20
申请人： Tatsuo Shimizu , Takehiro Sugita
发明人： Tatsuo Shimizu , Takehiro Sugita
IPC分类号： H04L25/49
CPC分类号： H04L7/0008 , H04L7/06
摘要： Provided is a signal processing apparatus including an encoder for encoding, according to respective specific coding schemes, a first bit string formed from bit values at odd-numbered positions and a second bit string formed from bit values at even-numbered positions that are obtained by alternately extracting bit values from a bit string that is expressed by mutually different first and second bit values, and generating first and second encoded signals that do not include a DC component, and a signal generation unit for generating a multilevel signal by respectively adding, to a clock signal having larger amplitude than the first and second encoded signals that are generated by the encoder, the first encoded signal in synchronization with a timing of the clock signal being at a positive amplitude value and the second encoded signal in synchronization with a timing of the clock signal being at a negative amplitude value.
摘要翻译：提供了一种信号处理装置，包括编码器，根据各自的特定编码方案，编码由奇数位置的比特值形成的第一比特串，以及由偶数位置的比特值形成的第二比特串，交替地从由相互不同的第一和第二比特值表示的比特串中提取比特值，以及生成不包括DC分量的第一和第二编码信号;以及信号生成单元，用于通过分别将具有比由编码器产生的第一和第二编码信号大的振幅的时钟信号，与时钟信号的定时同步的第一编码信号处于正振幅值，并且第二编码信号与时钟信号处于负振幅值。

66. 发明授权

US07705400B2 Semiconductor device using Filled Tetrahedral semiconductor 有权
标题翻译：使用填充四面体半导体的半导体器件
公开(公告)号：US07705400B2
公开(公告)日：2010-04-27
申请号：US11837932
申请日：2007-08-13
申请人： Tatsuo Shimizu , Kazushige Yamamoto
发明人： Tatsuo Shimizu , Kazushige Yamamoto
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392
CPC分类号： H01L21/26506 , H01L21/26513 , H01L21/2658 , H01L21/823807 , H01L21/84 , H01L29/105 , H01L29/1054 , H01L29/66545 , H01L29/7842 , H01L29/78681 , H01L29/78684
摘要： A semiconductor device provided with a filled tetrahedral semiconductor is formed by introducing impurity atoms S for substituting the component atoms of sites of lattice points and impurity atoms I to be inserted into interstitial sites of a host semiconductor where component atoms are bonded to form a tetrahedral bonding structure. Such a semiconductor device is made to show a high mobility level and a high current drive force as a semiconductor substance where impurity atoms S are made to have a valance electron agreeing with that of the component atoms of the host semiconductor as a result of charge transfer between impurity atoms S and impurity atoms I and impurity atoms I are bonded in a state of showing an electronic arrangement of a closed shell structure is used as channel material.
摘要翻译：设置有填充的四面体半导体的半导体器件通过引入杂质原子S来形成，用于将待插入组分原子键合的主体半导体的间隙位置的晶格点和杂质原子I的组分原子代替以形成四面体键合结构体。使这样的半导体器件显示作为半导体物质的高迁移率水平和高电流驱动力，其中杂质原子S由于电荷转移而具有与主体半导体的成分原子一致的价电子杂质原子S与杂质原子I之间的杂质原子I与封闭壳结构的电子配置的状态下的键合用作沟道材料。

67. 发明申请

US20090200616A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090200616A1
公开(公告)日：2009-08-13
申请号：US12370641
申请日：2009-02-13
申请人： Tatsuo Shimizu , Masato Koyama
发明人： Tatsuo Shimizu , Masato Koyama
IPC分类号： H01L29/78
CPC分类号： H01L21/823857 , H01L21/823821 , H01L21/823842 , H01L27/1203 , H01L29/785
摘要： According to one embodiment, it is possible to provide a semiconductor device provided with an MIS transistor which has an effective work function being, as much as possible, suitable for low threshold operation. A CMIS device provided with an electrode having an optimal effective work function and enabling low threshold operation to achieve by producing an in-gap level by the addition of a high valence metal in an Hf (or Zr) oxide and changing a position of the in-gap level by nitrogen or fluorine or the like has been realized.
摘要翻译：根据一个实施例，可以提供一种设置有MIS晶体管的半导体器件，该半导体器件具有尽可能多的适合于低阈值操作的有效功函数。具有电极的CMIS器件具有最佳的有效功函数，并且能够通过在Hf（或Zr）氧化物中添加高价金属而产生空隙间电平来实现低阈值操作，从而改变位于通过氮或氟等的差异水平已经实现。

68. 发明申请

US20090014817A1 INSULATING FILM AND ELECTRONIC DEVICE 有权
标题翻译：绝缘膜和电子器件
公开(公告)号：US20090014817A1
公开(公告)日：2009-01-15
申请号：US12135919
申请日：2008-06-09
申请人： Tatsuo Shimizu , Hideki Satake
发明人： Tatsuo Shimizu , Hideki Satake
IPC分类号： H01L29/00
CPC分类号： H01L21/28185 , B82Y10/00 , H01L21/02148 , H01L21/02156 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02192 , H01L21/02197 , H01L21/022 , H01L21/02244 , H01L21/02255 , H01L21/02271 , H01L21/02293 , H01L21/02337 , H01L21/28194 , H01L21/28291 , H01L21/3142 , H01L21/3147 , H01L21/3162 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L28/56 , H01L29/122 , H01L29/152 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/78
摘要： An electronic device including a semiconductor layer having silicon as a major component; and a dielectric film epitaxially grown directly on a major surface of the semiconductor layer, wherein the dielectric film consists of a dielectric material having a Ruddlesden-Popper type structure, the Ruddlesden-Popper type structure is expressed by a chemical formula An+1BnO3n+1, the element A including at least one selected from a group consisting of Ba, Sr, Ca and Mg, a percentage of Mg content in the element A is not larger than 10%, and the element B includes at least one selected from a group consisting of Ti, Zr and Hf.
摘要翻译：一种电子器件，包括以硅为主要成分的半导体层; 以及直接在半导体层的主表面上外延生长的电介质膜，其中介电膜由具有Ruddlesden-Popper型结构的介电材料组成，Ruddlesden-Popper型结构由化学式An + 1BnO3n + 1表示包含选自Ba，Sr，Ca和Mg中的至少一种的元素A，元素A中的Mg含量的百分比不大于10％，并且元素B包括选自基团由Ti，Zr和Hf组成。

69. 发明授权

US07405451B2 Semiconductor device including MIS transistors 失效
标题翻译：半导体器件包括MIS晶体管
公开(公告)号：US07405451B2
公开(公告)日：2008-07-29
申请号：US11020275
申请日：2004-12-27
申请人： Tatsuo Shimizu , Takeshi Yamaguchi , Yukie Nishikawa
发明人： Tatsuo Shimizu , Takeshi Yamaguchi , Yukie Nishikawa
IPC分类号： H01L21/8234
CPC分类号： H01L21/28194 , H01L21/28202 , H01L21/823842 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： The present invention is to obtain an MIS transistor which allows considerable reduction in threshold fluctuation for each transistor and has a low threshold voltage. First gate electrode material for nMIS and second gate electrode material for pMIS can be mutually converted to each other, so that a process can be simplified. Such a fact that a dependency of a work function on a doping amount is small is first disclosed, so that fluctuation in threshold voltage for each transistor hardly occurs.
摘要翻译：本发明是为了获得允许每个晶体管的阈值波动显着降低并且具有低阈值电压的MIS晶体管。用于nMIS的第一栅电极材料和用于pMIS的第二栅极电极材料可以相互转换，从而可以简化工艺。首先公开了功函数对掺杂量的依赖性小的事实，因此几乎不发生各晶体管的阈值电压的波动。

70. 发明授权

US07115953B2 Semiconductor device and method of manufacturing semiconductor device 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07115953B2
公开(公告)日：2006-10-03
申请号：US11049661
申请日：2005-02-04
申请人： Tatsuo Shimizu , Takeshi Yamaguchi , Yukie Nishikawa
发明人： Tatsuo Shimizu , Takeshi Yamaguchi , Yukie Nishikawa
IPC分类号： H01L29/72
CPC分类号： H01L29/513 , H01L21/02123 , H01L21/02142 , H01L21/022 , H01L21/28194 , H01L21/31604 , H01L21/31641 , H01L21/31645 , H01L21/31691 , H01L29/4966 , H01L29/51 , H01L29/517
摘要： A semiconductor device includes a semiconductor substrate containing Si as a main component, and an active element formed on the semiconductor substrate and including an insulating metal silicide thin film formed on the semiconductor substrate, dangling bonds of Si of the semiconductor substrate being terminated by the insulating metal silicide thin film.
摘要翻译：半导体器件包括以Si为主要成分的半导体衬底和形成在半导体衬底上的有源元件，并且包括形成在半导体衬底上的绝缘金属硅化物薄膜，半导体衬底的Si与绝缘体端接的悬挂键金属硅化物薄膜。

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