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61. 发明申请

US20050170655A1 Reticle fabrication using a removable hard mask 有权
标题翻译：使用可移除的硬掩模的标线制造
公开(公告)号：US20050170655A1
公开(公告)日：2005-08-04
申请号：US10768919
申请日：2004-01-30
申请人： Christopher Bencher , Melvin Montgomery , Alexander Buxbaum , Yung-Hee Lee , Jian Ding , Gilad Almogy , Wendy Yeh
发明人： Christopher Bencher , Melvin Montgomery , Alexander Buxbaum , Yung-Hee Lee , Jian Ding , Gilad Almogy , Wendy Yeh
IPC分类号： G03F1/08 , G03F7/09 , H01L21/311
CPC分类号： G03F1/68 , G03F1/46 , G03F1/80
摘要： We have reduced the critical dimension bias for reticle fabrication. Pattern transfer to the radiation-blocking layer of the reticle substrate essentially depends upon use of a hard mask to which the pattern is transferred from a photoresist. The photoresist pull back which occurs during pattern transfer to the hard mask is minimalized. In addition, a hard mask material having anti-reflective properties which are matched to the reflective characteristics of the radiation-blocking layer enables a reduction in critical dimension size and an improvement in the pattern feature integrity in the hard mask itself. An anti-reflective hard mask layer left on the radiation-blocking layer provides functionality when the reticle is used in a semiconductor device manufacturing process.
摘要翻译：我们已经减少了标线制造的临界尺寸偏差。图案转印到掩模版基板的辐射阻挡层基本上取决于使用从光致抗蚀剂转移图案的硬掩模。在图案转印到硬掩模期间发生的光致抗蚀剂拉回最小化。此外，具有与防辐射层的反射特性相匹配的抗反射性能的硬掩模材料能够降低临界尺寸尺寸并改善硬掩模本身中图案特征的完整性。当在半导体器件制造工艺中使用掩模版时，留在辐射阻挡层上的抗反射硬掩模层提供功能。

62. 发明授权

US06284149B1 High-density plasma etching of carbon-based low-k materials in a integrated circuit 失效
标题翻译：集成电路中碳基低k材料的高密度等离子体蚀刻
公开(公告)号：US06284149B1
公开(公告)日：2001-09-04
申请号：US09156956
申请日：1998-09-18
申请人： Zongyu Li , Karsten Schneider , Axel Walter , Jian Ding
发明人： Zongyu Li , Karsten Schneider , Axel Walter , Jian Ding
IPC分类号： H01L21033
CPC分类号： H01L21/7681 , H01J37/321 , H01J37/32706 , H01L21/31138 , H01L21/76804 , H01L21/76807
摘要： A plasma etching process for etching a carbon-based low-k dielectric layer in a multi-layer inter-level dielectric. The low-k dielectric may be divinyl siloxane-benzocyclobutene (BCB), which contains about 4% silicon, the remainder being carbon, hydrogen, and a little oxygen. The BCB etch uses an etching gas of oxygen, a fluorocarbon, and nitrogen and no argon. An N2/O2 ratio of between 1:1 and 3:1 produces vertical walls in the BCB. In a dual-damascene structure, the inter-level dielectric includes two BCB layers, each underlaid by a respective stop layer. Photolithography with an organic photoresist needs a hard mask of silicon oxide or nitride over the upper BCB layer. After the BCB etch has cleared all the photoresist, the bias power applied to the cathode supporting the wafer needs to be set to a low value while the separately controlled plasma source power is set reasonably high, thereby reducing faceting of the exposed hard mask. Chamber pressures of no more than 5 milliTorr increase the selectivity of BCB over photoresist. Substrate temperatures of less than 0° C. increase the BCB etch rate. A low fluorocarbon flow increases the etch rate, but a minimum amount of fluorocarbon is required for the silicon component of BCB. In a counterbore dual-damascene etch, the lower stop layer is composed of nitride, and the preferred fluorocarbon is difluoroethane (CH2F2). A silicon-free carbon-based low-k dielectric can be etched under similar chamber conditions with a etching gas of oxygen and nitrogen in about equal amounts but including no fluorocarbon nor argon.
摘要翻译：一种用于蚀刻多层级间电介质中的碳基低k电介质层的等离子体蚀刻工艺。低k电介质可以是二乙烯基硅氧烷 - 苯并环丁烯（BCB），其含有约4％的硅，其余是碳，氢和少量的氧。 BCB蚀刻使用氧气，碳氟化合物和氮气的蚀刻气体，而不使用氩气。在1：1和3：1之间的N2 / O2比率在BCB中产生垂直壁。在双镶嵌结构中，层间电介质包括两个BCB层，每个BCB层由相应的停止层覆盖。使用有机光致抗蚀剂的光刻法需要在上BCB层上的氧化硅或氮化物的硬掩模。在BCB蚀刻已经清除了所有光致抗蚀剂之后，施加到支撑晶片的阴极的偏置功率需要被设置为低值，而单独控制的等离子体源功率被设置得相当高，从而减少了暴露的硬掩模的刻痕。室压不超过5毫乇可提高BCB对光致抗蚀剂的选择性。衬底温度小于0℃会增加BCB蚀刻速率。低碳氟化合物流量增加了蚀刻速率，但BCB的硅组分需要最少量的碳氟化合物。在沉孔双镶嵌蚀刻中，下停止层由氮化物组成，优选的碳氟化合物是二氟乙烷（CH 2 F 2）。可以在类似的腔室条件下用大约相等量的氧和氮的蚀刻气体蚀刻无硅碳基低k电介质，但不包括氟碳和氩。

63. 发明授权

US5583737A Electrostatic chuck usable in high density plasma 失效
标题翻译：静电吸盘可用于高密度等离子体
公开(公告)号：US5583737A
公开(公告)日：1996-12-10
申请号：US452351
申请日：1995-05-26
申请人： Kenneth S. Collins , John R. Trow , Joshua Chiu-Wing Tsui , Craig A. Roderick , Nicolas J. Bright , Jeffrey Marks , Tetsuya Ishikawa , Jian Ding
发明人： Kenneth S. Collins , John R. Trow , Joshua Chiu-Wing Tsui , Craig A. Roderick , Nicolas J. Bright , Jeffrey Marks , Tetsuya Ishikawa , Jian Ding
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , H01L21/6831
摘要： An electrostatic chuck for holding a wafer in a plasma processing chamber, the chuck including a pedestal having a top surface, an internal manifold for carrying a cooling gas, and a first plurality of holes leading from the internal manifold toward said top surface; and a dielectric layer on the top surface of the pedestal. The dielectric layer has a top side and second plurality of holes, each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes and the second hole aligned therewith form a different one of the plurality of passages. The passages are concentrated in regions of the dielectric layer that are in proximity to regions of higher leakage of cooling gas when the wafer is held against the electrostatic chuck by an electrostatic force.
摘要翻译：一种用于将晶片保持在等离子体处理室中的静电卡盘，所述卡盘包括具有顶表面的基座，用于承载冷却气体的内部歧管以及从所述内部歧管向所述顶部表面引导的第一多个孔; 以及在基座的顶表面上的介电层。电介质层具有顶侧和第二多个孔，每个孔与基座中的第一多个孔的不同孔中的一个对准。第一和第二孔形成从内部歧管延伸到电介质层的顶侧的多个通道，并且冷却气体通过该通道供应到晶片的背面。与其对准的第一孔和第二孔中的每一个形成多个通道中的不同的一个。当晶片通过静电力固定在静电卡盘上时，通道集中在电介质层的靠近冷却气体泄漏较高区域的区域中。

64. 发明授权

US11464826B2 Composition comprising an algal proteoglycan extract and use thereof 有权
公开(公告)号：US11464826B2
公开(公告)日：2022-10-11
申请号：US16922553
申请日：2020-07-07
申请人： Qing Qi , Jian Ding
发明人： Qing Qi , Jian Ding
IPC分类号： A61K38/16 , A61K36/02 , A61P35/00 , A61K9/00 , A61K31/282 , A61K31/513 , A61K31/675 , A61K31/704 , A61K31/7048 , A61K35/748 , A61K45/06
摘要： The present application provides use of an algal proteoglycan extract and a composition comprising the same in treating or preventing tumor, pain, inflammation or diseases mediated by inflammatory factors.

65. 发明申请

US20200338159A1 COMPOSITION COMPRISING AN ALGAL PROTEOGLYCAN EXTRACT AND USE THEREOF 审中-公开
公开(公告)号：US20200338159A1
公开(公告)日：2020-10-29
申请号：US16922553
申请日：2020-07-07
申请人： Qing Qi , Jian Ding
发明人： Qing Qi , Jian Ding
IPC分类号： A61K38/16 , A61K36/02 , A61P35/00 , A61K9/00 , A61K31/282 , A61K31/513 , A61K31/675 , A61K31/704 , A61K31/7048 , A61K35/748 , A61K45/06
摘要： The present application provides use of an algal proteoglycan extract and a composition comprising the same in treating or preventing tumor, pain, inflammation or diseases mediated by inflammatory factors.

66. 发明申请

US20140296216A1 PYRIMIDO[4,5-D]PYRIMIDINYL COMPOUNDS, PHARMACEUTICAL COMPOSITIONS AND USES THEREOF 审中-公开
标题翻译：吡咯二酮[4,5-D]吡啶化合物，药物组合物及其用途
公开(公告)号：US20140296216A1
公开(公告)日：2014-10-02
申请号：US14125304
申请日：2011-12-21
申请人： Ke Ding , Shaohua Chang , Shilin Xu , Lianwen Zhang , Zhengchao Tu , Jian Ding , Meiyu Geng , Yi Chen
发明人： Ke Ding , Shaohua Chang , Shilin Xu , Lianwen Zhang , Zhengchao Tu , Jian Ding , Meiyu Geng , Yi Chen
IPC分类号： C07D487/04
CPC分类号： C07D487/04 , A61K31/519 , A61K31/5377 , A61K31/541 , A61K31/551
摘要： A compound of formula (I) or (II) and use of the compound in the preparation of drugs for treating cancer are disclosed. The study shows that the compounds can inhibit the growth of many kinds of tumor cells, can be used for targeting epidermal growth factor receptor (EGFR), and particularly can inhibit tumor cells with single or multiple mutations of EGFR (T790M). Therefore, the compound can be used as EGFR inhibitor to treat cancer and has a relatively large application value.
摘要翻译：公开了式（I）或（II）的化合物和该化合物在制备用于治疗癌症的药物中的用途。该研究表明，该化合物可抑制多种肿瘤细胞的生长，可用于靶向表皮生长因子受体（EGFR），特别是可以单独或多次EGFR（T790M）突变抑制肿瘤细胞。因此，该化合物可用作EGFR抑制剂治疗癌症，具有较大的应用价值。

67. 发明授权

US08491791B2 Fluidics device 有权
标题翻译：流体装置
公开(公告)号：US08491791B2
公开(公告)日：2013-07-23
申请号：US13552356
申请日：2012-07-18
申请人： Lee O. Lomas , Jian Ding , Egisto Boschetti
发明人： Lee O. Lomas , Jian Ding , Egisto Boschetti
IPC分类号： B01D63/00 , B01D61/00 , B01D15/08 , G01N1/00
CPC分类号： G01N30/461 , B01D15/325 , B01D15/362 , B01D15/363 , B01L3/5025 , B01L3/50255 , B01L3/563 , B01L2200/026 , B01L2200/028 , B01L2300/0681 , B01L2300/0829 , B01L2300/087 , B01L2400/0487 , C07K1/34 , G01N27/44704 , G01N27/44795 , G01N30/466 , G01N30/468 , Y10T137/2224 , Y10T137/794 , Y10T137/86187 , Y10T436/255
摘要： The present invention contemplates various devices that are configured to separate a sample, which contains more than one unique species, into any desired number of sub-samples by passing the sample across a like number of separation media configured for a first separation protocol. Each of the sub-samples may be further separated by an additional separation protocol, thereby creating a plurality of mini-samples, each of which may be further separated and/or analyzed. The invention also contemplates using a simple method of using conduits to form a fluid path that passes through a plurality of separation media, each of which media is configured to isolate a particular sub-sample. After various sub-samples of the sample are isolated by the various separation media, the conduits may be removed, thereby enabling each of the isolated sub-samples to be further separated and/or analyzed independent of any other sub-sample.
摘要翻译：本发明考虑了通过将样品穿过配置用于第一分离方案的相似数量的分离介质，将被配置成将含有多于一种独特物种的样品分离成任何所需数量的子样品的各种装置。每个子样品可以通过另外的分离方案进一步分离，从而产生多个微型样品，每个小样品可进一步分离和/或分析。本发明还考虑使用简单的方法来使用导管来形成通过多个分离介质的流体路径，其中每个介质被配置为隔离特定的子样品。在通过各种分离介质分离样品的各种亚样品之后，可以去除导管，从而使每个分离的子样品能够独立于任何其它亚样品进一步分离和/或分析。

68. 发明授权

US08246832B2 Fluidics device 有权
标题翻译：流体装置
公开(公告)号：US08246832B2
公开(公告)日：2012-08-21
申请号：US11915151
申请日：2006-01-19
申请人： Lee O. Lomas , Jian Ding , Egisto Boschetti
发明人： Lee O. Lomas , Jian Ding , Egisto Boschetti
IPC分类号： B01D63/00
CPC分类号： G01N30/461 , B01D15/325 , B01D15/362 , B01D15/363 , B01L3/5025 , B01L3/50255 , B01L3/563 , B01L2200/026 , B01L2200/028 , B01L2300/0681 , B01L2300/0829 , B01L2300/087 , B01L2400/0487 , C07K1/34 , G01N27/44704 , G01N27/44795 , G01N30/466 , G01N30/468 , Y10T137/2224 , Y10T137/794 , Y10T137/86187 , Y10T436/255
摘要： The present invention contemplates various devices that are configured to separate a sample, which contains more than one unique species, into any desired number of sub-samples by passing the sample across a like number of separation media configured for a first separation protocol. Each of the sub-samples may be further separated by an additional separation protocol, thereby creating a plurality of mini-samples, each of which may be further separated and/or analyzed. The invention also contemplates using a simple method of using conduits to form a fluid path that passes through a plurality of separation media, each of which media is configured to isolate a particular sub-sample. After various sub-samples of the sample are isolated by the various separation media, the conduits may be removed, thereby enabling each of the isolated sub-samples to be further separated and/or analyzed independent of any other sub-sample.
摘要翻译：本发明考虑了通过将样品穿过配置用于第一分离方案的相似数量的分离介质，将被配置成将含有多于一种独特物种的样品分离成任何所需数量的子样品的各种装置。每个子样品可以通过另外的分离方案进一步分离，从而产生多个微型样品，每个小样品可进一步分离和/或分析。本发明还考虑使用简单的方法来使用导管来形成通过多个分离介质的流体路径，其中每个介质被配置为隔离特定的子样品。在通过各种分离介质分离样品的各种亚样品之后，可以去除导管，从而使每个分离的子样品能够独立于任何其它亚样品进一步分离和/或分析。

69. 发明申请

US20100178600A1 PROCESS FOR ETCHING A METAL LAYER SUITABLE FOR USE IN PHOTOMASK FABRICATION 有权
标题翻译：用于蚀刻适用于光电制造的金属层的工艺
公开(公告)号：US20100178600A1
公开(公告)日：2010-07-15
申请号：US12728455
申请日：2010-03-22
申请人： Madhavi R. Chandrachood , Nicole Sandlin , Yung-Hee Yvette Lee , Jian Ding
发明人： Madhavi R. Chandrachood , Nicole Sandlin , Yung-Hee Yvette Lee , Jian Ding
IPC分类号： G03F7/20 , G03F1/00
CPC分类号： C03C17/06 , C03C2217/26 , C03C2218/33 , C03C2218/34 , C23F4/00 , G03F1/54 , G03F1/80 , H01J37/321 , H01J2237/3341
摘要： Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.
摘要翻译：提供了用于蚀刻设置在诸如光刻掩模之类的基板上的金属层的方法和设备。一方面，提供了一种处理基板的方法，包括将具有设置在处理室中的光学透明材料上的金属层的基板定位，引入包含含氧气体，含氯气体和将含氯气体的无卤素气体和任选的惰性气体加入到处理室中，在处理室中产生处理气体的等离子体，并蚀刻设置在基板上的金属层的暴露部分。

70. 发明申请

US20090325996A1 CAMPTOTHECIN DERIVATIVES AND THEIR USE 有权
标题翻译： CAMPTOTHECIN衍生物及其用途
公开(公告)号：US20090325996A1
公开(公告)日：2009-12-31
申请号：US12282397
申请日：2007-01-17
申请人： Wei Lu , Jian Ding , Heyong Gao , Liping Lin , Yi Chen
发明人： Wei Lu , Jian Ding , Heyong Gao , Liping Lin , Yi Chen
IPC分类号： A61K31/4375 , C07D491/22 , A61P35/00
CPC分类号： C07D491/22
摘要： New camptothecin derivatives with the following structure of the formula (I), their use and the pharmaceutical compositions containing the same. The compounds of the present invention have good anti-tumor activities and good solubility in water, and can be used in development of medicines.
摘要翻译：具有以下结构式（I）的新的喜树碱衍生物，它们的用途和含有它们的药物组合物。本发明化合物具有良好的抗肿瘤活性和在水中的良好溶解性，可用于药物的开发。

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