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1. 发明申请

US20140084948A1 TEST VEHICLES FOR EVALUATING RESISTANCE OF THIN LAYERS 有权
标题翻译：用于评估薄层电阻的测试车辆
公开(公告)号：US20140084948A1
公开(公告)日：2014-03-27
申请号：US13624104
申请日：2012-09-21
申请人： Mihir Tendulkar , David Chi
发明人： Mihir Tendulkar , David Chi
IPC分类号： G01R27/08 , H01L21/3205
CPC分类号： H01L22/34 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Provided are test vehicles for evaluating various semiconductor materials. These materials may be used for various integrated circuit components, such as embedded resistors of resistive random access memory cells. Also provided are methods of fabricating and operating these test vehicles. A test vehicle may include two stacks protruding through an insulating body. Bottom ends of these stacks may include n-doped poly-silicon and may be interconnected by a connector. Each stack may include a titanium nitride layer provided over the poly-silicon end, followed by a titanium layer over the titanium nitride layer and a noble metal layer over the titanium layer. The noble metal layer extends to the top surface of the insulating body and forms a contact surface. The titanium layer may be formed in-situ with the noble metal layer to minimize oxidation of the titanium layer, which is used as an adhesion and oxygen getter.
摘要翻译：提供用于评估各种半导体材料的测试车辆。这些材料可用于各种集成电路部件，例如电阻随机存取存储器单元的嵌入式电阻器。还提供了制造和操作这些测试车辆的方法。测试车辆可以包括通过绝缘体突出的两个堆叠。这些堆叠的底端可以包括n掺杂的多晶硅，并且可以通过连接器互连。每个堆叠可以包括设置在多晶硅端上的氮化钛层，随后是氮化钛层上的钛层和钛层上的贵金属层。贵金属层延伸到绝缘体的顶表面并形成接触表面。钛层可以与贵金属层原位形成，以最小化用作粘合和氧气吸气剂的钛层的氧化。

2. 发明申请

US20130214232A1 NONVOLATILE MEMORY DEVICE USING A VARISTOR AS A CURRENT LIMITER ELEMENT 有权
标题翻译：使用VARISTOR作为当前限制元素的非易失性存储器件
公开(公告)号：US20130214232A1
公开(公告)日：2013-08-22
申请号：US13399815
申请日：2012-02-17
申请人： Mihir Tendulkar , Imran Hashim , Yun Wang
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang
IPC分类号： H01L45/00
CPC分类号： H01L45/1608 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In some embodiments, the current limiting component comprises a varistor that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加设置在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。在一些实施例中，限流部件包括变阻器，其是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

3. 发明申请

US20130187110A1 NONVOLATILE MEMORY DEVICE USING A TUNNEL OXIDE AS A CURRENT LIMITER ELEMENT 有权
标题翻译：使用隧道氧化物作为电流限制元件的非易失性存储器件
公开(公告)号：US20130187110A1
公开(公告)日：2013-07-25
申请号：US13354006
申请日：2012-01-19
申请人： Mihir Tendulkar , Imran Hashim , Yun Wang
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang
IPC分类号： H01L45/00 , H01L21/02 , B82Y99/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例通常包括形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件的添加而具有改进的器件切换性能和寿命的电阻式开关存储元件。限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。在一个实施例中，限流部件包括隧道氧化物，隧道氧化物是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

4. 发明授权

US08698119B2 Nonvolatile memory device using a tunnel oxide as a current limiter element 有权
标题翻译：使用隧道氧化物作为电流限制器元件的非易失性存储器件
公开(公告)号：US08698119B2
公开(公告)日：2014-04-15
申请号：US13354006
申请日：2012-01-19
申请人： Mihir Tendulkar , Imran Hashim , Yun Wang
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang
IPC分类号： H01L29/04 , H01L47/00 , H01L21/20 , G11C11/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例通常包括形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件的添加而具有改进的器件切换性能和寿命的电阻式开关存储元件。限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。在一个实施例中，限流部件包括隧道氧化物，隧道氧化物是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

5. 发明授权

US08686386B2 Nonvolatile memory device using a varistor as a current limiter element 有权
标题翻译：使用压敏电阻作为限流元件的非易失性存储器件
公开(公告)号：US08686386B2
公开(公告)日：2014-04-01
申请号：US13399815
申请日：2012-02-17
申请人： Mihir Tendulkar , Imran Hashim , Yun Wang
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang
IPC分类号： H01L29/02 , H01L47/00 , H01L29/04 , H01L29/06
CPC分类号： H01L45/1608 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. The electrical properties of the current limiting component are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element of the nonvolatile memory device. In some embodiments, the current limiting component comprises a varistor that is a current limiting material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. Typically, resistive switching memory elements may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices, such as digital cameras, mobile telephones, handheld computers, and music players.
摘要翻译：本发明的实施例包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加设置在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。限流部件的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件的电阻式开关存储器元件中添加固定串联电阻来降低通过可变电阻层的电流。在一些实施例中，限流部件包括变阻器，其是设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。通常，电阻式开关存储器元件可以形成为可用于各种电子设备（例如数码相机，移动电话，手持式计算机和音乐播放器）的大容量非易失性存储器集成电路的一部分。

6. 发明申请

US20130200325A1 Nonvolatile Memory Device Using A Tunnel Nitride As A Current Limiter Element 有权
标题翻译：使用隧道氮化物作为限流元件的非易失性存储器件
公开(公告)号：US20130200325A1
公开(公告)日：2013-08-08
申请号：US13368118
申请日：2012-02-07
申请人： Mihir Tendulkar , Yun Wang
发明人： Mihir Tendulkar , Yun Wang
IPC分类号： H01L45/00
CPC分类号： H01L45/1608 , G11C13/0007 , G11C13/0069 , G11C2013/0078 , G11C2213/15 , G11C2213/32 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises a resistive material that is configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel nitride that is a current limiting material that is disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.
摘要翻译：本发明的实施例通常包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。在一个实施例中，限流部件包括被配置为改善电阻式开关存储器元件的开关性能和寿命的电阻材料。电流限制层的电性能被配置为通过在电阻式开关存储元件中增加固定串联电阻来在逻辑状态编程步骤（即，“设置”和“复位”步骤）期间降低通过可变电阻层的电流存在于非易失性存储器件中。在一个实施例中，限流部件包括隧道氮化物，其是限制在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。

7. 发明申请

US20130214237A1 NONVOLATILE MEMORY DEVICE USING A TUNNEL OXIDE LAYER AND OXYGEN BLOCKING LAYER AS A CURRENT LIMITER ELEMENT 有权
标题翻译：使用隧道氧化物层和氧气阻挡层作为电流限制元件的非易失性存储器件
公开(公告)号：US20130214237A1
公开(公告)日：2013-08-22
申请号：US13399728
申请日：2012-02-17
申请人： Mihir Tendulkar , Imran Hashim , Yun Wang
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang
IPC分类号： H01L47/00 , H01L21/02
CPC分类号： H01L45/08 , G11C2213/51 , H01L45/12 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/16
摘要： Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element with improved device switching performance and lifetime, due to the addition of a current limiting component. In one embodiment, the current limiting component comprises a resistive material configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide layer that is a current limiting material and an oxygen barrier layer that is an oxygen deficient material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.
摘要翻译：本发明的实施例包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。在一个实施例中，限流部件包括被配置为改善电阻式开关存储器元件的开关性能和寿命的电阻材料。电流限制层的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件中存在的电阻式开关存储器元件中增加固定串联电阻来降低通过可变电阻层的电流。在一个实施例中，限流部件包括作为限流材料的隧道氧化物层和作为设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的缺氧材料的氧阻挡层。

8. 发明授权

US09299926B2 Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter element 有权
标题翻译：使用隧道氧化物层和氧阻挡层作为限流元件的非易失性存储器件
公开(公告)号：US09299926B2
公开(公告)日：2016-03-29
申请号：US13399728
申请日：2012-02-17
申请人： Mihir Tendulkar , Imran Hashim , Yun Wang , Tim Minvielle , Takeshi Yamaguchi
发明人： Mihir Tendulkar , Imran Hashim , Yun Wang , Tim Minvielle , Takeshi Yamaguchi
IPC分类号： H01L21/02 , H01L45/00
CPC分类号： H01L45/08 , G11C2213/51 , H01L45/12 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/16
摘要： Embodiments of the invention include a method of forming a nonvolatile memory device that contains a resistive switching memory element with improved device switching performance and lifetime, due to the addition of a current limiting component. In one embodiment, the current limiting component comprises a resistive material configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel oxide layer that is a current limiting material and an oxygen barrier layer that is an oxygen deficient material disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.
摘要翻译：本发明的实施例包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。在一个实施例中，限流部件包括被配置为改善电阻式开关存储器元件的开关性能和寿命的电阻材料。电流限制层的电气特性被配置为在逻辑状态编程步骤期间通过在非易失性存储器件中存在的电阻式开关存储器元件中增加固定串联电阻来降低通过可变电阻层的电流。在一个实施例中，限流部件包括作为限流材料的隧道氧化物层和作为设置在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的缺氧材料的氧阻挡层。

9. 发明授权

US09030018B2 Test vehicles for evaluating resistance of thin layers 有权
标题翻译：用于评估薄层电阻的测试车辆
公开(公告)号：US09030018B2
公开(公告)日：2015-05-12
申请号：US13624104
申请日：2012-09-21
申请人： Mihir Tendulkar , David Chi
发明人： Mihir Tendulkar , David Chi
IPC分类号： H01L29/40 , H01L21/66 , H01L23/532
CPC分类号： H01L22/34 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： Provided are test vehicles for evaluating various semiconductor materials. These materials may be used for various integrated circuit components, such as embedded resistors of resistive random access memory cells. Also provided are methods of fabricating and operating these test vehicles. A test vehicle may include two stacks protruding through an insulating body. Bottom ends of these stacks may include n-doped poly-silicon and may be interconnected by a connector. Each stack may include a titanium nitride layer provided over the poly-silicon end, followed by a titanium layer over the titanium nitride layer and a noble metal layer over the titanium layer. The noble metal layer extends to the top surface of the insulating body and forms a contact surface. The titanium layer may be formed in-situ with the noble metal layer to minimize oxidation of the titanium layer, which is used as an adhesion and oxygen getter.
摘要翻译：提供用于评估各种半导体材料的测试车辆。这些材料可用于各种集成电路部件，例如电阻随机存取存储器单元的嵌入式电阻器。还提供了制造和操作这些测试车辆的方法。测试车辆可以包括通过绝缘体突出的两个堆叠。这些堆叠的底端可以包括n掺杂的多晶硅，并且可以通过连接器互连。每个堆叠可以包括设置在多晶硅端上的氮化钛层，随后是氮化钛层上的钛层和钛层上的贵金属层。贵金属层延伸到绝缘体的顶表面并形成接触表面。钛层可以与贵金属层原位形成，以最小化用作粘合和氧气吸气剂的钛层的氧化。

10. 发明授权

US08552413B2 Nonvolatile memory device using a tunnel nitride as a current limiter element 有权
标题翻译：使用隧道氮化物作为限流元件的非易失性存储器件
公开(公告)号：US08552413B2
公开(公告)日：2013-10-08
申请号：US13368118
申请日：2012-02-07
申请人： Mihir Tendulkar , Tim Minvielle , Yun Wang , Takeshi Yamaguchi
发明人： Mihir Tendulkar , Tim Minvielle , Yun Wang , Takeshi Yamaguchi
IPC分类号： H01L29/02
CPC分类号： H01L45/1608 , G11C13/0007 , G11C13/0069 , G11C2013/0078 , G11C2213/15 , G11C2213/32 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146 , H01L45/1616
摘要： Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises a resistive material that is configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel nitride that is a current limiting material that is disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.
摘要翻译：本发明的实施例通常包括一种形成非易失性存储器件的方法，该非易失性存储器件包含由于添加限定在其中的限流部件而具有改进的器件切换性能和寿命的电阻式开关存储元件。在一个实施例中，限流部件包括被配置为改善电阻式开关存储器元件的开关性能和寿命的电阻材料。电流限制层的电性能被配置为通过在电阻式开关存储元件中增加固定串联电阻来在逻辑状态编程步骤（即，“设置”和“复位”步骤）期间降低通过可变电阻层的电流存在于非易失性存储器件中。在一个实施例中，限流部件包括隧道氮化物，其是限制在非易失性电阻式开关存储器件中的电阻式开关存储器元件内的限流材料。

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