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61. 发明授权

US5502739A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5502739A
公开(公告)日：1996-03-26
申请号：US396506
申请日：1995-03-01
申请人： Isao Kidoguchi , Kiyoshi Ohnaka , Hideto Adachi , Satoshi Kamiyama , Masaya Mannou , Takeshi Uenoyama
发明人： Isao Kidoguchi , Kiyoshi Ohnaka , Hideto Adachi , Satoshi Kamiyama , Masaya Mannou , Takeshi Uenoyama
IPC分类号： H01S5/20 , H01S5/32 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34326 , H01S5/2004 , H01S5/2013 , H01S5/3201 , H01S5/3403 , H01S5/3409
摘要： A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided. The multi-quantum barrier includes barrier layers and well layers being alternated with each other. Thickness, energy band gap, or impurity concentration of at least one of the barrier layers and well layers in the multi-quantum barrier changes with the distance from the active layer, thereby providing a stable function of reflecting carriers overflowing from the active layer back to the active layer.
摘要翻译：提供一种半导体激光器件，其具有有源层，插入有源层的一对包覆层和设置在一对包层之一和有源层之间的多量子势垒。多量子势垒包括阻挡层和彼此交替的阱层。多量子势垒中的至少一个阻挡层和阱层的厚度，能带隙或杂质浓度随着与有源层的距离而变化，从而提供将从有源层溢出的载流子反射回到活动层。

62. 发明授权

US5279985A Semiconductor device and method of fabrication thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5279985A
公开(公告)日：1994-01-18
申请号：US945260
申请日：1992-09-15
申请人： Satoshi Kamiyama
发明人： Satoshi Kamiyama
IPC分类号： H01B3/12 , H01L21/02 , H01L21/28 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , H01L29/43 , H01L21/70
CPC分类号： H01L28/40 , Y10S148/014 , Y10S148/163
摘要： The present invention relates to a semiconductor device and a method of fabrication of the same, said semiconductor device including a capacitive structure comprising of a lower layer electrode consisting of a silicon material, a capacitive insulating film consisting of a tantalum oxide film and an upper layer electrode, said upper layer electrode comprising at least a titanium nitride film for covering said capacitive insulating film. Said method of fabrication comprises the steps of: forming the lower layer electrode; forming the capacitive insulating film for covering said lower layer electrode; and forming the titanium nitride film for covering said capacitive insulating film.
摘要翻译：半导体器件及其制造方法技术领域本发明涉及半导体器件及其制造方法，所述半导体器件包括电容结构，该电容结构包括由硅材料构成的下层电极，由氧化钽膜构成的电容绝缘膜和上层电极，所述上层电极至少包括用于覆盖所述电容绝缘膜的氮化钛膜。所述制造方法包括以下步骤：形成下层电极; 形成用于覆盖所述下层电极的电容绝缘膜; 以及形成用于覆盖所述电容绝缘膜的氮化钛膜。

63. 发明授权

US5202280A Method for fabricating a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5202280A
公开(公告)日：1993-04-13
申请号：US894938
申请日：1992-06-08
申请人： Satoshi Kamiyama , Yuchiro Numasawa
发明人： Satoshi Kamiyama , Yuchiro Numasawa
IPC分类号： C23C14/48 , H01L21/02 , H01L21/265 , H01L21/334 , H01L21/822 , H01L27/04
CPC分类号： H01L28/40 , H01L29/66181
摘要： In a method for fabricating a semiconductor device according to the invention, a tantalum oxide layer is formed on a semiconductor substrate, titanium ions are injected into the tantalum oxide layer, and the tantalum oxide layer is heated to be fined.
摘要翻译：在根据本发明的半导体器件的制造方法中，在半导体衬底上形成氧化钽层，将钛离子注入到钽氧化物层中，并且氧化钽层被加热以被罚款。

64. 发明授权

US08491476B2 Ultrasound imaging apparatus and method for generating ultrasound image 有权
标题翻译：超声成像设备和产生超声图像的方法
公开(公告)号：US08491476B2
公开(公告)日：2013-07-23
申请号：US12557899
申请日：2009-09-11
申请人： Nobuyuki Iwama , Isao Uchiumi , Masaaki Ishitsuka , Satoshi Kamiyama , Toru Hirano , Takeshi Fukasawa
发明人： Nobuyuki Iwama , Isao Uchiumi , Masaaki Ishitsuka , Satoshi Kamiyama , Toru Hirano , Takeshi Fukasawa
IPC分类号： A61B5/00 , A61B8/00
CPC分类号： A61B8/00 , A61B8/4483 , A61B8/481 , A61B8/488 , G01S7/5202 , G01S7/523
摘要： A bias gate part supplies a bias current to a transmission pulse generator. The transmission pulse generator receives the supply of the bias current, amplifies an input voltage, and supplies an output voltage obtained by the amplification to array transducer elements. In accordance with the timing of transmitting ultrasound waves from the array transducer elements and the level of the output voltage supplied to the array transducer elements, the bias gate part supplies the bias current to the transmission pulse generator while changing the timing of supplying the bias current.
摘要翻译：偏置栅极部分向发射脉冲发生器提供偏置电流。传输脉冲发生器接收偏置电流的供应，放大输入电压，并将通过放大获得的输出电压提供给阵列换能器元件。根据从阵列换能器元件发送超声波的时间和提供给阵列换能器元件的输出电压的电平，偏置栅极部分将偏置电流提供给发送脉冲发生器，同时改变提供偏置电流的时序。

65. 发明申请

US20110048553A1 PRESSURE REGULATOR 审中-公开
标题翻译：压力调节器
公开(公告)号：US20110048553A1
公开(公告)日：2011-03-03
申请号：US11996955
申请日：2006-07-25
申请人： Yasuaki Nakamura , Hideto Usui , Satoshi Kamiyama , Mitsuo Hirotomi
发明人： Yasuaki Nakamura , Hideto Usui , Satoshi Kamiyama , Mitsuo Hirotomi
IPC分类号： F16K7/00
CPC分类号： G05D16/0661 , Y10T137/7904
摘要： A pressure regulator includes a housing having an inlet port through which pressurized fluid at a primary pressure is supplied, and a discharge port through which pressurized fluid at a secondary pressure lower than the primary pressure is discharged, and at the same time having a flow passage formed therein to extend from the inlet port to the discharge port, and a pressure control mechanism which is disposed on the flow passage to reduce the primary pressure to the secondary pressure. The pressure control mechanism includes a movable body including a diaphragm which is displaced in response to change in the pressure of the fluid and the movable body is provided with an abutment portion which is brought into abutment against a part of the housing to prevent the movable body from being excessively displaced when the primary pressure becomes excessively high.
摘要翻译：压力调节器包括壳体，该壳体具有供给初级压力的加压流体的入口端口以及排出低于初级压力的次级压力的加压流体的排出口，同时具有流路形成在其中以从入口端口延伸到排放口;以及压力控制机构，其布置在流动通道上以将初级压力降低到次级压力。压力控制机构包括：移动体，其包括响应于流体的压力变化而移位的隔膜，并且可移动体设置有邻接部分，抵靠部分抵靠壳体的一部分以防止移动体当初级压力变得过高时，不会发生过度位移。

66. 发明申请

US20070228395A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20070228395A1
公开(公告)日：2007-10-04
申请号：US11759326
申请日：2007-06-07
申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
发明人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
IPC分类号： H01L27/15
CPC分类号： B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/02272 , H01S5/2068 , H01S5/2201 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32308 , H01S5/32341 , H01S5/3403 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10S257/918 , Y10T428/12528
摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
摘要翻译：本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在有源层的c平面内产生各向异性应变。

67. 发明申请

US20050139937A1 Semiconductor device method for manufacturing the same, apparatus for forming film, and method for forming high-dielectric-constant film 失效
标题翻译：其制造半导体器件的方法，用于形成膜的设备以及用于形成高介电常数膜的方法
公开(公告)号：US20050139937A1
公开(公告)日：2005-06-30
申请号：US10811979
申请日：2004-03-30
申请人： Satoshi Kamiyama , Tsunetoshi Arikado
发明人： Satoshi Kamiyama , Tsunetoshi Arikado
IPC分类号： H01L21/336 , H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L29/78 , H01L29/76 , H01L21/8238
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/3141 , H01L21/3143 , H01L21/31604 , H01L21/31608 , H01L21/31645 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A semiconductor device having a gate electrode on a silicon substrate via a gate insulating film is formed by laminating the gate insulating film with a silicon oxide film, formed on the silicon substrate, an Hf silicate film is formed on the silicon oxide film, and a nitrogen-containing Hf silicate film formed on the Hf silicate film, and containing Hf in a peak concentration in a range from one atomic % to thirty atomic %, and nitrogen in a peak concentration in a range from ten atomic % to thirty atomic %.
摘要翻译：通过栅极绝缘膜在硅衬底上具有栅电极的半导体器件通过在硅衬底上层叠栅极绝缘膜与形成在氧化硅膜上的氧化硅膜形成，在氧化硅膜上形成Hf硅酸盐膜，形成在Hf硅酸盐膜上的含氮Hf硅酸盐膜，并且含有峰值浓度为1原子％至30原子％范围内的Hf，峰值浓度为10原子％至30原子％的氮。

68. 发明授权

US06861672B2 Semiconductor light emitting element and method for fabricating the same 失效
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US06861672B2
公开(公告)日：2005-03-01
申请号：US10011552
申请日：2001-11-06
申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
发明人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
IPC分类号： H01L33/16 , H01L33/32 , H01S5/02 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01L27/15
CPC分类号： B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/02272 , H01S5/2068 , H01S5/2201 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32308 , H01S5/32341 , H01S5/3403 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10S257/918 , Y10T428/12528
摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.
摘要翻译：本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在有源层的c平面内产生各向异性应变。

69. 发明申请

US20050003571A1 Semiconductor light emitting element and method for fabricating the same 有权
公开(公告)号：US20050003571A1
公开(公告)日：2005-01-06
申请号：US10891968
申请日：2004-07-15
申请人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
发明人： Satoshi Kamiyama , Masakatsu Suzuki , Takeshi Uenoyama , Kiyoshi Ohnaka , Akira Takamori , Masaya Mannoh , Isao Kidoguchi , Hideto Adachi , Akihiko Ishibashi , Toshiya Fukuhisa , Yasuhito Kumabuchi
IPC分类号： H01L33/16 , H01L33/32 , H01S5/02 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01L21/00
CPC分类号： B82Y20/00 , H01L33/16 , H01L33/32 , H01S5/0207 , H01S5/0213 , H01S5/02272 , H01S5/2068 , H01S5/2201 , H01S5/2232 , H01S5/2237 , H01S5/24 , H01S5/3201 , H01S5/3202 , H01S5/3203 , H01S5/32308 , H01S5/32341 , H01S5/3403 , H01S5/34333 , H01S2301/173 , H01S2304/04 , H01S2304/12 , Y10S257/918 , Y10T428/12528
摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.

70. 发明授权

US6081541A Semiconductor laser device and optical disk apparatus using the same 失效
公开(公告)号：US6081541A
公开(公告)日：2000-06-27
申请号：US349747
申请日：1999-07-08
申请人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
发明人： Hideto Adachi , Satoshi Kamiyama , Isao Kidoguchi , Takeshi Uenoyama , Masaya Mannoh , Toshiya Fukuhisa
IPC分类号： G11B7/12 , G11B7/125 , G11B7/13 , G11B7/135 , G11B7/22 , H01S5/00 , H01S5/022 , H01S5/026 , H01S5/065 , H01S5/20 , H01S5/223 , H01S5/227 , H01S5/30 , H01S5/32 , H01S5/323 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , G11B7/123 , G11B7/127 , G11B7/131 , G11B7/1353 , H01S5/2231 , G11B7/22 , H01S5/02248 , H01S5/02292 , H01S5/0658 , H01S5/2004 , H01S5/2013 , H01S5/2022 , H01S5/209 , H01S5/3054 , H01S5/3216 , H01S5/3218 , H01S5/34326
摘要： A semiconductor laser device of the present invention includes a substrate 201 made of n-type GaAs, an active layer 204, and a pair of cladding layers sandwiching the active layer 204. The device further includes a spacer layer 205 adjacent to the active layer 204 and a highly doped saturable absorbing layer 206. The carrier life time is shortened by doping the saturable absorbing layer 206 in a high concentration, whereby stable self-sustained pulsation can be obtained. As a result, a semiconductor laser device can be obtained, which has a low relative noise intensity in a wide range of temperatures.

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