专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明专利

JPH0442895A PRODUCTION OF THIN FILM SUPERCONDUCTOR 失效
公开(公告)号：JPH0442895A
公开(公告)日：1992-02-13
申请号：JP14823290
申请日：1990-06-05
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KAMATA TAKESHI , HAYASHI SHIGENORI , KITAGAWA MASATOSHI , HIRAO TAKASHI
IPC分类号： C30B29/22 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To obtain a multiple compound thin film superconductor with excellent superconducting characteristics through such a process that, when a multiple compound film is to be irradiated with oxygen ion or oxygen plasma, the direct current voltage to apply to said ion or plasma is either intermittently or continu ously varied with time. CONSTITUTION:When a multiple compound film 12 (11: substrate; 13: surface) is to be irradiated with oxygen ion or oxygen plasma (31: ionic source), the direct current voltage (electric source 37) to apply on said ion or plasma is either intermittently or continuously varied with time. Heating with a heater 36 of the film 12 under the irradiation with the oxygen ion or plasma will improve the superconducting characteristics. The heating temperature is pref. room temperature to

62. 发明专利

JPH0430523A FORMING APPARATUS OF THIN FILM 失效
公开(公告)号：JPH0430523A
公开(公告)日：1992-02-03
申请号：JP13779590
申请日：1990-05-28
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SHIBUYA MUNEHIRO , HIRAO TAKASHI , KITAGAWA MASATOSHI , YOSHIDA TETSUHISA , HAYASHI SHIGENORI , KAMATA TAKESHI
IPC分类号： H01L21/205 , H01L21/31
摘要： PURPOSE:To introduce a vaporized material into a vacuum chamber, as it is, without making it reliquefied and resolidified and thereby to enable formation of a thin film being excellent in characteristics by a construction wherein a lower electrode is heated by a heater, a gas introduction passage is made to have a double structure and a cooling device is provided in the outer peripheral part of the passage, while a material gas is heated by the heater. CONSTITUTION:A substrate 14 and an electrode 13 are heated by a heater 15. A solid or a liquid of a material in an ampule 9 is heated by a heater 8, and a material gas bubbled by a gas supplied from a cylinder 18 and subjected to a flow rate control is introduced between electrodes while it is heated and kept hot by a heater 22 incorporated inside an introduction passage 20 and an electrode 21. Accordingly, the introduced gas reaches the electrode 13 without being cooled down by the adiabatic expansion occurring when it is introduced into a vacuum chamber. Besides, the outer peripheral part of the introduction passage is cooled down by a cooler 25 in order to prevent heating by the heater 22. The vaporized material can reach the inside of the vacuum chamber without being cooled. Therefore the material contributes to the formation of a film effectively and a powder-form decomposition product is hardly brought forth.

63. 发明专利

JPH0430479A FORMING DEVICE AND METHOD OF CDTE THIN FILM 失效
公开(公告)号：JPH0430479A
公开(公告)日：1992-02-03
申请号：JP13594590
申请日：1990-05-25
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NISHITANI MIKIHIKO , HIRAKAWA KAZUE , IKEDA KOSUKE , HIRAO TAKASHI
IPC分类号： H01L31/04 , H01L27/146
摘要： PURPOSE:To enable a P-type CdTe thin film of low resistance to be formed by a method wherein a Te evaporation source is provided, and the doping of the CdTe thin film with Cu impurities is improved in efficiency through the presence of Te vapor. CONSTITUTION:A Te evaporation source K3 is provided, and a substrate, a CdTe evaporation source, and a Cu evaporation source are kept constant at temperatures of 400 deg.C, 500 deg.C, and 1100 deg.C respectively, and the Te evaporation source K3 is made to change in temperature from a room temperature to 700 deg.C to deposit a CdTe thinfilm on a glass substrate. An excellent P-type CdTe thin film whose electrical conductivity and mobility are 10 (OMEGA cm) or so and 10 cm /V.sec or so respectively can be obtained when the Te evaporation source K3 is kept at a temperature of 600-700 deg.C. That is, the doping of a CdTe thin film with Cu impurities can be improved in efficiency through the presence of Te vapor. The same effect can be expected when the substrate is kept at a temperature of 400 deg.C or above, a CdTe evaporation source is kept at a temperature higher than that of the substrate by 100 deg.C or so, a Te evaporation source is kept at a temperature of 600-700 deg.C, and a Cu evaporation source is kept at a temperature of 1000-1100 deg.C.

64. 发明专利

JPH03284846A MANUFACTURE OF TANTALUM OXIDE THIN FILM 失效
公开(公告)号：JPH03284846A
公开(公告)日：1991-12-16
申请号：JP8653190
申请日：1990-03-30
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SHIBUYA MUNEHIRO , KITAGAWA MASATOSHI , KAMATA TAKESHI , HAYASHI SHIGENORI , HIRAO TAKASHI
IPC分类号： H01L27/04 , H01L21/316 , H01L21/822
摘要： PURPOSE:To obtain a tantalum oxide thin film which has a uniform film quality and is not contaminated by impurities relatively easily by a method wherein TaF5 and N2O, O2 or mixed gas of them is used as raw material. CONSTITUTION:For instance, a vacuum chamber 11 is evacuated to vacuum by an evacuating pump 12. O2 or N2O whose flow rate is controlled by a flow rate controller 10 is introduced through a lower electrode 13 which also serves as a gas introducing inlet. TaF5 in an ampoule 14 is vaporized by a heater 15 or heated to a temperature close to the vaporizing temperature and bubbled by He or N2 in a bomb 21 and introduced into the vacuum chamber. The flow rate of He or N2 is controlled by a flow rate controller 16. A substrate 18 on a substrate holder 17 is heated by a substrate heater 19. A voltage is applied to the gas introduced into the vacuum chamber by a plasma generating power supply 20 and a plasma is generated between the substrate holder 17 and the lower electrode 13 to decompose the introduced gas and a Ta2O5 film is deposited on the substrate 18.

65. 发明专利

JPH03263880A SOLAR CELL AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03263880A
公开(公告)日：1991-11-25
申请号：JP6315590
申请日：1990-03-14
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NISHITANI MIKIHIKO , HIRAKAWA KAZUE , TERAUCHI MASAHARU , HIRAO TAKASHI
IPC分类号： H01L31/04
摘要： PURPOSE:To enable solar energy to be converted more efficiently and obtain a solar cell at a lower cost by allowing a mutually contacting semiconductor layer between a solar cell for a low-energy light and that for a high-energy light to be of a same conductive type and by forming an intermediate electrode at one of those semiconductor layers. CONSTITUTION:A pn junction is formed by depositing an n-type part 3 and a p-type part 4 of a CuInSe2 thin film in order from the lower, part on a lower- part electrode 2 where Mo is formed on a glass substrate 1 for producing a cell Sl for a low-energy light and then a p-type CdTe thin film 6 and an n-type ZnCdS thin film 7 are deposited in sequence for forming a hetero junction and for producing a cell S2 for a high-energy light. Au and ITO are formed as an intermediate electrode 5 and the transparent upper electrode 2.

66. 发明专利

JPH03258560A THIN MEMBRANE TYPE THERMAL HEAD AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03258560A
公开(公告)日：1991-11-18
申请号：JP5826890
申请日：1990-03-09
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KORECHIKA AKIHIRO , SAKAGUCHI SEIICHIRO , KURAMASU KEIZABURO , HIRAO TAKASHI , KITAGAWA MASATOSHI
IPC分类号： B41J2/335
摘要： PURPOSE:To realize the manufacture of a thermal head suitable for thermal transfer recording and highly reliable by providing on the rows of heating elements a wear resisting protective membrane consisting mainly of Si, N and B, i.e. the compounds meeting the preset requirements of the atomic percentages. CONSTITUTION:A number of the rows of heating element are provided on an insulating base plate and a wear resisting protective membrane is provided on the rows of the heating elements. The wear resisting protective membrane consists mainly of Si, N and B and such compounds meet the requirements of 0.6 10 (in terms of atomic percentage). Such constitution provides a sufficient conductivity to avoid electrostatic destruction and also sufficient heat resistance, adhesiveness and membrane hardness and, by the use of this membrane for the protection of a thermal head from wear, the manufacture of the thermal head suitable for thermal transfer recording and highly reliable can be realized.

67. 发明专利

JPH03199058A THERMAL HEAD AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03199058A
公开(公告)日：1991-08-30
申请号：JP34263289
申请日：1989-12-28
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SAKAGUCHI SEIICHIRO , KURAMASU KEIZABURO , KORECHIKA AKIHIRO , HIRAO TAKASHI , KITAGAWA MASATOSHI
IPC分类号： B41J2/335
摘要： PURPOSE:To obtain a thermal head having a wear-resistant protective film causing no dielectric breakdown by using SiBxNy film as a wear-resistant protective film material. CONSTITUTION:Exothermic resistor 2 group arranged in a line and a pair of facing electrode 3 group are formed in the main scanning direction on an insulating substrate 1. After that, when a wear-resistant protective film 4 is formed, SiH4 and N2 are used as raw material gas, B2H6 gas is used as supply source for B, and SiBxNy film is accumulated by plasma CVD method. In this manner, it is possible to prevent a dielectric breakdown due to static electricity generated between thermal transfer sheet and thermal head and to make the performance of the thermal head higher.

68. 发明专利

JPH03197321A PRODUCTION OF SUPERCONDUCTOR OF THIN FILM 失效
公开(公告)号：JPH03197321A
公开(公告)日：1991-08-28
申请号：JP33901489
申请日：1989-12-26
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KAMATA TAKESHI , KITAGAWA MASATOSHI , HAYASHI SHIGENORI , HIRAO TAKASHI
IPC分类号： C01G3/00 , C01G1/00 , C23C14/08 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To promote oxidation of copper of constituent element and to obtain a superconductor of thin film at low temperature without damage by irradiating a substrate in a vacuum tank with an evaporating stream and a plasma flow or an ionic flow of mixed gas of oxygen-based gas and copper compound gas. CONSTITUTION:A vacuum tank 1 has an ion source 2 to generate plasma or ion of oxygen gas and copper compound gas and one or more evaporating sources 3. A substrate 4 set in the vacuum tank 1 is irradiated with plasma flow or ion flow of mixed gas of oxygen-based gas and copper compound gas from the ion source 2 while depositing a metal from the evaporating sources 3 to form a film. Since this production process of superconductor of thin film promotes oxidation of copper by reducing the temp. of the formation process and by using the plasma or ion of mixed gas of oxygen-based gas and copper compound gas in combination with the deposition and plasma/ion irradiation for forming a film without damage, a superconducting thin film having excellent characteristics can be made.

69. 发明专利

JPH03189169A THIN FILM TYPE THERMAL HEAD AND ITS MANUFACTURE 失效
公开(公告)号：JPH03189169A
公开(公告)日：1991-08-19
申请号：JP33073189
申请日：1989-12-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SEKINO HARUHIKO , SAKAGUCHI SEIICHIRO , KORECHIKA AKIHIRO , KITAGAWA MASATOSHI , HIRAO TAKASHI , YAMADA YUICHIRO
IPC分类号： B41J2/335
摘要： PURPOSE:To obtain a thin film type thermal head which does not generate dielectric breakdown by a method wherein an abrasion resistant protective film having, as principal components, silicon, titanium, and nitrogen resistivity of which is less compared with that of SiON as a material for an abrasion resistant protective film is formed. CONSTITUTION:A heating element 2 and a pair of counter electrodes 3 are successively laminated on an insulating substrate 1 wherein a glass glazed layer is provided on alumina. Thereafter, a pattern is formed thereon. A SiTiN film is formed as an abrasion resistant protective film 4 thereto. The SiTiN film is formed by using, for example, SiH4, TiCl4, N2 as raw material gas and by using a plasma CVD method. Thus, electric conductivity is given to the film by existence of a product showing metallic and semiconductor like electric conduction and therefore, since generated electrostatic charge is liberated, electrostatic breakdown is prevented from occurring.

70. 发明专利

JPH0324266A WEAR RESISTANT THIN FILM AND PRODUCTION THEREOF 失效
公开(公告)号：JPH0324266A
公开(公告)日：1991-02-01
申请号：JP15653889
申请日：1989-06-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KITAGAWA MASATOSHI , YOSHIDA TETSUHISA , HIRAO TAKASHI
IPC分类号： C23C14/58 , C23C14/06 , C23C16/30 , C23C16/511 , H01L21/316
摘要： PURPOSE:To stably produce the wear resistant thin film having high performance by forming a thin film of silicon oxynitride having uniform quality and accelerating and implanting ions contg. a carbon element to this thin film, thereby forming a structure contg. carbon near the surface. CONSTITUTION:The inside of an insulated vacuum chamber 10 is evacuated to a vacuum and a high frequency is introduced from a high-frequency oscillator 13 via an electrode 12 into a plasma generating chamber. A magnetic field is impressed by an electromagnet 15. Gaseous raw materials (a gaseous mixture composed of CO, N2 and O2) is introduced from a gas introducing port 16 and the inside of the vacuum chamber 10 is kept at about 1.0Torr. The intensity of the magnetic field is so set as to satisfy the conditions to stabilize the electric discharge, by which plasma 17 of a high degree ef dissociation is generated under a low pressure. This plasma 17 is regulated to + several KV by a potential regulating meshed electrode 18 and is led out via an ion leading out window 19. The ions contg. the carbon are accelerated and implanted to the surface (about 100 to 500 deg.C) of the thin film of the silicon oxynitride which has the uniform quality and is formed on a holder 20, by which the surface of the thin film is. made into the carbon-contg. structure. The thin film having the wear resistance and adhesive property in combination is formed in this way.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式