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    • 63. 发明授权
    • Structures and methods for RF de-embedding
    • RF去嵌入的结构和方法
    • US08917083B2
    • 2014-12-23
    • US12953810
    • 2010-11-24
    • Robert A. GrovesNing LuChristopher S. PutnamEric Thompson
    • Robert A. GrovesNing LuChristopher S. PutnamEric Thompson
    • G01R5/14G01R27/28H01L21/66G01R35/00
    • G01R27/28G01R23/20G01R35/00H01L22/34H01L2924/0002H01L2924/00
    • Electrical structures, methods, and computer program products for radio frequency (RF) de-embedding are provided. A structure includes a first test device, a first through structure corresponding to the first test device, and a first open structure corresponding to the first test device. The structure also includes a second test device having at least one different physical dimension than the first test device but otherwise identical to the first test device, a second through structure corresponding to the second test device, and a second open structure corresponding to the second test device. A method includes determining a first electrical parameter of the first test device in a first DUT structure and a second electrical parameter of the second test device in a second DUT structure based on measured electrical parameters of the first and the second DUT structures, through structures, and open structures.
    • 提供射频(RF)去嵌入的电气结构,方法和计算机程序产品。 一种结构包括第一测试装置,对应于第一测试装置的第一穿透结构以及对应于第一测试装置的第一开放结构。 该结构还包括具有与第一测试装置至少一个不同的物理尺寸但与第一测试装置相同的第二测试装置,对应于第二测试装置的第二穿透结构以及对应于第二测试的第二开放结构 设备。 一种方法包括:基于第一和第二DUT结构的测量电参数,通过结构,确定第二DUT结构中的第一测试设备的第一测试设备的第一电参数和第二DUT结构中的第二电参数, 和开放结构。
    • 66. 发明授权
    • Orientation-independent multi-layer BEOL capacitor
    • 取向无关多层BEOL电容
    • US07701037B2
    • 2010-04-20
    • US11831208
    • 2007-07-31
    • Anil K. ChinthakindiEric Thompson
    • Anil K. ChinthakindiEric Thompson
    • H01L29/00
    • H01L27/0805H01L23/5223H01L2924/0002H01L2924/00
    • A plurality of interdigitized conductive fingers are arranged to form a substantially square configuration in each of a plurality of layers separated by a high dielectric constant material, wherein each of the plurality of interdigitized conductive fingers includes at least one bend of substantially ninety degrees. The plurality of interdigitized conductive fingers includes a first set of fingers that are connected to an anode terminal, and a second set of fingers that are connected to a cathode terminal. The plurality of layers includes a bottommost layer that is in closest proximity to a substrate relative to other layers of the plurality of layers. The bottommost layer does not include any fingers connected to the anode terminal.
    • 多个交叉指状的导电指状物被布置成在由高介电常数材料分离的多个层中的每一层中形成基本上正方形的构造,其中多个交叉指状导电指状物中的每一个包括至少一个基本上90度的弯曲部。 多个交叉指状的导电指状物包括连接到阳极端子的第一组指状物和连接到阴极端子的第二组指状物。 多个层包括相对于多个层中的其它层最靠近衬底的最底层。 最底层不包括连接到阳极端子的任何手指。