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61. 发明授权

US6122241A Optical pick-up device for processing central and peripheral optical signal components 失效
标题翻译：用于处理中央和外围光信号部件的光拾取装置
公开(公告)号：US6122241A
公开(公告)日：2000-09-19
申请号：US593903
申请日：1996-01-30
申请人： Hiroshi Akiyama , Masahiko Nakayama
发明人： Hiroshi Akiyama , Masahiko Nakayama
IPC分类号： G11B7/12 , G11B7/13 , G11B7/135 , G11B7/08
CPC分类号： G11B7/131 , G11B7/123 , G11B7/133 , G11B7/1353 , G11B7/1356 , G11B7/1359 , G11B7/1381
摘要： An optical pick-up device for at least one of recording, reproducing and deleting data on a recording medium includes a light source emitting a light, an objective lens focusing the light from the light source at a predetermined position of a data track of the recording medium and a light receiving element detecting a reflected light from the recording medium. A light receiving means divides the reflected light from the recording medium in a data track direction and detects a part of the reflected light. The reflected light is divided onto the light receiving element into a central component and peripheral components and an original signal is reproduced from at least one of a difference between the peripheral components and the difference between the peripheral components and a central component.
摘要翻译：用于在记录介质上记录，再现和删除数据中的至少一个的光学拾取装置包括发射光的光源，将来自光源的光聚焦在记录的数据轨道的预定位置处的物镜介质和光接收元件，其检测来自记录介质的反射光。光接收装置在数据轨道方向上分割来自记录介质的反射光并检测部分反射光。反射光被分成光接收元件，成为中心部件，外围部件和原始信号从周边部件之间的差异和周边部件与中心部件之间的差异中的至少一个再现。

62. 发明授权

US4815059A Temperature-compensated optical pick-up device 失效
标题翻译：温度补偿光学拾取装置
公开(公告)号：US4815059A
公开(公告)日：1989-03-21
申请号：US15115
申请日：1987-02-17
申请人： Masahiko Nakayama , Hiroshi Goto
发明人： Masahiko Nakayama , Hiroshi Goto
IPC分类号： G11B7/09 , G11B7/12 , G11B7/125 , G11B7/135 , H01S3/00 , G11B7/00
CPC分类号： G11B7/0916 , G11B7/1376 , G11B7/13922 , G11B2007/13727 , H01S3/005
摘要： A semiconductor laser device includes a semiconductor laser for emitting a laser beam, a coupling lens for collimating the laser beam as passing therethrough and a supporting member for supporting the laser and the coupling lens. As the ambient temperature changes, the supporting member either expands or contracts, thereby varying the distance between the laser and the coupling lens. However, it is so structured that the focal distance of the coupling lens varies in accordance with a change in the wavelength of the laser beam emitted from the laser which is caused by the change in the ambient temperature, so that the change in the distance between the laser and the coupling lens is effectively cancelled by the change in the focal distance of the coupling lens, whereby the laser beam passing through the coupling lens remains collimated even if the ambient temperature changes.
摘要翻译：半导体激光装置包括用于发射激光束的半导体激光器，用于准直激光束的耦合透镜，以及用于支撑激光器和耦合透镜的支撑部件。随着环境温度的变化，支撑构件膨胀或收缩，从而改变激光与耦合透镜之间的距离。然而，其结构使得耦合透镜的焦距根据由环境温度的变化引起的从激光器发射的激光束的波长的变化而变化，使得距离通过耦合透镜的焦距的变化有效地消除了激光和耦合透镜，由此即使环境温度改变，通过耦合透镜的激光束保持准直。

63. 发明授权

US09299410B2 Reading magnetic memory based on regions within a cell array 有权
标题翻译：基于单元阵列内的区域读取磁记忆体
公开(公告)号：US09299410B2
公开(公告)日：2016-03-29
申请号：US14201613
申请日：2014-03-07
申请人： Shintaro Sakai , Masahiko Nakayama
发明人： Shintaro Sakai , Masahiko Nakayama
IPC分类号： G11C11/16
CPC分类号： G11C11/1673 , G11C11/161 , G11C11/1653 , G11C11/1655 , G11C11/1657 , G11C11/1695
摘要： According to one embodiment, a magnetic memory includes a cell array includes a plurality of memory cells, each memory cell including a magnetoresistive effect element; and a read circuit to read data from a memory cell selected based on an address signal from among the memory cells. The read circuit selects one determination level from among a plurality of determination levels corresponding to a position of a magnetoresistive effect element in the cell array and uses the selected determination level to perform reading of the data.
摘要翻译：根据一个实施例，磁存储器包括具有多个存储单元的单元阵列，每个存储单元包括磁阻效应元件; 以及读取电路，用于从存储单元中基于地址信号选择的存储单元读取数据。读取电路从与单元阵列中的磁阻效应元件的位置对应的多个判定电平中选择一个判定电平，并使用所选择的判定电平进行数据的读取。

64. 发明授权

US09184374B2 Magnetoresistive element 有权
标题翻译：磁阻元件
公开(公告)号：US09184374B2
公开(公告)日：2015-11-10
申请号：US13963762
申请日：2013-08-09
申请人： Kazuya Sawada , Toshihiko Nagase , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Masahiko Nakayama , Tadashi Kai , Hiroaki Yoda
发明人： Kazuya Sawada , Toshihiko Nagase , Youngmin Eeh , Koji Ueda , Daisuke Watanabe , Masahiko Nakayama , Tadashi Kai , Hiroaki Yoda
IPC分类号： H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/08 , H01L43/10
摘要： According to one embodiment, a magnetoresistive element includes first, second and third magnetic layers, and first and second nonmagnetic layers. The third magnetic layer has stack layers including a first stack layer close to the second magnetic layer, and a second stack layer far from the second magnetic layer. Each of the first and second stack layers includes a first layer made of a ferromagnetic material and a second layer made of a nonmagnetic material, and a first ratio of a film thickness of the first layer to that of the second layer in the first stack layer is higher than a second ratio of a film thickness of the first layer to that of the second layer in the second stack layer.
摘要翻译：根据一个实施例，磁阻元件包括第一，第二和第三磁性层以及第一和第二非磁性层。第三磁性层具有包括靠近第二磁性层的第一堆叠层和远离第二磁性层的第二堆叠层的堆叠层。第一和第二堆叠层中的每一个包括由铁磁材料制成的第一层和由非磁性材料制成的第二层，并且第一层的第一层的膜厚度与第二层的膜厚度的第一比率高于第二层的第一层的膜厚度与第二层的膜厚度的第二比率。

65. 发明申请

US20130099337A1 MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁记忆元件和磁记忆
公开(公告)号：US20130099337A1
公开(公告)日：2013-04-25
申请号：US13604386
申请日：2012-09-05
申请人： Masahiko Nakayama , Hisanori Aikawa , Masaru Toko , Hiroaki Yoda , Tatsuya Kishi , Sumio Ikegawa
发明人： Masahiko Nakayama , Hisanori Aikawa , Masaru Toko , Hiroaki Yoda , Tatsuya Kishi , Sumio Ikegawa
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic memory element includes a memory layer, a first nonmagnetic layer, a reference layer, a second nonmagnetic layer, and an adjustment layer which are stacked. The adjustment layer is configured to reduce a leakage magnetic field from the reference layer. The adjustment layer is formed by stacking an interface layer provided on the second nonmagnetic layer, and a magnetic layer having magnetic anisotropy perpendicular to a film surface. Saturation magnetization of the interface layer is larger than that of the magnetic layer.
摘要翻译：根据一个实施例，磁存储元件包括堆叠的存储器层，第一非磁性层，参考层，第二非磁性层和调整层。调整层被配置为减少来自参考层的泄漏磁场。调整层通过层叠设置在第二非磁性层上的界面层和垂直于膜表面的具有磁各向异性的磁性层而形成。界面层的饱和磁化强度大于磁性层的饱和磁化强度。

66. 发明申请

US20120241884A1 MAGNETIC MEMORY 有权
标题翻译：磁记忆
公开(公告)号：US20120241884A1
公开(公告)日：2012-09-27
申请号：US13432486
申请日：2012-03-28
申请人： Hisanori AIKAWA , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Naoharu Shimomura , Eiji Kitagawa , Tatsuya Kishi , Jyunichi Ozeki , Hiroaki Yoda , Satoshi Yanagi
发明人： Hisanori AIKAWA , Tadashi Kai , Masahiko Nakayama , Sumio Ikegawa , Naoharu Shimomura , Eiji Kitagawa , Tatsuya Kishi , Jyunichi Ozeki , Hiroaki Yoda , Satoshi Yanagi
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228
摘要： According to one embodiment, a magnetic memory includes a magnetoresistive element. The magnetoresistive element includes a reference layer having an invariable magnetization direction, a storage layer having a variable magnetization direction, and a spacer layer provided between the reference layer and the storage layer. The storage layer has a multilayered structure including first and second magnetic layers, the second magnetic layer is provided between the first magnetic layer and the spacer layer and has a magnetic anisotropy energy lower than that of the first magnetic layer, and an exchange coupling constant Jex between the first magnetic layer and the second magnetic layer is not more than 5 erg/cm2.
摘要翻译：根据一个实施例，磁存储器包括磁阻元件。磁阻元件包括具有不变磁化方向的参考层，具有可变磁化方向的存储层和设置在参考层和存储层之间的间隔层。存储层具有包括第一和第二磁性层的多层结构，第二磁性层设置在第一磁性层和间隔层之间，其磁各向异性能量低于第一磁性层的磁各向异性能，交换耦合常数Jex 第一磁性层和第二磁性层之间的距离不大于5erg / cm2。

67. 发明授权

US08036025B2 Magnetoresistive element 有权
标题翻译：磁阻元件
公开(公告)号：US08036025B2
公开(公告)日：2011-10-11
申请号：US12686168
申请日：2010-01-12
申请人： Toshihiko Nagase , Masatoshi Yoshkawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
发明人： Toshihiko Nagase , Masatoshi Yoshkawa , Eiji Kitagawa , Masahiko Nakayama , Tadashi Kai , Tatsuya Kishi , Hiroaki Yoda
IPC分类号： H01L43/00
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01L43/08
摘要： A magnetoresistive element which records information by supplying spin-polarized electrons to a magnetic material, includes a first pinned layer which is made of a magnetic material and has a first magnetization directed in a direction perpendicular to a film surface, a free layer which is made of a magnetic material and has a second magnetization directed in the direction perpendicular to the film surface, the direction of the second magnetization reversing by the spin-polarized electrons, and a first nonmagnetic layer which is provided between the first pinned layer and the free layer. A saturation magnetization Ms of the free layer satisfies a relationship 0≦Ms
摘要翻译：通过向磁性材料提供自旋极化电子来记录信息的磁阻元件包括由磁性材料制成并且具有沿与膜表面垂直的方向的第一磁化的第一固定层，制成的自由层并且具有在垂直于膜表面的方向上的第二磁化强度，由自旋极化电子反转的第二磁化方向以及设置在第一被钉扎层和自由层之间的第一非磁性层。自由层的饱和磁化强度Ms满足关系0＆nlE; Ms <√{平方根超过（）} {Jw /（6＆pgr; At）}。 Jw是写入电流密度，t是自由层的厚度，A是常数。

68. 发明申请

US20110228596A1 SPIN MEMORY AND SPIN TRANSISTOR 有权
标题翻译：旋转记忆和旋转晶体管
公开(公告)号：US20110228596A1
公开(公告)日：2011-09-22
申请号：US12885833
申请日：2010-09-20
申请人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Hisanori Aikawa , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
发明人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Hisanori Aikawa , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
IPC分类号： G11C11/15 , H01L29/82
CPC分类号： H01L29/66984 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1697 , H01L27/224 , H01L43/08
摘要： Certain embodiments provide a spin memory including a memory cell including a ferromagnetic stacked film that has a stacked structure in which a first ferromagnetic layer, a first nonmagnetic layer, a second ferromagnetic layer, a second nonmagnetic layer, and a third ferromagnetic layer are stacked in this order or reverse order, the third ferromagnetic layer and the second ferromagnetic layer being antiferromagnetically exchange-coupled via the second nonmagnetic layer. The ferromagnetic stacked film includes a current path in which a first and second write currents flow from the first ferromagnetic layer to the third ferromagnetic layer to write a first and second magnetization states into the first ferromagnetic layer respectively, and the second write current is higher than the first write current.
摘要翻译：某些实施例提供一种自旋存储器，其包括一个存储单元，该存储单元包括一个具有层叠结构的铁磁层叠膜，其中第一铁磁层，第一非磁性层，第二铁磁层，第二非磁性层和第三铁磁层堆叠在其中该顺序或反向顺序，第三铁磁层和第二铁磁层经由第二非磁性层反铁磁交换耦合。铁磁层叠膜包括电流路径，其中第一和第二写入电流从第一铁磁层流向第三铁磁层，以将第一和第二磁化状态分别写入第一铁磁层，并且第二写入电流高于第一次写入电流。

69. 发明授权

US08023386B2 Optical pickup apparatus and optical disk drive apparatus 有权
标题翻译：光学拾取装置和光盘驱动装置
公开(公告)号：US08023386B2
公开(公告)日：2011-09-20
申请号：US12071480
申请日：2008-02-21
申请人： Masahiko Nakayama , Hiroshi Akiyama
发明人： Masahiko Nakayama , Hiroshi Akiyama
IPC分类号： G11B7/00
CPC分类号： G11B7/133 , G11B7/0943 , G11B7/123 , G11B7/131 , G11B7/1353 , G11B7/1365 , G11B7/1395 , G11B2007/0013 , G11B2007/13727
摘要： An optical pickup apparatus for reproducing information from an optical disk, includes: a semiconductor laser applying a beam to an optical disk having two recording layers through an objective lens; and a light receiving device to which light reflected from the optical disk is directed through the objective lens and a beam splitting device, wherein: the beam splitting device has two first light receiving areas for detecting a push-pull signal and a second light receiving area for detecting a focus error signal, and a configuration is provided such that the center of the optical axis of the reflected light in the beam splitting device is made to lie within the second light receiving area for detecting the focus error signal.
摘要翻译：一种用于从光盘再现信息的光学拾取装置，包括：通过物镜将光束施加到具有两个记录层的光盘的半导体激光器; 以及从光盘反射的光被引导通过物镜的光接收装置和分束装置，其中：分束装置具有用于检测推挽信号和第二光接收区域的两个第一光接收区域用于检测聚焦误差信号，并且配置使得分束装置中的反射光的光轴的中心位于用于检测聚焦误差信号的第二光接收区域内。

70. 发明授权

US08014193B2 Magnetoresistance effect element and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US08014193B2
公开(公告)日：2011-09-06
申请号：US12396778
申请日：2009-03-03
申请人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Hiroaki Yoda , Tatsuya Kishi
发明人： Masahiko Nakayama , Tadashi Kai , Sumio Ikegawa , Hiroaki Yoda , Tatsuya Kishi
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1675 , H01L27/226
摘要： A magnetoresistance effect element includes: a first ferromagnetic layer having invariable magnetization perpendicular to a film plane; a second ferromagnetic layer having variable magnetization perpendicular to the film plane; a first nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer on an opposite side of the second ferromagnetic layer from the first nonmagnetic layer, and having variable magnetization parallel to the film plane; and a second nonmagnetic layer interposed between the second and third ferromagnetic layers. Spin-polarized electrons are injected into the second ferromagnetic layer by flowing a current in the direction perpendicular to the film planes between the first and third ferromagnetic layers, precession movement is induced in the magnetization of the third ferromagnetic layer by injecting the spin-polarized electrons, and a microwave magnetic field of a frequency corresponding to the precession movement is applied to the second ferromagnetic layer.
摘要翻译：磁阻效应元件包括：具有垂直于膜平面的不变磁化的第一铁磁层; 具有垂直于膜平面的可变磁化的第二铁磁层; 介于所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 在第二铁磁层与第一非磁性层相反的一侧的第三铁磁层，并且具有平行于膜平面的可变磁化强度; 以及插入在第二和第三铁磁层之间的第二非磁性层。通过在垂直于第一和第三铁磁层之间的膜平面的方向上流动电流，将旋转极化电子注入到第二铁磁层中，通过注入自旋极化电子在第三铁磁层的磁化中引起进动运动并且将对应于进动运动的频率的微波磁场施加到第二铁磁层。

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