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61. 发明授权

US06368773B1 Photoresist cross-linker and photoresist composition comprising the same 失效
标题翻译：光阻抗交联剂和包含其的光致抗蚀剂组合物
公开(公告)号：US06368773B1
公开(公告)日：2002-04-09
申请号：US09448916
申请日：1999-11-24
申请人： Jae Chang Jung , Keun Kyu Kong , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik , Jin Soo Kim
发明人： Jae Chang Jung , Keun Kyu Kong , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik , Jin Soo Kim
IPC分类号： G03F7027
CPC分类号： C08F216/38 , C07C43/303 , C08F220/06 , G03F7/0382
摘要： The present invention relates to a cross-linker for photoresist compositions which is suitable for a photolithography process using KrF (248 mn), ArF (193 mn), E-beam, ion beam or EUV light sources. Preferred cross-linkers, according to the present invention, comprise a copolymer of (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride. wherein, R1 and R2 individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; and R3 represents hydrogen or methyl.
摘要翻译：本发明涉及适用于使用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺的光致抗蚀剂组合物的交联剂。根据本发明，优选的交联剂包含（i）由以下化学式1表示的化合物和/或（ii）一种或多种选自丙烯酸，甲基丙烯酸其中R1和R2分别表示直链或支链C1-10烷基，直链或支链C1-10酯，直链或支链C1-10酮，直链或支链C1-10羧酸，直链或支链C1-10 包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酯，包括至少一个羟基的直链或支链C 1-10酮直链或支链C 1-10 包含至少一个羟基的羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; 并且R 3表示氢或甲基。

62. 发明授权

US6143463A Method and photoresist using a photoresist copolymer 失效
标题翻译：使用光刻胶共聚物的方法和光刻胶
公开(公告)号：US6143463A
公开(公告)日：2000-11-07
申请号：US992033
申请日：1997-12-17
申请人： Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： C08F2/48 , C08F32/00 , C08F232/00 , C08F232/08 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/039 , C08F232/08 , G03F7/0045 , Y10S430/106
摘要： There is disclosed a photoresist copolymer for DUV light, with which the fine patterns allowable for the high integration of semiconductor devices can be easily obtained in a microlithography process using DUV light. The copolymer is easily prepared by reacting at least two alicyclic olefins at a high temperature and at high pressure in the presence of an initiator.
摘要翻译：公开了一种用于DUV光的光致抗蚀剂共聚物，其中可以在使用DUV光的微光刻工艺中容易地获得半导体器件的高集成度允许的精细图案。通过在高温和高压下在引发剂的存在下使至少两种脂环族烯烃反应来容易地制备共聚物。

63. 发明授权

US06808859B1 ArF photoresist copolymers 有权
标题翻译： ArF光刻胶共聚物
公开(公告)号：US06808859B1
公开(公告)日：2004-10-26
申请号：US09605206
申请日：2000-06-27
申请人： Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/039 , C08F232/04
摘要： A photoresist copolymer is prepared from one or more carboxy-substituted bicycloalkene monomers, and this copolymer is used to prepare a photoresist for submicrolithography processes employing deep ultraviolet (ArF) as a light source. In addition to having high etch resistance and thermal resistance, the photoresist has good adhesiveness to the substrate and can be developed in a TMAH solution.
摘要翻译：由一种或多种羧基取代的双环烯烃单体制备光致抗蚀剂共聚物，该共聚物用于制备使用深紫外（ArF）作为光源的亚微光刻工艺的光致抗蚀剂。除了具有高耐蚀刻性和耐热性之外，光致抗蚀剂对基材具有良好的粘附性，并且可以在TMAH溶液中显影。

64. 发明授权

US06399792B2 Photoresist cross-linker and photoresist composition comprising the same 失效
标题翻译：光阻抗交联剂和包含其的光致抗蚀剂组合物
公开(公告)号：US06399792B2
公开(公告)日：2002-06-04
申请号：US09954680
申请日：2001-09-11
申请人： Keun Kyu Kong , Jae Chang Jung , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik
发明人： Keun Kyu Kong , Jae Chang Jung , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik
IPC分类号： C07D32500
CPC分类号： G03F7/0045 , G03F7/038
摘要： The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. wherein X1, X2, R, R′, R″, R1, R2, p, q and s are those defined herein. Such cross-linkers are suitable for use in photolithography processes employing KrF(248 nm), ArF(193 nm), E-beam, ion-beam or EUV light sources.
摘要翻译：本发明涉及选自由以下化学式1表示的交联剂单体和其均聚物和共聚物的光致抗蚀剂交联剂，其中X1，X2，R，R'，R“，R1， R2，p，q和s是本文定义的那些。这种交联剂适用于采用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺。

65. 发明授权

US5830624A Method for forming resist patterns comprising two photoresist layers and an intermediate layer 失效
标题翻译：用于形成包括两个光致抗蚀剂层和中间层的抗蚀剂图案的方法
公开(公告)号：US5830624A
公开(公告)日：1998-11-03
申请号：US501947
申请日：1995-07-13
申请人： Sang Man Bae , Ki Ho Baik
发明人： Sang Man Bae , Ki Ho Baik
IPC分类号： G03F7/11 , G03F7/004 , G03F7/09 , G03F7/095 , G03F7/20 , G03F7/26 , G03F7/40 , H01L21/027 , G03C5/00 , G03C1/825
CPC分类号： H01L21/0271 , G03F7/091 , G03F7/095
摘要： A method for forming a resist pattern by coating a primary photoresist pattern having a small thickness and then coating a secondary photoresist pattern over the primary photoresist pattern. Alternatively, the resist pattern is formed by coating a primary photoresist film, exposing the primary photoresist film to light to define a light-exposed region in the primary photoresist film, coating a secondary photoresist film over the primary photoresist film, exposing the secondary photoresist film to light to define a light-exposed region in the secondary photoresist film, and developing the resulting structure to form primary and secondary resist patterns. The method achieves an improvement in the contrast of light, thereby obtaining a resist pattern having a vertical profile.
摘要翻译：一种通过涂覆具有小厚度的主要光致抗蚀剂图案然后在主光致抗蚀剂图案上涂覆次光致抗蚀剂图案来形成抗蚀剂图案的方法。或者，通过涂覆主光致抗蚀剂膜，将初始光致抗蚀剂膜暴露于光以限定主光致抗蚀剂膜中的曝光区域，在主光致抗蚀剂膜上涂覆次光致抗蚀剂膜，暴露次光致抗蚀剂膜以限定二次光致抗蚀剂膜中的曝光区域，并显影所得到的结构以形成初级和次级抗蚀剂图案。该方法实现了光的对比度的改善，从而获得具有垂直轮廓的抗蚀剂图案。

66. 发明授权

US5759748A Method for forming photoresist pattern 失效
标题翻译：光刻胶图案形成方法
公开(公告)号：US5759748A
公开(公告)日：1998-06-02
申请号：US816479
申请日：1997-03-13
申请人： Jun Sung Chun , Yong Suk Lee , Ki Ho Baik
发明人： Jun Sung Chun , Yong Suk Lee , Ki Ho Baik
IPC分类号： G03F7/004 , G03F7/00 , G03F7/038 , G03F7/039 , G03F7/075 , G03F7/095 , G03F7/26 , G03F7/32 , G03F7/36 , G03F7/40 , H01L21/027
CPC分类号： G03F7/405 , G03F7/0755 , G03F7/095 , G03F7/32
摘要： A method for forming photoresist patterns, comprising the steps of: coating a chemically enhanced photoresist film on a lower layer; forming a silicon monomer layer on the chemically enhanced photoresist film; exposing the monomer layer through a mask, to selectively polymerize the silicon monomer; removing the unexposed regions of the monomer layer by development; and subjecting the remaining polymerized regions to oxygen plasma developing process to form oxide films through reaction of oxygen with the silicon contained in the polymerized regions and to form photoresist patterns through selective etching of the photoresist film, with the oxide films serving as a mask. Exposure of the silicon monomer generates protons from the chemically enhanced photoresist film which trigger the polymerization of the silicon monomer. The polymer thus formed is not removed by typical developing solutions and serves as a mask when etching the photoresist film with oxygen plasma because a thin silicon oxide (SiO.sub.2) is formed on the silicon contained polymer.
摘要翻译：一种形成光致抗蚀剂图案的方法，包括以下步骤：在下层上涂覆化学增强的光致抗蚀剂膜; 在化学增强的光致抗蚀剂膜上形成硅单体层; 使单体层通过掩模曝光，以选择性聚合硅单体; 通过显影去除单体层的未曝光区域; 并且使剩余的聚合区域进行氧等离子体显影处理，以通过氧与聚合区域中所含的硅的反应形成氧化物膜，并且通过选择性蚀刻光致抗蚀剂膜形成光刻胶图案，其中氧化物膜用作掩模。硅单体的曝光从化学增强的光致抗蚀剂膜产生质子，其触发硅单体的聚合。这样形成的聚合物不会被典型的显影液除去，并且在用氧等离子体蚀刻光致抗蚀剂膜时用作掩模，因为在含硅聚合物上形成薄的氧化硅（SiO 2）。

67. 发明授权

US06316151B1 Stencil mask 失效
标题翻译：模板面膜
公开(公告)号：US06316151B1
公开(公告)日：2001-11-13
申请号：US09442983
申请日：1999-11-18
申请人： Cheol Kyun Kim , Ki Ho Baik
发明人： Cheol Kyun Kim , Ki Ho Baik
IPC分类号： G03F900
CPC分类号： G03F1/20 , G03F1/22 , G21K1/10
摘要： A stencil mask used as an exposure mask in a non-optical lithography process using an electron beam, X-ray or ion beam as a light source, comprising: a membrane; and a layer formed over the membrane, for scattering or absorbing electrons, wherein the layer for scattering or absorbing has a multi-layered structure in which two or more layers comprised of different materials are stacked.
摘要翻译：在使用电子束，X射线或离子束作为光源的非光学光刻工艺中用作曝光掩模的模版掩模，包括：膜; 以及形成在膜上方的用于散射或吸收电子的层，其中用于散射或吸收的层具有多层结构，其中由不同材料构成的两层或更多层被堆叠。

68. 发明授权

US5821034A Method for forming micro patterns of semiconductor devices 失效
标题翻译：用于形成半导体器件的微图案的方法
公开(公告)号：US5821034A
公开(公告)日：1998-10-13
申请号：US720020
申请日：1996-09-27
申请人： Hyeong Soo Kim , Chang Mun Lim , Ki Ho Baik
发明人： Hyeong Soo Kim , Chang Mun Lim , Ki Ho Baik
IPC分类号： H01L21/30 , G03F7/20
CPC分类号： G03F7/70091 , G03F7/70125 , G03F7/70466
摘要： A method for forming micro patterns of a semiconductor device which uses a dipole illumination aperture adapted to transmit the spatial frequency components of light only in the X-axis direction and a dipole illumination aperture adapted to transmit the spatial frequency components of light only in the Y-axis direction, thereby obtaining the same effect as in the case using two sheets of masks to provide an increase in process margin.
摘要翻译：一种用于形成半导体器件的微图案的方法，该半导体器件使用适于透射仅在X轴方向上的光的空间频率分量的偶极子照明孔径，以及偶极子照明孔径，仅适用于将光的空间频率分量仅在Y 从而获得与使用两片掩模的情况相同的效果，以提高加工余量。

69. 发明授权

US6156668A Method for forming a fine pattern in a semiconductor device 有权
标题翻译：在半导体器件中形成精细图案的方法
公开(公告)号：US6156668A
公开(公告)日：2000-12-05
申请号：US294874
申请日：1999-04-20
申请人： Hyung Gi Kim , Myung Soo Kim , Cheol Kyu Bok , Ki Ho Baik , Dae Hoon Lee , Jin Woong Kim , Byung Jun Park
发明人： Hyung Gi Kim , Myung Soo Kim , Cheol Kyu Bok , Ki Ho Baik , Dae Hoon Lee , Jin Woong Kim , Byung Jun Park
IPC分类号： H01L21/302 , G03F7/38 , H01L21/00
CPC分类号： G03F7/38
摘要： A method for forming a fine pattern in a semiconductor device removes roughness from a pattern produced in a fine pattern fabrication process using a silylation process as being one kind of a TSI process, eliminates smoothly a photosensitive film residue caused by a residue silylation layer remained on a-non-pattern area, and increases a margin of a lithography process. To achieve the foregoing, the method performs an etching process with a fluorine/oxygen mixture gas so as to remove a thin oxide film being formed on the non-pattern area after a silylation process, enables an edge portion of a silylation region to be planarized so as to prevent the pattern from becoming rough, and forms a photosensitive film pattern by developing the photosensitive film with oxygen plasma. Thereafter, the photosensitive film residue is etched again with a mixture gas of fluorine/oxygen, thereby increasing a fabrication margin of the fine pattern.
摘要翻译：在半导体器件中形成精细图案的方法从使用硅烷化工艺的精细图案制造工艺中产生的图案中除去粗糙度作为一种TSI工艺，平滑地消除由剩余的甲硅烷基层残留的感光性膜残留物非图案区域，并增加了光刻工艺的余量。为了实现上述目的，该方法用氟/氧混合气体进行蚀刻处理，以便在甲硅烷化过程之后除去在非图案区域上形成的薄氧化膜，使甲硅烷基化区域的边缘部分平坦化以防止图案变粗糙，并且通过用氧等离子体显影感光膜形成感光膜图案。此后，用氟/氧的混合气体再次蚀刻感光性膜残渣，从而增加精细图案的制造余量。

70. 发明授权

US5989788A Method for forming resist patterns having two photoresist layers and an intermediate layer 失效
标题翻译：用于形成具有两个光致抗蚀剂层和中间层的抗蚀剂图案的方法
公开(公告)号：US5989788A
公开(公告)日：1999-11-23
申请号：US966821
申请日：1997-11-10
申请人： Sang Man Bae , Ki Ho Baik
发明人： Sang Man Bae , Ki Ho Baik
IPC分类号： G03F7/11 , G03F7/004 , G03F7/09 , G03F7/095 , G03F7/20 , G03F7/26 , G03F7/40 , H01L21/027 , G03C5/00
CPC分类号： H01L21/0271 , G03F7/091 , G03F7/095
摘要： A method for forming resist patterns having two photoresist layers and an intermediate layer involves coating a primary photoresist film having a small thickness over an under layer, and exposing the primary photoresist film to light using a mask. Then, the primary photoresist film is developed, thereby forming a primary photoresist film pattern. An intermediate layer is formed over the entire exposed surface of a resulting structure, the intermediate layer being made of a spin on glass or plasma enhancement oxide. A secondary photoresist film is coated over the intermediate layer. The secondary photoresist film is exposed to light using the same mask as used for the primary photoresist film, and is developed to form a secondary photoresist pattern. A portion of the intermediate layer exposed through the secondary photoresist pattern is etched, forming a secondary photoresist pattern completely overlapping with the primary photoresist pattern so that the resulting resist pattern has a vertical profile.
摘要翻译：用于形成具有两个光致抗蚀剂层和中间层的抗蚀剂图案的方法包括在下层上涂覆具有小厚度的初级光致抗蚀剂膜，并且使用掩模将主光致抗蚀剂膜曝光。然后，将主光致抗蚀剂膜显影，从而形成初始光致抗蚀剂膜图案。在所得结构的整个暴露表面上形成中间层，中间层由玻璃上的自旋或等离子体增强氧化物制成。二次光刻胶膜涂覆在中间层上。使用与用于初级光致抗蚀剂膜相同的掩模将次级光致抗蚀剂膜曝光，并且显影以形成二次光致抗蚀剂图案。蚀刻通过二次光致抗蚀剂图案曝光的中间层的一部分，形成与主要光致抗蚀剂图案完全重叠的二次光致抗蚀剂图案，使得所得抗蚀剂图案具有垂直轮廓。

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