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61. 发明专利

JP2010118702A Nitride semiconductor light-emitting device 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：JP2010118702A
公开(公告)日：2010-05-27
申请号：JP2010040469
申请日：2010-02-25
申请人： Sharp Corp , シャープ株式会社
发明人： ONO TOMOTERU , ITO SHIGETOSHI , OKUMURA TOSHIYUKI , MORI YUICHI , MATSUDA KYOKO , KAWAKAMI TOSHIYUKI , KAMIKAWA TAKESHI , TANI YOSHIHIKO
IPC分类号： H01S5/065 , H01L33/32 , H01L33/38 , H01S5/042 , H01S5/06 , H01S5/323
CPC分类号： H01L33/38 , H01L33/32 , H01S5/0425 , H01S5/0602 , H01S5/0658 , H01S5/32341
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting device, having a self-excited oscillation characteristic free from a heat hysteresis during growth and stable and superior in its optical output. SOLUTION: The nitride semiconductor light-emitting device includes at least a substrate, an active layer composed of a nitride semiconductor mainly containing In and Ga, a p-electrode, and an n-electrode, wherein at least one of the p-electrode and the n-electrode is electrically divided into two or more regions. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种氮化物半导体发光器件，其具有在生长期间不具有热滞后的自激振荡特性，并且其光输出稳定且优异。解决方案：氮化物半导体发光器件至少包括衬底，由主要包含In和Ga的氮化物半导体，p电极和n电极组成的有源层，其中p 电极，并且n电极被电分成两个或更多个区域。版权所有（C）2010，JPO＆INPIT

62. 发明专利

JP2010021271A Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：JP2010021271A
公开(公告)日：2010-01-28
申请号：JP2008179190
申请日：2008-07-09
申请人： Sharp Corp , シャープ株式会社
发明人： OTA MASATAKA , ITO SHIGETOSHI , TSUDA YUZO , VACCARO PABLO , TAKAHASHI KOJI
IPC分类号： H01S5/343 , H01S5/042
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0207 , H01S5/22 , H01S5/2231 , H01S5/2232
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element for achieving low nitride semiconductor laser element resistance and having a wide wavelength range of the adapted laser beam. SOLUTION: The nitride semiconductor laser element includes: an n-type nitride semiconductor layer; a nitride semiconductor active layer formed on the n-type nitride semiconductor layer; and an upper transparent conductive film formed on the nitride semiconductor active layer. The nitride semiconductor active layer includes a nitride semiconductor well layer containing indium, and a nitride semiconductor barrier layer, and at least a part of the surface on the opposite side of the installation side of the nitride semiconductor active layer of the upper transparent conductive film is in contact with a gas or a transparent dielectric film. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于实现低氮化物半导体激光元件电阻并且具有适合的激光束的宽波长范围的氮化物半导体激光元件。解决方案：氮化物半导体激光元件包括：n型氮化物半导体层; 形成在所述n型氮化物半导体层上的氮化物半导体有源层; 以及形成在氮化物半导体活性层上的上部透明导电膜。氮化物半导体有源层包括含有铟的氮化物半导体阱层和氮化物半导体势垒层，上部透明导电膜的氮化物半导体有源层的安装侧的相反侧的表面的至少一部分为与气体或透明电介质膜接触。版权所有（C）2010，JPO＆INPIT

63. 发明专利

JP2009182347A Nitride semiconductor light-emitting element and manufacturing method thereof 有权
标题翻译：氮化物半导体发光元件及其制造方法
公开(公告)号：JP2009182347A
公开(公告)日：2009-08-13
申请号：JP2009119605
申请日：2009-05-18
申请人： Sharp Corp , シャープ株式会社
发明人： TSUDA YUZO , UEDA YOSHIHIRO , YUASA TAKAYUKI , ITO SHIGETOSHI
IPC分类号： H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element improving light-emitting efficiency and having low threshold current density.
SOLUTION: The nitride semiconductor light-emitting element includes an n-type GaN light guide layer 14, a light-emitting layer 15 and a p-type AlGaN carrier block layer 16, wherein the light-emitting layer 15 includes a barrier layer 30a, a well layer 31, a barrier layer 30b, a well layer 31, a barrier layer 30b, a well layer 31 and a barrier layer 30c which are laminated in this order. The light-emitting element has a configuration in which the well layer 31 is an InGaN layer in which an impurity is not doped, at least the barrier layer 30b sandwiched by the well layers 31 contains an InGaN layer 33b having an In composition ratio different from that of the well layer 31, and an GaN layer 32b, the InGaN layer 33b contacts the one well layer 31 and the GaN layer 32b contacts the other well layer.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种提高发光效率并具有低阈值电流密度的氮化物半导体发光元件。解决方案：氮化物半导体发光元件包括n型GaN光导层14，发光层15和p型AlGaN载流子阻挡层16，其中发光层15包括屏障层30a，阱层31，势垒层30b，阱层31，势垒层30b，阱层31和势垒层30c。发光元件具有这样的构造，其中阱层31是不掺杂杂质的InGaN层，至少被阱层31夹持的势垒层30b含有In组成比不同的InGaN层33b 阱层31和GaN层32b的InGaN层33b接触一个阱层31，并且GaN层32b与另一个阱层接触。版权所有（C）2009，JPO＆INPIT

64. 发明专利

JP2009105466A Nitride semiconductor wafer, and method for manufacturing of nitride semiconductor element 有权
标题翻译：氮化物半导体器件和氮化物半导体元件的制造方法
公开(公告)号：JP2009105466A
公开(公告)日：2009-05-14
申请号：JP2009032217
申请日：2009-02-16
申请人： Sharp Corp , シャープ株式会社
发明人： KAWAKAMI TOSHIYUKI , YAMAZAKI YUKIO , ITO SHIGETOSHI , OMI SUSUMU
IPC分类号： H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor element formed by being divided so as to be flat in a resonator end face. SOLUTION: When an LD structure 251 is constituted on a GaN-based substrate 250, cleavage introduction grooves 252 are formed by being scribed by a diamond-edge blade from the surface of the LD structure 251. The cleavage introduction grooves 252 are formed between stripe-shaped optical waveguides 253 which are formed in parallel to the direction of [1-100]-orientation of a wafer, and the grooves 252 are formed in shapes of dashed lines in the direction of [11-20]-orientation of the wafer. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过在谐振器端面中被分割成扁平而形成的氮化物半导体元件。解决方案：当在GaN基基板250上构造LD结构251时，通过由LD结构251的表面由金刚石边缘刮刀划刻而形成裂缝引入槽252.裂缝引入槽252 形成在平行于晶片的[1-100]取向方向形成的条状光波导253之间，并且凹槽252以[11-20] - 取向方向形成为虚线的形状的晶片。版权所有（C）2009，JPO＆INPIT

65. 发明专利

JP2009094141A Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：JP2009094141A
公开(公告)日：2009-04-30
申请号：JP2007260960
申请日：2007-10-04
申请人： Sharp Corp , シャープ株式会社
发明人： KAWAGUCHI YOSHINOBU , KAMIKAWA TAKESHI , ITO SHIGETOSHI
IPC分类号： H01S5/22
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/0287 , H01S5/2214 , H01S5/3202
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element having a grown surface as an "a" surface or an "m" surface and also having excellent high-output characteristics and high reliability.
SOLUTION: The nitride semiconductor laser element has a laminated structure formed by laminating a plurality of nitride semiconductor layers of hexagonal crystal semiconductors. A waveguide passage construction through which laser light guides waves is formed in the laminated structure. The nitride semiconductor layers are laminated in the laminated structure in a direction almost vertical to a "c" axis of the hexagonal crystal semiconductor constituting the nitride semiconductor layer. A first resonator end surface or one side surface of the waveguide passage construction is a "c" surface of Ga polarity, and a second resonator end surface or a side surface of the waveguide passage construction opposed to the first resonator end surface is a "c" surface of N polarity. A crystalline nitride-contained film is formed on a surface of the first resonator end surface. The reflection factor of the first resonator end surface is smaller than that of the second resonator end surface.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有生长表面作为“a”表面或“m”表面并且还具有优异的高输出特性和高可靠性的氮化物半导体激光元件。解决方案：氮化物半导体激光元件具有通过层叠多个六方晶体半导体的氮化物半导体层而形成的层叠结构。在叠层结构中形成激光导波的波导管道结构。氮化物半导体层沿着与构成氮化物半导体层的六方晶系半导体的“c”轴大致垂直的方向层叠在层叠结构体中。波导路径结构的第一谐振器端面或一侧面是Ga极性的“c”面，与第一谐振器端面相对的波导通路结构的第二谐振器端面或侧面为“c” “N极性表面。在第一谐振器端面的表面上形成含结晶氮化物的膜。第一谐振器端面的反射系数小于第二谐振器端面的反射系数。版权所有（C）2009，JPO＆INPIT

66. 发明专利

JP2008305911A Nitride system semiconductor laser element and its manufacturing method 有权
标题翻译：氮化物系半导体激光元件及其制造方法
公开(公告)号：JP2008305911A
公开(公告)日：2008-12-18
申请号：JP2007150639
申请日：2007-06-06
申请人： Sharp Corp , シャープ株式会社
发明人： YAMAMOTO HIDEICHIRO , ITO SHIGETOSHI , YAMASHITA FUMIO , KAWAKAMI TOSHIYUKI
IPC分类号： H01S5/22
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/3202 , H01S2301/173
摘要： PROBLEM TO BE SOLVED: To provide a nitride system semiconductor laser element having a structure for suppressing occurrence of a stage arising in a nitride semiconductor layer.
SOLUTION: The nitride system semiconductor laser element 100 comprises: the nitride semiconductor substrate 101 having a main surface of (11-20) surface; a resonator end surface orthogonal to the main surface; and an excavating part 114 as an excavating region for opening to the surface of the nitride semiconductor layer at least at one side of a stripe-shaped waveguide on a cleaving surface comprising the resonator end surface.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种具有抑制在氮化物半导体层中产生的阶段的发生的结构的氮化物系半导体激光元件。解决方案：氮化物系半导体激光元件100包括：具有（11-20）表面的主表面的氮化物半导体衬底101; 与主表面正交的谐振器端面; 以及挖掘部114作为挖掘区域，用于至少在包括共振器端面的裂开表面上的条形波导的一侧开口到氮化物半导体层的表面。版权所有（C）2009，JPO＆INPIT

67. 发明专利

JP2008288624A Manufacturing method of light emitting element 审中-公开
标题翻译：发光元件的制造方法
公开(公告)号：JP2008288624A
公开(公告)日：2008-11-27
申请号：JP2008228395
申请日：2008-09-05
申请人： Sharp Corp , シャープ株式会社
发明人： ITO SHIGETOSHI
IPC分类号： H01L33/32 , H01L33/42
摘要： PROBLEM TO BE SOLVED: To achieve a light emitting element having a good luminous efficiency in which light emitted directly under a bonding electrode can be effectively taken outside. SOLUTION: The manufacturing method of a light emitting element in which a plurality of light emitting element units each having a first bonding electrode and a second bonding electrode are collectively formed on a wafer having a transparent substrate, includes steps of: forming a first semiconductor layer and a second semiconductor layer on the transparent substrate in this order; forming a plurality of first bonding electrodes on the first semiconductor layer; and forming a plurality of second bonding electrodes on the second semiconductor layer. Wherein, the first and the second bonding electrodes are arranged in parallel so that the outer shape of the light emitting element unit becomes rectangular in a plane view, and the plurality of first and second bonding electrodes are arranged adjacently in parallel with each other, respectively, so that a plurality of light emitting element units are arranged adjacently in parallel with each other. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了实现具有良好的发光效率的发光元件，其中能够有效地将外部直接发射在接合电极下方的光发射。解决方案：在具有第一接合电极和第二接合电极的多个发光元件单元共同形成在具有透明基板的晶片上的发光元件的制造方法包括以下步骤：形成第一半导体层和透明基板上的第二半导体层; 在所述第一半导体层上形成多个第一接合电极; 以及在所述第二半导体层上形成多个第二接合电极。其中，第一和第二接合电极平行布置，使得发光元件单元的外形在平面图中变成矩形，并且多个第一和第二接合电极分别相互平行地布置使得多个发光元件单元彼此相邻地相邻布置。版权所有（C）2009，JPO＆INPIT

68. 发明专利

JP2008273835A Nitride semiconductor laser element, and method of manufacturing nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件及制造氮化物半导体激光元件的方法
公开(公告)号：JP2008273835A
公开(公告)日：2008-11-13
申请号：JP2008150908
申请日：2008-06-09
申请人： Sharp Corp , Sumitomo Electric Ind Ltd , シャープ株式会社 , 住友電気工業株式会社
发明人： YUASA TAKAYUKI , UEDA YOSHIHIRO , ITO SHIGETOSHI , TANETANI MOTOTAKA , TANI YOSHIHEI , MOTOKI KENSAKU
IPC分类号： C30B29/38 , C30B25/04 , H01S5/22 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor substrate appropriate for a nitride semiconductor laser element having reduced inner crystal defects and a relaxed stress. SOLUTION: The nitride semiconductor substrate 10 containing a nitride semiconductor 22 comprises a dislocation concentrated region 24 of the following (1), and a low dislocation region of (2). In addition, the surface of the nitride semiconductor substrate 10 has an off-angle of within the range of 0.2°-1° from (0001) plane. (1) The dislocation concentrated region 24 has a V-shape by forming an inclined plane composed of facet planes 23 on both sides of a bottom which is a dense dislocation region of a stripe-state, becomes a stripe-state by growing the nitride while the inclined plane of the facet planes 23 is maintained so as to concentrate crystal defects, and further becomes various states. (2) The low dislocation region is a region except for the dislocation concentrated region 24. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供适合于具有减小的内部晶体缺陷和松弛应力的氮化物半导体激光元件的氮化物半导体衬底。解决方案：包含氮化物半导体22的氮化物半导体衬底10包括以下（1）的位错集中区域24和（2）的低位错区域。此外，氮化物半导体衬底10的表面与（0001）面的偏离角在0.2°-1°的范围内。（1）位错集中区域24具有V形状，通过在条状状态的致密位错区域的底部的两侧上形成由面面23构成的倾斜面，通过生长氮化物而成为条状状态同时保持面平面23的倾斜平面以集中晶体缺陷，并进一步变为各种状态。（2）低位错区域是除了位错集中区域24之外的区域。版权所有（C）2009，JPO＆INPIT

69. 发明专利

JP2008227543A Nitride semiconductor laser element and manufacturing method of nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光器元件和氮化物半导体激光元件的制造方法
公开(公告)号：JP2008227543A
公开(公告)日：2008-09-25
申请号：JP2008150922
申请日：2008-06-09
申请人： Sharp Corp , Sumitomo Electric Ind Ltd , シャープ株式会社 , 住友電気工業株式会社
发明人： ITO SHIGETOSHI , UEDA YOSHIHIRO , YUASA TAKAYUKI , TANETANI MOTOTAKA , MOTOKI KENSAKU
IPC分类号： H01S5/343 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element having a long laser oscillation life. SOLUTION: A nitride semiconductor substrate includes: a dislocation concentration region, in which, by using an inclined plane that is the side surface of the groove having a V shaped cross-section as a facet plane, and performing growth on the facet plane while keeping the inclined plane, dislocation is concentrated in the groove, and generated in a stripe shape; and a low dislocation concentration region which is a region except the dislocation concentration region. Further, the surface of the nitride semiconductor substrate has an off angle within the range of 0.2° to 1° from the (0001) plane. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有长激光振荡寿命的氮化物半导体激光元件。解决方案：氮化物半导体衬底包括：位错集中区域，其中通过使用作为具有V形横截面的沟槽的侧表面的倾斜面作为面平面，并在该面上进行生长在保持倾斜平面的同时，位错集中在凹槽中，并且产生条纹状; 以及作为位错浓度区域以外的区域的低位错浓度区域。此外，氮化物半导体衬底的表面具有与（0001）面成0.2°至1°的偏离角。版权所有（C）2008，JPO＆INPIT

70. 发明专利

JP2008124485A Nitride semiconductor laser element, and optical information reproducing device using the same 审中-公开
标题翻译：氮化物半导体激光元件和使用其的光学信息再现装置
公开(公告)号：JP2008124485A
公开(公告)日：2008-05-29
申请号：JP2007322412
申请日：2007-12-13
申请人： Sharp Corp , シャープ株式会社
发明人： YAMAZAKI YUKIO , ITO SHIGETOSHI
IPC分类号： H01S5/323 , G11B7/125
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element that improves an ellipticity without increasing operating power, and to provide a compact optical information reproducing device that has low power consumption. SOLUTION: In the nitride semiconductor laser element of the present invention, an active layer 17 is put between an n-type cladding layer 15 comprising n- and p-type nitride semiconductors and a p-type cladding layer 26. In addition, the p-type cladding layer 26 is composed of at least two layers where the composition is mutually different in a layer thickness direction, and a first p-type cladding layer 20 positioned near the active layer 17 has a lower refractive index than a second p-type cladding layer 21. In addition, the optical information reproducing device has the semiconductor laser element mounted thereon. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种在不增加工作功率的情况下提高椭圆率的氮化物半导体激光元件，并且提供具有低功耗的紧凑型光信息再现装置。解决方案：在本发明的氮化物半导体激光元件中，将有源层17放置在包括n型和p型氮化物半导体的n型包层15和p型覆层26之间。此外 p型覆层26由层厚度方向上的组成相互不同的至少两层构成，位于有源层17附近的第一p型覆层20的折射率比第二另外，光信息重放装置安装有半导体激光元件。版权所有（C）2008，JPO＆INPIT

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