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61. 发明申请

WO2013174069A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME 审中-公开
标题翻译：半导体结构及其形成方法
公开(公告)号：WO2013174069A1
公开(公告)日：2013-11-28
申请号：PCT/CN2012/078728
申请日：2012-07-16
申请人： TSINGHUA UNIVERSITY , WANG, Jing , GUO, Lei , WANG, Wei
发明人： WANG, Jing , GUO, Lei , WANG, Wei
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823814
摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate (100); a source region and a drain region defined in the semiconductor substrate (100) respectively, and a trench (200, 300) formed in the source region and/or the drain region, in which a rare earth oxide layer (400) is formed in the trench (200, 300); a source (500) and/or a drain (600) formed on the rare earth oxide layer (400); and a channel region (700) formed between the source (500) and the drain (600). A relationship between a lattice constant a of the rare earth oxide layer (400) and a lattice constant b of a semiconductor material of the source (500) and/or the drain (600) and/or the channel region (700) is a = (n ?c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0
摘要翻译：提供半导体结构及其形成方法。半导体结构包括：半导体衬底（100）; 分别限定在半导体衬底（100）中的源极区和漏极区以及形成在源区和/或漏区中的在其中形成稀土氧化物层（400）的沟槽（200,300）沟槽（200,300）; 在所述稀土氧化物层（400）上形成的源极（500）和/或漏极（600）。以及形成在源极（500）和漏极（600）之间的沟道区域（700）。稀土氧化物层（400）的晶格常数a与源极（500）和/或漏极（600）和/或沟道区域（700）的半导体材料的晶格常数b之间的关系为 =（n≥c）b，其中n是整数，c是晶格常数的失配比，0

62. 发明申请

WO2013135005A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME 审中-公开
标题翻译：半导体结构及其形成方法
公开(公告)号：WO2013135005A1
公开(公告)日：2013-09-19
申请号：PCT/CN2012/076240
申请日：2012-05-29
申请人： TSINGHUA UNIVERSITY , WANG, Jing , GUO, Lei , WANG, Wei
发明人： WANG, Jing , GUO, Lei , WANG, Wei
IPC分类号： H01L27/092 , H01L21/762
CPC分类号： H01L21/76283 , H01L29/1054 , H01L29/24
摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate (100); an active region formed in the semiconductor substrate (100), in which the active region comprises: a channel region (200), and a source region (300) and a drain region (400) formed on both sides of the channel region (200) respectively; and a first isolation trench (500) formed in the semiconductor substrate (100) and on both sides of the active region, in which a first rare earth oxide layer (502) is formed in each first isolation trench (500) to produce a stress in the channel region (200) in a channel length direction.
摘要翻译：提供半导体结构及其形成方法。半导体结构包括：半导体衬底（100）; 形成在所述半导体衬底（100）中的有源区，其中所述有源区包括沟道区（200），以及形成在所述沟道区（200）的两侧上的源区（300）和漏区（400））分别; 以及形成在所述半导体衬底（100）中并且在所述有源区域的两侧上的第一隔离沟槽（500），其中在每个第一隔离沟槽（500）中形成有第一稀土氧化物层（502）以产生应力在通道区域（200）中。

63. 发明申请

WO2013120329A1 FLASH MEMORY AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：闪存及其制造方法
公开(公告)号：WO2013120329A1
公开(公告)日：2013-08-22
申请号：PCT/CN2012/075901
申请日：2012-05-22
申请人： TSINGHUA UNIVERSITY , CUI, Ning , LIANG, Renrong , WANG, Jing , XU, Jun
发明人： CUI, Ning , LIANG, Renrong , WANG, Jing , XU, Jun
IPC分类号： H01L29/792 , G11C16/04
CPC分类号： G11C16/04 , H01L21/84 , H01L27/1203 , H01L29/66833 , H01L29/792
摘要： A flash memory and a method for fabricating the same are provided. The flash memory comprises: a semiconductor substrate (100); a storage medium layer (200) formed on the semiconductor substrate (100) and comprising from bottom to top: a tunneling oxide layer (202), a silicon nitride layer (204) and a blocking oxide layer (206); a semiconductor layer (300) formed on the storage medium layer (200) and comprising a channel region (302) and a source region (304) and a drain region (306) located on both sides of the channel region (302) respectively; and a gate stack formed on the channel region (302) and comprising a gate dielectric (402) and a gate (404) formed on the gate dielectric (402).
摘要翻译：提供闪速存储器及其制造方法。闪存包括：半导体衬底（100）; 形成在所述半导体衬底上并从底部到顶部包括隧道氧化物层（202），氮化硅层（204）和阻挡氧化物层（206）的存储介质层（200）; 形成在所述存储介质层（200）上的半导体层（300），分别包括位于所述沟道区域（302）两侧的沟道区（302）和源极区（304）和漏极区（306）以及形成在所述沟道区域（302）上并且包括形成在所述栅极电介质（402）上的栅极电介质（402）和栅极（404）的栅极堆叠。

64. 发明申请

WO2013029278A1 A METHOD FOR PREPARING FUNCTIONALIZED SILICON NANOPARTICLES 审中-公开
标题翻译：一种制备官能化硅纳米粒子的方法
公开(公告)号：WO2013029278A1
公开(公告)日：2013-03-07
申请号：PCT/CN2011/079304
申请日：2011-09-02
申请人： NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY , SUN, Shuqing , WANG, Jing , PENG, Fei
发明人： SUN, Shuqing , WANG, Jing , PENG, Fei
IPC分类号： B82Y40/00 , B82B3/00 , B82B1/00
CPC分类号： C01B33/02 , B82Y30/00 , B82Y40/00
摘要： Disclosed herein is a method for preparing functionalized silicon nanoparticles, including: (1) providing hydrogen-terminated silicon nanoparticles; and (2) subjecting the hydrogen-terminated silicon nanoparticles to hydrosilylation with a hydrosilylating reagent in the presence of a microwave irradiation. This method contributes several advantages such as simple work-up procedure, shorter reaction time, milder conditions and environmental friendliness.
摘要翻译：本文公开了一种制备官能化硅纳米颗粒的方法，包括：（1）提供氢封端的硅纳米颗粒; 和（2）在微波辐射存在下，用氢化硅烷化试剂使氢封端的硅纳米粒子进行氢化硅烷化。该方法具有简单的处理步骤，更短的反应时间，更温和的条件和环境友好性等优点。

65. 发明申请

WO2012136066A1 COMPLEMENTARY TUNNELING FIELD EFFECT TRANSISTOR AND METHOD FOR FORMING THE SAME 审中-公开
标题翻译：补充隧道场效应晶体管及其形成方法
公开(公告)号：WO2012136066A1
公开(公告)日：2012-10-11
申请号：PCT/CN2011/083069
申请日：2011-11-28
申请人： TSINGHUA UNIVERSITY , LIANG, Renrong , XU, Jun , WANG, Jing
发明人： LIANG, Renrong , XU, Jun , WANG, Jing
IPC分类号： H01L29/78 , H01L29/06 , H01L21/336
CPC分类号： H01L29/66356 , H01L29/0657 , H01L29/0847 , H01L29/165 , H01L29/4236 , H01L29/7391
摘要： A complementary tunneling field effect transistor and a method for forming the same are provided. The complementary tunneling field effect transistor comprises: a substrate (1100); an insulating layer (1200), formed on the substrate (1100); a first semiconductor layer (1300), formed on the insulating layer (1200) and comprising a first doped region (1310) and a second doped region (1320); a first type TFET vertical structure (1400) formed on a first part (1311) of the first doped region (1310) and a second type TFET vertical structure (1500) formed on a first part (1321) of the second doped region (1320), in which a second part (1312) of the first doped region (1310) is connected with a second part (1322) of the second doped region (1320) and a connecting portion between the second part (1312) of the first doped region (1310) and the second part (1322) of the second doped region (1320) is used as a drain output (7000); and a U-shaped gate structure (1600), formed between the first type TFET vertical structure (1400) and the second type TFET vertical structure (1500).
摘要翻译：提供互补隧道场效应晶体管及其形成方法。互补隧道场效应晶体管包括：衬底（1100）; 形成在所述基板（1100）上的绝缘层（1200）; 形成在所述绝缘层（1200）上并包括第一掺杂区域（1310）和第二掺杂区域（1320）的第一半导体层（1300）; 形成在第一掺杂区域（1310）的第一部分（1311）上的第一类型TFET垂直结构（1400）和形成在第二掺杂区域（1320）的第一部分（1321）上的第二类型TFET垂直结构（1500）），其中第一掺杂区域（1310）的第二部分（1312）与第二掺杂区域（1320）的第二部分（1322）连接，并且第一掺杂区域的第二部分（1312）与第一掺杂区域使用第二掺杂区域（1320）的区域（1310）和第二部分（1322）作为漏极输出（7000）; 以及形成在第一类型TFET垂直结构（1400）和第二类型TFET垂直结构（1500）之间的U形门结构（1600）。

66. 发明申请

WO2012135841A2 EMT SIGNATURES AND PREDICTIVE MARKERS AND METHOD OF USING THE SAME 审中-公开
标题翻译： EMT标志和预测标记及其使用方法
公开(公告)号：WO2012135841A2
公开(公告)日：2012-10-04
申请号：PCT/US2012/031873
申请日：2012-04-02
申请人： BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM , HEYMACH, John, V. , BYERS, Lauren, Averett , WANG, Jing , COOMBES, Kevin, R. , MINNA, John, D. , GIRARD, Luc
发明人： HEYMACH, John, V. , BYERS, Lauren, Averett , WANG, Jing , COOMBES, Kevin, R. , MINNA, John, D. , GIRARD, Luc
IPC分类号： G01N33/574 , C12Q1/68
CPC分类号： C12Q1/6886 , A61K31/517 , A61K31/519 , A61K31/5377 , C12Q2600/106 , C12Q2600/158 , G01N33/57423 , G01N2800/52
摘要： EMT signatures and markers useful for characterizing the status of epithelial cancers and for predicting drug responses in patients having non-small ceil lung cancer are provided together with methods of using the same.
摘要翻译：提供用于表征上皮癌状态和用于预测具有非小细胞肺癌的患者的药物反应的EMT特征和标记物及其使用方法。

67. 发明申请

WO2012122669A1 WIND TURBINE BLADES WITH AIR PRESSURE SENSORS 审中-公开
标题翻译：风力涡轮叶片与空气压力传感器
公开(公告)号：WO2012122669A1
公开(公告)日：2012-09-20
申请号：PCT/CN2011/000395
申请日：2011-03-14
申请人： GENERAL ELECTRIC COMPANY , XIONG, Wei , ZHANG, Danian , HUANG, Xiongzhe , WANG, Jing , XIA, Jingyun
发明人： XIONG, Wei , ZHANG, Danian , HUANG, Xiongzhe , WANG, Jing , XIA, Jingyun
IPC分类号： F03D11/00 , F03D7/00 , G01M9/06 , G01L13/00
CPC分类号： F03D11/0091 , F03D7/042 , F03D17/00 , F05B2270/80 , G01L13/00 , G01M9/065
摘要： A wind turbine blade has a suction side shell member and a pressure side shell member. The shell members are joined along a leading and trailing edge from a root to a tip of the blade and defining an internal cavity of the blade. A pressure sensor is configured on at least one of the suction or pressure side shell members. The pressure sensor further includes a body mounted to an inner surface of the respective shell member within the internal cavity. A sensing element has a first side exposed to external air pressure through a passage in the respective shell member, and an opposite second side exposed to a reference pressure. Control circuitry within the body generates a variable output signal as a function of a pressure differential between the external air pressure and reference pressure experienced by the sensing element.
摘要翻译：风力涡轮机叶片具有吸力侧壳体构件和压力侧壳体构件。外壳构件沿着前缘和后缘从叶片的根部连接到尖端并且限定叶片的内部空腔。压力传感器构造在吸入侧或压力侧壳体构件中的至少一个上。压力传感器还包括安装在内部空腔内的相应外壳构件的内表面的主体。感测元件具有通过相应壳体构件中的通道暴露于外部空气压力的第一侧和暴露于参考压力的相对的第二侧。体内的控制电路产生可变输出信号，作为感测元件所经受的外部空气压力和参考压力之间的压力差的函数。

68. 发明申请

WO2012100519A1 GE-ON-INSULATOR STRUCTURE AND METHOD FOR FORMING THE SAME 审中-公开
标题翻译：导通绝缘体结构及其形成方法
公开(公告)号：WO2012100519A1
公开(公告)日：2012-08-02
申请号：PCT/CN2011/077703
申请日：2011-07-27
申请人： TSINGHUA UNIVERSITY , WANG, Jing , XU, Jun , GUO, Lei
发明人： WANG, Jing , XU, Jun , GUO, Lei
IPC分类号： H01L21/84 , H01L27/12
CPC分类号： H01L29/78684 , H01L21/76256 , H01L29/4908 , H01L29/7842 , H01L29/78603 , H01L29/78609
摘要： A method for forming a Ge-on-insulator structure is provided, comprising steps of: forming a Ge layer (1200) on a substrate (2000); treating a first surface of the Ge layer (1200) to form a first semiconducting metal-germanide passivation layer (1300); bonding the first semiconducting metal-germanide passivation layer (1300) with a silicon substrate (1100), wherein on a surface of the silicon substrate (1100) an oxide insulating layer is formed; and removing the substrate (2000). Further, a Ge-on-insulator structure formed by the method is also provided.
摘要翻译：提供一种形成绝缘体上Ge结构的方法，包括以下步骤：在衬底（2000）上形成Ge层（1200）; 处理所述Ge层（1200）的第一表面以形成第一半导体金属 - 锗化物钝化层（1300）; 将第一半导体金属 - 锗化物钝化层（1300）与硅衬底（1100）接合，其中在所述硅衬底（1100）的表面上形成氧化物绝缘层; 并移除基板（2000）。此外，还提供了通过该方法形成的绝缘体上Ge结构。

69. 发明申请

WO2012071469A3 HISTONE DEMETHYLASE INHIBITORS AND USES THEREOF FOR TREATMENT O F CANCER 审中-公开
公开(公告)号：WO2012071469A3
公开(公告)日：2012-05-31
申请号：PCT/US2011/061954
申请日：2011-11-22
申请人： NEVADA CANCER INSTITUTE , SHENZHEN GRADUATE SCHOOL OF PEKING UNIVERSITY , ZHANG, Hui , YE, Tao , QUAN, Junmin , WANG, Jing
发明人： ZHANG, Hui , YE, Tao , QUAN, Junmin , WANG, Jing
IPC分类号： C12Q1/68
摘要： A compound of formula I: or a pharmaceutically acceptable salt, Ri is an optionally substituted heterocyclic group; R and R' are independently H, CH 3 , NO 2 , SO 2 N(CH 3 ) 2 , SO 2 N((CH 3 )SO 2 ), COOH, COOCH 3 , CO(N(CH 3 )), alkyl, alkenyl, alkynyl, aryl, aralkyl, cycloalkyl, heteroaryl, heterocycloalkyl, alkoxy, alkylcarbonyloxy, arylcarbonyloxy, alkoxycarbonyloxy, aryloxycarbonyloxy, carboxylate, alkylcarbonyl, alkylaminocarbonyl, aralkylaminocarbonyl, alkenylaminocarbonyl, alkylcarbonyl, arylcarbonyl, aralkylcarbonyl, alkenylcarbonyl, alkoxycarbonyl, aminocarbonyl, alkylthiocarbonyl, trifluoromethyl, pentafluoroethyl, halogen, cyano, thio, amido, ether, ester, hydroxyl, hydroxyalkyl, saturated or unsaturated fatty acids, azido, phosphonamido, sulfonamido, lactam, phosphate, phosphonato, phosphinato, amino, acylamino, amidino, imino, guanidino, sulfhydryl, alkylthio, arylthio, thiocarboxylate, sulfates, alkylsulfinyl, sulfonato, sulfamoyl, sulfonamido, nitro, cyano, or azido; m and n are independently integers from 1 to 4; T, U, V, and Z are independently CH, N, or CR; L is NH, CH 2 , O, S, or SO 2 ; X is N or CH; Y and Y' are independently O or S; and R 3 is an optionally substituted aryl, heteroaryl, cycloalkyl, or heterocycloalkyl group.

70. 发明申请

WO2012021375A2 THE RECOVERY OF ALUMINA TRIHYDRATE DURING THE BAYER PROCESS USING CROSS-LINKED POLYSACCHARIDES 审中-公开
标题翻译：用交联多糖回收硼酸盐过程中的三水氧化铝
公开(公告)号：WO2012021375A2
公开(公告)日：2012-02-16
申请号：PCT/US2011/046579
申请日：2011-08-04
申请人： NALCO COMPANY , WANG, Jing , BODE, Heinrich E. , LI, Xiaojin Harry
发明人： WANG, Jing , BODE, Heinrich E. , LI, Xiaojin Harry
IPC分类号： C01F7/06 , C01F7/47 , B01D21/01
CPC分类号： C01F7/145 , C01F7/0653 , C01F7/148 , C01F7/47
摘要： The invention provides methods and compositions for improving the production of alumina hydrate. The invention involves adding one or more polysaccharides to liquor or slurry in the fluid circuit of the production process. The one or more polysaccharides can be a cross-linked polysaccharide (such as cross-linked dextran or cross-linked dihydroxypropyl cellulose). The various polysaccharides can impart a number of advantages including at least some of: greater flocculation effectiveness, increasing the maximum effective dosage, faster settling rate. The production process can be a Bayer process.
摘要翻译：本发明提供了用于改善水合氧化铝生产的方法和组合物。本发明涉及在生产过程的流体回路中添加一种或多种多糖到液体或浆液中。一种或多种多糖可以是交联多糖（例如交联葡聚糖或交联二羟丙基纤维素）。各种多糖可赋予许多优点，包括至少一些：更高的絮凝效力，增加最大有效剂量，更快的沉降速率。生产过程可以是拜耳过程。

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