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61. 发明申请

US20130034947A1 ATOMIC LAYER DEPOSITION OF METAL OXIDES FOR MEMORY APPLICATIONS 有权
标题翻译：原子层沉积金属氧化物存储器应用
公开(公告)号：US20130034947A1
公开(公告)日：2013-02-07
申请号：US13198837
申请日：2011-08-05
申请人： Zhendong Hong , Hieu Pham , Randall Higuchi , Vidyut Gopal , Imran Hashim
发明人： Zhendong Hong , Hieu Pham , Randall Higuchi , Vidyut Gopal , Imran Hashim
IPC分类号： H01L21/20 , B82Y40/00
CPC分类号： H01L45/146 , H01L27/2463 , H01L45/04 , H01L45/08 , H01L45/1233 , H01L45/1616
摘要： Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack which contains at least one hard metal oxide film (e.g., metal is completely oxidized or substantially oxidized) and at least one soft metal oxide film (e.g., metal is less oxidized than hard metal oxide). The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. In one example, the hard metal oxide film is formed by an ALD process utilizing ozone as the oxidizing agent while the soft metal oxide film is formed by another ALD process utilizing water vapor as the oxidizing agent.
摘要翻译：本发明的实施例一般涉及用于制造这种存储器件的非易失性存储器件和方法。用于形成改进的存储器件（例如ReRAM单元）的方法提供优化的原子层沉积（ALD）工艺，用于形成金属氧化物膜堆叠，其含有至少一个硬金属氧化物膜（例如，金属被完全氧化或基本上被氧化）和至少一种软金属氧化物膜（例如，金属比硬金属氧化物氧化较少）。由于软金属氧化物膜比硬金属氧化物膜氧化得更少或更金属，所以软金属氧化物膜的电阻小于硬金属氧化物膜。在一个实例中，通过利用臭氧作为氧化剂的ALD工艺形成硬质金属氧化物膜，而通过利用水蒸汽作为氧化剂的另一ALD工艺形成软金属氧化物膜。

62. 发明申请

US20110203085A1 TITANIUM-BASED HIGH-K DIELECTRIC FILMS 有权
标题翻译：基于钛的高K电介质膜
公开(公告)号：US20110203085A1
公开(公告)日：2011-08-25
申请号：US13100538
申请日：2011-05-04
申请人： Hanhong Chen , Pragati Kumar , Sunil Shanker , Edward Haywood , Sandra Malhotra , Imran Hashim , Nobi Fuchigami , Prashant Phatak , Monica Mathur
发明人： Hanhong Chen , Pragati Kumar , Sunil Shanker , Edward Haywood , Sandra Malhotra , Imran Hashim , Nobi Fuchigami , Prashant Phatak , Monica Mathur
IPC分类号： H01G7/00
CPC分类号： H01G4/1218 , C23C16/405 , C23C16/45531 , C23C16/56 , H01G4/33 , H01L21/02186 , H01L21/022 , H01L21/0228 , H01L21/02312 , H01L21/02337 , H01L21/3141 , H01L21/3142 , H01L28/40
摘要： This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on titanium oxide, to suppress the formation of anatase-phase titanium oxide and (b) related devices and structures. A metal-insulator-metal (“MIM”) stack is formed using an ozone pretreatment process of a bottom electrode (or other substrate) followed by an ALD process to form a TiO2 dielectric, rooted in the use of an amide-containing precursor. Following the ALD process, an oxidizing anneal process is applied in a manner is hot enough to heal defects in the TiO2 dielectric and reduce interface states between TiO2 and electrode; the anneal temperature is selected so as to not be so hot as to disrupt BEL surface roughness. Further process variants may include doping the titanium oxide, pedestal heating during the ALD process to 275-300 degrees Celsius, use of platinum or ruthenium for the BEL, and plural reagent pulses of ozone for each ALD process cycle. The process provides high deposition rates, and the resulting MIM structure has substantially no x-ray diffraction peaks associated with anatase-phase titanium oxide.
摘要翻译：本公开内容提供（a）制造基于氧化钛的氧化物层（例如电介质层）的方法，以抑制锐钛矿相氧化钛的形成和（b）相关的器件和结构。使用底部电极（或其他基底）的臭氧预处理随后进行ALD工艺来形成金属 - 绝缘体 - 金属（“MIM”）堆叠，以形成根植于含酰胺前体的TiO 2电介质。在ALD工艺之后，氧化退火工艺的应用热度足以愈合TiO2电介质中的缺陷，并降低TiO2和电极之间的界面态; 选择退火温度以使其不那么热，以致破坏BEL表面粗糙度。进一步的工艺变型可以包括在ALD工艺期间掺杂氧化钛，基座加热至275-300摄氏度，对于BEL使用铂或钌，对于每个ALD工艺循环使用多个试剂脉冲的臭氧。该方法提供高沉积速率，并且所得MIM结构基本上没有与锐钛矿相氧化钛相关的x射线衍射峰。

63. 发明申请

US20110027617A1 Methods of Forming Strontium Titanate Films 失效
公开(公告)号：US20110027617A1
公开(公告)日：2011-02-03
申请号：US12793614
申请日：2010-06-03
申请人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Nobi Fuchigami , Iain Buchanan , Duong Anh , Sandra Malhotra , Imran Hashim
发明人： Laura M. Matz , Xiangxin Rui , Xinjian Lei , Sunil Shanker , Moo-Sung Kim , Nobi Fuchigami , Iain Buchanan , Duong Anh , Sandra Malhotra , Imran Hashim
IPC分类号： B32B9/00
CPC分类号： C23C16/45531 , C23C16/409 , H01L21/02197 , H01L21/0228 , H01L21/02356 , H01L21/3142 , H01L21/31691 , H01L28/56
摘要： Embodiments of the current invention include methods of forming a strontium titanate (SrTiO3) film using atomic layer deposition (ALD). More particularly, the method includes forming a plurality of titanium oxide (TiO2) unit films using ALD and forming a plurality of strontium oxide (SrO) unit films using ALD. The combined thickness of the TiO2 and SrO unit films is less than approximately 5 angstroms. The TiO2 and SrO units films are then annealed to form a strontium titanate layer.

64. 发明授权

US6121141A Method of forming a void free copper interconnects 有权
标题翻译：形成无空隙铜互连的方法
公开(公告)号：US6121141A
公开(公告)日：2000-09-19
申请号：US198362
申请日：1998-11-24
申请人： Christy Mei-Chu Woo , Dirk Brown , Young-Chang Joo , Imran Hashim
发明人： Christy Mei-Chu Woo , Dirk Brown , Young-Chang Joo , Imran Hashim
IPC分类号： H01L21/768 , H01L21/44
CPC分类号： H01L21/76882
摘要： Void free Cu or Cu alloy interconnects are formed by annealing at superatmospheric pressure after metallization. Embodiments include filling a damascene opening in a dielectric layer with Cu or a Cu alloy and heat treating in a chamber at a pressure of about 2 atmospheres to about 750 atmospheres.
摘要翻译：通过在金属化后的超大气压下退火形成无空隙的Cu或Cu合金互连。实施例包括用Cu或Cu合金填充电介质层中的镶嵌开口，并在室内以约2个大气压至约750个大气压的压力进行热处理。

65. 发明申请

US20160172588A1 Method For Forming Resistive Switching Memory Elements 审中-公开
标题翻译：形成电阻式开关存储元件的方法
公开(公告)号：US20160172588A1
公开(公告)日：2016-06-16
申请号：US14317255
申请日：2014-06-27
申请人： Jinhong Tong , Randall Higuchi , Imran Hashim , Vidyut Gopal
发明人： Jinhong Tong , Randall Higuchi , Imran Hashim , Vidyut Gopal
IPC分类号： H01L45/00
CPC分类号： H01L45/1608 , H01L45/04 , H01L45/146 , H01L45/1616 , H01L45/1633 , H01L45/1658
摘要： Methods for producing RRAM resistive switching elements having reduced forming voltage include doping to create oxygen deficiencies in the dielectric film. Oxygen deficiencies in a dielectric film promote formation of conductive pathways.
摘要翻译：制造具有降低的成形电压的RRAM电阻式开关元件的方法包括掺杂以在电介质膜中产生氧缺陷。电介质膜中的氧缺乏促进导电通路的形成。

66. 发明授权

US09299926B2 Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter element 有权
标题翻译：使用隧道氧化物层和氧阻挡层作为限流元件的非易失性存储器件
公开(公告)号：US09299926B2
公开(公告)日：2016-03-29
申请号：US13399728
申请日：2012-02-17
申请人： Mihir Tendulkar , Imran Hashim , Yun Wang , Tim Minvielle , Takeshi Yamaguchi
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang , Tim Minvielle , Takeshi Yamaguchi
IPC分类号： H01L21/02 , H01L45/00
CPC分类号： H01L45/08 , G11C2213/51 , H01L45/12 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/16
摘要： Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element with improved device switching performance and lifetime, due to the addition of a current limiting component. In one embodiment, the current limiting component comprises a resistive material configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide layer that is a current limiting material and an oxygen barrier layer that is an oxygen deficient material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.
摘要翻译：本发明的实施例包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。在一个实施例中，限流部件包括被配置为改善电阻式开关存储器元件的开关性能和寿命的电阻材料。电流限制层的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件中存在的电阻式开关存储器元件中增加固定串联电阻来降低通过可变电阻层的电流。在一个实施例中，限流部件包括作为限流材料的隧道氧化物层和作为设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的缺氧材料的氧阻挡层。

67. 发明授权

US08741698B2 Atomic layer deposition of zirconium oxide for forming resistive-switching materials 有权
标题翻译：用于形成电阻式开关材料的氧化锆的原子层沉积
公开(公告)号：US08741698B2
公开(公告)日：2014-06-03
申请号：US13306096
申请日：2011-11-29
申请人： Jinhong Tong , Vidyut Gopal , Imran Hashim , Randall Higuchi , Albert Lee
发明人： Jinhong Tong , Vidyut Gopal , Imran Hashim , Randall Higuchi , Albert Lee
IPC分类号： H01L21/332
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/146 , H01L45/1616
摘要： Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium oxide for use in a variety of electronic devices. Forming the dielectric layer includes depositing zirconium oxide using atomic layer deposition. A method of atomic layer deposition to produce a metal-rich metal oxide comprises the steps of providing a silicon substrate in a reaction chamber, pulsing a zirconium precursor for a predetermined time to deposit a first layer, and oxidizing the first layer with water vapor to produce the metal-rich metal oxide. The metal-rich metal oxide has superior properties for non-volatile resistive-switching memories.
摘要翻译：原子层沉积（ALD）可用于形成用于各种电子器件的氧化锆电介质层。形成介电层包括使用原子层沉积沉积氧化锆。原子层沉积法生产富金属的金属氧化物的方法包括以下步骤：在反应室中提供硅衬底，将锆前体脉冲预定的时间以沉积第一层，并用水蒸气氧化第一层产生富金属的金属氧化物。富金属的金属氧化物具有优异的非易失性电阻式开关存储器的性能。

68. 发明申请

US20140054531A1 DEFECT ENHANCEMENT OF A SWITCHING LAYER IN A NONVOLATILE RESISTIVE MEMORY ELEMENT 审中-公开
标题翻译：非易失性存储元件中切换层的缺陷增强
公开(公告)号：US20140054531A1
公开(公告)日：2014-02-27
申请号：US13594395
申请日：2012-08-24
申请人： Nan Lu , Imran Hashim , Jinhong Tong , Ruey-Ven Wang
发明人： Nan Lu , Imran Hashim , Ronald Kuse , Jinhong Tong , Ruey-Ven Wang
IPC分类号： H01L47/00 , H01L21/02
CPC分类号： H01L45/1641 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/10 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： Embodiments of the invention set forth a nonvolatile memory element with a novel variable resistance layer and methods of forming the same. The novel variable resistance layer includes a metal-rich host oxide that operates with a reduced switching voltage and current and requires significantly reduced forming voltage when manufactured. In some embodiments, the metal-rich host oxide is deposited using a modified atomic layer deposition (ALD) process. In other embodiments, the metal-rich host oxide is formed by depositing a metal-containing coupling layer on a host oxide and thermally processing both layers to create a metal-rich composite host oxide with a higher concentration of oxygen vacancies.
摘要翻译：本发明的实施例提出了具有新颖的可变电阻层的非易失性存储元件及其形成方法。新颖的可变电阻层包括富含金属的主体氧化物，其以降低的开关电压和电流工作，并且当制造时需要显着降低的成形电压。在一些实施方案中，使用修改的原子层沉积（ALD）工艺沉积富金属的主体氧化物。在其它实施方案中，通过在主体氧化物上沉积含金属的偶联层并热处理两层以形成具有较高浓度的氧空位的富金属的复合主体氧化物来形成富含金属的主体氧化物。

69. 发明授权

US08569104B2 Transition metal oxide bilayers 有权
公开(公告)号：US08569104B2
公开(公告)日：2013-10-29
申请号：US13367927
申请日：2012-02-07
申请人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
发明人： Hieu Pham , Vidyut Gopal , Imran Hashim , Tim Minvielle , Yun Wang , Takeshi Yamaguchi , Hong Sheng Yang
IPC分类号： H01L29/02
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1641
摘要： Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen.

70. 发明授权

US08551851B2 Titanium-based high-K dielectric films 有权
标题翻译：钛基高K电介质薄膜
公开(公告)号：US08551851B2
公开(公告)日：2013-10-08
申请号：US13100538
申请日：2011-05-04
申请人： Hanhong Chen , Pragati Kumar , Sunil Shanker , Edward Haywood , Sandra Malhotra , Imran Hashim , Nobi Fuchigami , Prashant Phatak , Monica Mathur
发明人： Hanhong Chen , Pragati Kumar , Sunil Shanker , Edward Haywood , Sandra Malhotra , Imran Hashim , Nobi Fuchigami , Prashant Phatak , Monica Mathur
IPC分类号： H01L21/20
CPC分类号： H01G4/1218 , C23C16/405 , C23C16/45531 , C23C16/56 , H01G4/33 , H01L21/02186 , H01L21/022 , H01L21/0228 , H01L21/02312 , H01L21/02337 , H01L21/3141 , H01L21/3142 , H01L28/40
摘要： This disclosure provides (a) methods of making an oxide layer (e.g., a dielectric layer) based on titanium oxide, to suppress the formation of anatase-phase titanium oxide and (b) related devices and structures. A metal-insulator-metal (“MIM”) stack is formed using an ozone pretreatment process of a bottom electrode (or other substrate) followed by an ALD process to form a TiO2 dielectric, rooted in the use of an amide-containing precursor. Following the ALD process, an oxidizing anneal process is applied in a manner is hot enough to heal defects in the TiO2 dielectric and reduce interface states between TiO2 and electrode; the anneal temperature is selected so as to not be so hot as to disrupt BEL surface roughness. Further process variants may include doping the titanium oxide, pedestal heating during the ALD process to 275-300 degrees Celsius, use of platinum or ruthenium for the BEL, and plural reagent pulses of ozone for each ALD process cycle. The process provides high deposition rates, and the resulting MIM structure has substantially no x-ray diffraction peaks associated with anatase-phase titanium oxide.
摘要翻译：本公开内容提供（a）制造基于氧化钛的氧化物层（例如电介质层）的方法，以抑制锐钛矿相氧化钛的形成和（b）相关的器件和结构。使用底部电极（或其他基底）的臭氧预处理随后进行ALD工艺来形成金属 - 绝缘体 - 金属（“MIM”）堆叠，以形成根植于使用含酰胺的前体的TiO 2电介质。在ALD工艺之后，氧化退火工艺的应用热度足以愈合TiO2电介质中的缺陷，并降低TiO2和电极之间的界面态; 选择退火温度以使其不那么热，以致破坏BEL表面粗糙度。进一步的工艺变型可以包括在ALD工艺期间掺杂氧化钛，基座加热至275-300摄氏度，对于BEL使用铂或钌，对于每个ALD工艺循环使用多个试剂脉冲的臭氧。该方法提供高沉积速率，并且所得MIM结构基本上没有与锐钛矿相氧化钛相关的x射线衍射峰。

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